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2SK1156 Hitachi Ltd Bristol Electronics 50 - -
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2SK1156 datasheet (12)

Part Manufacturer Description Type PDF
2SK1156 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
2SK1156 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1156 Hitachi Semiconductor Mosfet Guide Original PDF
2SK1156 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1156 Renesas Technology Silicon N Channel MOS FET Original PDF
2SK1156 Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK1156 Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SK1156 Others Shortform Datasheet & Cross References Data Scan PDF
2SK1156 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1156 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1156 Others FET Data Book Scan PDF
2SK1156-E Renesas Technology Silicon N Channel MOS FET Original PDF

2SK1156 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 2SK1155

Abstract: 2SK1156 Hitachi DSA00395
Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features , . Drain (Flange) 3. Source G S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1155 Ratings Unit VDSS 450 V 2SK1156 500 , , 2SK1156 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1155 V(BR)DSS 450 breakdown voltage 2SK1156 Typ Max Unit Test conditions - - V I D =


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PDF 2SK1155, 2SK1156 O-220AB 2SK1155 2SK1155 2SK1156 Hitachi DSA00395
2000 - 2SK1155

Abstract: 2SK1156
Text: products contained therein. 2SK1155, 2SK1156 Silicon N-Channel MOS FET ADE-208-1247 (Z) 1st , G S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1155 Ratings Unit VDSS 450 V 2SK1156 500 Gate to source voltage , Note: 2 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1155, 2SK1156 Electrical , 2SK1156 Typ Max Unit Test conditions - - V I D = 10 mA, VGS = 0 500 Gate


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PDF
2SK1155

Abstract: 2SK1156
Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , - Drain to source voltage 2SK1155 VDSS 450 - 2SK1156 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1155, 2SK1156 Table 2 Electrical , - Drain to source breakdown voltage 2SK1155 V(BR)DSS 450 - 2SK1156 - - , = 0 - -­ 2SK1156 VDS = 400 V, VGS = 0


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PDF 2SK1155, 2SK1156 220AB 2SK1155 2SK1155 2SK1156
Not Available

Abstract: No abstract text available
Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET HITACHI Application High speed power switching , (Flange) 3. Source 197 2SK1155, 2SK1156 Absolute Maximum Ratings (T a = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain diode , , 2SK1156 Electrical Characteristics ( T a Item Drain to source breakdown voltage = 2 5 °C ) Symbol 2SK1155 V(BR)DSS 2SK1156 V(BR)GSS Min 450 500 ±30 - Typ - Max - Unit V Test


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PDF 2SK1155 2SK1156 2SK1156 2SK1155,
1999 - Hitachi DSA002780

Abstract: No abstract text available
Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features , . Drain (Flange) 3. Source S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain , Ratings 450 500 ±30 5 20 5 50 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1155, 2SK1156 , 2SK1156 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V


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PDF 2SK1155, 2SK1156 O-220AB 2SK1155 2SK1156 D-85622 Hitachi DSA002780
1999 - 2sk1155

Abstract: Hitachi DSA00279
Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features , for switching regulator and DC-DC converter Outline 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain , 2SK1156 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V , voltage drain current 2SK1155 I DSS 2SK1156 Gate to source cutoff voltage Static Drain to source


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PDF 2SK1155, 2SK1156 2SK1155 2SK1156 Hitachi DSA00279
1997 - Hitachi DSA002712

Abstract: No abstract text available
Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET November 1996 Application High speed power , . Gate 2. Drain (Flange) 3. Source S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to , Ratings 450 500 ±30 5 20 5 50 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1155, 2SK1156 , 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current V(BR


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PDF 2SK1155, 2SK1156 O-220AB 2SK1155 2SK1156 Hitachi DSA002712
2005 - 2SK1155

Abstract: 2SK1155-E 2SK1156 2SK1156-E PRSS0004AC-A
Text: Ordering Information Part Name 2SK1155-E 2SK1156-E Quantity 500 pcs 500 pcs Shipping Container , 2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev , 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS Ratings 450 Unit V , Tstg 150 ­55 to +150 °C °C Drain to source voltage 2SK1155 2SK1156 Gate to source , Drain to source breakdown voltage 2SK1155 2SK1156 Gate to source breakdown voltage Gate to


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PDF 2SK1155, 2SK1156 REJ03G0909-0200 ADE-208-1247) PRSS0004AC-A O-220AB) 2SK1155 2SK1155-E 2SK1156 2SK1156-E PRSS0004AC-A
2000 - 2SK1155

Abstract: 2SK1156 DSA003638
Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET ADE-208-1247 (Z) 1st. Edition Mar. 2001 , , 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1155 Ratings Unit VDSS 450 V 2SK1156 500 Gate to source voltage VGSS Drain current , µs, duty cycle 1% 2. Value at TC = 25°C 2SK1155, 2SK1156 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1155 V(BR)DSS 450 breakdown voltage 2SK1156 Typ


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PDF 2SK1155, 2SK1156 ADE-208-1247 O-220AB 2SK1155 2SK1155 2SK1156 DSA003638
k1155

Abstract: No abstract text available
Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , Outline 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit 2 S K 1 155 450 V 2SK1156 Drain to source voltage Ratings 500 Gate to source voltage ^G S S , 1. PW < 1 0 (os, duty cycle < 1% 2. Value at Tc = 25°C 2 HITACHI 2SK1155, 2SK1156 , 1155 V(B )D S RS 450 2SK1156 Max Unit Test conditions — — V lD= 10 mA


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PDF 2SK1155, 2SK1156 k1155
1999 - Not Available

Abstract: No abstract text available
Text: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , - - 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain diode , , duty cycle 1 % * Value at TC = 25 °C 2SK1155, 2SK1156 Table 2 Electrical Characteristics (Ta = , - - 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate voltage , - - 2SK1156 Gate to source cutoff voltage Static Drain to source on state resistance 2SK1155


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PDF 2SK1155, 2SK1156 220AB 2SK1155 2SK1156
2005 - 2SK1155

Abstract: 2SK1155-E 2SK1156 2SK1156-E PRSS0004AC-A
Text: Information Part Name 2SK1155-E 2SK1156-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , . 2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev.2.00 Sep 07 , .2.00 Sep 07, 2005 page 1 of 6 2 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1155, 2SK1156 , +150 °C °C Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current , voltage 2SK1155 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate


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2005 - Not Available

Abstract: No abstract text available
Text: -E 2SK1156-E 500 pcs 500 pcs Quantity Box (Sack) Box (Sack) Shipping Container Note: For some grades , Renesas Electronics. 2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE , , 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage , temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1155 2SK1156 VGSS , voltage 2SK1155 2SK1156 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr


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2005 - Not Available

Abstract: No abstract text available
Text: Information Part Name 2SK1155-E 2SK1156-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , developed or manufactured by or for Renesas Electronics. 2SK1155, 2SK1156 Silicon N Channel MOS FET , . Drain (Flange) 3. Source S 3 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item , 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current ID 1 Notes: 1. PW â , voltage 2SK1155 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate


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2SK1158

Abstract: 2sk1299 2SK1341 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152 2SK1151 Hitachi Scans-001
Text: 2SK1155 450 5 50 1 1.4 4 35 80 640 2SK1156 500 1.2 1.5 TO-220AB 2SK1157 450 ±30 7 0.6 0.8 6.5 , 2SK1151 2SK1152 2SK1153 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541


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PDF CSJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V 2SK440 2SK1158 2sk1299 2SK1341 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152 2SK1151 Hitachi Scans-001
2sk1197

Abstract: 2SK1202 2SK1159 2SK1158 2SK1157 2SK1156 2SK1155 2SK1154 2SK1153 NEC 2501L
Text: Bj1 SW-Reg, DDC MOS N E 450 DSS ±30 S 5 D 50 ±10/; ±25 250« 360 2 3 10 lm 2. 5 4 10 2.5 2SK1156 , 2SK1156 1050 40 0 10 0.8 10 4 ton=70ns. toff=135nstyp 1D=4A, VDD=30V 116B GDS 2SK1157 1050 40 0 10


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PDF 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1172 2SK1173 50nstyp 2SK1194 2SK1195 2sk1197 2SK1202 2SK1159 2SK1158 NEC 2501L
1999 - 2SK1313

Abstract: 2SK1155 2SK1156 2SK1314
Text: - * Pulse Test See characteristic curves of 2SK1155, 2SK1156. 2SK1313 L , 2SK1313 S , 2SK1314


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PDF 2SK1313 2SK1314 2SK1313 2SK1314 2SK1155, 2SK1156. 2SK1155 2SK1156
flyback 200w

Abstract: 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
Text: 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
2SK1637

Abstract: 2SK1838 2SK1636 2SK1541 2SK1540 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152
Text: 2SK1155 450 5 50 1 1.4 4 35 80 640 2SK1156 500 1.2 1.5 TO-220AB 2SK1157 450 ±30 7 0.6 0.8 6.5


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PDF 2SK1338 2SK1807 2SK1668 2SK1762 2SK1862 2SK1863 2SK1626 O-220FM 2SK1627 2SK1566 2SK1637 2SK1838 2SK1636 2SK1541 2SK1540 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152
2SK series

Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
Text: . 197 2SK1156.


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PDF 2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
2SK1155

Abstract: 2SK1156 2SK1626 2SK1627
Text: - * Pulse Test See characteristic curves of 2SK1155, 2SK1156. 2SK1626, 2SK1627 Maximum Safe


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PDF 2SK1626, 2SK1627 220FM 2SK1626 2SK1155 2SK1156 2SK1626 2SK1627
1999 - Hitachi DSA00279

Abstract: No abstract text available
Text: See characteristics curve of 2SK1155, 2SK1156. 3 2SK2114, 2SK2115 4 2SK2114, 2SK2115


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PDF 2SK2114, 2SK2115 2SK2114 2SK2115 Hitachi DSA00279
1998 - Hitachi DSA002780

Abstract: No abstract text available
Text: characteristics curve of 2SK1155, 2SK1156. 3 2SK2114, 2SK2115 4 2SK2114, 2SK2115 When using this


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PDF 2SK2114, 2SK2115 2SK2114 2SK2115 Hitachi DSA002780
1999 - 2SK1155

Abstract: 2SK1156 2SK1626 2SK1627 2SK2114 2SK2115
Text: - * Pulse Test s See characteristics curve of 2SK1155, 2SK1156. 2SK2114, 2SK2115 Power vs


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PDF 2SK2114, 2SK2115 220CFM 2SK2114 2SK1627 2SK1626 2SK1155 2SK1156 2SK1626 2SK1627 2SK2114 2SK2115
Not Available

Abstract: No abstract text available
Text: , 2SK1156. HITACHI 3 -P^ HITACHI 2SK1313(L)(S), 2SK1314(L)(S)


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PDF 2SK1313 2SK1314 2SK1313 2SK1314 2SK1155, 2SK1156.
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