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2SK1092 datasheet (1)

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2SK1092

Abstract: 2SK666
Text: 2SK1092 SINGLE GATE GaAs MES FET VHF/UHF WIDE BAND AMPLIFIER Preliminary OUTLINE DRAWING 1.8 Z ;£T rJ = m 0~0 1 ;ä : (MPAK-4) I ABSOLUTE MAXIMUM RATINGS (To-25*C ) 1· 2. 3. 4. Source G ate NC D rain (Dim ensions in mra) Item Drain to Source Voltage Gate to Source Voltage Drain Current Channel Dissipation Channel Temperature Storage Temperature Symbol Vos Vcs h 2SK1092 4 r t, T.U -3 150 150 125 - 5 5 - +125 Unit V V mA mW *C ·c MAXIMUM CHANNEL


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PDF 2SK1092 To-25 -20mA, 50MHz --900MHz 2SK666 2SK1092 2SK666
2SK66

Abstract: No abstract text available
Text: 2SK1092 SINGLE GATE GaAs M ES FET VHF/UHF W IDE BAND AMPLIFIER OUTLINE DRAWING I - Preliminary SIE D MMTbEQS 0011700 071 HITM HITACHI/( OPTOELECTRONICS) A B S O L U T E M AXIMUM R A T IN G S Item Drain to Source Voltage Gate to Source Voltage Drain Current Channel Dissipation Channel Temperature Storage Temperature Symbol Vos VGS h ( T à - 25°C) 2SK1092 4 Pc* r«* r,. -3 150 150 125 - 5 5 -+ 1 2 5 Unit V V mA mW MAXIMUM CHANNEL


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PDF 2SK1092 d--20mA, -20mA, /-50M /c--20mA, /-900M 2SK66
Not Available

Abstract: No abstract text available
Text: 2SK1092 Transistors N-Channel UHF/Microwave MESFET V(BR)DSS (V)4.0 V(BR)GSS (V)3.0 I(D) Max. (A)150m P(D) Max. (W)150m Maximum Operating Temp (øC)125 I(DSS) Min. (A)20m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.50m g(fs) Max; (S) Trans. conduct;85m @V(DS) (V) (Test Condition)3.0 @I(D) (A) (Test Condition)20m V(GS)off Max. (V) @V(DS) (V) (Test Condition) Power Gain Min. (dB)6.5 @V(DD) (V) (Test Condition)2.0 @I(D) (A


Original
PDF 2SK1092
2SK1073

Abstract: lm815 2SK1074 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1100 2SK1084
Text: ±20 500x1 150 2. 5 VGS lm 9 18 25 7.5 2SK1092 HS v/uhf a GaAs/MES N D 4 DS -3 150m D 150» -100 m -3 20m , . PG=10dBtyp f=50MHz 199C 2SK666 chip 2SK1092 400 60 0 10 0. 15 10 5 ton=60ns, toff=230nstyp ID


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PDF 2sk1069 2sk1070 2sk1073 2SK1074 2sk1078 130nstyp 2SK1096 120nstyp VDD-30V 2SK1097 2SK1073 lm815 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1100 2SK1084
2SK1845

Abstract: 2SK408 equivalent 3sk85 transistor bf 175 2SC3511 2sc464 3SK103 3SK228 3sk217 3sk156
Text: . 317 2SK1092 MPAK-4 RF Wide Band Low Noise Amplifier , 2SK779 Ceramic A Gate Source Drain Source 2SK1092 MPAK-4 XE- Source


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PDF ADE-41 D-8013 2SK1845 2SK408 equivalent 3sk85 transistor bf 175 2SC3511 2sc464 3SK103 3SK228 3sk217 3sk156
transistor SMD s72

Abstract: nec mys 501 MYS 99 st MYS 99 102 transistor 8BB smd kvp 81A kvp 81A DIODE Kvp 69A smd transistor A7p kvp 86a
Text: No file text available


Original
PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 st MYS 99 102 transistor 8BB smd kvp 81A kvp 81A DIODE Kvp 69A smd transistor A7p kvp 86a
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