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Renesas Electronics Corporation
2SK1160-E - Bulk (Alt: 2SK1160-E) 2SK1160-E ECAD Model
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2SK1160 TO-220 2SK1160 ECAD Model
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2SK1160 datasheet (9)

Part ECAD Model Manufacturer Description Type PDF
2SK1160 2SK1160 ECAD Model Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1160 2SK1160 ECAD Model Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
2SK1160 2SK1160 ECAD Model Hitachi Semiconductor Mosfet Guide Original PDF
2SK1160 2SK1160 ECAD Model Renesas Technology Silicon N Channel MOS FET Original PDF
2SK1160 2SK1160 ECAD Model Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SK1160 2SK1160 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
2SK1160 2SK1160 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1160 2SK1160 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1160 2SK1160 ECAD Model Others FET Data Book Scan PDF

2SK1160 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
k1159

Abstract: K1160
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET HITACHI Application H ig h sp eed p o w e r sw itch , . Source os 211 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2S K 1159 2SK1160 Gate to source voltage Drain current Drain peak current Body to drain diode reverse , 2SK1159, 2SK1160 Maximum Safe Operation Area (W) Channel Dissipation 0 Poh 50 100 150 Drain to , to Source Voltage VGS (V| HITACHI 214 2SK1159, 2SK1160 > Drain to Source Saturation Voltage


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PDF 2SK1159 2SK1160 2SK1159, 2SK1160 k1159 K1160
2000 - 2SK1159

Abstract: 2SK1160 DSA003638
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET ADE-208-1249 (Z) 1st. Edition Mar. 2001 , 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1159 Ratings Unit VDSS 450 V 2SK1160 500 Gate to source voltage VGSS Drain current , , duty cycle 1% 2. Value at TC = 25°C 2 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1159 V(BR)DSS 450 breakdown voltage 2SK1160 Typ


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PDF 2SK1159, 2SK1160 ADE-208-1249 O-220AB 2SK1159 2SK1159 2SK1160 DSA003638
1999 - 2SK1159

Abstract: 2SK1160
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , Drain to source voltage 2SK1159 VDSS 450 - 2SK1160 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1159, 2SK1160 Table 2 Electrical , - Drain to source breakdown voltage 2SK1159 V(BR)DSS 450 - 2SK1160 - - , = 0 - -­ 2SK1160 VDS = 400 V, VGS = 0


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PDF 2SK1159, 2SK1160 220AB 2SK1159 2SK1159 2SK1160
1999 - Hitachi DSA002780

Abstract: No abstract text available
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features , 1. Gate 2. Drain (Flange) 3. Source S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1159 2SK1160 Gate to source voltage Drain current Drain peak current , 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1159 V(BR)DSS 2SK1160 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100


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PDF 2SK1159, 2SK1160 O-220AB 2SK1159 2SK1160 D-85622 Hitachi DSA002780
1999 - 2SK1159

Abstract: 2SK1160 Hitachi DSA00337
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features , 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1159, 2SK1160 Absolute Maximum Ratings , 2SK1160 500 Gate to source voltage Drain current ±30 Drain peak current I D(pulse , 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1159 V(BR)DSS 450 breakdown voltage 2SK1160 Typ Max Unit Test conditions - -


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PDF 2SK1159, 2SK1160 O-220AB 2SK1159 2SK1159 2SK1160 Hitachi DSA00337
Not Available

Abstract: No abstract text available
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , motor driver Outline 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit 2 S K 1 159 450 V 2SK1160 Drain to source voltage Ratings 500 Gate to , 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Drain to source breakdown voltage 2S K 1159 V(B )D S RS 450 2SK1160 Max Unit Test conditions — â


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PDF 2SK1159, 2SK1160
2005 - 2SK1159

Abstract: 2SK1160 PRSS0004AC-A 2SK1160-E
Text: 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1159-E 2SK1160-E Quantity 500 pcs , 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev , 3 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , temperature Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1159 2SK1160 Gate to , Unit Drain to source breakdown 2SK1159 voltage 2SK1160 V(BR)DSS 450 500 - - V


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PDF 2SK1159, 2SK1160 REJ03G0911-0200 ADE-208-1249) PRSS0004AC-A O-220AB) 2SK1159 2SK1160 PRSS0004AC-A 2SK1160-E
2000 - 2SK1159

Abstract: 2SK1160
Text: products contained therein. 2SK1159, 2SK1160 Silicon N-Channel MOS FET ADE-208-1249 (Z) 1st , ) 3. Source G S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1159 Ratings Unit VDSS 450 V 2SK1160 500 Gate to , +150 °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1159, 2SK1160 , breakdown voltage 2SK1160 Typ Max Unit Test conditions - - V I D = 10 mA, VGS =


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PDF
1999 - Hitachi DSA00279

Abstract: No abstract text available
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features , for switching regulator, DC-DC converter and motor driver Outline 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1159 2SK1160 Gate to source voltage Drain , Symbol Min 2SK1159 V(BR)DSS 2SK1160 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = , leak current Zero gate voltage drain current 2SK1159 I DSS 2SK1160 Gate to source cutoff voltage


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PDF 2SK1159, 2SK1160 2SK1159 2SK1160 Hitachi DSA00279
2005 - Not Available

Abstract: No abstract text available
Text: Information Part Name 2SK1159-E 2SK1160-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , developed or manufactured by or for Renesas Electronics. 2SK1159, 2SK1160 Silicon N Channel MOS FET , 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta , €“55 to +150 ° C ° C 2SK1159 2SK1160 Gate to source voltage Drain current Drain peak , voltage 2SK1160 V(BR)DSS 450 500 — — V ID = 10 mA, VGS = 0 Gate to source


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PDF
1997 - Hitachi DSA002712

Abstract: No abstract text available
Text: 2SK1159, 2SK1160 Silicon N-Channel MOS FET November 1996 Application High speed power , 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1159 2SK1160 Gate to source voltage Drain current Drain , 2SK1159, 2SK1160 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1159 V(BR)DSS 2SK1160 Gate to source breakdown voltage Gate to source leak current Zero gate


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PDF 2SK1159, 2SK1160 O-220AB 2SK1159 2SK1160 Hitachi DSA002712
2005 - 2SK1159

Abstract: 2SK1160 PRSS0004AC-A
Text: 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1159-E 2SK1160-E Quantity 500 pcs , . 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07 , 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS , Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1159 2SK1160 Gate to source , Drain to source breakdown 2SK1159 voltage 2SK1160 V(BR)DSS 450 500 - - V ID = 10


Original
PDF
2005 - 2SK1159

Abstract: 2SK1160 PRSS0004AC-A
Text: 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1159-E 2SK1160-E Quantity 500 pcs , 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev , 3 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , temperature Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1159 2SK1160 Gate to , Unit Drain to source breakdown 2SK1159 voltage 2SK1160 V(BR)DSS 450 500 - - V


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PDF 2SK1159, 2SK1160 REJ03G0911-0200 ADE-208-1249) PRSS0004AC-A O-220AB) 2SK1159 2SK1160 PRSS0004AC-A
2SK1158

Abstract: 2sk1299 2SK1341 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152 2SK1151 Hitachi Scans-001
Text: 70 135 1050 2SK1158 500 60 0.7 0.9 2SK1159 450 8 0.55 0.7 7.5 72 145 1150 2SK1160 500 , 2SK1626 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4


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PDF CSJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V 2SK440 2SK1158 2sk1299 2SK1341 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152 2SK1151 Hitachi Scans-001
2SK1159

Abstract: 2SK1160 2SK1315 2SK1316 drain body breakdown voltage
Text: - * Pulse Test See characteristic curves of 2SK1159, 2SK1160. 2SK1315 L , 2SK1315 S , 2SK1316


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PDF 2SK1315 2SK1316 2SK1315 2SK1316 2SK1159, 2SK1160. 2SK1159 2SK1160 drain body breakdown voltage
2SK1637

Abstract: 2SK1838 2SK1636 2SK1541 2SK1540 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152
Text: 70 135 1050 2SK1158 500 60 0.7 0.9 2SK1159 450 8 0.55 0.7 7.5 72 145 1150 2SK1160 500


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PDF 2SK1338 2SK1807 2SK1668 2SK1762 2SK1862 2SK1863 2SK1626 O-220FM 2SK1627 2SK1566 2SK1637 2SK1838 2SK1636 2SK1541 2SK1540 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152
2SK series

Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
Text: . 211 2SK1160.


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PDF 2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
flyback 200w

Abstract: 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
Text: 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
2SJ113

Abstract: 2cv1 2SK1635 2SK513 2SK1665 2SJ214 2SK1151 GN12030 2SK1153 2SK579
Text: 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ113 2cv1 2SK1635 2SK513 2SK1665 2SJ214 GN12030
1999 - Not Available

Abstract: No abstract text available
Text: ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK1159, 2SK1160. 2SK1163, 2SK1164 Maximum


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PDF 2SK1163, 2SK1164 2SK1163
Not Available

Abstract: No abstract text available
Text: = 6 £2 1. Pulse test See characteristic curves of 2SK1159, 2SK1160. 3 HITACHI


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PDF 2SK1163, 2SK1164 2SK1159, 2SK1160.
Not Available

Abstract: No abstract text available
Text: curves of 2SK1159, 2SK1160. HITACHI 3 -P^ HITACHI 2SK1315(L)(S), 2SK1316(L)(S)


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PDF 2SK1315 2SK1316 2SK1315 2SK1316 2SK1159, 2SK1160.
1999 - Hitachi DSA002779

Abstract: No abstract text available
Text: recovery time Note: 1. Pulse test See characteristic curves of 2SK1159, 2SK1160. 3 2SK1315(L)(S


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PDF 2SK1315 2SK1316 D-85622 Hitachi DSA002779
2SK1159

Abstract: 2SK1160 2SK1163 2SK1164
Text: - * Pulse Test See characteristic curves of 2SK1159, 2SK1160. 2SK1163, 2SK1164 Maximum Safe


Original
PDF 2SK1163, 2SK1164 2SK1163 2SK1159 2SK1160 2SK1163 2SK1164
1999 - Hitachi DSA002780

Abstract: No abstract text available
Text: characteristic curves of 2SK1159, 2SK1160. 3 2SK1163, 2SK1164 Power vs. Temperature Derating 120 Channel


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PDF 2SK1163, 2SK1164 2SK1163 2SK1164 D-85622 Hitachi DSA002780
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