The Datasheet Archive

2SK1153 datasheet (10)

Part Manufacturer Description Type PDF
2SK1153 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1153 Hitachi Semiconductor Mosfet Guide Original PDF
2SK1153 Renesas Technology Silicon N Channel MOS FET Original PDF
2SK1153 Renesas Technology Silicon N-Channel MOS FET Original PDF
2SK1153 Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SK1153 Others Shortform Datasheet & Cross References Data Scan PDF
2SK1153 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1153 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1153 Others FET Data Book Scan PDF
2SK1153-E Renesas Technology Silicon N Channel MOS FET Original PDF

2SK1153 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - 2SK1153

Abstract: 2SK1154 DSA003638
Text: 2SK1153 , 2SK1154 Silicon N-Channel MOS FET ADE-208-1246 (Z) 1st. Edition Mar. 2001 , Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1153 , 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1153 Ratings , 1% 2. Value at TC = 25°C 2 2SK1153 , 2SK1154 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1153 V(BR)DSS 450 breakdown voltage 2SK1154 Typ Max


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PDF 2SK1153, 2SK1154 ADE-208-1246 O-220AB 2SK1153 2SK1153 2SK1154 DSA003638
1999 - Hitachi DSA002780

Abstract: No abstract text available
Text: 2SK1153 , 2SK1154 Silicon N-Channel MOS FET Application High speed power switching Features , . Drain (Flange) 3. Source S 2SK1153 , 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1153 2SK1154 Gate to source voltage Drain current Drain peak current Body to drain , Ratings 450 500 ±30 3 12 3 30 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1153 , 2SK1154 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1153 V(BR)DSS


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PDF 2SK1153, 2SK1154 O-220AB 2SK1153 2SK1154 D-85622 Hitachi DSA002780
Not Available

Abstract: No abstract text available
Text: 2SK1153 ,2SK1154 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching , . Drain (Flange) /' ¿S 3. Source 190 2SK1153 ,2SK1154 Absolute Maximum Ratings (Ta = 25 °C) Item Drain to source voltage 2SK1153 2SK1154 Gate to source voltage Drain current Drain peak current , 2SK1153 , 2SK1154 Electrical Characteristics Item Drain to source breakdown voltage 2SK1153 2SK1154 V(BR , , VG S= 0 VD S = 400 V, VG S= 0 IGSS - - - - ±10 250 2SK1153 Idss 2SK1154 ^ G S io


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PDF 2SK1153 2SK1154 O-220AB 2SK1154
1999 - 2SK1153

Abstract: 2SK1154
Text: 2SK1153 , 2SK1154 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , to source voltage 2SK1153 VDSS 450 - 2SK1154 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1153 , 2SK1154 Table 2 Electrical , - Drain to source breakdown voltage 2SK1153 V(BR)DSS 450 - 2SK1154 - - , - Zero gate voltage drain current 2SK1153 IDSS - - 250 µA VDS = 360 V, VGS


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PDF 2SK1153, 2SK1154 220AB 2SK1153 2SK1153 2SK1154
1999 - Hitachi DSA00279

Abstract: No abstract text available
Text: 2SK1153 , 2SK1154 Silicon N-Channel MOS FET Application High speed power switching Features , for switching regulator and DC-DC converter Outline 2SK1153 , 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1153 2SK1154 Gate to source voltage Drain current Drain , Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1153 V(BR)DSS , drain current 2SK1153 I DSS 2SK1154 Gate to source cutoff voltage Static Drain to source


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PDF 2SK1153, 2SK1154 2SK1153 2SK1154 25stics Hitachi DSA00279
1999 - 2SK1153

Abstract: 2SK1154 Hitachi DSA00389
Text: 2SK1153 , 2SK1154 Silicon N-Channel MOS FET Application High speed power switching Features , . Drain (Flange) 3. Source G S 2SK1153 , 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1153 Ratings Unit VDSS 450 V 2SK1154 500 , ­55 to +150 °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1153 , 2SK1154 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1153 V(BR)DSS


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PDF 2SK1153, 2SK1154 O-220AB 2SK1153 2SK1153 2SK1154 Hitachi DSA00389
2000 - 2SK1153

Abstract: 2SK1154
Text: products contained therein. 2SK1153 , 2SK1154 Silicon N-Channel MOS FET ADE-208-1246 (Z) 1st , G S 2SK1153 , 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1153 Ratings Unit VDSS 450 V 2SK1154 500 Gate to source voltage Drain , . PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1153 , 2SK1154 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1153 V(BR)DSS 450 breakdown voltage


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1997 - Hitachi DSA002712

Abstract: No abstract text available
Text: 2SK1153 , 2SK1154 Silicon N-Channel MOS FET November 1996 Application High speed power , . Gate 2. Drain (Flange) 3. Source S 2SK1153 , 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1153 2SK1154 Gate to source voltage Drain current Drain peak current Body to , Ratings 450 500 ±30 3 12 3 30 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1153 , 2SK1154 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1153 V(BR)DSS


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PDF 2SK1153, 2SK1154 O-220AB 2SK1153 2SK1154 Hitachi DSA002712
2005 - 2SK1153

Abstract: 2SK1153-E 2SK1154 2SK1154-E PRSS0004AC-A
Text: 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1153-E 2SK1154-E Quantity , . 2SK1153 , 2SK1154 Silicon N Channel MOS FET REJ03G0908-0200 (Previous: ADE-208-1246) Rev.2.00 Sep 07 , .2.00 Sep 07, 2005 page 1 of 6 2 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1153 , 2SK1154 , Tch Tstg 150 ­55 to +150 °C °C 2SK1153 2SK1154 Gate to source voltage Drain current , - - pF ns tr 20 30 - - ns ns Drain to source breakdown voltage 2SK1153


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PDF
2005 - 2SK1153

Abstract: 2SK1153-E 2SK1154 2SK1154-E PRSS0004AC-A
Text: Information Part Name 2SK1153-E 2SK1154-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , 2SK1153 , 2SK1154 Silicon N Channel MOS FET REJ03G0908-0200 (Previous: ADE-208-1246) Rev , 2SK1153 , 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS , Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1153 2SK1154 Gate to source , Drain to source breakdown voltage 2SK1153 2SK1154 Gate to source breakdown voltage Gate to


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PDF 2SK1153, 2SK1154 REJ03G0908-0200 ADE-208-1246) PRSS0004AC-A O-220AB) 2SK1153 2SK1153-E 2SK1154 2SK1154-E PRSS0004AC-A
Not Available

Abstract: No abstract text available
Text: 2SK1153 , 2SK1154 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , Outline 2SK1153 , 2SK1154 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit 2 S K 1 153 , 1. PW < 1 0 (os, duty cycle < 1% 2. Value at Tc = 25°C 2 HITACHI 2SK1153 , 2SK1154 , V, Rl = 15 £2 1. Pulse test 3 HITACHI 2SK1153 , 2SK1154 Maximum Safe O peration A rea , G ate to Source V oltage V GS (V) Drain Current lD (A) 4 HITACHI 2SK1153 , 2SK1154 S


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PDF 2SK1153, 2SK1154 K1154
2005 - Not Available

Abstract: No abstract text available
Text: 2SK1153-E 2SK1154-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack) Box (Sack) Note , developed or manufactured by or for Renesas Electronics. 2SK1153 , 2SK1154 Silicon N Channel MOS FET , . Drain (Flange) 3. Source S 3 2SK1153 , 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item , ° C 2SK1153 2SK1154 Gate to source voltage Drain current Drain peak current ID 1 Notes , source breakdown voltage 2SK1153 2SK1154 Gate to source breakdown voltage Gate to source leak


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PDF
2005 - Not Available

Abstract: No abstract text available
Text: 2SK1153-E 2SK1154-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack) Box (Sack) Note , developed or manufactured by or for Renesas Electronics. 2SK1153 , 2SK1154 Silicon N Channel MOS FET , . Drain (Flange) 3. Source S 3 2SK1153 , 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item , 2SK1153 2SK1154 Gate to source voltage Drain current Drain peak current ID 1 Notes: 1. PW â , voltage 2SK1153 2SK1154 Gate to source breakdown voltage Gate to source leak current Zero gate


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2SK1158

Abstract: 2sk1299 2SK1341 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152 2SK1151 Hitachi Scans-001
Text: 635 2SK1400A 350 0.6 0.8 2SK1153 450 3 30 2 2.8 2.5 27 50 330 2SK1154 500 2.2 3 , 2SK1151 2SK1152 2SK1153 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541


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PDF CSJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V 2SK440 2SK1158 2sk1299 2SK1341 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152 2SK1151 Hitachi Scans-001
1999 - 2SK2431

Abstract: 2SK1153 2SK1862
Text: - * Pulse Test See characteristics curve of 2SK1153 , 2SK1862. Hitachi Semiconductor


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PDF 2SK2431 220CFM 2SK1153, 2SK1862. 2SK2431 2SK1153 2SK1862
1999 - 2SK1153

Abstract: 2SK1154 2SK1862 2SK1863
Text: - * Pulse Test See characteristic curves of 2SK1153 , 2SK1154 2SK1862, 2SK1863 Power vs


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PDF 2SK1862, 2SK1863 220FM 2SK1862 2SK1153 2SK1154 2SK1862 2SK1863
2sk1197

Abstract: 2SK1202 2SK1159 2SK1158 2SK1157 2SK1156 2SK1155 2SK1154 2SK1153 NEC 2501L
Text: - 88 - f ï R * a « W xl M te (Ta=25t!) a « tt « m m * a » V*»» (») Vgs* (V) x » * I» (A) x 9r * Pd/Pch (W) Igss (max) (A) Id (min) (A) ïs (max) (A) m (typ) (S) K * Vos (V) Vds (V) (min) (V) (max) (V) Vds (V) Id (A) (min) (S) Vds (V) Id (A) 2SK1153 BÄ SW-Reg, DDC MOS N E 450 DSS ±30 S 3 D 30 ±10« ±25 250« 360 2 3 10 lm 1.5 2. 5 10 2 2SK1154 , 10 2 ton=27ns, toff=50nstyp 1D=2A, VDD=30V 116B GDS 2SK1153 330 15 0 10 3 10 2 ton=27ns, toff


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PDF 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1172 2SK1173 50nstyp 2SK1194 2SK1195 2sk1197 2SK1202 2SK1159 2SK1158 NEC 2501L
2SJ113

Abstract: 2cv1 2SK1635 2SK513 2SK1665 2SJ214 2SK1151 GN12030 2SK1153 2SK579
Text: -10W 10-30W 30-50W 50-100W 100-200W 200W Fly-back AC 100-132 V 2SK579 2SK580 2SK1151 2SK1152 2SK1153


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ113 2cv1 2SK1635 2SK513 2SK1665 2SJ214 GN12030
flyback 200w

Abstract: 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
Text: -10W 10-30W 30-50W 50-100W 100-200W 200W Fly-back AC 100-132 V 2SK579 2SK580 2SK1151 2SK1152 2SK1153


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
1999 - Hitachi DSA00279

Abstract: No abstract text available
Text: | Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr See characteristics curves of 2SK1153 , 2SK1862. 2


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PDF 2SK2431 Hitachi DSA00279
1997 - 2SK2431

Abstract: Hitachi DSA001651
Text: (off) ID = 2 A VGS = 10 V RL = 15 1. Pulse Test See characteristics curves of 2SK1153


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PDF 2SK2431 O-220CFM D-85622 2SK2431 Hitachi DSA001651
1998 - Hitachi DSA002781

Abstract: No abstract text available
Text: 2SK1153 , 2SK1154 3 2SK1862, 2SK1863 4 2SK1862, 2SK1863 When using this document, keep the


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PDF 2SK1862, 2SK1863 2SK1862 2SK1863 Hitachi DSA002781
2SK1637

Abstract: 2SK1838 2SK1636 2SK1541 2SK1540 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152
Text: 635 2SK1400A 350 0.6 0.8 2SK1153 450 3 30 2 2.8 2.5 27 50 330 2SK1154 500 2.2 3


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PDF 2SK1338 2SK1807 2SK1668 2SK1762 2SK1862 2SK1863 2SK1626 O-220FM 2SK1627 2SK1566 2SK1637 2SK1838 2SK1636 2SK1541 2SK1540 2SK1316 2SK1315 2SK1314 2SK1313 2SK1152
2SK series

Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
Text: ). 183 2SK1153.


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PDF 2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
MBN300A6

Abstract: flyback 200W UPS schematics DC MOTOR SPEED CONTROL USING IGBT 2SK415 Hitachi Three-Phase Motor Driver 2SK1635 2SK1665 GN12030E 2sk1299
Text: -10W 10-30W 30-50W 50-100W 100-200W 200W Fly-back AC 100-132 V 2SK579 2SK580 2SK1151 2SK1152 2SK1153


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PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E MBN300A6 flyback 200W UPS schematics DC MOTOR SPEED CONTROL USING IGBT 2SK415 Hitachi Three-Phase Motor Driver 2SK1635 2SK1665 2sk1299
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