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2SK2315TY(TR-E) Renesas Electronics Corporation Chip1Stop 1,150 $6.16 $4.58

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2SK2315 datasheet (9)

Part Manufacturer Description Type PDF
2SK2315 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK2315 Hitachi Semiconductor Mosfet Guide Original PDF
2SK2315 Renesas Technology Silicon N Channel MOS FET Original PDF
2SK2315 Renesas Technology Silicon N Channel MOS FET Original PDF
2SK2315 Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK2315TYTL-E Renesas Technology Silicon N Channel MOS FET Original PDF
2SK2315TYTR Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2A UPAK Original PDF
2SK2315TYTR-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2A 4-UPAK Original PDF
2SK2315TYTR-E Renesas Technology Silicon N Channel MOS FET Original PDF

2SK2315 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract:
Text: 2SK2315 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power , , motor drive, power switch, solenoid drive Outline UPAK 2SK2315 Absolute Maximum Ratings (Ta = , ns vG o S lD= 1 A, Rl = 30 £2 VGS= 1 0 V 2SK2315 M axim um S afe O peration A rea I , S o urce V o ltage 4 V g s (V) 5 3 2SK2315 Drain to S o urce Saturation Voltage vs. G , m ittance vs. Drain C urrent Drain C u rrent (°C ) 2 I I □ (A) 10 2SK2315 T


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PDF 2SK2315
1997 - Hitachi DSA001652

Abstract:
Text: 2SK2315 Silicon N-Channel MOS FET November 1996 Application High speed power switching , drive Outline 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit , ID = 1 A, RL = 30 VGS = 10 V 2SK2315 Power vs. Temperature Derating Maximum Safe Operation , GS (V) 3 2SK2315 Static Drain to Source State Resistance vs. Drain Current Static Drain , 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 10 2SK2315 Typical Capacitance vs


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PDF 2SK2315 Hitachi DSA001652
1999 - 2SK2315

Abstract:
Text: 2SK2315 Silicon N Channel MOS FET Application UPAK High speed power switching Features , ) Marking is "TY" 2SK2315 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min , - * Pulse Test 2SK2315 Power vs. Temperature Derating Maximum Safe Operation Area 5 100 , ) 2SK2315 Static Drain to Source State Resistance vs. Drain Current Pulse Test Ta = 25 °C 0.8 , Current I D (A) 5 10 2SK2315 Typical Capacitance vs. Drain to Source Voltage V DS (V


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PDF 2SK2315 2SK2315
Not Available

Abstract:
Text: 2SK2315 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching , drive Outline UPAK D 1. Gate 2. Drain 3. Source 4. Drain 908 2SK2315 Absolute Maximum , HITACHI 909 2SK2315 Power vs. Temperature Derating 5 Channel Dissipation Pch" (W) (" o n the , ) 1 2 3 Gate to Source Voltage 4 V g s (V) 5 910 H ITACH I 2SK2315 Drain to Source , Case Tem perature Tc (°C) H ITACH I 2SK2315 Typical Capacitance vs. Dynamic Input


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PDF 2SK2315
1999 - Hitachi DSA00279

Abstract:
Text: 2SK2315 Silicon N-Channel MOS FET Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven , 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain , drain to source on state resistance VGS(off) RDS(on) 2 2SK2315 3 2SK2315 4 2SK2315 5 2SK2315 6 2SK2315 7 2SK2315 8 2SK2315 When using this document, keep


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PDF 2SK2315 Hitachi DSA00279
2000 - Hitachi DSA00276

Abstract:
Text: 2SK2315 Silicon N-Channel MOS FET ADE-208-1354 (Z) 1st. Edition Mar. 2001 Application High , 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain , drain to source on state resistance VGS(off) RDS(on) 2 2SK2315 Power vs. Temperature Derating , Drain to Source Voltage 8 10 V DS (V) 0 3 2SK2315 Drain to Source Saturation Voltage vs , 2SK2315 Typical Capacitance vs. Drain to Source Voltage 1000 100 V DS (V) Ciss 100 Coss V DD = 50 V 25 V


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PDF 2SK2315 ADE-208-1354 D-85622 Hitachi DSA00276
2005 - 2SK2315

Abstract:
Text: Package Code Ordering Information Part Name 2SK2315TYTL-E 2SK2315TYTR-E Quantity 1000 pcs 1000 , 2SK2315 Silicon N Channel MOS FET REJ03G1006-0200 (Previous: ADE-208-1354) Rev.2.00 Sep , page 1 of 5 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS VGSS ID ID , 30 , VGS = 10 V 2SK2315 Main Characteristics Maximum Safe Operation Area 5 1.6 ID (A , Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) () 2SK2315 160


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PDF 2SK2315 REJ03G1006-0200 ADE-208-1354) PLZZ0004CA-A 2SK2315 2SK2315TYTL-E 2SK2315TYTR-E
2000 - Not Available

Abstract:
Text: on these materials or the products contained therein. 2SK2315 Silicon N-Channel MOS FET ADE , G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item , ) 2SK2315 Power vs. Temperature Derating 1.6 Channel Dissipation Pch* (W) (* on the almina ceramic board , Source Voltage 4 5 V GS (V) 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 2SK2315 , Drain Current I D (A) 2SK2315 Typical Capacitance vs. Drain to Source Voltage 1000 100 V DS (V


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PDF D-85622
1999 - 2SK2315

Abstract:
Text: 2SK2315 Silicon N-Channel MOS FET Application High speed power switching Features · · · , Outline UPAK 3 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK2315 , . Pulse Test 2SK2315 Power vs. Temperature Derating Maximum Safe Operation Area 5 100 µs I D , 2SK2315 Static Drain to Source State Resistance vs. Drain Current Static Drain to Source on State , Current I D (A) 5 10 2SK2315 Typical Capacitance vs. Drain to Source Voltage 100 Coss


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PDF 2SK2315 2SK2315 Hitachi DSA00395
Not Available

Abstract:
Text: 2SK2315 Si li con N C h a nn el MOS FET Application High speed power switching Features Low on- resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. · Suitable for DC - DC converter, motor drive, power switch, solenoid drive · · · · , 1 2SK2315 - Table 2 , 120 160 Case Temperature Te ( Ù C) Drain Current 4 2SK2315 Typical Capacitance vs. Drain


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PDF 2SK2315
2005 - 2SK2315TYTR

Abstract:
Text: ) JEITA Package Code Ordering Information Part Name 2SK2315TYTL-E 2SK2315TYTR-E Quantity 1000 , 2SK2315 Silicon N Channel MOS FET REJ03G1006-0200 (Previous: ADE-208-1354) Rev.2.00 Sep , page 1 of 5 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS VGSS ID ID , 30 , VGS = 10 V 2SK2315 Main Characteristics Maximum Safe Operation Area 5 1.6 ID (A , Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) () 2SK2315


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PDF 2SK2315 REJ03G1006-0200 ADE-208-1354) PLZZ0004CA-A 2SK2315TYTR 2SK2315 2SK2315TY(TR-E) 2SK2315TYTL-E 2SK2315TYTR-E
2005 - 2SK2315

Abstract:
Text: Package Code Ordering Information Part Name 2SK2315TYTL-E 2SK2315TYTR-E Quantity 1000 pcs 1000 , . 2SK2315 Silicon N Channel MOS FET REJ03G1006-0200 (Previous: ADE-208-1354) Rev.2.00 Sep.07,2005 , 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 , 30 , VGS = 10 V 2SK2315 Main Characteristics Maximum Safe Operation Area 5 1.6 ID (A , Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) () 2SK2315 160


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PDF
2005 - Not Available

Abstract:
Text: Part Name 2SK2315TYTL-E 2SK2315TYTR-E Quantity 1000 pcs 1000 pcs Shipping Container Taping , developed or manufactured by or for Renesas Electronics. 2SK2315 Silicon N Channel MOS FET REJ03G1006 , Renesas Technology Corp. Rev.2.00 Sep. 07, 2005 page 1 of 5 2SK2315 Absolute Maximum Ratings (Ta , , VGS = 0, f = 1 MHz ID = 1 A, RL = 30 Ω, VGS = 10 V 2SK2315 Main Characteristics Maximum , State Resistance RDS(on) (Ω) 2SK2315 160 Forward Transfer Admittance vs. Drain Current 10


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PDF
2SK series

Abstract:
Text: . 903 2SK2315.


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PDF 2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 2SK+series transistor+2sk
Yamaha YTD

Abstract:
Text: ) KP15N14 4 7 1u/160V 15(1/2W) KP15N14 2SJ278 8(1%) 8(1%) 2SK2315 (3.3uH) 2SK2315 UAMITMN UAMITPN Figure A.1: Pin Connection Example 21 (3.3uH) TDK NL322522T


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PDF YTD427 YTD427 LSI-6TD427A2 0047u 0022u TESTIN12 TESTIN19 8-0319C KP4N12 VRYA15 Yamaha YTD NL322522T-3R3J YTD426B
2001 - lt 6229

Abstract:
Text: 2SK2315 UDM0 2SK2315 A2 RA LICT A1 0.1µ RX CX1 CX2 33k 100 22µ RB TA


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PDF YTD428 YTD428 LSI-6TD428A3 YTD418 YTD423 KP15N14 lt 6229 Yamaha AX 496 YTD423 YTD410 YM7405 YAMAHA RA 200 TRTEPC9.8 pin diagram of lt 542
2001 - varistor vrt

Abstract:
Text: 2SK2315 UDM0 2SK2315 A2 RA LICT A1 0.01µ(10%) 6 RX CX1 CX2 33k 100 22µ


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PDF YTD428 YTD428 LSI-6TD428A32 /160V VRYA15 CLK1536 TEST10 TEST28 CLK200 CLK400 varistor vrt YTD410 TDK TRANSFORMER CATALOG TRTE YM7405 YTD418 YTD423
ECK-F

Abstract:
Text: -3R3J (3.3 µH) 8(1%) 0.01 µ (10%) TDK NL322522T-3R3J (3.3 µH) 2SK2315 2SK2315 UAMITPN


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PDF YTD426B YTD426B LSI-6TD426B3 YTD423B YTD423D. ECK-F TFD 2604 YM7405B YTD410 YTD418 YTD421B YTD427
2000 - 74ls111

Abstract:
Text: 2SK2114_15 2SK2116_17 2SK2118 2SK2144 2SK2202 2SK2203 2SK2212 2SK2225 2SK2247 2SK2315 2SK2328 2SK2329LS


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PDF Switchin2SC3512 2SC3513 2SC3793 2SC3867 2SC4126 2SC4196 2SC4197 2SC4260 2SC4261 2SC4262 74ls111 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
2SK2225 equivalent

Abstract:
Text: 6.0 4.5 5.0 T0220CFM 2SJ471 Neh UPAK 2SK1772 2SK2247 2SK2788 2SK2315 DPAK 2SK2796 2SK2869 SOP , (0.25) O 4AK16(0.12) 2SK1764 (0.3) HATWfifi/OJ» O 4AM11 2SK2315 {0.4) HAT3006R 2SJ245 (0.2 , 2SJ278 2SJ450*3 2SK2247 2SK2315 *3 14330 3.2 40800 2.1 60 85 70 85 105 150 190 220 775 490 180 200 365


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PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK1317 equivalent 2SJ182 equivalent 2SK215 equivalent 2SJ40 2sj332 2sk1058 equivalent
2002 - lvc16244

Abstract:
Text: 2SK2144 2SK2202 2SK2203 2SK2212 2SK2225 2SK2247 2SK2315 2SK2328 2SK2329L 2SK2373 2SK2393 2SK2408 2SK2423


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PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HA13557A HC32 Hitachi H8 hitachi programming manual transistor 2SC1162 2SH12
2000 - TO220CFM

Abstract:
Text: 2SK1579 2SK1697 2SK1698 2SK1764 2SK1772 2SK2247 2SK2315 2SK2788 2SK2978 2SJ130(L)/(S) 2SJ181(L)/(S) 2SJ319


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PDF HAT1024R ADE-208-476G pdf\7420e HAT1044M HAT1053M HAT2053M HAT2054M TO220CFM TO220FM Hitachi DSA00276 hat2070 hat1048 HAT1040T 2sk3235 2sk3148 2SK2978
1997 - hitachi mosfet audio

Abstract:
Text: « 2SK2315 D3 60 2.0 0.45 (0.6) 173 ¡ « 2SK2788 D5 60 2.0


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PDF O-220 HAF2001 500pcsxN) O-92MOD O-126MOD O-126FM O-220AB O-220FM O-220C SP-10 hitachi mosfet audio D4L DIODE 2SK2830 2SK2225 2SJ214LS 2sk2829 2SK1919LS transistors 2SK1317 Hitachi MOSFET 2SK1058
2001 - 7054F

Abstract:
Text: 2sk2097 2sk2114 2sk2116 2sk2118 2sk2144 2sk2202 2sk2203 2sk2212 2sk2225 2sk2247 2sk2315 2sk2328 2sk2329ls


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PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
2000 - 2SK3235

Abstract:
Text: 2SK1579 2SK1697 2SK1698 2SK1764 2SK1772 2SK2247 2SK2315 2SK2788 2SK2978 2SJ130(L)/(S) 2SJ181(L)/(S) 2SJ319


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PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 2SJ517 2SK1835 2SK3421 HAT1040T HAT1053 Hitachi DSA00276 TO220CFM
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