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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2SK160-L NEC Electronics Group Bristol Electronics 950 $1.65 $0.58
2SK160-LK4 NEC Electronics Group Bristol Electronics 985 $0.75 $0.15
2SK1602 Toshiba America Electronic Components ComS.I.T. 1,650 - -
2SK160A-L-A Renesas Electronics Corporation Rochester Electronics 6,535 $0.18 $0.15
2SK160A-T1B-A Renesas Electronics Corporation Avnet - - -
2SK160A-T1B-A Renesas Electronics Corporation Rochester Electronics 21,830 $0.15 $0.12
2SK160A(1)-T1B-A Renesas Electronics Corporation Rochester Electronics 7,290 $0.18 $0.15
2SK160A(T1B-A) Renesas Electronics Corporation Chip1Stop 400 $1.43 $1.43
2SK1620L-E Renesas Electronics Corporation Rochester Electronics 1,289 $3.02 $2.46
2SK1620S Hitachi Ltd ComS.I.T. 208 - -
2SK1620STR-E Renesas Electronics Corporation Rochester Electronics 3,000 $3.02 $2.46
2SK1623STRE Renesas Electronics Corporation ComS.I.T. 1,000 - -
2SK1626-E Renesas Electronics Corporation Rochester Electronics 1,534 $1.25 $1.02
2SK1626-E Renesas Electronics Corporation Chip1Stop 90 $15.80 $13.20
2SK1629-E Renesas Electronics Corporation Rochester Electronics 309 $7.66 $6.22
2SK1636L-E Renesas Electronics Corporation Rochester Electronics 4,015 $3.20 $2.60
2SK1637-E Renesas Electronics Corporation Rochester Electronics 1,444 $1.56 $1.27
2SK1647L-E Renesas Electronics Corporation Chip1Stop 360 $8.12 $6.34
2SK1647STL-E Renesas Electronics Corporation Avnet - - -
2SK1656(A) Renesas Electronics Corporation Chip1Stop 500 $2.03 $1.70
2SK1657-T1B-A Renesas Electronics Corporation Rochester Electronics 70,805 $0.29 $0.24
2SK1657-T2B-A Renesas Electronics Corporation Rochester Electronics 12,000 $0.29 $0.24
2SK1657(T1B-A) Renesas Electronics Corporation Chip1Stop 5,300 $1.73 $1.41
2SK1658-T1-A Renesas Electronics Corporation Rochester Electronics 3,000 $0.16 $0.13
2SK1667-E Renesas Electronics Corporation Rochester Electronics 1,448 $1.63 $1.32
2SK1667(E) Renesas Electronics Corporation Chip1Stop 60 $14.10 $12.00
2SK1668(E) Renesas Electronics Corporation Chip1Stop 40 $14.10 $13.40
2SK1669 Hitachi Ltd ComS.I.T. 810 - -
2SK1670 Hitachi Ltd Bristol Electronics 15 - -
2SK1671-E Renesas Electronics Corporation Chip1Stop 351 $24.00 $17.80
2SK1691-DL-E ON Semiconductor Chip1Stop 48 $2.70 $1.40
2SK1691-E ON Semiconductor Rochester Electronics 2,000 $2.21 $1.79
2SK1697EYTL Hitachi Ltd Chip One Exchange 150 - -
2SK1697EYTL-E Renesas Electronics Corporation Avnet - - -
2SK1697EYTL-E Renesas Electronics Corporation Avnet - - -
2SK1697EYTL-E Renesas Electronics Corporation Chip1Stop 1,383 $0.35 $0.23
S802S-K16 ABB Low Voltage Products and Systems Allied Electronics & Automation - $278.50 $264.57

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2SK16 datasheet (500)

Part Manufacturer Description Type PDF
2SK16 Others Shortform Datasheet & Cross References Data Scan PDF
2SK16 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK160 NEC Semiconductor Selection Guide 1995 Original PDF
2SK160 Others Shortform Datasheet & Cross References Data Scan PDF
2SK160 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK160 Others Shortform Transistor PDF Datasheet Scan PDF
2SK160 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK160 Others FET Data Book Scan PDF
2SK160 Toshiba TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3A I(D),TO-220AB Scan PDF
2SK1600 Toshiba Original PDF
2SK1600 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SK1600 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1600 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1600 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK1600 Others FET Data Book Scan PDF
2SK1600 Toshiba TRANS MOSFET N-CH 800V 3A 3TO-220AB Scan PDF
2SK1601 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SK1601 Toshiba Original PDF
2SK1601 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1601 Others Catalog Scans - Shortform Datasheet Scan PDF

2SK16 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SK30

Abstract: 2sK30 fet 2SK34 2SK19TM FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
Text: 2SK16 (H) BjZ Hi-Imp A N D -20 s 10m G 100m -ln -6 0. 5m 7m 6 -0. S -5 6 o.líi lu 3m 6 IDSS 2SK17 , 3 SGD* 2SK16 (H) 4 1.2 0 0 1 lk IM 7 SGD, -regZSnOATM 2SK17 4.5 2 -10 0 AVGS/ATa


OCR Scan
PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 10DGS, 2SK41NP 2SK25 2SK30ATM 2SK30 2SK30 2sK30 fet 2SK34 2SK19TM FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
2SK68A

Abstract: 2SK44 2sK30 fet 2SK34 2SK60 FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
Text: 2SK16 (H) BjZ Hi-Imp A N D -20 s 10m G 100m -ln -6 0. 5m 7m 6 -0. S -5 6 o.líi lu 3m 6 IDSS 2SK17 , 3 SGD* 2SK16 (H) 4 1.2 0 0 1 lk IM 7 SGD, -regZSnOATM 2SK17 4.5 2 -10 0 AVGS/ATa , #2SK1109 2SK67A 13 Z. 6 0 10 53A DGS, ft# 2SK163 2SK68 13 Z. 6 0 10 0.6 1. 5 lk lk !VF=5dBtyp


OCR Scan
PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK65 2SK66 2SK1109 2SK67 2SK68A 2SK44 2sK30 fet 2SK34 2SK60 FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
2SK520

Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK518 2SK519 2SK514 2sk43
Text: 2SK16 (H) BjZ Hi-Imp A N D -20 s 10m G 100m -ln -6 0. 5m 7m 6 -0. S -5 6 o.líi lu 3m 6 IDSS 2SK17 , 3 SGD* 2SK16 (H) 4 1.2 0 0 1 lk IM 7 SGD, -regZSnOATM 2SK17 4.5 2 -10 0 AVGS/ATa


OCR Scan
PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK521 100MHZ 2SK522 20mVmax 2SK523 2SK520 2SK523 2SK508 2SK537 2sk515 2SK511 2SK518 2SK519 2SK514 2sk43
2000 - HA17741

Abstract: IC ha17741 Astable Multivibrator operation amplifier Wien Bridge Oscillator sine 50 hz bistable multivibrator SINE WAVE oscillator astable Multivibrator 74 Hitachi 2sk16 2SK16 2SC1706
Text: Waveform Wien Bridge Sine Wave Oscillator 1S2074 H R4 470 k R3 1 M C3 2SK16 H 5.1 k RS -


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PDF HA17741/PS ADE-204-043 HA17741/PS HA17741PS HA17741 HA17741 IC ha17741 Astable Multivibrator operation amplifier Wien Bridge Oscillator sine 50 hz bistable multivibrator SINE WAVE oscillator astable Multivibrator 74 Hitachi 2sk16 2SK16 2SC1706
1998 - IC ha17741

Abstract: HA17741 HA17741 datasheet Astable Multivibrator operation amplifier bistable multivibrator Wien Bridge Oscillator sine 50 hz 2SC1706 quadrature phase sine wave generator OF HA17741 HA17741PS
Text: Wave Oscillator 1S2074 H R4 470 k R3 1 M C3 2SK16 H 5.1 k RS - 500 Rin Vout


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PDF HA17741/PS HA17741/PS HA17741PS HA17741 IC ha17741 HA17741 HA17741 datasheet Astable Multivibrator operation amplifier bistable multivibrator Wien Bridge Oscillator sine 50 hz 2SC1706 quadrature phase sine wave generator OF HA17741 HA17741PS
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: No file text available


OCR Scan
PDF
2000 - 2SK16

Abstract: 2SK1302 2SK1623 Hitachi DSA00316
Text: 2SK1623 (L), 2SK1623 (S) Silicon N-Channel MOS FET ADE-208-1299 (Z) 1st. Edition Mar. 2001 , . Drain 3. Source 4. Drain 2SK1623 (L), 2SK1623 (S) Absolute Maximum Ratings (Ta = 25°C) Item , °C Notes 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1623 (L), 2SK1623 (S , 2SK1302. 3 2SK1623 (L), 2SK1623 (S) Power vs. Temperature Derating Channel Dissipation Pch (W) 60 40 20 0 4 50 100 Case Temperature TC (°C) 150 2SK1623 (L), 2SK1623 (S


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PDF 2SK1623 ADE-208-1299 2SK16 2SK1302 Hitachi DSA00316
1999 - 2SK1667

Abstract: Hitachi DSA00335
Text: 2SK1667 Silicon N-Channel MOS FET Application High speed power switching Features · · · , . Drain (Flange) 3. Source G S 2SK1667 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , 180 - ns I F = 7 A, VGS = 0, diF/dt = 100 A/µs Note 2 1. Pulse test 2SK1667 , Gate to Source Voltage V GS (V) 3 2SK1667 Static Drain to Source on State Resistance vs. Drain , 0.5 1 2 Drain Current I D (A) 5 10 2SK1667 Typical Capacitance vs. Drain Source


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PDF 2SK1667 O-220AB 2SK1667 Hitachi DSA00335
1999 - 2SK1620

Abstract: 2SK740 Hitachi DSA00347
Text: 2SK1620 (L), 2SK1620 (S) Silicon N-Channel MOS FET Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current No secondary , 1 2 1 2 3 3 D G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1620 (L), 2SK1620 , . Value at TC = 25°C 2 2SK1620 (L), 2SK1620 (S) Electrical Characteristics (Ta = 25°C) Item , characteristic curves of 2SK740. 3 2SK1620 (L), 2SK1620 (S) Power vs. Temperature Derating Channel


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PDF 2SK1620 2SK740 Hitachi DSA00347
1999 - 2SK1337

Abstract: 2SK1698 DSA003721
Text: 2SK1698 Silicon N-Channel MOS FET Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can , Outline UPAK 3 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK1698 , ceramic board (12.5 × 20 × 0.7 mm) 3. Marking is "FY". 2 2SK1698 Electrical Characteristics (Ta = , 2SK1698 Maximum Safe Operation Area Power vs. Temperature Derating 5 3 ar (o ea n) DS


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PDF 2SK1698 2SK1337 2SK1698 DSA003721
AM/FM tuner kwang

Abstract: AM-FM TUNER tuner kwang sung AM/FM tuner CDA10.7mg murata FM stereo MPX Decoder B.P.F FM tuner kwang GFMB7 AM/FM tuner toko
Text: 9 GND LPF2 M FM OSC 18 2SK161 220u 19 470k 5p 470k 10 TUN LED


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PDF S1A0902X01 24-SDIP-300 S1A0902X01 24-TSSOP S1A0902X01-A0B0 S1A0902X01-R0B0 0902X01 AM/FM tuner kwang AM-FM TUNER tuner kwang sung AM/FM tuner CDA10.7mg murata FM stereo MPX Decoder B.P.F FM tuner kwang GFMB7 AM/FM tuner toko
2005 - 2SK1637

Abstract: m 1305 2SK1637-E PRSS0003AD-A
Text: 2SK1637-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may , 2SK1637 Silicon N Channel MOS FET REJ03G0962-0200 (Previous: ADE-208-1305) Rev.2.00 Sep 07 , .2.00 Sep 07, 2005 page 1 of 6 2 3 1. Gate 2. Drain 3. Source S 2SK1637 Absolute Maximum , , VGS = 0, diF/dt = 100 A/µs 2SK1637 Main Characteristics Maximum Safe Operation Area O is , 0.2 0.5 1 2 5 10 Drain Current ID (A) 20 2SK1637 Forward Transfer Admittance


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PDF 2SK1637 REJ03G0962-0200 ADE-208-1305) PRSS0003AD-A O-220FM) 2SK1637 m 1305 2SK1637-E PRSS0003AD-A
Sony Semiconductor Replacement Handbook 1991

Abstract: 2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram replacement for 2sc5088 horizontal transistors motorola power fet rf databook 2SK170BL Funkamateur transistor 1060 schematic diagram tv sony
Text: No file text available


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PDF
1999 - 2SK1155

Abstract: 2SK1156 2SK1626 2SK1627 Hitachi DSA00396
Text: 2SK1626 , 2SK1627 Silicon N-Channel MOS FET Application High speed power switching Features , . Drain 3. Source G S 2SK1626 , 2SK1627 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1626 Ratings Unit VDSS 450 V 2SK1627 500 Gate to , +150 °C Note 2 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1626 , 2SK1627 , . 3 2SK1626 , 2SK1627 Maximum Safe Operation Area 50 Power vs. Temperature Derating Drain


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PDF 2SK1626, 2SK1627 O-220FM 2SK1626 2SK1155 2SK1156 2SK1626 2SK1627 Hitachi DSA00396
2000 - 2SK1667

Abstract: DSA003639
Text: 2SK1667 Silicon N-Channel MOS FET ADE-208-1308 (Z) 1st. Edition Mar. 2001 Application High , -220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1667 Absolute Maximum , , VGS = 10 V *1 2SK1667 Maximum Safe Operation Area Power vs. Temperature Derating 100 Operation , ) 20 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 3 2SK1667 Static Drain , 2SK1667 Typical Capacitance vs. Drain Source Voltage Body to Drain Diode Reverse Recovery Time 1000


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PDF 2SK1667 ADE-208-1308 O-220AB 2SK1667 DSA003639
2000 - 2SK1669

Abstract: DSA003639
Text: 2SK1669 Silicon N-Channel MOS FET ADE-208-1310 (Z) 1st. Edition Mar. 2001 Application High , . Source 2SK1669 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to , Note 2 1. Pulse test I D = 15 A, VGS = 10 V *1 2SK1669 Maximum Safe Operation Area , (on) () Drain to Source Saturation Voltage VDS (on) (V) 2SK1669 5 Pulse Test 4 3 2 , °C 5 2 1 0.5 0.5 1 5 2 10 20 Drain Current ID (A) 50 2SK1669 Typical Capacitance


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PDF 2SK1669 ADE-208-1310 2SK1669 DSA003639
1999 - 2SK168

Abstract: transistor 2sk168 DSA003646
Text: 2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK168 Absolute Maximum Ratings (Ta = , = 100 MHz Note: 1. The 2SK168 is grouped by I DSS as follows. D E F 4 to 8 6 to 12 10 to 20 2 2SK168 Typical Output Characteristics (1) 10 300 VGS = 0 Drain , ­1.0 Gate to Source Voltage VGS (V) 0 3 2SK168 Ta = ­25°C 25°C 10 5 0 75


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PDF 2SK168 2SK168 transistor 2sk168 DSA003646
2001 - G1563

Abstract: D1563 2SK1658 C10535E VP15-00-3 NEC MARKING surface TC236
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING (Unit : mm , . © 1991 2SK1658 5 ELECTRICAL CHARACTERISTICS (T A = 25°C) CHARACTERISTICS SYMBOL TEST , ) td(on) ton tf toff Data Sheet D15638EJ2V0DS 2SK1658 TYPICAL CHARACTERISTICS (T A = 25 , 2SK1658 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss 10 Coss 1 Crss 0.1 0.2 60 ID


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PDF 2SK1658 2SK1658 G1563 D1563 C10535E VP15-00-3 NEC MARKING surface TC236
1999 - SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Text: 2SK1572 2SK1573 2SK1620 2SK1625 2SK1627 2SK1628 STD3NB50 STD2NB50 STP4NB50 STP4NB50 STP6NB50 , Replacement Nearest Preferred 2SK1636 2SK1637 2SK1667 2SK1773 2SK1807 2SK1808 2SK1809 2SK1862 , type 2SK1643 2SK2231 2SK2376 2SK2398 2SK2399 2SK2417 2SK2445 2SK2507 2SK2542 2SK2543 2SK2544


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PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
1998 - M2U Package

Abstract: No abstract text available
Text: Switching Diodes 2SK1605 MA127 Silicon epitaxial planer type For switching circuits 2.8 ­0.3 +0.2 +0.25 Unit : mm s Features q 0.65±0.15 6 1.5 ­0.05 0.65±0.15 1.9±0.1 0.95 0.95 Four-element incorporated in one package, enabling high-density mounting 2.9 ­0.05 +0.2 5 2 q q q Point-symmetrical wiring, without need of taping direction MA122 type with wiring made on the back side 1.1­0.1 4 3 s Absolute Maximum Ratings (Ta= 25°C) Parameter Reverse


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PDF 2SK1605 MA127 MA122 100mA M2U Package
1998 - Not Available

Abstract: No abstract text available
Text: Switching Diodes 2SK1609 MA132WA Silicon epitaxial planer type 0.28±0.05 For switching circuits 1.60­0.03 0.80 0.80 0.51 0.51 0.80 1.60±0.1 0.80±0.05 Unit : mm s Features q q q Small capacity between pins, Ct Extra-small SS-Mini type package with two incorporated elements, enabling high-density mounting +0.05 Short reverse recovery period t rr 1 3 2 0.28±0.05 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive


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PDF 2SK1609 MA132WA
1998 - IR 30 D1

Abstract: No abstract text available
Text: Switching Diodes 2SK1609 MA153, MA153A Silicon epitaxial planer type For switching circuits 0.65±0.15 Unit : mm 2.8 ­0.3 +0.2 1.5 ­0.05 +0.25 0.65±0.15 s Features 0.95 2.9 ­0.05 0.95 q 2 1.1 ­0.1 Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature MA153 MA153A MA153 MA153A Single Series Single Series VR VRM IF IFM IFSM Tj Tstg 40 80 40 80 100 65 200 130 150 ­ 55 to +150 V V mA mA °C °C 2 1


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PDF 2SK1609 MA153, MA153A MA153 MA153A O-236 SC-59 IR 30 D1
1998 - Not Available

Abstract: No abstract text available
Text: Switching Diodes 2SK1605 MA174 Silicon planer type For small power rectification and surge absorption 0.65±0.15 Unit : mm 2.8 ­0.3 +0.2 +0.25 1.5 ­0.05 0.65±0.15 0.5R 2.9 ­0.05 0.95 q Independent incorporating of two elements, enabling high-density mounting 1.9±0.2 +0.2 4 1 0.95 0.5 0.4 ­0.05 +0.1 q High voltage resistance (VR : 200V), enabling rectification 2 3 0.2 1.1 ­0.1 +0.2 s Absolute Maximum Ratings (Ta= 25°C) Parameter Reverse voltage


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PDF 2SK1605 MA174
1998 - MA175WA

Abstract: Ma175
Text: Switching Diodes 2SK1606 MA175WA , MA176WA Silicon epitaxial planer type For switching circuits s Features q q 4.0±0.2 3.0±0.2 Unit : mm Small capacity between pins, Ct 0.7±0.1 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current Junction temperature Storage temperature * t=1s Symbol MA175WA MA176WA MA175WA MA176WA Single Double Single Double Single Double VR VRM IF IFM IFSM * Tj Tstg Rating 40 80 40


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PDF 2SK1606 MA175WA MA176WA MA175WA MA176WA Ma175
1998 - Not Available

Abstract: No abstract text available
Text: Schottky Barrier Diodes (SBD) 2SK1606 MA745 Silicon epitaxial planer type For the switching circuit 0.425 Unit : mm 2.1±0.1 1.25±0.1 0.425 s Features 2.0±0.2 1.3±0.1 0.65 0.65 q Low forward rise voltage VF, optimum for low-voltage rectification (Low VF type of MA704A) Fast reverse recovery time trr, optimum for high-frequency rectification 1 3 2 q s Absolute Maximum Ratings (Ta= 25°C) Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current


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PDF 2SK1606 MA745 MA704A) SC-70
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