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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2SK1830 (TE85L) Toshiba America Electronic Components Chip One Exchange 2,500 - -
2SK1830-TE85L Toshiba America Electronic Components Bristol Electronics 2,634 $0.30 $0.06
2SK1830,LF(T Toshiba America Electronic Components Avnet - €0.13 €0.05
2SK1830(TE85L,F) Toshiba America Electronic Components Avnet - €0.09 €0.05
2SK1830(TE85L,F) Toshiba America Electronic Components Chip1Stop 5,000 $0.42 $0.38

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2SK1830 datasheet (9)

Part Manufacturer Description Type PDF
2SK1830 Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min 0.5) (max 1.5); R DS On 20 (max 40); Drain-Source Voltage (V): (max 20); Drain Current (mA): (max 50) Original PDF
2SK1830 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK1830 Toshiba TRANS MOSFET N-CH 20V 0.05A 3(2-2H1B) Scan PDF
2SK1830 Toshiba Silicon N channel field effect transistor for high speed switching applications and analog switch applications Scan PDF
2SK1830 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
2SK1830TE85L Toshiba 2SK1830 - TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Original PDF
2SK1830(TE85L,F) Toshiba 2SK1830 - Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R Original PDF
2SK1830TE85LF Toshiba 2SK1830TE85LF - Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R Original PDF
2SK1830TE85R Toshiba 2SK1830 - TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Original PDF

2SK1830 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SK1830

Abstract: No abstract text available
Text: 2SK1830 NMOS 2SK1830 : mm · , · Vth , CMOS · · , (//) 2-2H1B , (/, : 2.4 mg () ) , () (, ) , 1 2007-11-01 2SK1830 (Ta = 25 , D G KI S 2 2007-11-01 2SK1830 (a) ID 2.5 V 10 s RL 50 , 2SK1830 Yfs ­ ID C ­ VDS 100 50 VDS = 3 V 50 Ta = 25°C VGS = 0 30 30 , 2SK1830 · · · · "" · · · ·


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PDF 2SK1830 2SK1830
2014 - Not Available

Abstract: No abstract text available
Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage , 2SK1830 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min , Ž¯ 0.14 ⎯ μs Switching Time Test Circuit 2 2014-03-01 2SK1830 3 2014-03-01 2SK1830 4 2014-03-01 2SK1830 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its


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PDF 2SK1830
Not Available

Abstract: No abstract text available
Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Unit: mm Small package , handle with caution. 1 2003-03-27 2SK1830 Electrical Characteristics (Ta = 25 , 2SK1830 3 2003-03-27 2SK1830 4 2003-03-27 2SK1830 RESTRICTIONS ON PRODUCT USE


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PDF 2SK1830
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1830 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2SK1830 · · · · · 2.5V Gate Drive Low Threshold , . 1997 04-10 - 1/4 TOSHIBA 2SK1830 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC , d COMMON SOURCE Ta = 25°C V O U T VDS (ON) 1997 04-10 - 2/4 TOSHIBA 2SK1830 , (V) 1997 04-10 - 3/4 TOSHIBA 2SK1830 v d s (o n ) - id 1000 t - ID VD D


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PDF 2SK1830
2007 - 2SK1830

Abstract: No abstract text available
Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications · 2.5 V gate drive · Low threshold voltage: Vth , 2007-11-01 2SK1830 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , ~2.5 V 0.14 s Switching Time Test Circuit 2 2007-11-01 2SK1830 3 2007-11-01 2SK1830 4 2007-11-01 2SK1830 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL


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PDF 2SK1830 2SK1830
2003 - 2SK1830

Abstract: No abstract text available
Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications · 2.5 V gate drive · Low threshold voltage: Vth = 0.5~1.5 V · High speed · Enhancement-mode · Unit: mm Small package Marking , . 1 2003-03-27 2SK1830 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , Circuit 2 2003-03-27 2SK1830 3 2003-03-27 2SK1830 4 2003-03-27 2SK1830


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PDF 2SK1830 2SK1830
Not Available

Abstract: No abstract text available
Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage , caution. 1 2007-11-01 2SK1830 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , ⎯ Switching time μs Switching Time Test Circuit 2 2007-11-01 2SK1830 3 2007-11-01 2SK1830 4 2007-11-01 2SK1830 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation


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PDF 2SK1830
Not Available

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1830 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2SK1830 1.6 0 .8 + Unit in mm ± 0.2 0.1 2.5V , ithout notice. 1998 03-25 - 1/4 TO SHIBA 2SK1830 ELECTRICAL CHARACTERISTICS (Ta = 25 , VDD' '" fit l\ 90% « tT 10% V d S (ON) uo n 1998 03-25 - 2/4 TO SHIBA 2SK1830 , 2SK1830 v d s (o n ) - id 1000 500 300 V \ s, SN > t 0 ( f \ t - ID > 100 50 30 _


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PDF 2SK1830
2007 - Not Available

Abstract: No abstract text available
Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications · · · · · 2.5 V gate drive Low threshold voltage: Vth = , 2003-03-27 2SK1830 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , Switching Time Test Circuit 2 2003-03-27 2SK1830 3 2003-03-27 2SK1830 4 2003-03-27 2SK1830 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to change without


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PDF 2SK1830
ei33

Abstract: 2SK1830 J-10
Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = , contained herein is subject to change without notice. 1998-03-25 1/4 TOSHIBA 2SK1830 ELECTRICAL , -10% vOUT VDS(ON) ■90% rw% t-90% » tr tf Lon t0ff 1998-03-25 2/4 TOSHIBA 2SK1830 ID - vds , 20 DRAIN-SOURCE VOLTAGE VDS (V) 1998-03-25 3/4 TOSHIBA 2SK1830 3000 1000 vds(on) - id 30 50


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PDF 2SK1830 10//S ei33 2SK1830 J-10
2SK1830

Abstract: No abstract text available
Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = , contained herein is subject to change without notice. 2001-02-16 1/4 TOSHIBA 2SK1830 ELECTRICAL , 0 vdd J vOUT VDS(ON) 10% i-90% ■90% /■10% Lon 2001-02-16 2/4 TOSHIBA 2SK1830 id - , 10 DRAIN-SOURCE VOLTAGE VDS (V) 2001-02-16 3/4 TOSHIBA 2SK1830 3000 1000 vds(on) - id 1 3 5


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PDF 2SK1830 10//S 2SK1830
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 830 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage , contained herein is subject to change w ith o u t notice. 1998 03-25 - 1/4 TOSHIBA 2SK1830 , 2SK1830 id vds - id - vds (l o w v o l t a g e r e g io n ) 5 5 e a , Ÿ ímA) DRAIN-SOURCE VOLTAGE 1998 03-25 - 3/4 TOSHIBA 2SK1830 v d s (o n ) - Id


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PDF 2SK1830
2SK1830

Abstract: No abstract text available
Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications · 2.5 V gate drive · Low threshold voltage: Vth , 2007-11-01 2SK1830 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , ~2.5 V 0.14 s Switching Time Test Circuit 2 2007-11-01 2SK1830 3 2007-11-01 2SK1830 4 2007-11-01 2SK1830 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation


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PDF 2SK1830 2SK1830
2012 - Not Available

Abstract: No abstract text available
Text: Reliability Tests Report Product Name: 2SK1830 Package Name: SSM 1. Thermal tests Test Item Heat resistance (Reflow) Heat resistance (Iron) Temperature cycling - Test Condition Peak , 2SK1830 0.37 Fit or less Above estimated value is determined with the standard operation under the , Name: Package Name: 2SK1830 SSM 1.Reflow Number: 4 times maximum Peak : 260 deg.C(a , Sensitivity Level) Product Name : 2SK1830 Package Name : USM Always store the Product under moisture


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PDF 2SK1830
Not Available

Abstract: No abstract text available
Text: SILICON N CHANNEL MOS TYPE 2SK1830 HIGH SPEED SW ITCHING APPLICATIONS. A N A L O G SWITCH APPLICATIONS. · · . · · 2.5 V olts G ate D rive. Low Threshold V oltage : V th = 0 .5 ~ 1 .5 V H igh Speed Enhancem ent-M ode S m a ll P ackage MARKING KI M A X IM U M RATINGS (Ta = 25°C) CH A R A C T ER IST IC D rain-Source V oltage G ate-Source V oltage DC D rain C urrent D rain Power D , g s = 0 ~ 2 .5 V V M V mS a pF pF pF ¿'S MS 613 2SK1830 SW ITCHING T IM E TEST CIRCUIT


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PDF 2SK1830
2SK1830 MOSFET

Abstract: mosfet vgs 5v 2SK1830 HN7G01FU 2SA1955 mosfet vth 5v
Text: HN7G01FU HN7G01FU : mm MOS-FET Q1 () Q2 (MOS-FET ) : 2SA1955 : 2SK1830 Q1 () (Ta = 25°C) VCBO 15 V VCEO 12 V VEBO 5 V IC 400 mA IB 50 mA JEDEC JEITA : 6.8 mg () Q2 (MOS-FET) (Ta = 25°C) VDS 20 V VGSS 10 V ID 50 mA Q1Q2


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PDF HN7G01FU 2SA1955 2SK1830 2SK1830 MOSFET mosfet vgs 5v 2SK1830 HN7G01FU 2SA1955 mosfet vth 5v
2SJ347

Abstract: 2SK1830
Text: 2SJ347 PMOS 2SJ347 : mm · , · Vth , CMOS : Vth = -0.5~-1.5 V · · , · 2SK1830 (Ta = 25°C) VDS -20 V VGSS -7 V ID -50 mA PD 100 mW Tch 150 °C Tstg -55~150 °C : JEDEC JEITA 2-2H1B (//) : 2.4 mg () (/ ) () () 1 2007-11-01 2SJ347 (Ta = 25


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PDF 2SJ347 2SK1830 2SJ347 2SK1830
2SK1830

Abstract: HN7G05FU RN2301 ID3-050
Text: HN7G05FU HN7G05FU : mm S-MOS Q1 Q2MOS-FET RN2301 2SK1830 Q1 (Ta = 25°C) VCBO -50 V VCEO -50 V VEBO -10 V IC -100 mA VDS 20 V VGSS 10 V I 50 mA JEDEC JEITA 2-2J1E : 0.0068 g () Q2 (Ta = 25°C) Q1,Q2 (Ta = 25


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PDF HN7G05FU RN2301 2SK1830 2SK1830 HN7G05FU RN2301 ID3-050
2Sj148

Abstract: 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
Text: 2SJ305 P-ch 2SJ168 2SJ343 2SJ345 2SK1827 2SK1829 2SK2034 2SK2037 2SJ344 2SJ346 2SK1830 2SK2035 2SJ347


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PDF 2SC2705 2SC1627A 2SC2235 2SC2236 2SC3423 2SC3419 2SC3421 2SC3422 2SD880 2SD525 2Sj148 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
2003 - 2SJ347

Abstract: 2SK1830
Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications · Low threshold voltage: Vth = -0.5~-1.5 V · High speed · Small package · Unit: mm Complementary to 2SK1830 Marking Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS -7 V DC drain current ID -50 mA Drain power


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PDF 2SJ347 2SK1830 2SJ347 2SK1830
2SJ347

Abstract: 2SK1830 Toshiba 2SJ
Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications · Low threshold voltage: Vth = -0.5~-1.5 V · High speed · Small package · Unit: mm Complementary to 2SK1830 Marking Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS -7 V DC drain current ID -50 mA Drain power


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PDF 2SJ347 2SK1830 2SJ347 2SK1830 Toshiba 2SJ
2005 - Power MOSFET, toshiba

Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 (transistor): RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -10 V IC


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PDF HN7G05FU RN2301 2SK1830 Power MOSFET, toshiba HN7G05FU Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
2007 - Not Available

Abstract: No abstract text available
Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application · · Q1 (transistor): 2SA1955 equivalent Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating -15 -12 -5 -400 -50 Unit V V V mA mA Q2 (MOS-FET) Absolute


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PDF HN7G01FU 2SA1955 2SK1830
2003 - HN7G01FU

Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application · Q1 (transistor): 2SA1955 equivalent · Unit: mm Q2 (MOS-FET): 2SK1830 equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -5 V Collector current IC -400


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PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
2007 - 2SJ347

Abstract: 2SK1830 Toshiba 2SJ
Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications · Low threshold voltage: Vth = -0.5~-1.5 V · High speed · Small package · Unit: mm Complementary to 2SK1830 Marking Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS -7 V DC drain current ID -50 Drain power


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PDF 2SJ347 2SK1830 2SJ347 2SK1830 Toshiba 2SJ
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