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Renesas Electronics Corporation
2SK1170-E Trans MOSFET N-CH 500V 20A 3-Pin TO-3P Tube (Alt: 2SK1170-E) 2SK1170-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 2SK1170-E Tube 0 26 Weeks, 2 Days 1 - - - - - Get Quote
ISC
2SK1170 TO-3PN 2SK1170 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Karl Kruse GmbH & Co KG 2SK1170 5,000 - - - - - Get Quote
ISC
2SK1178 TO-220F 2SK1178 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Karl Kruse GmbH & Co KG 2SK1178 5,000 - - - - - Get Quote
ISC
2SK1172 TO-3PN 2SK1172 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Karl Kruse GmbH & Co KG 2SK1172 5,000 - - - - - Get Quote
ISC
2SK1177 TO-220F 2SK1177 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Karl Kruse GmbH & Co KG 2SK1177 5,000 - - - - - Get Quote
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ISC
2SK1179 TO-3PF 2SK1179 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Karl Kruse GmbH & Co KG 2SK1179 5,000 - - - - - Get Quote
ISC
2SK1171 TO-3PN 2SK1171 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Karl Kruse GmbH & Co KG 2SK1171 5,000 - - - - - Get Quote
Toshiba America Electronic Components
2SK117 2-PHASE BUSBAR 2SK117 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
New Advantage Corporation 2SK117 147 147 $1.2 $1.2 $1.2 $1.2 $1.2 Buy Now

2SK117 datasheet (55)

Part ECAD Model Manufacturer Description Type PDF
2SK117 2SK117 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2SK117 2SK117 ECAD Model Others FET Data Book Scan PDF
2SK117 2SK117 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SK117 2SK117 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
2SK117 2SK117 ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF
2SK117 2SK117 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SK117 2SK117 ECAD Model Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
2SK117 2SK117 ECAD Model Toshiba N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) Scan PDF
2SK117 2SK117 ECAD Model Toshiba Junction FETs Scan PDF
2SK117 2SK117 ECAD Model Toshiba N-Channel MOSFET Scan PDF
2SK1170 2SK1170 ECAD Model Hitachi Semiconductor Mosfet Guide Original PDF
2SK1170 2SK1170 ECAD Model Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1170 2SK1170 ECAD Model Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
2SK1170 2SK1170 ECAD Model Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1170 2SK1170 ECAD Model Renesas Technology Silicon N Channel MOS FET Original PDF
2SK1170 2SK1170 ECAD Model Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK1170 2SK1170 ECAD Model Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SK1170 2SK1170 ECAD Model Others FET Data Book Scan PDF
2SK1170 2SK1170 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
2SK1170 2SK1170 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF

2SK117 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 2SK117

Abstract: 2SK117 gr TOSHIBA 2SK117 2sk1173 TRANSISTOR 2SK117
Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = -50 V · Low noise: NF = 1.0dB (typ.) · High input impedance: IGSS = -1 nA (max) (VGS = -30 V) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k) Maximum Ratings , 2003-03-25 2SK117 2 2003-03-25 2SK117 3 2003-03-25 2SK117 RESTRICTIONS ON PRODUCT


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PDF 2SK117 SC-43 2SK117 2SK117 gr TOSHIBA 2SK117 2sk1173 TRANSISTOR 2SK117
2SK117

Abstract: TOSHIBA 2SK117 TRANSISTOR 2SK117
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK117 2SK117 LO W NOISE AUDIO AM PLIFIER APPLICATIONS 5.1 MAX. Unit in mm · · · · High |Yfs| : |Yfs| = 15mS (Typ.) (VDS = 10V, VGS = 0) 0.45 0.55 MAX. 0.45 High Breakdown Voltage · VGDS= - 50V : NF = , TO SHIBA 2SK117 STATIC CHARACTERISTICS ID - V d S (LOW VOLTAGE REGION) GATE-SOURCE , without notice. 1997 04-10 2/3 - TOSHIBA 2SK117 NF - y d s NF - I d 10 15


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PDF 2SK117 2SK117 TOSHIBA 2SK117 TRANSISTOR 2SK117
2009 - 2sk117

Abstract: 2SK1173 2SK117 gr TOSHIBA 2SK117
Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = -50 V · Low noise: NF = 1.0dB (typ.) · High input impedance: IGSS = -1 nA (max) (VGS = -30 V) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k) Absolute , 2SK117 2 2007-11-01 2SK117 3 2007-11-01 2SK117 RESTRICTIONS ON PRODUCT USE ·


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PDF 2SK117 2sk117 2SK1173 2SK117 gr TOSHIBA 2SK117
2SC1815

Abstract: 2sk117 1D4B42 2SK30ATM 6D4B41 k 513 2SC185 2SC521A 2SD867 3D4B41
Text: [8] 4. 4.1 Vin = 15 V~40 V RD (FET PD ) 2SK117 RS Iz 6 mA - ID - Ta , FET 2SK117 RG 10 M COM FET 2SK117 Ta = -20~100°C 5.8 = 9 RL = - , 2 k R4 VON (15 V) 750 10 k FET 2SK117 VIN (0~10 V) R8 9&& = 9 9( = - 9 9,1 = a 9 9&7/ 9567 2SK117 × 2 = 9 VIN , VCC (7 V) FET -2 0P -1 VOUT [8] 5.10 FET 2SK117 R1 G


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PDF 2SK117 02CZ5 02CZ6 2SC1815 2SC3419 2SC521A 2SC1815 2sk117 1D4B42 2SK30ATM 6D4B41 k 513 2SC185 2SC521A 2SD867 3D4B41
2sk117

Abstract: TOSHIBA 2SK117 2SK117 gr
Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = -50 V · Low noise: NF = 1.0dB (typ.) · High input impedance: IGSS = -1 nA (max) (VGS = -30 V) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k) Maximum Ratings , 2SK117 2 2003-03-25 2SK117 3 2003-03-25 2SK117 RESTRICTIONS ON PRODUCT USE


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PDF 2SK117 SC-43 2sk117 TOSHIBA 2SK117 2SK117 gr
Not Available

Abstract: No abstract text available
Text: TO S H IBA 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS . 5.1 MAX. : |Yfs| = 15mS (Typ.) (VDS = 10V, VGS = 0) • High |Yfs| • • High Breakdown Voltage : V g d S = - 50V : NF , TO S H IBA 2SK117 STATIC CHARACTERISTICS ID - VDS (LOW VOLTAGE REGION) H 5 5 H  , 04-10 2/3 TO S H IBA 2SK117 NF - NF - Id v DS z & < DÍ Í3 U È C W 0


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PDF 2SK117
2007 - 2SK117

Abstract: 2SK117 gr TOSHIBA 2SK117
Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = -50 V · Low noise: NF = 1.0dB (typ.) · High input impedance: IGSS = -1 nA (max) (VGS = -30 V) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k) Absolute , 2SK117 2 2007-11-01 2SK117 3 2007-11-01 2SK117 RESTRICTIONS ON PRODUCT USE


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PDF 2SK117 2SK117 2SK117 gr TOSHIBA 2SK117
2SK117

Abstract: TOSHIBA 2SK117 TRANSISTOR 2SK117
Text: TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK117 2SK117 LOW NOISE AUDIO AMPLIFIER APPLICATIONS 5.1 MAX. · H igh |Yfc| : |Yfs | = 15mS (Typ.) (VDS = 10V, V g s = 0) · · H igh Breakdown Voltage Low N oise U n it in mm · VGDS= - 50V : NF = l.OdB (Typ.) (VDs = 10V , a < O H H O O 3 S3 2001 05-31 - 2SK117 TO SH IBA 2SK117 , ) AMBIENT TEMPERATURE Ta (°C) 3 2 001 05-31 - TO SH IBA 2SK117 RESTRICTIONS ON PRODUCT USE


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PDF 2SK117 2SK117 TOSHIBA 2SK117 TRANSISTOR 2SK117
2SK30A

Abstract: 2SK147 3SK101 2sk117 JFET 2SK30A 2SK30A D 2SK373 2SK170 2SK112 2sc1815
Text: (V) 2SK117 )(7 6. 9 , 9 , 6. 1 )(7 '6 ' *6 ' 9 , 026 , ; '6PD[ *6; 5.2 '6 FE (IGSX-VDS ) VDS 2SK30ATM 2SK117 2SK147 2SK170 , 20 25 VDS (V) (IG) VDG (V) 5.20 2SK117 96 IGSX-VDS 30 24 28 32 , = 1 kHz -8 10 2SK30A, 2SK117 , 2SK147 2SK30A L 2SC1815 10 -9 2SK117 RG 4kT , µ 31 2SK117 (mA) , ' ' = -0.1 -0.2 -0.3


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PDF 2SK30A 2SK147 3SK101 2sk117 JFET 2SK30A 2SK30A D 2SK373 2SK170 2SK112 2sc1815
2SK117

Abstract: 2SK117 gr
Text: T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK117 LOW NOISE AUDIO AM PLIFIER APPLICATIONS 2SK117 U nit in mm . 5.1 MAX. 0-45 0.55 M AX. 0.45 · · · · High |Yfe| High Breakdown Voltage Low Noise High Input Impedance : IYfs| = 15mS (Typ.) (VDS = 10V , /3 T O S H IB A 2SK117 STATIC CHARACTERISTICS ID - VDS (LOW VOLTAGE REGION) 1 2 , IB A 2SK117 NF - V d S CO M M O N SO U R C E I q = 0.5m A faRG = lk ii NF - Id ¡Z 0


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PDF 2SK117 2SK117 2SK117 gr
TOSHIBA 2SK117

Abstract: 2sk117
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK117 LOW NOISE AUDIO AMPLIFIER APPLICATIONS 5.1 MAX. U nit in mm High |Yfs| T T icrV i "RrpalrHnwn Vnltacrp · Low Noise |Yfs| = 15mS (Typ.) (VDS = 10V, VGS = 0) W i t \C 1 = · v jriv o _ iñ fiV - · , TOSHIBA 2SK117 STATIC CHARACTERISTICS ID - Vd S (LOW VOLTAGE REGION) GATE-SOURCE VOLTAGE , o 2SK117 UJ UJ


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PDF 2SK117 961001EAA2' TOSHIBA 2SK117 2sk117
ISS226

Abstract: ISS184 ISV128 fet 2sK161 2SK117 Low frequency amplifier ISV99 2SK30ATM 2sk241 mos fet ISS181
Text: TOSHIBA -CDISCRETE/OPTO > Sb DE | 1017ESD DDD71G3 =1X" -{ 9097250 TOSHIBA ( D I SCRETE / OPTO ) 5bC 07 103 S'f". K, - .r: - v 0 3"oCf FET Type Application Electrical characteristic (Ta = 25°C) Marking Sinni liar Type Remarks Vdsx * * Vgdo Vgrd* (V) Ig,Id* (mA) PD(itiW) loss(mA) lYfsl (mS) 2SK208 Low frequency amplifier -50 10 100 0.3 ~ 6.5 1.2 MIN. J 2SK30ATM 2SK209 Low noise low frequency amplifier -50 10 150 0.6 ~ 14 15 X 2SK117 2SK210 FM RF amplifier -18* 10 100 3.0


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PDF 1017ESD DDD71G3 2SK208 2SK30ATM 2SK209 2SK117 2SK210 2SK192A 2SK211 2SK161 ISS226 ISS184 ISV128 fet 2sK161 2SK117 Low frequency amplifier ISV99 2SK30ATM 2sk241 mos fet ISS181
ISS226

Abstract: ISV99 2sk117 ISV128 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
Text: FM R F am plifier 10 10 10 30* 15 7 TYP. 9 TYP. 10 TYP. X Y K T 2SK117 2SK 192A 2SK161


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PDF 2SK208 2SK30ATM 2SK209 2SK210 2SK211 2SK117 2SK161 2SK241 ISV128 ISS226 ISV99 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
2SC1815 2SA1015

Abstract: 2SK117 2sk389 2SC2240 2sj74 2SC4667 2sk246 2sc2458 2SC1815 2SC1923
Text: j) High Speed SW 2SK117 2SC2878 2SC3112 2SC752©TM 2SA970 2SA970 2SA950 2SA562TM 2SJ103 2SK330 2SJ105


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PDF SC-43) 2SC1923 2SC2668 SC-59) 2SC2714 SC-70) 2SC4215 2SC4915 SC-61) 3SK126 2SC1815 2SA1015 2SK117 2sk389 2SC2240 2sj74 2SC4667 2sk246 2sc2458 2SC1815
2SJ111

Abstract: 2SJ110 2sj111 fet 2SK369 2SK364 2SK363 2SK362 2SK30ATM 2SK246 2SK117
Text: > JUNCTION FET^ Type No. IDSS |Yfs| TYP. (MIN.) Crss TYP. NF MAX. Application VGDS "G Pd Vds VGS vDs VGS vds F vDs "D f Rg N-Channel P-Channel (V) (mA) (mW) (mA) (V) (V) (mS) (V) (V) (pF) (V) (MHz) 2SK117 -50 10 300 0.6-14 10 0 15 10 0 3 -10 1 2 10 0.5 1K 1 High lYfsl Low Noise 2SK170 -40 10 400 2.6-20 10 0 22 10 0 6 -10 1 2 10 1 1K 1 Analog


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PDF 2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 10rrent 2SK373 2SJ74 2SJ111 2SJ110 2sj111 fet 2SK369 2SK364 2SK363 2SK362 2SK30ATM 2SK246 2SK117
2sj111 fet

Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
Text: ufcUM o 3: a to -3 (O to cn N ro M 0 > rS W H to n 70 m -3 m \ o 13 -3 O < -r> o > JUNCTION FET < IDSS Type No. A p p lic a t io n General Purpose High lY fs l Lo w Noise High lY fs l L o w Noise A nalog SW & General Purpose (H ew ) (N EW ) (n e w ) High lY fs l Low Noise High Voltage. Constant Current & Analo g SW High lY fs l Lo w Noise A n alo g SW & General Purpose <§E[2> (N E W ) CNEVg) High lY fs l Low Noise (JMEVÜS) CS0& rKTFûA M Stvjy N-Channel 2SK30ATM 2SK117 2SK170


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PDF 2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 2SK369 2SK373 2SJ74 2sj111 fet 2SJ111 2SK30A 2SJ110
2sk170 FET

Abstract: fet to92 Junction-FET 2SK364 2SK118 2sk117 2SJ74 fet data book 2SJ14 2sk879
Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch 2SK367 Nch 2SK208 Nch 2SJ106 Pch 2SK879 Nch 2SJ144 Pch 2SK209 Nch 2SK880 Nch 2SK368 Nch 1 of 1 Polarity -50.0 1.2 50.0 -1.2 -50.0 1.2 -50.0 1.2 -40.0 5.0 -40.0 2.6 -40.0 2.6 Nch -50.0 -40.0


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PDF 2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET fet to92 Junction-FET 2SK118 2SJ74 fet data book 2SJ14 2sk879
2sj111

Abstract: 2sj110 2sj111 fet 2SK117 2SK362 2SK246 TOSHIBA 2SK362 TOSHIBA 2SK117 2sk170 FET TOSHIBA 2SK369
Text: *— 8 . , N-Channel ! S 1 to * 8 2SK117 ! o i*. T— XL 8 _i 2SK246 ! 2SK362 ; 2SK363 ; (O n


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PDF 2SK117 2SK246 2SK362 2SK363 2SK369 2sj111 2sj110 2sj111 fet 2SK117 2SK362 2SK246 TOSHIBA 2SK362 TOSHIBA 2SK117 2sk170 FET TOSHIBA 2SK369
2SK241 Equivalent FET

Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent gaas fet vhf uhf 2SK161 equivalent
Text: UN UP Equivalent other package Type No. 2SK30ATM 2SK117 2SK192A 2SK161 2SK241 2SK373 2SK982 -


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PDF OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent gaas fet vhf uhf 2SK161 equivalent
buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Text: ,05 - 0,35 T092 2SK117 50 0,005 - - T092 2SK163 50 0,001 - 0,4 T092 2SK184 50 0,014 - 0,2 T092


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PDF 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 OT103 BF996 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
3SK275

Abstract: 2sk882 transistor TT fet C439-4 FR90
Text: 15MIN Mark J X K T KH Kl KP KJ RB V KQ KS Similar Other package Type No. 2SK30ATM 2SK117 2SK161


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PDF 2SC4116 2SA1586 2SC4117 2SA1587 2SA1015 2SC1815 2SA970 2SC2240 2SC1923 2SA562TM 3SK275 2sk882 transistor TT fet C439-4 FR90
2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
Text: . * 2SK30ATM * 2SK117 * 2SK118 * 2SK161 * 2SK170 * 2SK184 *2SK192A 2SK208 2SK209 2SK210 2SK211 * 2SK241


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
2010 - 2SK117BL

Abstract: nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL 2SK523M UC240 2sk163 nec 2SK105 TO92
Text: TP3822 2N3822 2N4139 2SK514K 2SK105 2SK105 2SK68 2SK68A 2SK68A 2SK68AN 2SK68N 2SK246 2SK330 2SK117BL 2SK184 2SK117 2SK362 2SK365 2SK43 ~g 40 ~g 50 50 50 50 50 50 50 50 45 50 ~~~~~6X25


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PDF 2N3069 2N3069A NDF9406 NDF9407 NDF9408 NDF9409 NDF9410 UC240 2SK117BL nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL 2SK523M 2sk163 nec 2SK105 TO92
2sk129

Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2sk122 2SK105 Datasheet 2SK109 2SK182E 2sk146 datasheet 2SK131
Text: Absolutes maximum ratings (Ta=25ºC) PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119 2SK120 2SK121 2SK122 2SK123 2SK124 2SK125 2SK126 2SK127 2SK128 2SK129 2SK130 2SK131 2SK132 2SK133 2SK134 2SK135 2SK136 2SK137 2SK137A 2SK138 2SK139 2SK140 2SK141 2SK141A mode (V) 15 GDO


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PDF 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2sk122 2SK105 Datasheet 2SK109 2SK182E 2sk146 datasheet 2SK131
2SJ74

Abstract: 2SC3136 2SK118 2SK241 2SC1815 2SA1015 2SA1349 2SA1015 2sc2240 equivalent 2SC1815 2SJ109
Text: ~6.5 10 0 (1.2) 10 0 General Purpose 2SK117 -50 10 300 1.2~14 10


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PDF SC-43) 2SC1815 2SA1015 2SC732TM 2SC1815 2SC2240 2SA970 2SC3381 2SA1349 2SJ74 2SC3136 2SK118 2SK241 2SC1815 2SA1015 2SA1349 2SA1015 2sc2240 equivalent 2SJ109
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