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2SK12/G datasheet (1)

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2SK150

Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 ic 993
Text: No file text available


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PDF 2SK15) 2SK11) 2SK12, 3800iiu 3800/tU 2SK12 3SK15 2SK12) 10kfl) 2SK150 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 ic 993
2SK30

Abstract: 2sK30 fet 2SK34 2SK19TM FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
Text: DCAF A. Chop N D -20 GDS 10» G 100» -ln -10 0. 3» 6. 5» 10 -0. 5 -6 10 JUu 10 1DSS 2SK12 JSSË DC/LF A, Chop N D -20 GDS 10m G 100m ijllil -10 0.45m 5m 10 -0. 65 -4.5 10 TIP 0. 8m 10 1DSS 2SK13 JBS DCAF A N D -12 GDS 10m G 100m -0. In -10 0.45» 5m 10 -0.65 -4. 5 10 0.1« 0. 8m 10 IDSS 2SK15 m^ DC/LF LN A N D -20 GDS 10* G 100m -0. In -10 0.45m 5m 10 -0. 65 -5 10 0.1« 0. 8m 10 IDSS 2SK16(H) BjZ Hi-Imp A N D -20 s 10m G 100m -ln -6 0. 5m 7m 6 -0. S -5 6 o.líi lu 3m 6 IDSS 2SK17


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PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 10DGS, 2SK41NP 2SK25 2SK30ATM 2SK30 2SK30 2sK30 fet 2SK34 2SK19TM FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
2SK1231

Abstract: 2SK1232 2SK12 2sk123
Text: . A B S O L U T E M A X IM U M R A T IN G S Item D rain -S o u rce Voltage G a te-S o u rc e V , G Symbol Voss Vcss Id R everse D rain C u rre n t Channel D issipation Channel T em p eratu re S to ra g e T em p eratu re Pc* ·PWSIO/», duty c y c i e i \ % ·V a lu e a t T c -25*C , Breakdown Voltage G a te-S o u rc e B reakdow n Voltage G a te-S o u rc e Leak C u rre n t Z ero G ate V oltage D rain C u rre n t G a te-S o u rc e C utoff Voltage S ta tic Drain« Source on S ta te R esistan


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PDF 2SK1231, 2SK1232 O-220FM) To-25 2SK1231 2SK1232 44Tb2Q5 Q0132bfl 2SK12 2sk123
2SK12

Abstract: 2SK128 2SK1282 2SK1282-Z A 1282 transistor MEI-1202 TEA-1035
Text: * PW â 10 /¿s, Duty Cycle (T a V V dss g SS(AC) 4. Fin (Drain) 60 ±20 ±3.0 ±12 PT2 20 V V A , ds = 10 V V gs = 0 f = 1 M Hz n n V s V g S(oH) 1.0 2.4 1yts 1 loss Igss C is s 10 , £2 tf Q g 13 3 3 0.9 140 700 V gs = 10 V Id = 3 A V dd = 48 V Isd = 3 A, V gs = 0 If = , T.U.T.f Rl Vgs -JVW-o-l P G .U l) /- -V gs Wave Form 90 % A R g Rg = 10 Q


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PDF 2SK1282 2SK1282-Z IEI-1209) 2SK12 2SK128 A 1282 transistor MEI-1202 TEA-1035
2SK68A

Abstract: 2SK44 2sK30 fet 2SK34 2SK60 FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
Text: DCAF A. Chop N D -20 GDS 10» G 100» -ln -10 0. 3» 6. 5» 10 -0. 5 -6 10 JUu 10 1DSS 2SK12 JSSË DC/LF A, Chop N D -20 GDS 10m G 100m ijllil -10 0.45m 5m 10 -0. 65 -4.5 10 TIP 0. 8m 10 1DSS 2SK13 JBS DCAF A N D -12 GDS 10m G 100m -0. In -10 0.45» 5m 10 -0.65 -4. 5 10 0.1« 0. 8m 10 IDSS 2SK15 m^ DC/LF LN A N D -20 GDS 10* G 100m -0. In -10 0.45m 5m 10 -0. 65 -5 10 0.1« 0. 8m 10 IDSS 2SK16(H) BjZ Hi-Imp A N D -20 s 10m G 100m -ln -6 0. 5m 7m 6 -0. S -5 6 o.líi lu 3m 6 IDSS 2SK17


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PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK65 2SK66 2SK1109 2SK67 2SK68A 2SK44 2sK30 fet 2SK34 2SK60 FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
2SK1229

Abstract: No abstract text available
Text: 1 .7 8 ± 0 .4 FEA TURES · Low N o ise , H igh G ain N F = 1 .0 d B typ. G a = l l d B typ. ( f = , = 2 5 ° C ) I te m D r a in to S o u r c e V o lta g e G â te to S o u r c e V o lta g e G â t e to D r a in V o lta g e D r a in C u r r e n t C h a n n e l D i s s ip a t io n C h a n n e l T e m p e r a tu r e S to r a g e T e m p e r a tu r e Sym bol V ds Vas» Vv,[>i) lu Pck Tch T stg R a t in g , 's reliability. A mbient T em p er* tu re Ta (X) l ELECTRICAL CHARACTERISTICS ! Ta =2 5 ' Cl Ite m G ate


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PDF 2SK1229 2SK1229
2SK520

Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK518 2SK519 2SK514 2sk43
Text: DCAF A. Chop N D -20 GDS 10» G 100» -ln -10 0. 3» 6. 5» 10 -0. 5 -6 10 JUu 10 1DSS 2SK12 JSSË DC/LF A, Chop N D -20 GDS 10m G 100m ijllil -10 0.45m 5m 10 -0. 65 -4.5 10 TIP 0. 8m 10 1DSS 2SK13 JBS DCAF A N D -12 GDS 10m G 100m -0. In -10 0.45» 5m 10 -0.65 -4. 5 10 0.1« 0. 8m 10 IDSS 2SK15 m^ DC/LF LN A N D -20 GDS 10* G 100m -0. In -10 0.45m 5m 10 -0. 65 -5 10 0.1« 0. 8m 10 IDSS 2SK16(H) BjZ Hi-Imp A N D -20 s 10m G 100m -ln -6 0. 5m 7m 6 -0. S -5 6 o.líi lu 3m 6 IDSS 2SK17


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PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK521 100MHZ 2SK522 20mVmax 2SK523 2SK520 2SK523 2SK508 2SK537 2sk515 2SK511 2SK518 2SK519 2SK514 2sk43
3SK38A

Abstract: 2sk1130 2SK113 FET P-Channel Switch 3SK38 2SK11 2SK15 2SK12 2SK113-Y 2SK112
Text: No file text available


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PDF 2SK11 2SK12 2SK15 10kfl 2SK112 2SK113-R 2SK113-0 60flMAX. 2SK113-Y 3SK38A 2sk1130 2SK113 FET P-Channel Switch 3SK38 2SK11 2SK15 2SK12 2SK113-Y 2SK112
2SK1202

Abstract: 2SK120 koss
Text: DC-DC Converter MHIbSQS 0013241 3Q0 HITM blE D" HITACHI / ( OPTOELECTRONICS ) ^ 16.0am ^ g 3 L Ï* 1 . G ate, 2 .D rain (Flange) 3. Source (Dimensions in ran ) S-tóíOÍ 5.t i t 02 (T , o u rc e Voltage G a te -S o u rc e Voltage D rain C u rre n t D rain Peak C u rre n t B ody-D rain Diode R ev e rse D rain C u rre n t Channel D issipation Channel T em p eratu re S to ra g e T em p , C HARACTERISTICS ( T a = 25°C ) Item D ra in -S o u rc e B raakdow n Voltage G a te -S o u rc e


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PDF 2SK1202 2SK12 2SK1202 2SK120 koss
2SK1229

Abstract: 2ROPT
Text: CHANNEL DISSIPATION CURVE ABSOLUTE MAXMUM RATING (T a = 25"C) Item D rain to S o u rc e V oltage G ate to S o u rc e V oltage G ate to D rain V oltage D ra in C u r r e n t C h an n el D is sip a tio n C h an n el T e m p e ra tu re S to r a g e T e m p e ra tu r e S ym bol Vds Vgso Vgdo Id Pch Tch Tstg R a tin g s 4 U nit V V V mA mW -3 - 3 60 160 125 -5 5 ~ 4 125 *C °c The absolute maximum , re A ss o c ia te d G ain S ym bol Ji-SS lo s s T e s t C onditio n min. 12 - 0 .3 30 9 typ


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PDF 2SK1229 12GHz) 2SK1229 2ROPT
2SK1282

Abstract: A 1282 transistor TC-2381 MEI-1202 TEA-1035
Text: (on) ^ 0.18 a Ciss (V g s - 10 V, Id = 2 A) ^ 0.24 Q ( V g s = 4 V , Id = 2 A , 10 lis. Duty Cycle Û 1 (T a V d ss V g SS(AC) Id (d o iD(pulse)* 60 +20 ±3.0 ±12 P ti P t2 , : Switching Time V gs Rl »PG.fJU 90 % Vgs (on) V gs A Rg = R g Wavs Form V dd n10


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PDF 2SK1282 1282-Z 2SK1282-Z IEI-1209) A 1282 transistor TC-2381 MEI-1202 TEA-1035
2sk82

Abstract: 2SK68A 2SK76 2sk77 datasheet 2sk97 2SK41 Equivalent FD1840 2SK44 equivalent 2SK97 2SK40
Text: No file text available


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PDF 2N3954 E-400 FD1840 250/unit 2N4392 2N4393 2SK11 2SK12 2SK13 2SK15 2sk82 2SK68A 2SK76 2sk77 datasheet 2sk97 2SK41 Equivalent FD1840 2SK44 equivalent 2SK97 2SK40
mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: 2SA312 2SA1015 2SA493 ( G ) 2SA1015 2SA58 2SA313 2SA1015 2SA493 ( G ) TM 2SA970 2SA59 2SA314 2SA1015 2SA494 2SA1015 2SA60 2SA315 2SA1015 2SA494 ( G ) 2SA1015 2SA1015 2SA495 2SA1015 2SA495 ( G ) 2SA1015 2SA65 2SA1015 2SA316 2SA66 2SA1015 2SA372 2SA67 2SA1015 2SA402 2SA1015 2SA495 ( G ) TMA 2SA1015 2SA495K 2SA1015 2SA495TM 2SA1015 2SA72 2SA429 ( G ) 2SA1091 2SA73 2SA429K


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PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: No file text available


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
2003 - TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: (sat) (V) fT (MHz) 1 L/S General-Purpose 10 F/ G General-purpose Low , (MHz) 1 L/S General-Purpose 10 F/ G General-purpose con-saturation VCE (V , 10 80 2 10 F/ G General-purpose con-saturation (V) PD (mW) : hFE <, MOS , F/ G Muting and Switch High hFE High Speed Switch General-purpose low saturation : hFE , 2SA1953 12 500 150 300~1000 2 10 0.25 200 10 F G Low sturation 5


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PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
aeg diode Si 61 L

Abstract: aeg diodes D6 BC23B SILICONIX U315 SGS Transistors 2N3750 2N339 2N3299 transistor bf 175 2N2197 GENERAL ELECTRIC
Text: Addresses CODE MANUFACTURER AEG F Fe G IR ITT J L M Mo N P R RCA S Se Sem SGS Sp STC T Tl V Vi u AEG , 07 07 08 08 AEG,ITT,NfS p fu A E G ,ITT,NfS p ,u Fe AEGfFe,M,MofN f SGS,TI,u AEGjITT.M.N, S p ,u AEG , ,SGS ,u AEG,F,N ,Sp ,u AEG,F,N,S p ,u AEG,F,N ,Sp ,u F A E G ,F ,F e ,M o , N,SGS,u AEG,F,N,Sp,u F , N , -92 00 00 09 09 09 F ,N ,S p ,u F F,N,SGS F ,N ,S G S ,Sp F,N,SGS,Sp 5 5 5 5 5 100 100 100 100 50 120 , <4.5 TO-10 TO-92 TO-92 05 06 12 A E G ,S p ,u Fe A E G ,F,Mo,N BC182A NPN Si 300 200 60 50 6


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PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 BC23B SILICONIX U315 SGS Transistors 2N3750 2N339 2N3299 transistor bf 175 2N2197 GENERAL ELECTRIC
transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook sje389 LT 8224 ZENER DIODE npn transistor RCA 467 N9602N PUT 2N6027 TFK 7 segment displays delco 466
Text: APPLICATION NOTES P U B L IS H E D B Y P A R T S C A TA L O G IN G GRO UP ( 7 8 - 5 6 7 ext 2 5 9 1 D R , listed in the NPR (Numerical Parts Record). CO ST CODE (CC COLUMN) CODE A B C D E F G H I J K L M , (Component Item Sequence portion. First used on: Ext. 2220. Copyright G 1 9 6 2 by Tafctrontx, In c . , IN IT IA L C O S T E S T . S O U R C E R A T lN G t tA=approved N *not approved , static-sensitive parts: Tek P/N 1. M I N I M I Z E H A N D L I N G Check incoming semiconductors against the list


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transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor Transistor C3246 texas ttl 74L505
Text: R TS CATALOGI N G G R O UP (78-567 e 1 2591 DR) f X INtMl7 7 ( ( 7 1 8ll1 1 CO MP A N Y , F 13C 1St G 220 40t 25 35t 50e 65C 601 J 15¢ $1 , s p ecial routi n g lists to a n no un ce new catalogs . response to th ose notices is necessary , buye r . U N NUMBERE D P AR TS AND W H AS - C hec k wit h engineeri n g bu yer o r comp o n ent , DATA SHEET OR . . . . . _ DESCRIBE PART NEEDED, ITEM ORI G INATOR - Fi ll as com


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PDF
e420 dual jfet

Abstract: MPS5010 bf320 AC digital voltmeter using 7107 cookbook for ic 555 ICL7117 VOLTMETER hall marking code A04 IH5048 e304 fet transistor SI 6822
Text: CMOS Programmable Micropower Positive Voltage R e g u la to r. ICL7665 , . 5-63 5-71 5-79 5-79 5-89 5-101 5-103 5-103 S e c tio n 6 — S p e c ia l A n a lo g AD590 2 , S e c tio n 8 — A n a lo g S w it c h e s D123 SPST 6-Channel JFET Switch Driver , Description Page S e c t i o n 8 — A n a l o g S w i t c h e s (Continued) DG141 Dual SPST 10 Ohm , Functional Table of Contents Description Page S e c t i o n 8 — A n a l o g S w i t c h e s


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2006 - MAAPGM0063-DIE

Abstract: No abstract text available
Text: 36 dBm Small Signal Gain G 25 dB Input VSWR VSWR 2.5:1 Output VSWR VSWR , mm x 174 x 3 mils) 4.138mm. G D : N G G D : N G N : G D G V D2 G N : G D 4.301mm. GND: G V GE_T N G D : G 4.428mm. 3.825mm. 2.889mm. VD1 G : D N G N : G D G G D : N G VGA_T G ND: G VGC_T VGB_T 4.100mm. 1.346mm. 0.494mm. 0.318mm. 0.166mm. 4.144mm. (169 G D : N G G D : N G G D : N G G : D G N N G D : G


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PDF MAAPGM0063-DIE RO-P-DS-3094 MAAPGM0063-Die
2004 - MAAPGM0063-DIE

Abstract: No abstract text available
Text: 36 dBm Small Signal Gain G 25 dB Input VSWR VSWR 2.3:1 Gate Supply Current , ) 4.138mm. G ND: G GND: G G ND: G VD2 G ND: G 4.301mm. GND: G VGE_T GND: G 4.428mm. 3.825mm. 2.889mm. VD1 G DNG : GND: G GND: G G DNG : GND: G G DNG : VGA_T GND: G VGC_T VGB_T 4.100mm. 1.346mm. 0.494mm. 0.318mm. 0.166mm. 4.144mm. (169 G DNG : GND: G GND: G G ND: G GND: G GND: G GND: G GND: G GND: G G DNG : GND: G GND: G G


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PDF MAAPGM0063-DIE RO-P-DS-3094 MAAPGM0063-Die
2002 - ST1534LD

Abstract: L7800cv ST1534LD-R L7900cv LF00cdt lm217*z PB137 ST3M01DTR LD1084D2M-R L4941D2T
Text: ADJUSTABLE - 32V 1.2V - ADJUSTABLE - 32V G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G 1.2V - ADJUSTABLE - 32V G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G VOUT , -220 D2PAK D2PAK (T&R) D2PAK D2PAK (T&R) D2PAK D2PAK (T&R) 1 1.5 0.5 0.15 0.1 G G G


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PDF LM138K LM238K LM338K LM150K LM250K LM350K LM123K LM223K LM323K LM323T ST1534LD L7800cv ST1534LD-R L7900cv LF00cdt lm217*z PB137 ST3M01DTR LD1084D2M-R L4941D2T
BY540

Abstract: No abstract text available
Text: 58 59 60 61 62 63 G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G G


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PDF SD-85801- BY540
1996 - CR25

Abstract: LCX007BK
Text: WID RGT VST VCK PCG DWN ENB CLR HVDD VVDD VSS SIG1( G ) SIG2(R) SIG3(B) COM LCX007BK , ( G ) Video signal ( G ) to panel 12 CLR Improvement pulse (1) for uniformity 3 SIG2 , 3.0 V10-60 2.2 2.5 2.8 R vs. G V50RG B vs. G CIE standards 2.0 60 , - 0.560 0.622 0.670 Y G Rx Y Chromaticity X Y R Unit 4 V - , x and y on the CIE standards here. Signal amplitudes (VAC) supplied to each input G input B


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PDF LCX007BK 35-inch) LCX007AK 35-inch; PIN20 CR25 LCX007BK
1996 - LCX007BKA

Abstract: CR25 8 super LCD tv circuit diagram
Text: VCK PCG DWN ENB CLR HVDD VVDD VSS SIG1 ( G ) SIG2 (R) SIG3 (B) COM LCX007BKA Block , ( G ) Video signal ( G ) to panel 12 CLR Improvement pulse (1) for uniformity 3 SIG2 , V10-60 2.2 2.5 2.8 R vs. G V50RG B vs. G CIE standards 2.0 60°C V50 , 0.560 0.622 0.670 Y G Rx Y Chromaticity X Y R Unit 4 V - ­0.10 , x and y on the CIE standards here. Signal amplitudes (VAC) supplied to each input G input B


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PDF LCX007BKA 35-inch) LCX007AKA LCX007BKA PIN20 CR25 8 super LCD tv circuit diagram
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