The Datasheet Archive

2SK1119 datasheet (9)

Part Manufacturer Description Type PDF
2SK1119 Toshiba TRANS MOSFET N-CH 1000V 4A 3TO-220AB Original PDF
2SK1119 Toshiba Power MOSFETs Cross Reference Guide Original PDF
2SK1119 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SK1119 Toshiba Original PDF
2SK1119 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1119 Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1119 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS II 5) Scan PDF
2SK1119 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications Scan PDF
2SK1119(F) Toshiba 2SK1119 - MOSFET N-CH 1000V 4A TO-220AB Original PDF

2SK1119 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
k1119

Abstract: 2SK1119 2-10P1B VDD400 2SK1119-3
Text: 2SK1119 NMOS (-MOS.5) 2SK1119 : mm : RDS ( ON ) = 3.0() : |Yfs| = 2.0S () : IDSS = 300A () (VDS = 800V) : Vth = 1.53.5 V (VDS = 10 VID = 1 mA) (Ta = 25 , 2SK1119 (Ta = 25°C) IGSS , = 4 A, K1119 () No. (: : ) 2 2006-11-09 2SK1119 3 2006-11-09 2SK1119 4 2006-11-09 2SK1119 5 2006-11-09 2SK1119 20070701-JA ·


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PDF 2SK1119 O-220AB SC-46 2-10P1B VDD400 K1119 k1119 2SK1119 2-10P1B 2SK1119-3
Not Available

Abstract: No abstract text available
Text: 2SK1119-1_ 1 99 2 -0 2 -0 1 _ TO SH IB A CORPORATION SEMICONDUCTOR , . UNIT - - 4 12 - 1 .9 A A V IDR = 4A, VGS = 0V - - 2SK1119-2 1992 - 02 - Ö T TO , (V) D R A IN C U R R E N T ID (A) G A T E -S O U R C E V O L T A G E 2SK1119-3 1 9 9 2 -0 2 -0 , SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA 2SK1119 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (7 T- M O S II · 5) ( 2SK1119 ) HIGH SPEED, HIGH C URRENT SW ITC H IN G APPLICATIONS


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PDF 2SK1119 2SK1119) 2SK1119
2002 - Not Available

Abstract: No abstract text available
Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) .5 2SK1119 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance High forward transfer admittance Low , 2SK1119 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Drain cut-off , Marking 2 2002-06-05 2SK1119 3 2002-06-05 2SK1119 4 2002-06-05 2SK1119 5 2002-06-05 2SK1119 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


Original
PDF 2SK1119 O-220AB SC-46 2-10ments,
2SK1119

Abstract: 2-10P1B 2sk111
Text: TOSHIBA_ 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSII-5) 2SK1119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND , Reliability Handbook. 1996-12-01 1/5 TOSHIBA 2SK1119 ELECTRICAL CHARACTERISTICS (Ta = 25 , without notice. 1996-12-01 2/5 TOSHIBA 2SK1119 id - vds id - vds 15 ^10 6.5 common source te = , TOSHIBA 2SK1119 ROSCON) - Te IDR - VDS COMMON SOURCE vGs=iov I D = 4 A


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PDF 2SK1119 2SK1119 2-10P1B 2sk111
2009 - k1119

Abstract: 2-10P1B 2SK1119
Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High , electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK1119 Electrical Characteristics , 2009-09-29 2SK1119 3 2009-09-29 2SK1119 4 2009-09-29 2SK1119 5 2009-09-29 2SK1119 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates


Original
PDF 2SK1119 k1119 2-10P1B 2SK1119
2002 - Not Available

Abstract: No abstract text available
Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance High forward transfer admittance Low , with caution. 1 2002-09-02 2SK1119 Electrical Characteristics (Ta = 25°C) Characteristics , - - Typ. - - - Max 4 12 -1.9 Unit A A V Marking 2 2002-09-02 2SK1119 3 2002-09-02 2SK1119 4 2002-09-02 2SK1119 5 2002-09-02 2SK1119 RESTRICTIONS ON


Original
PDF 2SK1119 O-220ABments,
2006 - k1119

Abstract: No abstract text available
Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications z Low drain-source ON resistance z High forward transfer admittance , . 1 2006-06-28 2SK1119 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage , line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-06-28 2SK1119 3 2006-06-28 2SK1119 4 2006-06-28 2SK1119 5 2006-06-28 2SK1119 RESTRICTIONS ON


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PDF 2SK1119 k1119
2004 - k1119

Abstract: 2SK1119 2-10P1B
Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High , electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK1119 Electrical Characteristics , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK1119 3 2004-07-06 2SK1119 4 2004-07-06 2SK1119 5 2004-07-06 2SK1119 RESTRICTIONS ON


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PDF 2SK1119 k1119 2SK1119 2-10P1B
2006 - K1119

Abstract: 2SK1119 2-10P1B
Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High , device. Please handle with caution. 1 2006-11-09 2SK1119 Electrical Characteristics (Ta = 25 , lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SK1119 3 2006-11-09 2SK1119 4 2006-11-09 2SK1119 5 2006-11-09 2SK1119 RESTRICTIONS ON PRODUCT USE


Original
PDF 2SK1119 K1119 2SK1119 2-10P1B
2007 - K1119

Abstract: 2SK1119 2-10P1B
Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High , electrostatic-sensitive device. Please handle with caution. 1 2006-11-09 2SK1119 Electrical Characteristics , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SK1119 3 2006-11-09 2SK1119 4 2006-11-09 2SK1119 5 2006-11-09 2SK1119 RESTRICTIONS ON


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PDF 2SK1119 K1119 2SK1119 2-10P1B
Not Available

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSII-5) 2SK1119 j , notice. 1998 02-19 - 1/5 TO SHIBA 2SK1119 ELECTRICAL CHARACTERISTICS (Ta = 25 , II > - tv) 4^ COMMON SOURCE T c = 2 5 "C 0 IS J 1 IO u» Ul 2SK1119 TO SHIBA 2SK1119 R d s (ON) - Te IDR - VDS £ < H c o c à ¿ 5 is o Ed (A o CO CAPACITANCE - Vd S , - Tc 1998 02-19 - 4/5 TO SHIBA 2SK1119 rth - W PULSE WIDTH tw (S


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PDF 2SK1119
nsi 60 jg

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-M O S II-5) 2SK1119 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE , d u c t o r R e lia b ilit y H a n d b o o k . 1996-12-01 1/5 T O SH IB A 2SK1119 , c h a n g e w it h o u t n o tic e . 1996 - 12-01 2/5 T O SH IB A 2SK1119 10 , w 2SK1119 T O SH IB A 2SK1119 rth - tv PULSE WIDTH tw (s) DYNAMIC INPUT/OUTPUT


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PDF 2SK1119 300/uA nsi 60 jg
2002 - 2SK1119

Abstract: 2-10P1B
Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications l Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) l , 2SK1119 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , 2002-09-02 2SK1119 3 2002-09-02 2SK1119 4 2002-09-02 2SK1119 5 2002-09-02 2SK1119 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


Original
PDF 2SK1119 2SK1119 2-10P1B
2SK111

Abstract: 24N10 2-10P1B 2SK1119
Text: TOSHIBA_ 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSII-5) 2SK1119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND , information contained herein is subject to change without notice. 1998-07-24 1/5 TOSHIBA 2SK1119 , ) 1998-07-24 2/5 TOSHIBA 2SK1119 id - VDS id - VDS COMMON SOURCE Te = 25°C i5 y , TOSHIBA 2SK1119 RDS(ON) - Te IDR - VDS COMMON SOURCE VGS


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PDF 2SK1119 2SK111 24N10 2-10P1B 2SK1119
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SK1119 Field Effect Transistor Silicon N Channel MOS Type (n-MOS II) 1 0 .3 M AX >3.6 ± , TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 217 2SK1119 Discrete Semiconductors E le c tric a , TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. Discrete Semiconductors 2SK1119 id 6.5 vo s , 2SK1119 Discrete Semiconductors R l)S (O N ) - Tc < IDR - VDS a a £ FZ W os en o w , . Discrete Semiconductors 2SK1119 r th - Lv, DYNAMIC I N P U T / O U T P U T CH ARA CTERISTICS


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PDF 2SK1119
Not Available

Abstract: No abstract text available
Text: 2SK1119 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSII-5) 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC , notice. 1998 07-24 - 1/5 2SK1119 TOSHIBA ELECTRICAL CHARACTERISTICS (Ta = 25 , Number of the Christian Era) 1998 07-24 - 2/5 2SK1119 TOSHIBA id - vos < id - , 2SK1119 TOSHIBA rth — tw PULSE WIDTH tw (s) DYNAMIC INPUT/OUTPUT CHARACTERISTICS TTTT


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PDF 2SK1119 20kil)
K1118

Abstract: k1118 transistor MOSFET transistor k1118 transistor k1118 2SK1603 2SK1723 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
Text: 2SK1119 (3.8] 2SK1359(3.8] 2SK1489(1.0] A 2SK1531 [0.45] A 2SK1745[0.36] A 2SK2057[0.29] A 2SK1544


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PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1723 2SK1769 2SK1603 2SK1356 2SK1767 2SK1913 K1118 k1118 transistor MOSFET transistor k1118 transistor k1118 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 2sk16 MOSFET 2SK1358 Transistor Guide toshiba transistor smd code 2sk1358 2SK2038
Text: 2SK2038[2.2] A 2SK1362[2.5] · A 2SK1119 [3.8] 2SK1359[3.8] 2SK1365[1.8] 2SK1120[1.8] A 9 TO


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PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 2sk16 MOSFET 2SK1358 Transistor Guide toshiba transistor smd code 2sk1358 2SK2038
k1119

Abstract: transistor k1119 power switching
Text: FIELD EFFECT TRAN SISTO R SILICON N CHANNEL MOS TYPE (a:-MOSii) 2SK1119 INDUSTRIA L APPLICATIO NS U n i t in m m 10.3MAI. *3.6±0.2 HIGH S P EE D ,H IG H CURRENT SWITCHING A P P LIC ATIO N S. SWITCHING POWER SUPPLY A PP LIC ATIO NS. îï FEATURES: · Low D ra in -S o u r c e ON R e s is ta n c e : · H i g h Forward T r a n s f e r Adm ittance : · Low Leakage C u rre n t : · Enhancement-Hode : R D S ( 0 N ) = 3 .O f l ( T y p . ) I Y f s l = 2 . OS ( T y p . ) I DSS= 3 0 0 , u A ( H a x . ) §


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PDF 2SK1119 Puls700 k1119 transistor k1119 power switching
2SK2056

Abstract: 2SK1603 2SK1358 2SK1601 2sk2039 2SK1692 2sk231 2sk2077 2SK2222
Text: 2SK1358 2SK1119 2SK1930 2SK1359 2SK1365 2SK1120 2SK1489 < 0 (A) 5 2.8 3 3 4 5 5 5 7 7 9 8.5 2.5 3 5 5 5 5


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PDF 2SK2274 2SK1602 2SK1600 2SK1858 2SK2056 2SK2089 2SK2038 2SK2222 2SK2077 2SK2319 2SK2056 2SK1603 2SK1358 2SK1601 2sk2039 2SK1692 2sk231 2sk2077
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: 2SJ509 2SJ511 2SJ512 2SJ513 2SJ514 2SJ515 2SJ516 2SJ525 2SJ537 2SK1119 2SK1120 2SK1359 , 2SJ507 2SJ508 2SJ509 2SJ511 2SJ512 2SJ513 2SJ514 2SJ515 2SJ516 2SJ525 2SJ537 2SK1119 2SK1120 , Replacement 2SK2382 A 2SK2965 A 2SK1119 B 2SK2603 B 2SK2603 B 2SK2399 B 2SK2231 2SK2231 2SK2314 , 2SK2385 2SK2232 2SK2385 2SK1119 2SK2466 2SK2314 YTA640 YTA640 2SK2385 2SK2385 2SK2312 2SK2603 , -8(Dual) SOP-8(P&N) SOP-8(Dual) Toshiba Note Replacement 2SK2661 A 2SK2661 A 2SK1119 A


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
2SJ239

Abstract: 2SK2030 2SJ201Y 2sk1 2SK2200TP 2sk1544 2SK2057 2SJ201-Y 2SK1079 2SJ238
Text: MOSFET Characteristic Chart M axim u m R ating Type No. P ackag e Id |Am ps| V oss R d s (ON) TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n [Volts] Pd [W atts] 2SJ147 2SJ201-Y 2SJ238(TE12L) 2SJ239 2SJ239(LB) 2SJ240 2SJ241(SM) 2SJ312(SM) 2SK1078(TE12L) 2SK1079(TE12L) 2SK1112(LB,STA1) 2SK1113 2SK1118 2SK1119 2SK1120 2SK1345 2SK1346 2SK1348 2SK1356 2SK1358 2SK1359 2SK1362 2SK1363 2SK1365 2SK1380 2SK1488 2SK1489 2SK1530-Y 2SK1531 2SK1544 2SK1641 2SK1653


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PDF 2SJ147 2SJ201-Y 2SJ238 TE12L) 2SJ239 2SJ240 2SJ241 2SJ312 2SK1078 2SK2030 2SJ201Y 2sk1 2SK2200TP 2sk1544 2SK2057 2SK1079
2SK2056

Abstract: 2SK2056 equivalent 2SK1117 2SK2107 2SK1855 2SK1915 2sk1722 2SK1119 equivalent 2SK1719 2SK1574
Text: 2SK1574 2SK1855 2SK858 2SK1117 2SK1600 2SK2056 2SK1643 2SK1119 0.035 0.045 0.036 0.046 0.022 0.030


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PDF O-220 T0-220 2SJ224 2SJ312 2SJ241 2SK2311 2000pcs 2SK2228 2SK2229 2SK2056 2SK2056 equivalent 2SK1117 2SK2107 2SK1855 2SK1915 2sk1722 2SK1119 equivalent 2SK1719 2SK1574
buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Text: ,02 1,9 0,4 T092 SUP70N06-14 60 70 0,014 142 T0247 VN10KM 60 0,31 5 1 T0237 2SK1119 100 4 3,8 100


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PDF 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 OT103 BF996 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
2SK2056

Abstract: 2SK1349 2SK1603 2sk1601 2SK1363 2SK1344 2SK1768
Text: Power M O S FET (jt-MOS I!-5) F1 Maximum Rating Application Type No. Id (A) ·2SK2274 2SK1602 2SK1600 2SK1858 2SK2056 2SK2089 2SK2038 2SK2222 2SK2077 2SK2319 2SK2078 2 SK 2 3 2 0 2SK1603 2SK1601 2SK1643 2SK1929 2SK1357 2SK2039 2SK1692 2SK1363 2SK1358 2SK1119 2SK1930 2SK1359 2 SK 1 3 6 5 2SK1120 2SK1489 5 2.8 3 3 4 5 5 5 7 7 9 8.5 2.5 3 5 5 5 5 7 8 9 4 4 5 7 8 12 V d s s (V) 700 800 800 800 800 800 800 800 800 800 800 800 900 900 900 900 900 900 900 900 900 1000 1000 1000 1000 1000 1000 P d (W) 45


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PDF 2SK2274 2SK1602 2SK1600 2SK1858 2SK2056 2SK2089 2SK2038 2SK2222 2SK2077 2SK2319 2SK1349 2SK1603 2sk1601 2SK1363 2SK1344 2SK1768
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