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2SK1341 Hitachi Ltd Bristol Electronics 24 - -
2SK1341-E Renesas Electronics Corporation Chip1Stop 100 $13.60 $10.20

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2SK1341 datasheet (12)

Part Manufacturer Description Type PDF
2SK1341 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
2SK1341 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1341 Renesas Technology Silicon N Channel MOS FET Original PDF
2SK1341 Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK1341 Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SK1341 Others Shortform Datasheet & Cross References Data Scan PDF
2SK1341 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1341 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1341 Others Scan PDF
2SK1341 Others FET Data Book Scan PDF
2SK1341-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 6A TO-3P Original PDF
2SK1341-E Renesas Technology Silicon N Channel MOS FET Original PDF

2SK1341 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 2SK1341

Abstract: PE-50 DSA003721
Text: 2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features · · · , 2. Drain (Flange) 3. Source 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , . PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1341 Electrical Characteristics (Ta = , . Pulse test 3 2SK1341 Power vs. Temperature Derating Maximum Safe Operation Area 50 10 ea , RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) 2SK1341 20 Pulse Test 16 ID =


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PDF 2SK1341 2SK1341 PE-50 DSA003721
2005 - 2SK1341-E

Abstract: 2SK1341 PRSS0004ZE-A SC-65
Text: 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1341-E Quantity 500 , 2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous: ADE-208-1278) Rev.2.00 Sep 07 , (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1341 Absolute , , VGS = 0, diF/dt = 100 A/µs 2SK1341 Main Characteristics Power vs. Temperature Derating , State Resistance RDS (on) () 2SK1341 10 VGS = 10 V Pulse Test 8 6 2A ID = 5 A 4 1A


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PDF 2SK1341 REJ03G0938-0200 ADE-208-1278) PRSS0004ZE-A 2SK1341-E 2SK1341 PRSS0004ZE-A SC-65
1999 - Hitachi DSA00279

Abstract: 2sk1341
Text: 2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item , 900 ±30 6 15 6 100 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1341 Electrical , 2SK1341 4 2SK1341 5 2SK1341 6 2SK1341 When using this document, keep the following


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PDF 2SK1341 Hitachi DSA00279 2sk1341
1999 - Hitachi DSA002757

Abstract: No abstract text available
Text: 2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features · · · · , switching regulator and DC-DC converter Outline 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item , 900 ±30 6 15 6 100 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1341 Electrical , : 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1341 4 2SK1341 5 2SK1341 6 2SK1341 When using this document, keep the following in


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PDF 2SK1341 Hitachi DSA002757
2000 - 2SK1341

Abstract: DSA003639
Text: 2SK1341 Silicon N-Channel MOS FET ADE-208-1278 (Z) 1st. Edition Mar. 2001 Application High , -3P D 1 G 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK1341 Absolute Maximum , Tstg ­55 to +150 °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1341 , . Pulse test 3 2SK1341 Power vs. Temperature Derating Maximum Safe Operation Area 50 10 ea , RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) 2SK1341 20 Pulse Test 16 ID =


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PDF 2SK1341 ADE-208-1278 2SK1341 DSA003639
2SK1341

Abstract: No abstract text available
Text: 2SK1341 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features , (Flange) 3. Source 375 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , W °C °C Id ID(pulse) *' IDR Pch*2 Tch Tstg HITACHI 376 2SK1341 Electrical , /dt = 100 A/n-S HITACHI 377 2SK1341 Power vs. Temperature Derating (W) Channel Dissipation , Voltage VGS (V) HITACHI 378 2SK1341 >~ Drain to Source Saturation Voltage vs. Gate to Source


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PDF 2SK1341 2SK1341
1997 - Hitachi DSA002713

Abstract: No abstract text available
Text: 2SK1341 Silicon N-Channel MOS FET November 1996 Application High speed power switching , (Flange) 3. Source S 2SK1341 Absolute Maximum Ratings (Ta = 25GC) Item Drain to source voltage , r30 6 15 6 100 150 ­55 to +150 qC qC 2 2SK1341 Electrical Characteristics (Ta = 25GC , , RL = 10 : IF = 6 A, VGS = 0 IF = 6 A, VGS = 0, diF/dt = 100 A/Ps 3 2SK1341 Power vs , 2 75°C Ta = 25°C 1 ­25°C 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1341 Drain


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PDF 2SK1341 Hitachi DSA002713
1999 - Hitachi DSA002779

Abstract: No abstract text available
Text: 2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features · · · · , S 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source , V V A A A W °C °C 2 2SK1341 Electrical Characteristics (Ta = 25°C) Item Drain to source , Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1341 Power vs. Temperature Derating 150 Channel , 10 Gate to Source Voltage VGS (V) 4 2SK1341 Drain to Source Saturation Voltage VDS (on) (V


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PDF 2SK1341 D-85622 Hitachi DSA002779
Not Available

Abstract: No abstract text available
Text: 2SK1341 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power , Outline 2SK1341 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Gate to source voltage ^G , Note f = 1 MHz 1. Pulse test HITACHI 3 2SK1341 HITACHI 4 2SK1341 HITACHI 5 2SK1341 Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Tim e , Gate Charge Qg (nc) Drain Current lD (A) HITACHI 6 2SK1341 Reverse Drain Current vs. 0


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PDF 2SK1341 -SK1341
2000 - 2SK1341

Abstract: No abstract text available
Text: products contained therein. 2SK1341 Silicon N-Channel MOS FET ADE-208-1278 (Z) 1st. Edition Mar , 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source , 25°C 2 2SK1341 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max , I F = 6 A, VGS = 0, diF/dt = 100 A/µs Note: 1. Pulse test 3 2SK1341 Power vs , Saturation Voltage VDS (on) (V) 2SK1341 20 Pulse Test 16 ID = 5 A 12 8 2A 4 1A 8 20 4


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PDF
2005 - 2SK1341

Abstract: 2SK1341-E PRSS0004ZE-A SC-65
Text: 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1341-E Quantity 500 , . 2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous: ADE-208-1278) Rev.2.00 Sep 07, 2005 , . Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1341 Absolute Maximum , , VGS = 0, diF/dt = 100 A/µs 2SK1341 Main Characteristics Power vs. Temperature Derating , State Resistance RDS (on) () 2SK1341 10 VGS = 10 V Pulse Test 8 6 2A ID = 5 A 4 1A


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PDF
2005 - Not Available

Abstract: No abstract text available
Text: ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1341-E Quantity 500 pcs Shipping , developed or manufactured by or for Renesas Electronics. 2SK1341 Silicon N Channel MOS FET REJ03G0938 , , 2005 page 1 of 6 2 S 3 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to , 0 IF = 6 A, VGS = 0, diF/dt = 100 A/µs 2SK1341 Main Characteristics Power vs. Temperature , Drain to Source on State Resistance RDS (on) (Ω) 2SK1341 10 VGS = 10 V Pulse Test 8 6 2A


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PDF
k1341

Abstract: 2SKI34 k134 2SK1341
Text: HITACHI 2SK1341 MAXIMUM SAFE OPERATION AREA TYPICAL OUTPUT CHARACTERISTICS 13 10 30 JOD 300 1.000 , 1 —40 0 40 «0 120 160 Cue Tcmperuiuic Tc (°C) HITACHI HITACHI 2SK1341 NORMALIZED


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PDF 2SKI34T 7c-25 2SK1341 k1341 2SKI34 k134 2SK1341
2SK695

Abstract: 2SK1401A 2SK1401 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
Text: 340 3150 2SK1339 3 80 5 7 1.9 50 105 425 2SK1340 5 3 4 3.2 85 180 740 2SK1341 900 6 , 2SK1340 2SK1204 2SK1573 2SK1341 2SK1205 2SK1770 2SK1528 2SK1342 2SK1773 Power MOSFET for


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PDF 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK695 2SK1401A 2SK1401 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
2SK1377

Abstract: 2SK1349 2SK1357 2SK1356 2SK1373 2SK1333 2SK1351 2SK1348 2sk1346 2SK1375
Text: 2SK1340 HS SHeg, DDC MOS N E 900 DSS ±30 s 5 D 100 ±10« ±25 250« 720 2 3 10 Im 2 3. 2 20 3 2SK1341 , =100ns, toff=225nstyp 1D=3A, VDD=30V 149 GDS 2SK1341 1730 310 0 10 1.6 10 4 ton=155ns, toff


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PDF 2SK1333 2SK1334 2SK1335 2SK1336 2SK1337 120nstyp 2SK1358 82nstyp 2SK1359 147ns, 2SK1377 2SK1349 2SK1357 2SK1356 2SK1373 2SK1333 2SK1351 2SK1348 2sk1346 2SK1375
2SK1778

Abstract: peh 165 2sk1299 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
Text: 340 3150 2SK1339 3 80 5 7 1.9 50 105 425 2SK1340 5 3 4 3.2 85 180 740 2SK1341 900 6 , 2SK1340 2SK1204 2SK1573 2SK1341 2SK1205 2SK1770 2SK1528 2SK1342 2SK1773 Power MOSFET for


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PDF 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1778 peh 165 2sk1299 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
1999 - 2SK1341

Abstract: 2SK1859
Text: - * Pulse Test See characteristic curves of 2SK1341 2SK1859 Power vs. Temperature Derating


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PDF 2SK1859 2SK1341 2SK1859
1998 - Hitachi DSA002781

Abstract: No abstract text available
Text: Crss td(on) tr td(off) tf VDF trr See characteristic curves of 2SK1341 3 2SK1859 4


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PDF 2SK1859 Hitachi DSA002781
flyback 200w

Abstract: 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
Text: 2SK1204 2SK1573 2SK1341 2SK1205 2SK1770 2SK1528 2SK1342 2SK1773 Power MOSFET for Switching


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
2SJ113

Abstract: 2cv1 2SK1635 2SK513 2SK1665 2SJ214 2SK1151 GN12030 2SK1153 2SK579
Text: 2SK1204 2SK1573 2SK1341 2SK1205 2SK1770 2SK1528 2SK1342 2SK1773 Power MOSFET for Switching


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ113 2cv1 2SK1635 2SK513 2SK1665 2SJ214 GN12030
HITACHI 2SK* TO-3

Abstract: 2SK1401A 2SK1401 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
Text: 340 3150 2SK1339 3 80 5 7 1.9 50 105 425 2SK1340 5 3 4 3.2 85 180 740 2SK1341 900 6


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PDF 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 HITACHI 2SK* TO-3 2SK1401A 2SK1401 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
Not Available

Abstract: No abstract text available
Text: 2SK1341 HITACHI 653 2SK1859 Maximum Safe Operation Area a o c o ra 9* w (/i c c


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PDF 2SK1859 2SK1341
2sj177

Abstract: 2sk1778 2sk1301 2SK97-2 2SK580 2SK579 2SK1153 2SK1152 2SK1151 2sj175
Text: 2SK1204 2SK1573 2SK1341 2SK1205 2SK1770 2SK1528 2SK1342 2SK1773 Power MOSFET for Switching


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sj177 2sk1778 2sk1301 2SK97-2 2sj175
2SK1778

Abstract: 2SK1776 2SK1665 2SK1094 2SJ236 2sj177 2SK580 2SJ175 2SK1153 2SK1152
Text: 2SK1204 2SK1573 2SK1341 2SK1205 2SK1770 2SK1528 2SK1342 2SK1773 Power MOSFET for Switching


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK1778 2SK1776 2SK1665 2SK1094 2SJ236 2sj177 2SJ175
2SK1778

Abstract: 2SK1776 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162 2SK1161
Text: 340 3150 2SK1339 3 80 5 7 1.9 50 105 425 2SK1340 5 3 4 3.2 85 180 740 2SK1341 900 6


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PDF 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1778 2SK1776 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162 2SK1161
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