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Renesas Electronics Corporation
2SK1215IGETL-E - Bulk (Alt: 2SK1215IGETL-E) 2SK1215IGETL-E ECAD Model
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Avnet 2SK1215IGETL-E Bulk 0 1 Weeks 1,563 - - - - $0.21277 More Info
Rochester Electronics 2SK1215IGETL-E 3,000 1 $0.26 $0.26 $0.23 $0.21 $0.21 More Info

2SK1215 datasheet (12)

Part ECAD Model Manufacturer Description Type PDF
2SK1215 2SK1215 ECAD Model Hitachi Semiconductor Silicon N Channel MOS FETs Original PDF
2SK1215 2SK1215 ECAD Model Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1215 2SK1215 ECAD Model Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK1215 2SK1215 ECAD Model Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK121-5 2SK121-5 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
2SK1215 2SK1215 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK1215 2SK1215 ECAD Model Others FET Data Book Scan PDF
2SK1215D 2SK1215D ECAD Model Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1215E 2SK1215E ECAD Model Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1215F 2SK1215F ECAD Model Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1215IGETL 2SK1215IGETL ECAD Model Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK1215IGFTL 2SK1215IGFTL ECAD Model Renesas Technology Silicon N-Channel MOS FET Original PDF

2SK1215 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - 2SK1215

Abstract: 2SK359 DSA003638
Text: 2SK1215 Silicon N-Channel MOS FET ADE-208-1176 (Z) 1st. Edition Mar. 2001 Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum , 3 dB Note: 1. The 2SK1215 is grouped by IDSS as follows. Grade D E F Mark , . 2 VDS = 10 V, VGS = 0, f = 100 MHz 2SK1215 Package Dimensions As of January, 2001 0.1 , Hitachi Code JEDEC EIAJ Mass (reference value) CMPAK - Conforms 0.006 g 3 2SK1215


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PDF 2SK1215 ADE-208-1176 2SK1215 2SK359 DSA003638
2005 - 2SK1215

Abstract: 2SK1215IGETL 2SK1215IGFTL PTSP0003ZA-A
Text: 0.2 Ordering Information Part Name 2SK1215IGETL 2SK1215IGFTL Quantity 3000 3000 Shipping , 2SK1215 Silicon N-Channel MOS FET REJ03G0813-0200 (Previous ADE-208-1176) Rev.2.00 Aug , . Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , : 1. The 2SK1215 is grouped by IDSS as follows. Grade Mark IDSS E IGE 6 to 10 Rev.2.00 Aug 10, 2005 page 2 of 5 F IGF 8 to 12 VDS = 10 V, VGS = 0, f = 100 MHz 2SK1215 Typical


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PDF 2SK1215 REJ03G0813-0200 ADE-208-1176) PTSP0003ZA-A 2SK1215 2SK1215IGETL 2SK1215IGFTL PTSP0003ZA-A
2000 - Hitachi DSA00280

Abstract: No abstract text available
Text: 2SK1215 Silicon N-Channel MOS FET ADE-208-1176 (Z) 1st. Edition Mar. 2001 Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings , , f = 100 MHz 1. The 2SK1215 is grouped by IDSS as follows. See characteristic curves of 2SK359. 2 2SK1215 Package Dimensions As of January, 2001 Unit: mm 0.425 2.0 ± 0.2 0.1 0.3 + ­ , ) CMPAK - Conforms 0.006 g 3 2SK1215 Cautions 1. Hitachi neither warrants nor grants licenses of


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PDF 2SK1215 ADE-208-1176 6287iPi582500 6287iPi582160 Hitachi DSA00280
Not Available

Abstract: No abstract text available
Text: 2SK1215 Silicon N-Channel MOS FET HITACHI Application VHF amplifier Outline CMPAK `2 1. Gate 2. Drain 3. Source 1067 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VG S= -4 V Pch Tch Tstg Symbol V *' V DSX ^G S S Ratings 20 ±5 30 , , VG S= 0, f = 100 MHz - 3 1. The 2SK1215 is grouped by lD S Sas follows. See


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PDF 2SK1215 2SK1215
1999 - Hitachi DSA00279

Abstract: No abstract text available
Text: 2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VGS = ­4 V Symbol VDSX , , VGS = 0, f = 100 MHz 1. The 2SK1215 is grouped by I DSS as follows. See characteristic curves of 2SK359. 2 2SK1215 When using this document, keep the following in mind: 1. This document may


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PDF 2SK1215 Hitachi DSA00279
2000 - 2SK1215

Abstract: 2SK359
Text: products contained therein. 2SK1215 Silicon N-Channel MOS FET ADE-208-1176 (Z) 1st. Edition Mar , 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit 20 1 V Drain , NF - - 3 dB Note: 1. The 2SK1215 is grouped by IDSS as follows. Grade D , curves of 2SK359. 2 VDS = 10 V, VGS = 0, f = 100 MHz 2SK1215 Package Dimensions As of , 3 2SK1215 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi


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2005 - 2SK1215IGFTL

Abstract: 2SK1215 2SK1215IGETL PTSP0003ZA-A
Text: 0.2 Ordering Information Part Name 2SK1215IGETL 2SK1215IGFTL Quantity 3000 3000 Shipping , . 2SK1215 Silicon N-Channel MOS FET REJ03G0813-0200 (Previous ADE-208-1176) Rev.2.00 Aug , . Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , : 1. The 2SK1215 is grouped by IDSS as follows. Grade Mark IDSS E IGE 6 to 10 Rev.2.00 Aug 10, 2005 page 2 of 5 F IGF 8 to 12 VDS = 10 V, VGS = 0, f = 100 MHz 2SK1215 Typical


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PDF
2SK1215

Abstract: 2SK359
Text: 2SK1215 Silicon N channel MOS FET VHF High Frequency Amplifier Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit -­ Drain to source voltage VDSX* 20 V -­ Gate to source voltage VGSS ±5 V -­ Drain current ID 30 mA , -­ * The 2SK1215 is grouped by IDSS as follows. Grade D E F


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PDF 2SK1215 2SK1215 2SK359. 2SK359
2SK359

Abstract: 2sk1215
Text: HITACHI 2SK1215-Silicon N channel MOS FET VHF High Frequency Amplifier Table 1 Absolute Maximum Ratings (Ta = 25°C ) CMPAK Item Drain to source voltage Gate to source voltage Drain current Gate current Charnel power dissipation Channel temperature Storage temperature * Vg s = - 4 V Symbol VDSx* VGSs lp Iq Pch Tch Tstg Rating 20 ±5 30 ±1 100 150 -55 to +150 Unit V V mA 2 mA , MHz pF dB dB - 3 v DS = io V, V q S = o, - f = 100 MHz * The 2SK1215 is grouped by I


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PDF 2SK1215-----Silicon 2SK1215 2SK359. 2SK359
2005 - Not Available

Abstract: No abstract text available
Text: Ordering Information Part Name 2SK1215IGETL 2SK1215IGFTL Quantity 3000 3000 Shipping Container , developed or manufactured by or for Renesas Electronics. 2SK1215 Silicon N-Channel MOS FET REJ03G0813 , Corp. Rev.2.00 Aug 10, 2005 page 1 of 5 1. Gate 2. Drain 3. Source 2SK1215 Absolute , NF — Note: 1. The 2SK1215 is grouped by IDSS as follows. Grade Mark IDSS Typ — — â , , VGS = 0, f = 100 MHz 2SK1215 Typical Output Characteristics 10 VGS = 0 V Drain Current ID


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PDF
1999 - transistor mark ige

Abstract: 2SK1215 2SK359 DSA003761
Text: 2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit 20 1 V Drain to source voltage VDSX* Gate to source voltage VGSS ±5 V Drain current ID 30 mA Gate current IG ±1 mA Channel power , 24 - - dB Noise figure NF - - 3 dB Note: 1. The 2SK1215 is


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PDF 2SK1215 transistor mark ige 2SK1215 2SK359 DSA003761
transistor C5080

Abstract: transistor 2SC458 Transistor 2SA 2SB 2SC 2SD C5247 transistor 2sc1515 C5246 transistor f 20 nf 2SC1755A C4965 A1052
Text: 2SC2512 2SC2471 2SC1906 2SC2733 2SC2736 2SC2735 2SC3793 2SC2735 2SC4680 2SC4964 2SC4965 2SK1215 2SC4265 , 2SC2776 2SC2735 Note (3SK228) (3SK194) 2SK359 2SK1215 Built in cascade circuit type Built in cascade , 2SK1215 V V (2SK2685) 3SK186 3SK194 3SK228 (3SK239A) (3SK290) 3SK295 3SK297 3SK300 (3SK309


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PDF 3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 Transistor 2SA 2SB 2SC 2SD C5247 transistor 2sc1515 C5246 transistor f 20 nf 2SC1755A C4965 A1052
2SK2752

Abstract: 2sk1326 3SK234 3SK229 3SK238 3SK197 2SK431 2SK190 2SK187 3SK154
Text: 26 1.3 0.2 2SK439 2SK522 TO -92 2SK55 2SK168 2SK359 CMPAK 2SK1215 CMPAK-4 28K2113* 2SC2685* 3SK237


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PDF 2SC46 2SK1070 2SK1326 2SK1479 2SK2752* 2SK2752 3SK234 3SK229 3SK238 3SK197 2SK431 2SK190 2SK187 3SK154
2SK1227

Abstract: 2sk1210 2SK1213 2SK1217 2SK1229 2SK1222 2SK1239 60Ghz 2SK120 2SK1203
Text: GDS 2SK1214 2.5 0.03 0 10 3 100M PG=24dBmin f=100MHz CMPAK GDS 2SK1215 3.9 5 268


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PDF 2SK1203 2SK1204 2SK1205 2SK1206 2SK1211 2SK1230 115nstyp 2SK1231 2SK1232 2SK1227 2sk1210 2SK1213 2SK1217 2SK1229 2SK1222 2SK1239 60Ghz 2SK120
2000 - 74ls111

Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
Text: 2SK322 2SK435 2SK494 Transistors\Small Signal FETs\High Frequency Amplifier 2SK1215 2SK168 2SK217


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PDF Switchin2SC3512 2SC3513 2SC3793 2SC3867 2SC4126 2SC4196 2SC4197 2SC4260 2SC4261 2SC4262 74ls111 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
2002 - lvc16244

Abstract: BC240 CBT1G125 2sk3174 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: General Purpose 2SK1070 2SK435 2SK494 Small Signal FETs High Frequency Amplifier 2SK1215 2SK168 2SK217


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PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 CBT1G125 2sk3174 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
2SC5146

Abstract: TRANSISTOR 2SA Transistor 2SD 2SK type 2sb74 2SC2546 2sc458lg 2sb647 2sd667 2sb darlington 2SC2545, 2SC2546 2SC2547
Text: kHz 5 100 900 100 100 10 3 5 10 - 2SK1215 20 CMPAK-4 2SK2685 6 MPAK 2SK217 2SK322 2SK360 2SK980


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PDF 2SA1337 2SA1350 2SA1374 2SA1390 2SA673 2SA673A 2SC5146 TRANSISTOR 2SA Transistor 2SD 2SK type 2sb74 2SC2546 2sc458lg 2sb647 2sd667 2sb darlington 2SC2545, 2SC2546 2SC2547
2001 - 7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
Text: High Frequency Amplifier 2sk1215 2sk2685 2sk359 2sk360 2sk439 2sk522 3sk295 3sk296 3sk297 3sk298 3sk300


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PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: . 2SK439 2SK168 2SK359 2SK1215 2SK2685 3SK296 3SK298 3SK309 3SK317 3SK318 BB101C BB102C BB301C


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PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
Text: 2SK1215 3SK318 BB501C BB502C BB503C BIC702C BB101C BB301C BB504C BIC703C 3SK296 3SK298 BB304C


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PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: CMPAK-4 Type No. 2SK1215 3SK318 BB501C BB502C BB503C BIC702C BB101C BB301C BB504C BIC703C


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PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
2007 - rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 rjk5020 RJP3065 4008ZB
Text: Amplification (Small Signal MOS FET) Package CMPAK CMPAK-4 Part No. 2SK1215 3SK318 3SK324 BB501C


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PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 rjk5020 RJP3065 4008ZB
rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: No file text available


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PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
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