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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2SK1215IGE(TL-E) Renesas Electronics Corporation Chip1Stop 750 $3.24 $2.64
2SK1215IGETL-E Renesas Electronics Corporation Rochester Electronics 3,000 $0.29 $0.24
FM17W2S-K121 FCT electronic RS Components 440 £6.92 £4.84
FM27W2S-K121 FCT electronic RS Components 38 £11.34 £7.92
FM7W2S-K121 FCT electronic RS Components 2,022 £3.28 £2.30

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2SK121 datasheet (62)

Part Manufacturer Description Type PDF
2SK121 Others Basic Transistor and Cross Reference Specification Scan PDF
2SK121 Others Shortform Transistor PDF Datasheet Scan PDF
2SK121 Others Shortform Datasheet & Cross References Data Scan PDF
2SK121 Others Scan PDF
2SK121 Others FET Data Book Scan PDF
2SK121 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SK121 Sony Silicon N-Channel Junction FET Scan PDF
2SK121 Sony Silicon N Channel Junction FET Scan PDF
2SK1211 Collmer Semiconductor MOSFET Transistors Scan PDF
2SK121-1 Others Shortform Datasheet & Cross References Data Scan PDF
2SK1211 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK1211 Others FET Data Book Scan PDF
2SK1211-01 Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
2SK1211-01 Collmer Semiconductor MOSFET Transistors Scan PDF
2SK1212 Collmer Semiconductor MOSFET Transistors Scan PDF
2SK121-2 Others Shortform Datasheet & Cross References Data Scan PDF
2SK1212 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK1212 Others Scan PDF
2SK1212 Others FET Data Book Scan PDF
2SK1212-01 Collmer Semiconductor MOSFET Selection Guide Scan PDF

2SK121 Datasheets Context Search

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2SK121

Abstract: 100N E303
Text: Description The 2SK121 is a junction type FET w h ic h h as th e feature o f o b ta in in g h ig h v o lta g , ack ag e O u tlin e 2SK121 -T 'g T 'Z S U n it mm < Application For lo w fre q u en cy, lo w , 0 to + 120 V V mA mA mW °C °C Po Tj T stg - 114 - SONY CORP/COMPONENT 2SK121 , PRODS lflE D 0302303 00G210Ö fl 2SK121 SONY® T-29-25 Drain Current vs , D 0302303 0QO21CH T 2SK121 SO N Y« T-29-25 Noise Figure vs. Frequency / -


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PDF 23fl3 2SK121 2SK121 100N E303
2SK121

Abstract: K 2925 2SK121 equivalent 100MHz high-frequency generator sony t
Text: /COMPONENT PRODS 1ÖE D ■0302303 QOOaiO? t, ■2SK121_SONY» T-29-25 « Electrical Characteristics , SONY CORP/COMPONENT PRODS l&Z D ■&3&E3&3 GOGZlOb 4 M ■SONY» 2SK121 Silicon N-Channel , 115 - SONY CORP/COMPONENT PRODS 1ÛE D Ö3Ö23Ö3 0002100 fl 2SK121 SONY® T-29-25 10 O I Q , ) - 116 - SONY CORP/COMPONENT PRODS IflE D 6332353 00021CH T 2SK121 SONY« T-29-25 20 10 Noise , ) 100JJ I - 117 - SONY CORP/CONPONENT PRODS 1ÔE D Ô3â53fl3 OOOE11G b 2SK121 SONY» IOO Drain


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PDF 2SK121 T-29-25 2SK121 K 2925 2SK121 equivalent 100MHz high-frequency generator sony t
2SK121

Abstract: Audio T R-10kn
Text:  2SK121 Silicon N-Channel Junction FET SONY, • Low Notse. High Gm • Preamplifiers for Audio. Video • Switchings Absolute Maximum Ratings Ta«25"C Characteristics Symbol 2SK121 Drain*to-Gate Voltage Vooo 30V Source-to-Gate Voltage Vsco 50 V Dram Current •o 20 mA Gate Current >o 5 mA Power Dissipation P 300 m W Junction Temperature T, 100*C Storage Température T.,0 -50-+120 C I « - » LU mt ttf ir iT AMC Electrical Ch arac ten s ti es Ta*25*C Characteristics CxiviKAI


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PDF 2SK121 Vos-10V. Io-30mA 100MHz -10kn 2SK121 Audio T R-10kn
FET 2SK125

Abstract: FET 2SK109 2SK109 2SK97 2SK105 2SK104 2sk109a 2SK120 2SK107 2SK124
Text: - 32 - m. 2SK84 2SK85 2SK87 (H) 2SK89 2SK92 2SK93 2SK94 2SK97 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK11T 2SK118 2SK119 2SK120 2SK121 2SK123 2SK124 2SK125 2SK127 2SK127A % tt ffl ÌÉ m & f ;E Y * 1 K Ä V* ^ $ fë P d/Pc h ft (A) 10 b G 100m D (W) 100m 500m 100m -lOn -3 0 Ig s s (max) (A) -lOOn Vg s (V) - 30 (min , 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK1Î2 2SK113 2SK1I7 2SK118 2SK119 2SK120 2SK121 2SK123 2SK124 2SK125


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PDF 2SK84 2SK85 2SK87 2SK89 2SK92 2SK93 2SK94 2SK97 2SK103 2SK104 FET 2SK125 FET 2SK109 2SK109 2SK105 2sk109a 2SK120 2SK107 2SK124
2010 - e304 fet

Abstract: 2SK581 Siliconix E304 2sk121 U199 PN4222 bf256s InterFET PN4304 TP5950
Text: JUNCTION FET Item Number Part Number Manufacturer V(BR)GSS IDSS (A) 9,. Min (S) Max (V) VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at (WrC) Toper Max (OC) Package Style N-Chann I JFETs, (Cont'd) 5 10 BF256B BF256LB PF51 02 2SK121 ESM4092 MFE2005 MFE2005 MPF4416 UC2149 2N4978 ~~~ts:3~3 15 PN4304 PN4304 PN4304-18 SMP4304 TMPF4304 TP4304 TP4304 UC756 20 ~~:2 25 PN4222 PN4222 SMP4222 TMPF4222 TP4222 TP4222 2N4222 2N4222A TP5950


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PDF BF256B BF256LB 2SK121 ESM4092 MFE2005 MPF4416 UC2149 2N4978 PN4304 e304 fet 2SK581 Siliconix E304 U199 PN4222 bf256s InterFET TP5950
2sk129

Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2sk122 2SK105 Datasheet 2SK109 2SK182E 2sk146 datasheet 2SK131
Text: Absolutes maximum ratings (Ta=25ºC) PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119 2SK120 2SK121 2SK122 2SK123 2SK124 2SK125 2SK126 2SK127 2SK128 2SK129 2SK130 2SK131 2SK132 2SK133 2SK134 2SK135 2SK136 2SK137 2SK137A 2SK138 2SK139 2SK140 2SK141 2SK141A mode (V) 15 GDO


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PDF 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2sk122 2SK105 Datasheet 2SK109 2SK182E 2sk146 datasheet 2SK131
2002 - transistor 2N3563

Abstract: 2SK30 2n3819 cross reference 2sk41e 2SA726 transistor 2sc1417 2SC1026 2Sa1026 2SC2259 BC150 transistor
Text: (continued) Industry Part Number 2SK113 2SK120 2SK121 2SK123 2SK125 2SK148 2SK149 2SK154 2SK155 2SK156A


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PDF
PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D V01000J Johnson motor 2 607 022 013 2SK109 equivalent DG5043CK i3-509
Text: No file text available


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PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D V01000J Johnson motor 2 607 022 013 2SK109 equivalent DG5043CK i3-509
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: No file text available


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PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: No file text available


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PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 D1N750 Q2N1132 D02CZ10 D1N751
Text: No file text available


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PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 D1N750 Q2N1132 D02CZ10 D1N751
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: No file text available


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PDF
STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: No file text available


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PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
t110 94v 0

Abstract: PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
Text: No file text available


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PDF Barcelona-28, S-171 CH-5400 t110 94v 0 PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
2SK3561 equivalent

Abstract: 2SK1603 un 1044 2SK2056 2SK2030 2SJ238 2sk1603 datasheet 2SK2039 2SK1487 2SK1078
Text: No file text available


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PDF BCE0017A 2SK3561 equivalent 2SK1603 un 1044 2SK2056 2SK2030 2SJ238 2sk1603 datasheet 2SK2039 2SK1487 2SK1078
2002 - 817B y 4-PIN

Abstract: 817AX 817a11anb 817b 2SK1213 817b 4 pin ic APPLICATION S-817A14ANB-CUD-T2 S-817A13ANB-CUC-T2 S-817A12ANB-CUB-T2 S-817
Text: , Input voltage-IO current 3. Output Voltage Adjustment Circuit Tr: 2SK1213Y , R1: 1k,VO=2V The output


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PDF S-817 SC-82AB S-817 817B y 4-PIN 817AX 817a11anb 817b 2SK1213 817b 4 pin ic APPLICATION S-817A14ANB-CUD-T2 S-817A13ANB-CUC-T2 S-817A12ANB-CUB-T2
2000 - S-817

Abstract: SEIKO 817AX 817A1 817bx 817b ic 817b S-817B15AMC-CWE-T2 817b 4 pin ic 5v to 9v voltage regulator
Text: Voltage Adjustment Circuit Tr: 2SK1213Y , R1: 1k,VO=2V The output voltage can be boosted by using the


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PDF S-817 SC-82AB SEIKO 817AX 817A1 817bx 817b ic 817b S-817B15AMC-CWE-T2 817b 4 pin ic 5v to 9v voltage regulator
Not Available

Abstract: No abstract text available
Text: – 2SK962-01 " 2SK1217-01R -■■MS rnkiMrnRmm:! I d (A) P d (W ) Characteristics (h/ a x . ) V


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PDF 2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2469-01M 2SK24tl 2SK1007-01 2SK1009-01 2SK1386-01 2SK2523-01
2SK1212-01

Abstract: DDD3015 2Sk 111
Text: 2SK1212-01 SIPMOS® FUJI POWER MOS-FET N-CH AN NEL SILICON POWER MOS-FET ■Features • High current • Low on-resistance • No secondary breakdown • Low driving power • Avalanche-proof ■Applications • DC-DC converters • Motor controllers • General purpose power amplifier F-I SERIES lOutline Drawings JEDEC EIAJ ■Max. Ratings and Characteristics ►Absolute Maximum Ratings(Tc = 25°C) I Equivalent Circuit Schematic Items Symbols Ratings Units Drain-source voltage Vdss 900 V Continuous drain


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PDF 2SK1212-01 450VV> A2-159 DDD3015 2Sk 111
ixfh26n60q

Abstract: 2SK2333 BUZ345 IRF1405 2SK2761 BSS89 irfp250n irfp260n P9NB60 2sk2671
Text: T0247 STW7NB80 800 6,5 1,9 160 T0247 STW8NB80 800 7,5 1,6 170 T0247 2SK1217 900 8 - 100 T03PF


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PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 BUZ345 IRF1405 2SK2761 BSS89 irfp250n irfp260n P9NB60 2sk2671
2005 - 2SK1215IGFTL

Abstract: 2SK1215 2SK1215IGETL PTSP0003ZA-A
Text: 0.2 Ordering Information Part Name 2SK1215IGETL 2SK1215IGFTL Quantity 3000 3000 Shipping , . 2SK1215 Silicon N-Channel MOS FET REJ03G0813-0200 (Previous ADE-208-1176) Rev.2.00 Aug , . Drain 3. Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , : 1. The 2SK1215 is grouped by IDSS as follows. Grade Mark IDSS E IGE 6 to 10 Rev.2.00 Aug 10, 2005 page 2 of 5 F IGF 8 to 12 VDS = 10 V, VGS = 0, f = 100 MHz 2SK1215 Typical


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2SK1212-01

Abstract: No abstract text available
Text:  2SK1212-01 SIPMOS® FUJI POWER MOS-FET INJ-CH AN NEL SILICON POWER MOS-FET ■Features • High current • Low on-resistance • No secondary breakdown • Low driving power • Avalanche-proof ■Applications • DC-DC converters • Motor controllers • General purpose power amplifier F-I SERIES lOutline Drawings JEDEC EIAJ ■Max. Ratings and Characteristics ►Absolute Maximum Ratings(Tc = 25°C) I Equivalent Circuit Schematic Items Symbols Ratings Units Drain-source


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PDF 2SK1212-01 10jus 100ps 100ms A2-159
2SC5146

Abstract: TRANSISTOR 2SA Transistor 2SD 2SK type 2sb74 2SC2546 2sc458lg 2sb647 2sd667 2sb darlington 2SC2545, 2SC2546 2SC2547
Text: kHz 5 100 900 100 100 10 3 5 10 - 2SK1215 20 CMPAK-4 2SK2685 6 MPAK 2SK217 2SK322 2SK360 2SK980


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PDF 2SA1337 2SA1350 2SA1374 2SA1390 2SA673 2SA673A 2SC5146 TRANSISTOR 2SA Transistor 2SD 2SK type 2sb74 2SC2546 2sc458lg 2sb647 2sd667 2sb darlington 2SC2545, 2SC2546 2SC2547
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