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2SK1867 datasheet (1)

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Not Available

Abstract:
Text: 2SK1867 Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS Unit : mm s Features 10.0±0.2 energy capability guaranteed : EAS >15mJ secondary breakdown q Radial taping possible 18.0±0.5 Solder Dip q No switching: tf = 26ns 90˚ 2.5±0.2 q VGSS= ±30V guaranteed q , VDS= 20V, VGS= 0, f=1MHz VGS=10V, I D= 2A VDD= 200V, RL= 100Ω 8.33 ˚C/W 2SK1867 , Junction temperature Tj (˚C) 150 2SK1867 Power F-MOS FETs Vth –TC VDS, VGS – Qg 700


Original
PDF 2SK1867
2SK1867

Abstract:
Text: Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No secondary breakdown q Allowing to supply by the radial taping unit: mm 5.0±0.1 18.0±0.5 Solder Dip , 105 ns 8.33 °C/W 1 Power F-MOS FETs 2SK1867 | Yfs | ID 3.0 VDS=25V 6 25 , 2SK1867 VDS, VGS Qg 6 700 Drain to source voltage VDS (V) Gate threshold voltage Vth (V


Original
PDF 2SK1867 2SK1867 power Junction FET
Not Available

Abstract:
Text: Power F-MOS FETs Panasonic 5 .0 ± 0.1 Silicon N-Channel Power F-MOS Features 2SK1867 Unit : mm · · · · · · · · · · Avalanche energy capability guaranteed : EAS >15mJ VGss= ±30V guaranteed High-speed switching: tf = 26ns No secondary breakdown Radial taping possible Non-contact relay , -S o u rc e O N -re s is ta n c e RDS(on) (Q ) o C« 'o' "T I-I Ö 2SK1867 Power F-MOS FETs 2SK1867 Vth-Tc V ü S ,V G S -Q g > $ C D 15 0 25 50 75


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PDF 2SK1867
1999 - Not Available

Abstract:
Text: Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No secondary breakdown q Allowing to supply by the radial taping unit: mm 5.0±0.1 10.0±0.2 1.0 M Di ain sc te on na , 2SK1867 | Yfs | ID Forward transfer admittance |Yfs| (S) RDS(on) ID VDS=25V Drain to source , FETs Vth TC 6 2SK1867 VDS, VGS Qg 700 Drain to source voltage VDS (V) Gate threshold


Original
PDF 2SK1867
1999 - mj 13002

Abstract:
Text: Power F-MOS FETs 2SK1867 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No secondary breakdown q Allowing to supply by the radial taping M Di ain sc te on na tin nc ue e/ d , 900 pF 40 ns 35 ns 105 ns 8.33 °C/W 1 Power F-MOS FETs 2SK1867 , ) Power F-MOS FETs 2SK1867 VDS, VGS Qg 6 700 Drain to source voltage VDS (V) Gate


Original
PDF 2SK1867 mj 13002 2sk18 2SK1867
2sk2324

Abstract:
Text: 2.2 2.2 3.5 5.5 2SK1867 2SK1612 2SK2130 2SK2340 2SK1613 2SK1614 2SK1803 2SK2374


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PDF O-22C O-220E 2SK1605 2SK1606 2SK2123 2SK2124 2SK1607 2SK2032 2SK2571 2SK2509 2sk2324 2SK2127 2sk2323
BI 370

Abstract:
Text: , SW-Reg MOS N E 500 DSS ±30 s 3 D 25 ±10« ±25 250« 400 2 3 10 lm 1.5 2.5 10 2 2SK1867 fâT Motor , 2SK1863 730 40 0 20 4.85 10 2 ton=40ns, tf=35nstyp ID=2A, VDD=200V 349 GDS 2SK1867 400 80 0 10


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PDF 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 1116B 2SK1911 130ns, 370nstyp 2SK1918 BI 370 2SK1878 LM9005 2SK1867 2SK1868 2SK1869 2SK1877
Not Available

Abstract:
Text: 5 10 2 3 750 4 3 2SK2129 2SK2210 td(on)25 40 90 100 2SK1867 2SK1612 2SK2130 2SK2340


OCR Scan
PDF O-220E 2SK1406 A2SK2572 2SK1605 2SK1606 2SK2123 2SK2124 2SK1607 2SK2032 2SK2571
2SK2324

Abstract:
Text: A2SK2129 TO-220E D63 3 50 4.0 2.4 35 50 160 A2SK2210 TO-220E D63 4 50 3.5 2.0 25 50 150 2SK1867 MT4


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PDF 2SK758 O-220F 2SK963 2SK1478 A2SK2122 O-220E 2SK1036 2SK766 2SK2324 220E 2SK76 2sk203 2SK2129 2SK1331 d632 2SK1606 2sk2128
2SK2324

Abstract:
Text: A2SK2129 TO-220E D63 3 50 4.0 2.4 35 50 160 A2SK2210 TO-220E D63 4 50 3.5 2.0 25 50 150 2SK1867 MT4


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PDF 2SK758 O-220F 2SK963 2SK1478 A2SK2122 O-220E 2SK1036 2SK766 2SK2324 TO-220E 2SK2129 2SK1614 2SK1609 2SK1611 2SK1606 2SK1605 2SK1331
ON3105

Abstract:
Text: 2SK1687 2SK1688 2SK1867 2SK1868 2SK199 2SK2017 2SK2047 2SK2122 2SK218 2SK2323 2SK2326 2SK2342 2SK2377


Original
PDF MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 ON3105 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C GN2013 2SC5573
AN3962FB

Abstract:
Text: No file text available


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PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 IC AN7135 MN1874033 mn19412 an3814k an8294nsb MN1883214 mn4117405 AN7104
2SC5936

Abstract:
Text: No file text available


Original
PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
2sc5929

Abstract:
Text: No file text available


Original
PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
IGBT M16 100-44

Abstract:
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 ASEA HAFO AB SEMICON INDEXES GM378 transistor 8BB smd Kt606 Ericsson SPO 1410 Transistor B0243C Ericsson RBS 6102 2SJ480
Supplyframe Tracking Pixel