The Datasheet Archive

2SK1064 datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
2SK1064 2SK1064 ECAD Model Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SK1064 2SK1064 ECAD Model Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF
2SK1064 2SK1064 ECAD Model Others MOSFETs Scan PDF
2SK1064 2SK1064 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK1064 2SK1064 ECAD Model Others FET Data Book Scan PDF
2SK1064 2SK1064 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF

2SK1064 Datasheets Context Search

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KDS 1M

Abstract: kds 9a 2SK1063 2SK1064 KDS 5M HITACHI 2SK* TO-3 Hitachi Scans-001 kds 8a
Text: 2SK1064 Unit Drain-Source Voltage Voss 450 500 V Gate-Source Voltage Voss ±20 V Drain Current Id 15 , Drain-Source Breakdown Voltage V<ßR) i>ss /o-lOmA, Vt,s = 0 2SK1063 450 - - V 2SK1064 500 Gate-Source , -0 2SK1064 Gate-Source Cutoff voltage Vc S < c//i /„-ImA, Vds-10V 2.0 - 4.0 V Static Drain-Source on State Resistance RoSio«) Id — 8A, VOS-10V* 2SK1063 - 0.25 0.36 n 2SK1064 - 0.3 0.4 Forward , , 2SK1064 - ■i ÜÜ1317M ITb ■HITU HITACHI/COPTOELECTRONICS) blE ]> AREA OF SAFE OPERATION TYPICAL


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PDF To-25 2SK1063 2SK1064 Tc-25 2SK1063, 001317b KDS 1M kds 9a KDS 5M HITACHI 2SK* TO-3 Hitachi Scans-001 kds 8a
A35V

Abstract: 2SK1063 2SK1064 HITACHI 2SK* TO-3 kds 9a
Text: ) (Dimensions in nun) (JEDEC TO-3) ¡ABSOLUTE MAXIMUM RATINGS (To-25"C) Item Symbol 2SK1063 2SK1064 Unit , ) i>ss /o-lOmA, Vt,s = 0 2SK1063 450 - - V 2SK1064 500 Gate-Source Breakdown Voltage V(BR>GSS /t , Voltage Drain Current Ids s KDS-360V, Vgs-0 2SK1063 - - 250 M Vos-400V, Vos-0 2SK1064 Gate-Source , «) Id — 8A, VOS-10V* 2SK1063 - 0.25 0.36 n 2SK1064 - 0.3 0.4 Forward Transfer Admittance 1 V/J Id , 2SK1063, 2SK1064 ■i 44TL.2GS ÜÜ1317M ITb «HITU HITACHI /(OPTOELECTRONICS) blE ]> AREA OF SAFE


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PDF To-25 2SK1063 2SK1064 Tc-25 2SK1063, 001317b A35V HITACHI 2SK* TO-3 kds 9a
2SK1045

Abstract: 2SK1048 2sk1050 2SK1044 2SK1060 2sk1039 2SK1047 2SK1046 2SK1043 2SK1042
Text: « 2SK1063 HjÏ HS PS* MOS » E 450 DSS ±20 s 15 D 125 ±10/1 ±16 250« 360 2 4 10 1« 8 13 10 8 2SK1064 , =145ns, toff=320nstyp 1D=8A. VDD=30V 28B GSD 2SK1064 4 0. 04 0 5 3. 5 6 100M PG=24dBtyp MOOMHz 255A DGS


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PDF 2SK1037 2SK1038 2SK1039 2SK1040 2SK1041 140nstyp 276/Z: 2SK1059 1059-Z 140nstyp 2SK1045 2SK1048 2sk1050 2SK1044 2SK1060 2SK1047 2SK1046 2SK1043 2SK1042
2SK1202

Abstract: 2SK1620 2SK1335 2SK1334 2SK1327 2SJ186 2SJ181 2SJ169 2SJ130 2SK559
Text: 13 145 320 2950 2SK1064 - 500 0.3 0.4 Notes : * : Value at Tc = 25°C ♦* : Test


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PDF 2SK1334 2SJ186 2SJ130 2SK1202 2SK1203 2SK1204 2SK696 2SK1205 2SK1225 2SK1206 2SK1620 2SK1335 2SK1327 2SJ181 2SJ169 2SK559
icf a 2025

Abstract: 2SK1979 2SK1661 2SK1969-01 2SK1815 2SK1388 2SK1969 2sk280 2SK1816 2SK1065M
Text: 3900 _ 1200 1200 ¿30 230 850 2SK1064 100 5 . 20 0.700 0.500 450 100 53 86 TQ22QF 2SK1816 100 20


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PDF VGS-10V 2SK1822-01M T0220F15 2SK1823-01 T03PF 2SK1969-01 25K1505M 2SK2046 -s-50 2SK1661 icf a 2025 2SK1979 2SK1815 2SK1388 2SK1969 2sk280 2SK1816 2SK1065M
Not Available

Abstract: No abstract text available
Text: 2SK1064 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V)4.0 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition)10 @I(D) (A) (Test Condition)1m I(DSS) Max. (A)250u @V(DS) (V) (Test


Original
PDF 2SK1064
2SJ127

Abstract: 2SK1275 HA11511CNT 2SK1202 2SK557 2sc2610 2SK551 2SK296 2SC4828 2SK1232
Text: ±20 15 125 0.25 0.36 13 145 320 2950 2SK1064 - 500 0.3 0.4 Notes : * : Value at Tc = 25°C â


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PDF 2SC2610 2SC2611 2SC4828 2SC26U 2SK296 2SJ127 2SK1275 HA11511CNT 2SK1202 2SK557 2sc2610 2SK551 2SK1232
2sk1299

Abstract: 2SK513 2SK1665 2SK1231 2SK1202 2SK1153 2SK1152 2SK1151 2SK1063 2SJ127
Text: - 1000 5 1.5 2 3.5 260 430 1800 TO-3 2SK1063 450 ±20 15 125 0.25 0.36 13 145 320 2950 2SK1064


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1665 2SK1231 2SK1202 2SK1063 2SJ127
200W MOSFET POWER AMP

Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1225 2SK1327 2SK1153 2SK296 2SK513 2SK1635
Text: 13 145 320 2950 2SK1064 - 500 0.3 0.4 Notes : * : Value at Tc = 25°C ♦* : Test


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 200W MOSFET POWER AMP HA11511CNT 2sk mosfet 2sc2610 2SK1225 2SK1327 2SK296 2SK513 2SK1635
2SK1275

Abstract: 4AK16 4AK15 2SK975 2SK973 2SK972 2SK971 2SK970 6am12 2SK554
Text: 430 1800 TO-3 2SK1063 450 ±20 15 125 0.25 0.36 13 145 320 2950 2SK1064 - 500 0.3 0.4


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PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AK16 2SK975 2SK973 2SK972 2SK971 2SK970 6am12 2SK554
2SK1045

Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2sd2498 2SK1011 2SD373 2SD299 2SD300
Text: ICBO ICEX: h FE: 80 IC: .10M V CE: Case Style: STI Type: 2SK1064 Notes: Breakdown Voltage: 500 , : TO-204AA/TO-3 Polarity: Industry Type: 2SK1064 STI Type: 2SK1074 Notes: Breakdown Voltage: 600


Original
PDF 2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2sd2498 2SK1011 2SD373 2SD299 2SD300
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
2sk 100a

Abstract: 2SK1063
Text: 2SK1063, 2SK1064blE » MMÌbEOS G Ü 13173 T 3 T SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. 2. 3. Gate Source Drain (C ase) (Dimensions in nun) IH I T 4 HITACHI/(OPTOELECTRONICS) (JE D E C T O -3 ) IABSOLUTE MAXIMUM RATINGS (To=25°C) Ite m D r a in - S o u r c e V o lta g e G a te - S o u r c e V o lta g e D ra in C u r r e n t D ra in P e a k C u r r e n t B o d y -D ra in D iode lok R e v e r s e D ra in C u r r e n t C h an n e l D is sip a tio n C h an n el T e m p e r


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PDF 2SK1063 2SK1064blE 001317b 2sk 100a
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