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2SK2463T100 ROHM Semiconductor Power Field-Effect Transistor, 2A I(D), 60V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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2SK2463 datasheet (3)

Part Manufacturer Description Type PDF
2SK2463 ROHM Small switching (60V, 2A) Original PDF
2SK2463 ROHM Power MOSFETs Scan PDF
2SK2463T100 ROHM TRANS MOSFET N-CH 60V 2A 3SC-62 T/R Original PDF

2SK2463 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SK2463

Abstract:
Text: Transistors Small switching (60V, 2A) 2SK2463 •Features 1 ) Low on-resistance. 2 , ordering unit (pieces) 3000 2SK2463 O •External dimensions (Units: mm) ROHM : MPT3 EIA J : SC-62 1.5±0.1 -f 4, Abbreviated symbol: KC (1) Gate (2) Drain (3) Source naHm 119 Transistors 2SK2463 , (V) Fig.3 Typical Transfer Characteristics 120 noHm Transistors 2SK2463 •Electrical , . Drain-Source Voltage norim 121 Transistors 2SK2463 ^Electrical characteristic curves 0.010.02 0.05 0.1 0


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PDF 2SK2463 2SK2463 S-AU T100
1998 - 2SK2463

Abstract:
Text: Transistors Small switching (60V, 2A) 2SK2463 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = , 2SK2463 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 119 Transistors FElectrical characteristic curves 120 2SK2463 Transistors 2SK2463 FSwitching


Original
PDF 2SK2463 2SK2463 mosfet
Not Available

Abstract:
Text: Transistors 2SK2463 · F e a tu re s 1 ) Low on-resistance. 2) Small switching (60V, 2A , specifications Package Type Code Basic ordering unit (pieces) 2SK2463 Bulk T100 3000 O ram 119 , 2SK2463 Symbol Igss V(BR)DSS toss VGS(th) RüSfon) ! Yts I* Ciss Coss Crss td(on) tr td(off) tf trr , 5-6 4.8 4 3.2 2.4 Vos= 10V b -1mA 2SK2463 1.6 0.6 *50 O l_ -25 0 25 50 , Voltage lU M fn 121 Transistors · E le c tr ic a l characteristic curves 2SK2463 to


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PDF 2SK2463 SC-62
1998 - Not Available

Abstract:
Text: Transistors Small switching (60V, 2A) 2SK2463 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm , characteristics (Ta = 25_C) 2SK2463 FElectrical characteristic curves 119 Transistors FElectrical characteristic curves 2SK2463 120 Transistors 2SK2463 FSwitching characteristics Fmeasurement


Original
PDF 2SK2463
2SK2463

Abstract:
Text: Transistors Small switching (60V, 2A) 2SK2463 ·F e a tu re s 1) 2) 3) 4) 5) 6) L o w o n -re , ) 2SK2463 Bulk T100 3000 O 7020=^ n o vim DDlb7fl4 TS7 119 M O S FET Transistors ·E le , Turn-off delay time Fall time Reverse recovery time * Pw^SOO n s, Duty c y d e â l % 2SK2463 Symbol , Transistors Electrical c h a ra c te ris tic cu rve s 6.4 5.6 4.8 4 3.2 2.4 Vos- 10V lo=1m A 2SK2463 , 2SK2463 H > ffi 20 % 0.2 0.5 1 2 5 (A) REVERSE DRAIN CURRENT : Im Fig. 13


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PDF 2SK2463 O-220, 0Dlb713 O-220FN O220FP T0-220FP, O-220FP. 7020c 2SK2463
2SK230

Abstract:
Text: D 8 5 (V) 30 Id ( A ) \ ^ 2SK2094 (CPT F5) 2 2SK2103 (MPT) 2SK2463 (MPT) 3 5 10 2SK2430 (CPT F5 , (V) 10 10 10 10 10 10 10 10 10 lD (A) 1 1 1.5 1 1.5 2.5 5 1 2.5 L 101 2SK2103 2SK2463


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PDF 2SK2094 2SK2042 2SK230 2SK2463
2SK2430

Abstract:
Text: 450 2 2SK2103 (MPT) 2SK2094 (CPT F5) 2SK2463 (MPT) 2SK2105 (CPT F5) 3 2SK2430 (CPT F5) 2SK2306 (CPT , (Tc=25*C) Vos (V) id (A) 2SK2103 - - 30 2 2* 0.25 10 1 2SK2463 - - 60 2 2* 0.30 10 1


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PDF 2SK2094 2SK2042 2SK2306 2SK2104 2SK2041 2SK2105 2SK2042 SC-64) OT-89) EHS54 2SK2430 2SK2094 2SK2103 2SK2463
Not Available

Abstract:
Text: 2SK2463 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)60.0 V(BR)GSS (V) I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC


Original
PDF 2SK2463
2SK2041

Abstract:
Text: 100 450 2SK2094 (CPT F5) 2 3 5 10 2SK2103 (MPT) 2SK2463 (MPT) 2SK2430 (CPT F5) 2SK2306 (CPT F5 , 2SK2103 2SK2463 Package CPT F5 2SK2430 2SK2094 2SK2306 2SK2104 2SK2105 PSD V dss Id(A) 2 2 3 2 3 5 10


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PDF 2SK2094 2SK2042 OT-89) 2SK2041 2SK2042 2SK2105 2SK243 2SK2430 2SK2463 F5 SOT-89
2sd2142

Abstract:
Text: ) Part No. Application SST3 RK7002 Switching SMT3 2SK2731 MPT3 2SK2103 2SK2463 CPT3 2SK2094 2SK2503


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PDF 2SK2503 RK7002 2SB1590K 2SD2444K 2SA1036K 2SC2411K 2SB1197K 2SD1781K 2SD1484K 2SB1198K 2sd2142
1998 - rkm 21 transistor

Abstract:
Text: - ~~~~~ 1 vcis=4v 5 + 5 +2SK2731 i Swltchlng _ 2SK2463 c RK320(Under development) 1 60 . 2 RK7002 2SK2103


Original
PDF 2SK2792 2SK2503 RK7002 rkm 21 transistor RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor 2SK2460 rkm 45 transistor rkm 15 transistor 2SK2463
2000 - rkm 33 transistor

Abstract:
Text: KC 2SK2463 W10 UMW10N KE 2SK3065 W1 UMW1N E01 DTDG14GP W2 UMW2N


Original
PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A 2SA1885 rkm 35 transistor 2SC5274
rkm 33 transistor

Abstract:
Text: 2SD2167 2SD2170 2SD2153 2SD2195 2SD2211 2SD2212 2SD2391 2SD2537 2SC4672 2SK2103 2SK2463 DTDG14GP DTDG23YP


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PDF FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD rkm 20 transistor 2SA1885 2SC5274 rkm transistor
113 marking code transistor ROHM

Abstract:
Text: KC 2SK2463 W10 UMW10N KE 2SK3065 W1 UMW1N E01 DTDG14GP W2 UMW2N


Original
PDF
2n4401 331

Abstract:
Text: . 111 2SK2460N. 115 2SK2463


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PDF 2N3904 2N3906 2N4401 2N4403 2SA821S. 2SA830S. 2SA854S. 2SB822 2n4401 331 2n4403 331 2n3904 409 2n3904 331 k 2715 1352s 2n3906 331 MPSA06 346 2SA1964 2SD2576
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