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2SK1165 datasheet (11)

Part Manufacturer Description Type PDF
2SK1165 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1165 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
2SK1165 Hitachi Semiconductor Mosfet Guide Original PDF
2SK1165 Renesas Technology Silicon N Channel MOS FET Original PDF
2SK1165 Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK1165 Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SK1165 Others Shortform Datasheet & Cross References Data Scan PDF
2SK1165 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1165 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1165 Others FET Data Book Scan PDF
2SK1165-E Renesas Technology Silicon N Channel MOS FET Original PDF

2SK1165 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - 2SK1165

Abstract: 2SK1166 DSA003638
Text: 2SK1165 , 2SK1166 Silicon N-Channel MOS FET ADE-208-1252 (Z) 1st. Edition Mar. 2001 , Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK1165 , 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1165 Ratings Unit , 1% 2. Value at TC = 25°C 2 2SK1165 , 2SK1166 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1165 V(BR)DSS 450 breakdown voltage 2SK1166 Typ Max


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PDF 2SK1165, 2SK1166 ADE-208-1252 2SK1165 2SK1165 2SK1166 DSA003638
2005 - 2SK1165

Abstract: 2SK1165-E 2SK1166 2SK1166-E PRSS0004ZE-A SC-65
Text: 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1165-E 2SK1166 , 2SK1165 , 2SK1166 Silicon N Channel MOS FET REJ03G0914-0200 (Previous: ADE-208-1252) Rev , 2SK1165 , 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS , Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1165 2SK1166 Gate to source , 2SK1165 2SK1166 V(BR)DSS 450 500 - - V ID = 10 mA, VGS = 0 Gate to source


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PDF 2SK1165, 2SK1166 REJ03G0914-0200 ADE-208-1252) PRSS0004ZE-A 2SK1165 2SK1165-E 2SK1166 2SK1166-E PRSS0004ZE-A SC-65
1999 - 2SK1166

Abstract: 2SK1165
Text: 2SK1165 , 2SK1166 Silicon N-Channel MOS FET Application TO­3P High speed power switching , - Drain to source voltage 2SK1165 VDSS 450 - 2SK1166 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1165 , 2SK1166 Table 2 Electrical , - Drain to source breakdown voltage 2SK1165 V(BR)DSS 450 - 2SK1166 - - , - Zero gate voltage drain current 2SK1165 IDSS - - 250 µA VDS = 360 V, VGS


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PDF 2SK1165, 2SK1166 2SK1165 2SK1166 2SK1165
Not Available

Abstract: No abstract text available
Text: 2SK1165 , 2SK1166 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , Outline 3. Source 2SK1165 , 2SK1166 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit 2SK1165 450 V 2SK1166 Drain to source voltage Ratings 500 Gate to source voltage , °C Note 1. PW < 1 0 (os, duty cycle < 1% 2. Value at Tc = 25°C 2 HITACHI 2SK1165 , voltage 2SK1165 V(B )DS RS 450 2SK1166 Max Unit Test conditions — — V


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PDF 2SK1165, 2SK1166 2SK1165
2000 - 2SK1165

Abstract: 2SK1166
Text: products contained therein. 2SK1165 , 2SK1166 Silicon N-Channel MOS FET ADE-208-1252 (Z) 1st , . Source 2SK1165 , 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1165 Ratings Unit VDSS 450 V 2SK1166 500 Gate to source voltage Drain , Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1165 , 2SK1166 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1165 V(BR)DSS 450 breakdown voltage


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PDF
2005 - 2SK1165

Abstract: 2SK1165-E 2SK1166 2SK1166-E PRSS0004ZE-A SC-65
Text: 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1165-E 2SK1166 , . 2SK1165 , 2SK1166 Silicon N Channel MOS FET REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07 , (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1165 , 2SK1166 , temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1165 2SK1166 Gate to source voltage Drain , °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit 2SK1165 2SK1166 V


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PDF
K1166

Abstract: K1165
Text: 2SK1165 ,2SK1166 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching , 226 2SK1165 , 2SK1166 Absolute Maximum Ratings Item Drain to source voltage 2S K 11 65 2S K 11 , HITACHI 22 7 2SK1165 , 2SK1166 Electrical Characteristics Item Drain to source breakdown voltage 2 , HITACHI 228 2SK1165 , 2SK1166 Power vs. Temperature Derating Maximum Safe Operation Area (W) Channel , to Source Voltage VDS (V) Gate to Source Voltage Ves (V) HITACHI 229 2SK1165 ,2SK1166


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PDF 2SK1165 2SK1166 2SK1165, K1166 K1165
1999 - Hitachi DSA002780

Abstract: No abstract text available
Text: 2SK1165 , 2SK1166 Silicon N-Channel MOS FET Application High speed power switching Features , ) 3. Source S 2SK1165 , 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current Body to drain diode , 500 ±30 12 48 12 100 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1165 , 2SK1166 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1165 V(BR)DSS


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PDF 2SK1165, 2SK1166 2SK1165 2SK1166 D-85622 Hitachi DSA002780
2005 - Not Available

Abstract: No abstract text available
Text: 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1165-E 2SK1166 , developed or manufactured by or for Renesas Electronics. 2SK1165 , 2SK1166 Silicon N Channel MOS FET , , 2005 page 1 of 6 2 S 3 2SK1165 , 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item , °C 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current ID 1 Notes , °C) Item Symbol Min Typ Max Unit 2SK1165 2SK1166 V(BR)DSS 450 500 — â


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PDF
1999 - 2SK1165

Abstract: 2SK1166 Hitachi DSA00387
Text: 2SK1165 , 2SK1166 Silicon N-Channel MOS FET Application High speed power switching Features , . Gate 2. Drain (Flange) 3. Source 2SK1165 , 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1165 Ratings Unit VDSS 450 V 2SK1166 500 , 2SK1165 , 2SK1166 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1165 , = ±25 V, VDS = 0 Zero gate voltage 2SK1165 I DSS - - 250 µA VDS = 360 V, VGS


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PDF 2SK1165, 2SK1166 2SK1165 2SK1165 2SK1166 Hitachi DSA00387
1997 - 2SK1165

Abstract: 2SK1166
Text: 2SK1165 , 2SK1166 Silicon N-Channel MOS FET November 1996 Application High speed power , 2 3 1. Gate S 2. Drain (Flange) 3. Source 2SK1165 , 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1165 Ratings Unit VDSS 450 , TC = 25°C 2SK1165 , 2SK1166 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1165 V(BR)DSS 450 2SK1166 Typ Max Unit Test


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PDF 2SK1165, 2SK1166 2SK1165 2SK1165 2SK1166
2005 - Not Available

Abstract: No abstract text available
Text: 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1165-E 2SK1166 , developed or manufactured by or for Renesas Electronics. 2SK1165 , 2SK1166 Silicon N Channel MOS FET , , 2005 page 1 of 6 2 S 3 2SK1165 , 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item , ° C ° C 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current ID 1 , = 25°C) Item Symbol Min Typ Max Unit 2SK1165 2SK1166 V(BR)DSS 450 500


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2SK1778

Abstract: peh 165 2sk1299 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
Text: 77 145 1150 2SK1164 500 0.6 0.8 2SK1165 450 12 0.4 0.55 10 90 180 1450 2SK1166 , 2SK1165 2SK1166 2SK1167 2SK1168 2SK1268 2SK1169 2SK1170 2SX1526 2SK1527 2SK1629 2SK1836 2SK1837


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PDF 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1778 peh 165 2sk1299 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
2SK695

Abstract: 2SK1401A 2SK1401 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
Text: 77 145 1150 2SK1164 500 0.6 0.8 2SK1165 450 12 0.4 0.55 10 90 180 1450 2SK1166 , 2SK1165 2SK1166 2SK1167 2SK1168 2SK1268 2SK1169 2SK1170 2SX1526 2SK1527 2SK1629 2SK1836 2SK1837


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PDF 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK695 2SK1401A 2SK1401 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
2sk1197

Abstract: 2SK1202 2SK1159 2SK1158 2SK1157 2SK1156 2SK1155 2SK1154 2SK1153 NEC 2501L
Text: 2SK1165 B iL SW-Reg, DDC MOS N E 450 DSS ±30 s 12 D 100 ±10« ±25 250« 360 2 3 10 lm 6 10 10 6 , =6A,VDD=30V 149 GDS 2SK1165 1450 55 0 10 0. 6 10 6 ton=90ns, toff=180nstyp ID=6A. VDD=30V 149 GDS


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PDF 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1172 2SK1173 50nstyp 2SK1194 2SK1195 2sk1197 2SK1202 2SK1159 2SK1158 NEC 2501L
Not Available

Abstract: No abstract text available
Text: 2SK1165 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition


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PDF 2SK1165
flyback 200w

Abstract: 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
Text: 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
2SJ113

Abstract: 2cv1 2SK1635 2SK513 2SK1665 2SJ214 2SK1151 GN12030 2SK1153 2SK579
Text: 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ113 2cv1 2SK1635 2SK513 2SK1665 2SJ214 GN12030
2SK2424

Abstract: 2SK1165
Text: - * Pulse Test See characteristics curves of 2SK1165. Hitachi Semiconductor


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PDF 2SK2424 220CFM 2SK1165. 2SK2424 2SK1165
1999 - Not Available

Abstract: No abstract text available
Text: drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK1165 , 2SK1166


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PDF 2SK1328, 2SK1329 2SK1328 2SK1329
Not Available

Abstract: No abstract text available
Text: N ote 1. P ulse te st See characteristic curves of 2SK1165 , 2SK1166. HITACHI 3


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PDF 2SK1328, 2SK1329 2SK1328 2SK1165, 2SK1166.
HITACHI 2SK* TO-3

Abstract: 2SK1401A 2SK1401 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
Text: 77 145 1150 2SK1164 500 0.6 0.8 2SK1165 450 12 0.4 0.55 10 90 180 1450 2SK1166


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PDF 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 HITACHI 2SK* TO-3 2SK1401A 2SK1401 2SK1168 2SK1167 2SK1166 2SK1165 2SK1164 2SK1163 2SK1162
2SK1158

Abstract: 2sk1299 2SK1341 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152 2SK1151 Hitachi Scans-001
Text: 2SK1165 2SK1166 2SK1167 2SK1168 2SK1268 2SK1169 2SK1170 2SX1526 2SK1527 2SK1629 2SK1836 2SK1837


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PDF CSJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V 2SK440 2SK1158 2sk1299 2SK1341 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152 2SK1151 Hitachi Scans-001
2sj177

Abstract: 2sk1778 2sk1301 2SK97-2 2SK580 2SK579 2SK1153 2SK1152 2SK1151 2sj175
Text: 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sj177 2sk1778 2sk1301 2SK97-2 2sj175
1997 - Hitachi DSA002713

Abstract: No abstract text available
Text: A, VGS = 10 V * 1 See characteristic curves of 2SK1165 , 2SK1166. 3 2SK1328, 2SK1329


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PDF 2SK1328, 2SK1329 2SK1328 2SK1329 Hitachi DSA002713
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