The Datasheet Archive

2SK1910 datasheet (7)

Part Manufacturer Description Type PDF
2SK1910 Hitachi Semiconductor Mosfet Guide Original PDF
2SK1910 Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK1910 Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SK1910 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1910 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1910 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1910 Others FET Data Book Scan PDF

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Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: 2SK1910 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power , . Drain o (Flange) 3. Source OS 2SK1910 Absolute Maximum Ratings (Ta = 25 °C) Item , £2 HITACHI 2 2SK1910 Electrical Characteristics (Ta = 25 °C) Item Symbol Drain to s o u rc e b , e st HITACHI 3 2SK1910 M axim um Safe O pe ra tion A rea P ow er vs. T em p e ra tu re D , rce V olta ge V DS (V) G ate to S ou rce V o lta g e VGS (V) HITACHI 4 2SK1910 S tatic


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PDF 2SK1910 D-85622
2SK1910

Abstract: V6010
Text: 2SK1910 Silicon N C h a n n e l M O S F E T Application High speed power switching Features , 25 °C, Rg> 50 Cl 1 2SK1910 Table 2 Item Electrical Characteristics (Ta = 25°C ) Sym bol , / dt = 50 A / ^is 2 2SK1910 Power vs. Temperature Derating Maximum Safe Operation Area 500 , Characteristics Drain to Source Voltage V DS (V) Gate to Source Voltage VGs (V) 3 2SK1910 Drain to , 80 120 160 Drain Current I (A) Case Temperature Te ( ÙC) 4 2SK1910 Body to Drain


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PDF 2SK1910 2SK1910 V6010
Not Available

Abstract: No abstract text available
Text: 2SK1910 Silicon N-Channel MOS FET HITACHI Application H igh speed power sw itching , ratings Outline 1. Gate 2. Drain (Flange) 3. Source OS 669 2SK1910 Absolute Maximum , = 25 A, Vus = 0 lF = 25 A, VG S = 0, diF / dt = 50 A / ps - HITACHI 671 2SK1910 Maximum , ) 672 HITACHI 2SK1910 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain , perature T c (°C) HITACHI 673 2SK1910 Reverse Recovery Time t rr (ns) Body to Drain Diode


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PDF 2SK1910
1997 - 2SK1910

Abstract: Hitachi DSA001652
Text: 2SK1910 Silicon N-Channel MOS FET November 1996 Application High speed power switching , 2SK1910 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source , . Value at Tch = 25 °C, Rg 50 2 2SK1910 Electrical Characteristics (Ta = 25°C) Item Symbol , 1. Pulse Test 3 2SK1910 Maximum Safe Operation Area Power vs. Temperature Derating 500 , Voltage VDS (V) 4 10 0 1 2 3 4 Gate to Source Voltage VGS (V) 5 2SK1910


Original
PDF 2SK1910 O-220AB D-85622 2SK1910 Hitachi DSA001652
2SK1910

Abstract: 3v1040
Text: 2SK1910 Silicon N Channel MOS FET Application TO­220AB High speed power switching , 2SK1910 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit , - * Pulse Test 2SK1910 Maximum Safe Operation Area Power vs. Temperature Derating 500 , (V) 10 0 1 2 3 4 Gate to Source Voltage VGS (V) 5 2SK1910 Static Drain , 2SK1910 Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Time


Original
PDF 2SK1910 220AB 2SK1910 3v1040
2SJ292

Abstract: 2SK1950 2sk mosfet 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SK1919 2SJ299
Text: 500 2000 TO-220AB 2SJ292 ±20 -30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1910 60 25 50 , 2SJ280 -30 0.06 0.043 DPAK 2SK1949 5 0.2 0.1 5 2SK1950 3 0.3 0.25 TO- 2SK1910 25 0.06 0.04


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2SJ292 2SK1950 2sk mosfet 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SK1919 2SJ299
2SK series

Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
Text: ). 662 2SK1910.


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PDF 2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
2sk1299

Abstract: 2sk1205 2SJ298 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SJ299
Text: 500 2000 TO-220AB 2SJ292 ±20 -30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1910 60 25 50 , 0.043 DPAK 2SK1949 5 0.2 0.1 5 2SK1950 3 0.3 0.25 TO- 2SK1910 25 0.06 0.04 Neh 220AB 2SK1911


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sk1299 2sk1205 2SJ298 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SJ299
2sj177

Abstract: 2SJ299 PF0040 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 TO220FM Hitachi PF0030
Text: 500 2000 TO-220AB 2SJ292 ±20 -30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1910 60 25 50 , 2SJ280 -30 0.06 0.043 DPAK 2SK1949 5 0.2 0.1 5 2SK1950 3 0.3 0.25 TO- 2SK1910 25 0.06 0.04


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sj177 2SJ299 PF0040 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 TO220FM Hitachi PF0030
PF0040

Abstract: pf0030 hitachi 2sk mosfet 2sk1299 2sk mosfet rf power 2SJ299 2sj217 2SJ295 2SK1919 Hitachi PF0030
Text: 500 2000 TO-220AB 2SJ292 ±20 -30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1910 60 25 50 , 0.043 DPAK 2SK1949 5 0.2 0.1 5 2SK1950 3 0.3 0.25 TO- 2SK1910 25 0.06 0.04 Neh 220AB 2SK1911


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 PF0040 pf0030 hitachi 2sk mosfet 2sk1299 2sk mosfet rf power 2SJ299 2sj217 2SJ295 2SK1919 Hitachi PF0030
BI 370

Abstract: 2SK1878 LM9005 2SK1853 2SK1859 2SK1862 2SK1867 2SK1868 2SK1869 2SK1877
Text: 2SK1910 Bi HS PSW MOS N E 60 DSS ±20 s 25 D 50 ±10« ±16 250« 60 2 10 lm 12 21 10 15 2SK1911 Bi HS , GDS 2SK1910 3530 300 0 10 0. 022 10 20 ton=190ns, toff=670nstyp 1D=20A. VGS=10V 116B GDS, tfÃ


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PDF 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 1116B 2SK1911 130ns, 370nstyp 2SK1918 BI 370 2SK1878 LM9005 2SK1867 2SK1868 2SK1869 2SK1877
Not Available

Abstract: No abstract text available
Text: curve of 2SK1910. 2 2SK2119 NORMALIZED TRANSIENT THERMAL IMPEDANCE VS. PULSE WIDTH Picture Not


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PDF 2SK2119 2SK1910.
25K1772

Abstract: 2SJ300 2SK1763 2SJ279 2SJ278 2SK1645 2SJ245 2SJ244 TO220FM 2sk mosfet
Text: - 2SK1910 25 0.06 0.04 Neh 220AB 2SK1911 60 40 0.028 0.022 TO- 2SK1951 25 0.06 0.04 220FM 2SK1952 40


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PDF 2SJ244 2SJ246 2SJ245 2SJ317 2SJ298 2SJ300 2SJ299 2SJ278 2SJ279 2SJ290 25K1772 2SK1763 2SJ279 2SJ278 2SK1645 2SJ245 2SJ244 TO220FM 2sk mosfet
mosfet 740

Abstract: 2SJ299 2SJ292 2sj298 2SJ291 2SJ290 2SJ279 2SJ278 2SJ317 2SJ295
Text: 500 2000 TO-220AB 2SJ292 ±20 -30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1910 60 25 50


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PDF packag45 2SK1910 2SK1911 2SJ293 2SJ294 T0-220FM 2SJ295 2SK1951 2SK1952 2SJ296 mosfet 740 2SJ299 2SJ292 2sj298 2SJ291 2SJ290 2SJ279 2SJ278 2SJ317 2SJ295
2SK1910

Abstract: 2SK2119
Text: - * Pulse Test s See characteristic curve of 2SK1910. -


Original
PDF 2SK2119 220CFM 2SK1910. 2SK1910 2SK2119
Not Available

Abstract: No abstract text available
Text: = 2 5 A, VGS = 0, diF / dt = 50 A / ^is See characteristics curves of 2SK1910 2 2SK1951


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PDF 2SK1951 2SK1910
2SK1910

Abstract: 2SK1951
Text: - * Pulse Test See characteristics curves of 2SK1910 Hitachi Semiconductor


Original
PDF 2SK1951 220FM 2SK1910 2SK1910 2SK1951
2SK2119

Abstract: 2SK1910
Text: characteristic curve of 2SK1910. HITACHI 3 2SK2119 60 Power vs. Temperature Derating o CL CO Q. 40 5 20 tu c c CO


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PDF 2SK2119 O-22QCFM D-85622 2SK1910
Not Available

Abstract: No abstract text available
Text: 15 A VGS= 1 0 V RL = 2 Í2 1. Pulse Test See characteristics curves of 2SK1910 HITACHI 3


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PDF 2SK1951 O-220FM
1997 - 2Sk1951

Abstract: Hitachi DSA001652
Text: Test See characteristics curves of 2SK1910 3 2SK1951 Power vs. Temperature Derating


Original
PDF 2SK1951 O-220FM D-85622 2Sk1951 Hitachi DSA001652
2sj177

Abstract: 2sk1778 2sk1301 2SK97-2 2SK580 2SK579 2SK1153 2SK1152 2SK1151 2sj175
Text: 2SJ280 -30 0.06 0.043 DPAK 2SK1949 5 0.2 0.1 5 2SK1950 3 0.3 0.25 TO- 2SK1910 25 0.06 0.04


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sj177 2sk1778 2sk1301 2SK97-2 2sj175
2sj177

Abstract: 2sk1299 2SK1763 2SK1878 2SJ279 2SJ278 2sj235 2SJ245 2SJ244 2SK1579
Text: - 2SK1910 25 0.06 0.04 Neh 220AB 2SK1911 60 40 0.028 0.022 TO- 2SK1951 25 0.06 0.04 220FM 2SK1952 40


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PDF 2SJ244 2SJ246 2SJ245 2SJ317 2SJ298 2SJ300 2SJ299 2SJ278 2SJ279 2SJ290 2sj177 2sk1299 2SK1763 2SK1878 2SJ279 2SJ278 2sj235 2SJ245 2SJ244 2SK1579
1997 - Hitachi DSA001652

Abstract: No abstract text available
Text: Test See characteristic curve of 2SK1910. 3 2SK2119 Power vs. Temperature Derating


Original
PDF 2SK2119 O-220CFM D-85622 Hitachi DSA001652
1997 - 2SK1918S

Abstract: Hitachi DSA001652
Text: 2SK1910 3 2SK1918(L), 2SK1918(S) Power vs. Temperature Derating Channel Dissipation Pch (W) 60


Original
PDF 2SK1918 D-85622 2SK1918S Hitachi DSA001652
Not Available

Abstract: No abstract text available
Text: characteristics curves of 2SK1910 HITACHI 3 -P ^ HITACHI 2SK1918ÇL), 2SK1918ÇS) 2SK1918Ã


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PDF 2SK1918 2SK1918Ã
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