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2SK1365 Toshiba America Electronic Components Bristol Electronics 3 $5.04 $5.04
2SK1365(F) Toshiba America Electronic Components Chip1Stop 388 $27.60 $21.00
2SK1365F Toshiba America Electronic Components ComS.I.T. 1,500 - -
2SK1365F Toshiba America Electronic Components Chip One Exchange 240 - -

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2SK1365 datasheet (8)

Part Manufacturer Description Type PDF
2SK1365 Toshiba TRANS MOSFET N-CH 1000V 7A 3(2-16F1B) Original PDF
2SK1365 Toshiba Power MOSFETs Cross Reference Guide Original PDF
2SK1365 Toshiba N-Channel MOSFET Original PDF
2SK1365 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SK1365 Toshiba Original PDF
2SK1365 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, switching power supply applications Scan PDF
2SK1365 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (pi-MOSII.5) Scan PDF
2SK1365(F) Toshiba 2SK1365 - MOSFET N-CH 1KV 7A 2-16F1B Original PDF

2SK1365 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
k1365

Abstract: 2SK1365 416W
Text: 2SK1365 .5 NMOS (-MOS ) 2SK1365 : mm : RDS ( ON ) = 1.5 () : |Yfs| = 4.0S () : IDSS = 300A () (VDS = 800 V) : Vth = 1.53.5 V (VDS = 10 VID = 1 mA) (Ta = 25 , 2SK1365 (Ta = 25°C) IGSS , 2006-11-09 2SK1365 3 2006-11-09 2SK1365 4 2006-11-09 2SK1365 5 2006-11-09 2SK1365 20070701-JA · · " " · · · RoHS RoHS · 6


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PDF 2SK1365 2-16F1B 2006-11toff VDD400 K1365 k1365 2SK1365 416W
2004 - k1365

Abstract: 2SK1365
Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ , device. Please handle with caution. 1 2004-07-06 2SK1365 Electrical Characteristics (Ta = 25 , lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK1365 3 2004-07-06 2SK1365 4 2004-07-06 2SK1365 5 2004-07-06 2SK1365 RESTRICTIONS ON PRODUCT USE


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PDF 2SK1365 k1365 2SK1365
2006 - k1365

Abstract: No abstract text available
Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications z Low drain-source ON resistance z High forward transfer admittance , 2006-11-09 2SK1365 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain , No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SK1365 3 2006-11-09 2SK1365 4 2006-11-09 2SK1365 5 2006-11-09 2SK1365


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PDF 2SK1365 2-16F1B k1365
2007 - K1365

Abstract: 2SK1365 K136
Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ , caution. 1 2006-11-09 2SK1365 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , lead (Pb)-free finish. 2 2006-11-09 2SK1365 3 2006-11-09 2SK1365 4 2006-11-09 2SK1365 5 2006-11-09 2SK1365 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information


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PDF 2SK1365 K1365 2SK1365 K136
2002 - K1365

Abstract: 2SK1365
Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm l Low drain-source ON resistance : RDS (ON) = 1.5 , is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK1365 , 2002-09-02 2SK1365 3 2002-09-02 2SK1365 4 2002-09-02 2SK1365 5 2002-09-02 2SK1365 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 2SK1365 K1365 2SK1365
diode U1J

Abstract: 2SK1365
Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSII5) 2SK1365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS • Low , 2SK1365 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. typ. MAX , Christian Era) 1998-07-24 2/5 TOSHIBA 2SK1365 id - VDS id - VDS COMMON SOURCE Tc = 25°C 15 y Xà , 2SK1365 RDS(ON) - Te IDR - VDS £ °o M w o g iD« O W COMMON SOURCE vGS=iov


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PDF 2SK1365 -l-50 diode U1J 2SK1365
2009 - k1365

Abstract: 2SK1365
Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ , device. Please handle with caution. 1 2009-09-29 2SK1365 Electrical Characteristics (Ta = 25 , 2009-09-29 2SK1365 3 2009-09-29 2SK1365 4 2009-09-29 2SK1365 5 2009-09-29 2SK1365 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates


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PDF 2SK1365 k1365 2SK1365
Not Available

Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR 2SK1365 SILICON N CHANNEL MOS TYPE DATA TO SH IBA TECHNICAL ( tt- M O S II .5) ( 2SK1365 ) HIGH SPEED, HIGH CURRENT SWITCHING , - 7 - 2 8 _ T O S H IB A C O RPO RA TIO N SEM ICONDUCTOR TO SH IBA 2SK1365 DATA TECHNICAL ( 2SK1365 ) ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage , 2SK1365 - 2* 1 9 9 4 -7 -2 8 T O S H IB A C O RPO RA TIO N


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PDF 2SK1365 2SK1365) VDD-400V, 2SK1365
2002 - k1365

Abstract: k136 2SK1365
Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1365 Switching Power Supply Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ , electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK1365 Electrical , (starting from alphabet A) Year (last number of the christian era) 2 2002-09-02 2SK1365 3 2002-09-02 2SK1365 4 2002-09-02 2SK1365 5 2002-09-02 2SK1365 RESTRICTIONS ON


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PDF 2SK1365 k1365 k136 2SK1365
2002 - k1365

Abstract: No abstract text available
Text: 2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) .5 2SK1365 Switching Power Supply Applications Low drain-source ON resistance High forward transfer admittance : RDS , an electrostatic sensitive device. Please handle with caution. 1 2002-06-05 2SK1365 , (last number of the christian era) 2 2002-06-05 2SK1365 3 2002-06-05 2SK1365 4 2002-06-05 2SK1365 5 2002-06-05 2SK1365 RESTRICTIONS ON PRODUCT USE 000707EAA ·


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PDF 2SK1365 2-16F1B k1365
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt- M O S II5 , ch a n g e w it h o u t n otice. 1998 07-24 - 1/5 TOSHIBA 2SK1365 ELECTRICAL , Era) - TOSHIBA 2SK1365 id - vos id - vos < < a a ÉH ÉH z , TOSHIBA 2SK1365 IDR - Vd S Rd s (ON) - Te H U z < H t/3 os Q E h z w tí tà , ) CASE TEMPERATURE Te (°C) 1998 07-24 - 4/5 TOSHIBA 2SK1365 rth — tw PULSE WIDTH


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PDF 2SK1365
2SK1365

Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type (-MOS II.5) High Speed, High Current Switching Applications Features · Low Drain-Source ON Resistance - RDS(ON) = 1.5 (Typ.) · High Forward Transfer Admittance - Yfs = 4.0S (Typ.) · Low Leakage Current - IDSS = -300µA (Max.) @ VDS = 800V · Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS , caution. TOSHIBA CORPORATION 1/2 2SK1365 Electrical Characteristics (Ta = 25°C) CHARACTERISTIC


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PDF 2SK1365 2SK1365
k1365

Abstract: toshiba l40 2SK1365
Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSII.5) 2SK1365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS • Low , /5 TOSHIBA 2SK1365 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , Christian Era) 1997-12-11 2/5 TOSHIBA 2SK1365 ID - vds id - vds COMMON SOURCE Tc = 25°C is y , 2SK1365 RDS(ON) - Te IDR - VDS °o M w o o W COMMON SOURCE vGS=iov


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PDF 2SK1365 k1365 toshiba l40 2SK1365
k1365

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-M OSII .5) 2SK1365 2 , contained herein is subject to change witnout notice. 1997 12-11 1/5 - TOSHIBA 2SK1365 , 2SK1365 id - vds id - vds DRAIN-SOURCE VOLTAGE V pg (V) DRAIN-SOURCE VOLTAGE VDS , (A) 1997 12-11 3/5 - TOSHIBA 2SK1365 Rds (ON) - Te iDR - vds o £ s U 3 l<3 c , TEMPERATURE Tc CC) 1997 12-11 4/5 - TOSHIBA 2SK1365 rth -W PULSE WIDTH tw (s) 100 SAFE


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PDF 2SK1365 300/uA k1365
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSII .5) 2SK1365 , # 1997 12-11 - 1/5 TOSHIBA 2SK1365 ELECTRICAL CHARACTERISTICS (Ta = 25 , ) 1997 12-11 - 2/5 TOSHIBA 2SK1365 id - vds id - vds < Q H £ Di Di , (V) 24 1997 12-11 - 3/5 TOSHIBA 2SK1365 R d s (o n ) - Te w o IDR - VDS c¿ Q , O z s Q o w a Pi 1997 12-11 - 4/5 TOSHIBA 2SK1365 rth - tw PULSE WIDTH tw (s


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PDF 2SK1365
800v nmos

Abstract: No abstract text available
Text: TOSHIBA 2SK1365 Field Effect Transistor Silicon N Channel MOS Type (n-MOS 11.5) High Speed, High Current Switching Applications Features · Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) · High Forward Transfer Admittance - Yfs' = 4. OS (Typ.) · Low Leakage Current - IDSS = -300|jA (Max.) @ VDS = 800V · Enhancement-Mode - Vth = 1.5 - 3.5V @ VDS = -10V, lD = 1mA Unit in mm Absolute , AMERICA ELECTRONIC COMPONENTS, INC. 265 2SK1365 Electrical Characteristics (Ta = 25 C


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PDF 2SK1365 800v nmos
K1118

Abstract: k1118 transistor MOSFET transistor k1118 transistor k1118 2SK1603 2SK1723 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
Text: ] 2SK1363(1.4] A 2SK2078[1.2] A 2SK1358(1.4] A , 2SK1365 (1.8] 2S K 1120(1.8] 2SK2038[2.2] 2SK1362(2.5] · A


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PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1723 2SK1769 2SK1603 2SK1356 2SK1767 2SK1913 K1118 k1118 transistor MOSFET transistor k1118 transistor k1118 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
2SK2056

Abstract: 2SK1603 2SK1358 2SK1601 2sk2039 2SK1692 2sk231 2sk2077 2SK2222
Text: 2SK1358 2SK1119 2SK1930 2SK1359 2SK1365 2SK1120 2SK1489 < 0 (A) 5 2.8 3 3 4 5 5 5 7 7 9 8.5 2.5 3 5 5 5 5


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PDF 2SK2274 2SK1602 2SK1600 2SK1858 2SK2056 2SK2089 2SK2038 2SK2222 2SK2077 2SK2319 2SK2056 2SK1603 2SK1358 2SK1601 2sk2039 2SK1692 2sk231 2sk2077
transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 2sk16 MOSFET 2SK1358 Transistor Guide toshiba transistor smd code 2sk1358 2SK2038
Text: 2SK2038[2.2] A 2SK1362[2.5] · A 2SK1119[3.8] 2SK1359[3.8] 2SK1365 [1.8] 2SK1120[1.8] A 9 TO


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PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 2sk16 MOSFET 2SK1358 Transistor Guide toshiba transistor smd code 2sk1358 2SK2038
2SJ239

Abstract: 2SK2030 2SJ201Y 2sk1 2SK2200TP 2sk1544 2SK2057 2SJ201-Y 2SK1079 2SJ238
Text: MOSFET Characteristic Chart M axim u m R ating Type No. P ackag e Id |Am ps| V oss R d s (ON) TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n [Volts] Pd [W atts] 2SJ147 2SJ201-Y 2SJ238(TE12L) 2SJ239 2SJ239(LB) 2SJ240 2SJ241(SM) 2SJ312(SM) 2SK1078(TE12L) 2SK1079(TE12L) 2SK1112(LB,STA1) 2SK1113 2SK1118 2SK1119 2SK1120 2SK1345 2SK1346 2SK1348 2SK1356 2SK1358 2SK1359 2SK1362 2SK1363 2SK1365 2SK1380 2SK1488 2SK1489 2SK1530-Y 2SK1531 2SK1544 2SK1641 2SK1653


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PDF 2SJ147 2SJ201-Y 2SJ238 TE12L) 2SJ239 2SJ240 2SJ241 2SJ312 2SK1078 2SK2030 2SJ201Y 2sk1 2SK2200TP 2sk1544 2SK2057 2SK1079
ixfh26n60q

Abstract: 2SK2333 BUZ345 IRF1405 2SK2761 BSS89 irfp250n irfp260n P9NB60 2sk2671
Text: ,9 135 T0220 STW5NB90 900 5 2,5 160 T0247 STW8NB90 900 8 1,45 200 T0247 2SK1365 1000 7 1,8 90


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PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 BUZ345 IRF1405 2SK2761 BSS89 irfp250n irfp260n P9NB60 2sk2671
sot23 BS170

Abstract: 2SK2671 rfp40n IXFN27N80 IRFL014N irf6348 P3NB60 IRF7305 STP22NE10L BSN304
Text: 30 0,025 2 S08 2SK1365 7 1000 1,8 90 T03P-IS IXFM7N80 7 800 1,4 180 T0204AA SI9410DY 7 30 0,03 2,5


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PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 rfp40n IXFN27N80 IRFL014N irf6348 P3NB60 IRF7305 STP22NE10L
2sk3625

Abstract: 2SK3566 equivalent 2SK3868 2sj618 NTPCA8008-H 2SK3878 2SK2611 2sk 2sj complementary mosfet MOSFET TOSHIBA 2SK2917 TPC8107
Text: ) 2SK3742 (2.5) 2SK1359 (3.8) 2SK2749 (2.0) 2SK1365 (1.8) 2SK2606 (1.2) 2SK2274 (1.7 , ) 3 3.8 10 2 60 2SK1365 1000 7 90 TO-3P (N) IS 1.5


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2sj618 NTPCA8008-H 2SK3878 2SK2611 2sk 2sj complementary mosfet MOSFET TOSHIBA 2SK2917 TPC8107
2007 - TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Text: ) TK07H90A(2.0) 2SK1365 (1.8) 2SK2606(1.2) 2SK2847(1.4) 2SK3799(1.3) 2SK2613(1.7) 2SK3667(1.0


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PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK2013 2SK3869 toshiba POWER MOS FET 2sj 2sk 2SK3567 equivalent 2SK2718 2SK3868
Text: ) 2SK3763 (4.3) 2SK3342 (1.0) 5 2SJ512 (1.25) 2SK1359 (3.8) 2SK2749 (2.0) 2SK1365 (1.8 , ) 3 3.8 10 2 60 2SK1365 1000 7 90 TO-3P (N) IS 1.5


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK2013 2SK3869 toshiba POWER MOS FET 2sj 2sk 2SK3567 equivalent 2SK2718 2SK3868
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