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Renesas Electronics Corporation
2SK1157-E Power Field-Effect Transistor, 7A I(D), 450V, 0.8ohm, 1-Element, N-Channel, MOSFET, TO-220AB
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2SK1157 datasheet (11)

Part Manufacturer Description Type PDF
2SK1157 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
2SK1157 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1157 Hitachi Semiconductor Mosfet Guide Original PDF
2SK1157 Renesas Technology Silicon N Channel MOS FET Original PDF
2SK1157 Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK1157 Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SK1157 Others Shortform Datasheet & Cross References Data Scan PDF
2SK1157 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1157 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1157 Others FET Data Book Scan PDF
2SK1157-E Renesas Technology Silicon N Channel MOS FET Original PDF

2SK1157 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 2SK1157

Abstract: 2SK1158
Text: 2SK1157 , 2SK1158 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , Drain to source voltage 2SK1157 VDSS 450 - 2SK1158 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1157 , 2SK1158 Table 2 Electrical , - Drain to source breakdown voltage 2SK1157 V(BR)DSS 450 - 2SK1158 - - , - Zero gate voltage drain current 2SK1157 IDSS - - 250 µA VDS = 360 V, VGS


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PDF 2SK1157, 2SK1158 220AB 2SK1157 2SK1157 2SK1158
2000 - 2SK1157

Abstract: 2SK1158 DSA003638
Text: 2SK1157 , 2SK1158 Silicon N-Channel MOS FET ADE-208-1248 (Z) 1st. Edition Mar. 2001 , 2SK1157 , 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1157 Ratings Unit VDSS 450 V 2SK1158 500 Gate to source voltage VGSS , 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1157 , 2SK1158 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1157 V(BR)DSS 450 breakdown voltage


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PDF 2SK1157, 2SK1158 ADE-208-1248 O-220AB 2SK1157 2SK1157 2SK1158 DSA003638
Not Available

Abstract: No abstract text available
Text: 2SK1157 , 2SK1158 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , motor driver Outline 2SK1157 , 2SK1158 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol , 2SK1157 , 2SK1158 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Drain to source , , S Rl = 7.5 £2 1. Pulse test 3 HITACHI 2SK1157 , 2SK1158 Pow er vs. Tem perature , oltage V DS (V) 4 HITACHI G ate to Source Voltage V GS (V) 2SK1157 , 2SK1158 5 HITACHI


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PDF 2SK1157, 2SK1158
1999 - 2SK1157

Abstract: 2SK1158 Hitachi DSA00398
Text: 2SK1157 , 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features , 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1157 , 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1157 Ratings Unit VDSS 450 , at TC = 25°C 2SK1157 , 2SK1158 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1157 V(BR)DSS 450 breakdown voltage 2SK1158 Typ Max Unit Test


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PDF 2SK1157, 2SK1158 O-220AB 2SK1157 2SK1157 2SK1158 Hitachi DSA00398
2005 - 2SK1157

Abstract: 2SK1157-E 2SK1158 2SK1158-E PRSS0004AC-A
Text: 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1157-E 2SK1158-E Quantity , . 2SK1157 , 2SK1158 Silicon N Channel MOS FET REJ03G0910-0200 (Previous: ADE-208-1248) Rev.2.00 Sep 07 , 2SK1157 , 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS , Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1157 2SK1158 Gate to source , 2SK1157 2SK1158 V(BR)DSS 450 500 - - V ID = 10 mA, VGS = 0 Gate to source


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1997 - Hitachi DSA002712

Abstract: No abstract text available
Text: 2SK1157 , 2SK1158 Silicon N-Channel MOS FET November 1996 Application High speed power , 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1157 , 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage Drain current Drain , 2SK1157 , 2SK1158 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1157 V(BR)DSS 2SK1158 Gate to source breakdown voltage Gate to source leak current Zero gate


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PDF 2SK1157, 2SK1158 O-220AB 2SK1157 2SK1158 Hitachi DSA002712
1999 - Hitachi DSA002780

Abstract: No abstract text available
Text: 2SK1157 , 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features , 1. Gate 2. Drain (Flange) 3. Source S 2SK1157 , 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage Drain current Drain peak current , 2SK1157 , 2SK1158 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1157 V(BR)DSS 2SK1158 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100


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PDF 2SK1157, 2SK1158 O-220AB 2SK1157 2SK1158 D-85622 Hitachi DSA002780
2005 - 2SK1157

Abstract: 2SK1157-E 2SK1158 2SK1158-E PRSS0004AC-A
Text: 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1157-E 2SK1158-E Quantity , 2SK1157 , 2SK1158 Silicon N Channel MOS FET REJ03G0910-0200 (Previous: ADE-208-1248) Rev , 3 2SK1157 , 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , temperature Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1157 2SK1158 Gate to , Unit 2SK1157 2SK1158 V(BR)DSS 450 500 - - V ID = 10 mA, VGS = 0 Gate to


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PDF 2SK1157, 2SK1158 REJ03G0910-0200 ADE-208-1248) PRSS0004AC-A O-220AB) 2SK1157 2SK1157-E 2SK1158 2SK1158-E PRSS0004AC-A
1999 - Hitachi DSA00279

Abstract: No abstract text available
Text: 2SK1157 , 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features , 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage VGSS Symbol VDSS Ratings 450 500 ±30 V Unit V 2SK1157 , 2SK1158 Drain current Drain peak current Body to drain diode , 2SK1157 V(BR)DS 450 S 2SK1158 500 V(BR)G ±30 SS IGSS - - - - - - ±10 250 V µA µA IG = ±100 µA, VDS = , current Zero gate voltage drain current 2SK1157 IDSS 2SK1158 Gate to source cutoff voltage Static


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PDF 2SK1157, 2SK1158 2SK1157 2SK1158 Hitachi DSA00279
Not Available

Abstract: No abstract text available
Text: 2SK1157 ,2SK1158 Silicon N-Channel MOS FET HITACHI Application High speed power switching , Suitable for switching regulator, DC-DC converter and motor driver Outline 204 2SK1157 , 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage , Unit V V A A A W °C °C HITACHI 205 2SK1157 , 2SK1158 Electrical Characteristics Item Drain to source breakdown voltage 2SK1157 2SK1158 V(BR)GSS (T a = 2 5 °C ) Symbol Min V(BR)DSS


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PDF 2SK1157 2SK1158 2SK1157, 2SK1158
2000 - 2SK1157

Abstract: 2SK1158
Text: products contained therein. 2SK1157 , 2SK1158 Silicon N-Channel MOS FET ADE-208-1248 (Z) 1st , ) 3. Source G S 2SK1157 , 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1157 Ratings Unit VDSS 450 V 2SK1158 500 Gate to , +150 °C Note: 2 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1157 , 2SK1158 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1157 V(BR)DSS 450


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PDF
2005 - Not Available

Abstract: No abstract text available
Text: Information Part Name 2SK1157-E 2SK1158-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , developed or manufactured by or for Renesas Electronics. 2SK1157 , 2SK1158 Silicon N Channel MOS FET , 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1157 , 2SK1158 Absolute Maximum Ratings (Ta , €“55 to +150 ° C ° C 2SK1157 2SK1158 Gate to source voltage Drain current Drain peak , Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit 2SK1157 2SK1158 V(BR)DSS 450


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2SK1158

Abstract: 2sk1299 2SK1341 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152 2SK1151 Hitachi Scans-001
Text: 2SK1155 450 5 50 1 1.4 4 35 80 640 2SK1156 500 1.2 1.5 TO-220AB 2SK1157 450 ±30 7 0.6 0.8 6.5 , 2SK1151 2SK1152 2SK1153 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541


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PDF CSJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V 2SK440 2SK1158 2sk1299 2SK1341 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152 2SK1151 Hitachi Scans-001
flyback 200w

Abstract: 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
Text: 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
2sk1197

Abstract: 2SK1202 2SK1159 2SK1158 2SK1157 2SK1156 2SK1155 2SK1154 2SK1153 NEC 2501L
Text: 2SK1157 BiL SW-Reg, DDC MOS N E 450 DSS ±30 s 7 D 60 ±10(i ±25 250« 360 2 3 10 lm 4 6.5 10 4 2SK1158 , 2SK1156 1050 40 0 10 0.8 10 4 ton=70ns. toff=135nstyp 1D=4A, VDD=30V 116B GDS 2SK1157 1050 40 0 10


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PDF 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1172 2SK1173 50nstyp 2SK1194 2SK1195 2sk1197 2SK1202 2SK1159 2SK1158 NEC 2501L
1999 - 2SK1157

Abstract: 2SK1158 2SK1540 2SK1541
Text: - * Pulse Test See characteristic curves of 2SK1157 , 2SK1158. 2SK1540 L , 2SK1540 S , 2SK1541


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PDF 2SK1540 2SK1541 2SK1540 2SK1541 2SK1157, 2SK1158. 2SK1157 2SK1158
1999 - Not Available

Abstract: No abstract text available
Text: drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK1157 , 2SK1158


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PDF 2SK1161, 2SK1162 2SK1161 2SK1162 2SK1161
1999 - 2SK1157

Abstract: 2SK1158 2SK1566 2SK1567
Text: - * Pulse Test See characteristic curves of 2SK1157 , 2SK1158. 2SK1566, 2SK1567 Maximum Safe


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PDF 2SK1566, 2SK1567 220FM 2SK1566 2SK1157 2SK1158 2SK1566 2SK1567
2SK1637

Abstract: 2SK1838 2SK1636 2SK1541 2SK1540 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152
Text: 2SK1155 450 5 50 1 1.4 4 35 80 640 2SK1156 500 1.2 1.5 TO-220AB 2SK1157 450 ±30 7 0.6 0.8 6.5


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PDF 2SK1338 2SK1807 2SK1668 2SK1762 2SK1862 2SK1863 2SK1626 O-220FM 2SK1627 2SK1566 2SK1637 2SK1838 2SK1636 2SK1541 2SK1540 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152
2SK series

Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
Text: . 197 2SK1157.


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PDF 2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
1997 - Hitachi DSA001651

Abstract: No abstract text available
Text: = 100 A/µs Note 1. Pulse test See characteristic curves of 2SK1157 , 2SK1158. 3


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PDF 2SK1566, 2SK1567 O-220FM 2SK1566 D-85622 Hitachi DSA001651
1999 - k1832

Abstract: K1831 2SK1157 2SK1158 2SK1831 2SK1832
Text: - * Pulse Test See characteristic curves of 2SK1157 , 2SK1158 2SK1831, 2SK1832 Maximum


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PDF 2SK1831, 2SK1832 2SK1831 sou150 k1832 K1831 2SK1157 2SK1158 2SK1831 2SK1832
1999 - Hitachi DSA00279

Abstract: No abstract text available
Text: See characteristic curve of 2SK1157 , 2SK1158. 3 2SK2116, 2SK2117 4 2SK2116, 2SK2117


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PDF 2SK2116, 2SK2117 2SK2116 2SK2117 Hitachi DSA00279
1997 - Hitachi DSA002748

Abstract: No abstract text available
Text: characteristic curves of 2SK1157 , 2SK1158 3 2SK1831, 2SK1832 Power vs. Temperature Derating 75 Channel


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PDF 2SK1831, 2SK1832 2SK1831 2SK1832 K1831 K1832 D-85622 Hitachi DSA002748
1997 - Hitachi DSA002749

Abstract: No abstract text available
Text: of 2SK1157 , 2SK1158. 3 2SK2116, 2SK2117 Power vs. Temperature Derating 60 50 Maximum Safe


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PDF 2SK2116, 2SK2117 O-220CFM 2SK2116 2SK2117 D-85622 Hitachi DSA002749
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