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2SK1056 datasheet (11)

Part ECAD Model Manufacturer Description Type PDF
2SK1056 2SK1056 ECAD Model Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
2SK1056 2SK1056 ECAD Model Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
2SK1056 2SK1056 ECAD Model Hitachi Semiconductor Mosfet Guide Original PDF
2SK1056 2SK1056 ECAD Model Renesas Technology Silicon N Channel MOS FET Original PDF
2SK1056 2SK1056 ECAD Model Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SK1056 2SK1056 ECAD Model Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF
2SK1056 2SK1056 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
2SK1056 2SK1056 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1056 2SK1056 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SK1056 2SK1056 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK1056 2SK1056 ECAD Model Others FET Data Book Scan PDF

2SK1056 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 2SK1058

Abstract: 2SK135 audio amplifier 2sk135 audio application 2sk135 application 2sk135 2SK134 2SK133 2SK1057 2sk1058 equivalent 2sk1058 2sj162
Text: 2SK1056 , 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application TO­3P Low frequency power , - Drain to source voltage 2SK1056 VDSX - 120 V - 2SK1057 140 , - * Value at TC = 25 °C 2SK1056 , 2SK1057, 2SK1058 Table 2 Electrical Characteristics (Ta = , - Drain to source breakdown voltage 2SK1056 V(BR)DSX - 120 - - V , - * Pulse Test 2SK1056 , 2SK1057, 2SK1058 Maximum Safe Operation Area Power vs


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PDF 2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 2SK1057 2SK1058 2SK135 audio amplifier 2sk135 audio application 2sk135 application 2sk135 2SK134 2SK133 2SK1057 2sk1058 equivalent 2sk1058 2sj162
2000 - 2SK1058

Abstract: 2sk1058 equivalent transistor 2sj162 Hitachi 2SJ 2SK1057 2SK1056 2SJ162 2SJ161 2SJ160 specification of 2SK1058
Text: 2SK1056 , 2SK1057, 2SK1058 Silicon N-Channel MOS FET ADE-208-1244 (Z) 1st. Edition Mar. 2001 , power amplifier 2SK1056 , 2SK1057, 2SK1058 Outline TO-3P D 1 G 2 3 1. Gate 2 , source voltage 2SK1056 Ratings Unit VDSX 120 V 2SK1057 140 2SK1058 160 , at TC = 25°C 2SK1056 , 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1056 V(BR)DSX 120 breakdown voltage 2SK1057 Max Unit


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PDF 2SK1056, 2SK1057, 2SK1058 ADE-208-1244 2SJ160, 2SJ161 2SJ162 2SK1058 2sk1058 equivalent transistor 2sj162 Hitachi 2SJ 2SK1057 2SK1056 2SJ162 2SJ160 specification of 2SK1058
1997 - Hitachi DSA002712

Abstract: 2sk1058
Text: 2SK1056 , 2SK1057, 2SK1058 Silicon N-Channel MOS FET November 1996 Application Low frequency , TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK1056 , 2SK1057, 2SK1058 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage , Drain to source breakdown voltage Symbol Min 2SK1056 V(BR)DSX 2SK1057 2SK1058 Gate to source breakdown , MHz 2 2SK1056 , 2SK1057, 2SK1058 Power vs. Temperature Derating 150 Channel Dissipation Pch (W


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PDF 2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 Hitachi DSA002712 2sk1058
2SK1058

Abstract: 2SJ162 2sk1058 2SJ162 2SK1056 2SJ160 2SJ161 2SK1057 Hitachi Scans-001
Text:  2SK1056 , 2SK1057, 2SK1058 Silicon N-Channel MOS FET HITACHI November 1996 Application Low , Its Respective Manufacturer 2SK1056 , 2SK1057, 2SK1058 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage 2SK1056 ^DSX 120 V 2SK1057 140 2SK1058 , ) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK1056 breakdown voltage V 120 v (BR)DSX , of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer 2SK1056 , 2SK1057


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PDF 2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 2SK1058 2SJ162 2sk1058 2SJ162 2SK1056 2SJ160 2SK1057 Hitachi Scans-001
2005 - 2SK1058

Abstract: 2SK1058-E transistor 2sj162 2SJ160 2SJ161 2SJ162 2SK1057 PRSS0004ZE-A SC-65 REJ03G0906-0200
Text: Container 2SK1056-E 2SK1057-E 360 pcs 360 pcs Box (Tube) Box (Tube) 2SK1058-E 360 pcs , 2SK1056 , 2SK1057, 2SK1058 Silicon N Channel MOS FET REJ03G0906-0200 (Previous: ADE , 1 of 5 2 3 2SK1056 , 2SK1057, 2SK1058 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSX 2SK1056 Ratings 120 2SK1057 2SK1058 Unit V 140 , °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK1056 Symbol V(BR


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PDF 2SK1056, 2SK1057, 2SK1058 REJ03G0906-0200 ADE-208-1244) 2SJ160, 2SJ161 2SJ162 PRSS0004ZE-A 2SK1058 2SK1058-E transistor 2sj162 2SJ160 2SJ162 2SK1057 PRSS0004ZE-A SC-65 REJ03G0906-0200
2005 - 2SK1058

Abstract: 2SK1058-E transistor 2sj162 2SK1057 2SK1056 2SJ162 2SJ161 2SJ160 SC-65 PRSS0004ZE-A
Text: Container 2SK1056-E 2SK1057-E 360 pcs 360 pcs Box (Tube) Box (Tube) 2SK1058-E 360 pcs , . 2SK1056 , 2SK1057, 2SK1058 Silicon N Channel MOS FET REJ03G0906-0200 (Previous: ADE-208-1244) Rev , 1 of 5 2 3 2SK1056 , 2SK1057, 2SK1058 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSX 2SK1056 Ratings 120 2SK1057 2SK1058 Unit V 140 , °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK1056 Symbol V(BR


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2005 - Not Available

Abstract: No abstract text available
Text: Part Name Quantity Shipping Container 2SK1056-E 2SK1057-E 360 pcs 360 pcs Box (Tube , developed or manufactured by or for Renesas Electronics. 2SK1056 , 2SK1057, 2SK1058 Silicon N Channel MOS , . Source (Flange) 3. Drain G S 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 2SK1056 , 2SK1056 Ratings 120 2SK1057 2SK1058 Unit V 140 160 Gate to source voltage Drain , °C) Item Drain to source breakdown voltage 2SK1056 Symbol V(BR)DSX 2SK1057 2SK1058 Min 120


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1999 - 2SK1058

Abstract: Hitachi 2SJ Hitachi DSA002780 HITACHI 2sk1058
Text: 2SK1056 , 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier , with gate protection diodes Suitable for audio power amplifier 2SK1056 , 2SK1057, 2SK1058 Outline , °C) Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage Drain current Body to drain , to +150 Unit V V A A W °C °C 2 2SK1056 , 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1056 V(BR)DSX 2SK1057 2SK1058 Gate to


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PDF 2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 2SK1058 Hitachi 2SJ Hitachi DSA002780 HITACHI 2sk1058
1999 - specification of 2SK1058

Abstract: 2sk1058 2SJ162 transistor 2sj162 2sk1058 equivalent 2SK1058 SAT-12 Hitachi DSA00336 2SJ161 2SJ162 2SK1056
Text: 2SK1056 , 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier , characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SK1056 , 2SK1057 , Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1056 Ratings Unit , Tstg ­55 to +150 °C Note: 2 1. Value at TC = 25°C 2SK1056 , 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1056 V(BR)DSX 120


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PDF 2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 specification of 2SK1058 2sk1058 2SJ162 transistor 2sj162 2sk1058 equivalent 2SK1058 SAT-12 Hitachi DSA00336 2SJ162 2SK1056
k 1058

Abstract: K1058 2sk1058 K1057 Hitachi 2SJ
Text: 2SK1056 ,2SK1057, 2SK1058 Silicon N-Channel MOS FET HITACHI Application Low frequency pow er , 177 2SK1056 ,2SK1057,2SK1058 Outline ! TO-3P D 1 UJ 2 m 3 1. Gate 2. Source , c HITACHI 178 _ 2SK1056 , 2SK1057,2SK1058 Electrical , , f = 1 MHz VD D = 20 V, |D = 4 A, HITACHI 179 2SK1056 ,2SK1057,2SK1058 Power vs , 180 2SK1056 ,2SK1057,2SK1058 Drain to Source Saturation Drain to Source Voltage vs. Drain to


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PDF 2SK1056 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1057 k 1058 K1058 2sk1058 K1057 Hitachi 2SJ
Not Available

Abstract: No abstract text available
Text: 2SK1056 , 2SK1057, 2SK1058 Silicon N-Channel MOS FET HITACHI November 1996 Application Low , €¢ Suitable for audio power amplifier Outline (Flange) 3. Drain 2SK1056 , 2SK1057, 2SK1058 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Unit ^D S X 2SK1056 , ) Item Sym bol Drain to source breakdown voltage 2SK1056 Min ^ (B R )D S X 2SK1057 , . Pulse test 2 HITACHI V D = 20 V, lD= 4 A, D 2SK1056 , 2SK1057, 2SK1058 P o w er vs. T e m p


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PDF 2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056
2000 - transistor 2sj162

Abstract: 2sk1058 2SJ162 2SJ160 2SJ161 2SJ162 2SK1056 2SK1057 2SK1058 Hitachi 2SJ
Text: products contained therein. 2SK1056 , 2SK1057, 2SK1058 Silicon N-Channel MOS FET ADE-208-1244 (Z , protection diodes Suitable for audio power amplifier 2SK1056 , 2SK1057, 2SK1058 Outline TO-3P D 1 , °C) Item Symbol Drain to source voltage 2SK1056 Ratings Unit VDSX 120 V 2SK1057 , Note: 2 1. Value at TC = 25°C 2SK1056 , 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1056 V(BR)DSX 120 breakdown voltage 2SK1057 Max


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2SK1045

Abstract: 2SK1048 2sk1050 2SK1044 2SK1060 2sk1039 2SK1047 2SK1046 2SK1043 2SK1042
Text: ±30 lm 450 2 3 10 lm 0. 6 1. 2 10 0.5 2SK1056 BjÏ LF PA MOS N E 120 DSX ±15 s 7 D 100 0.15 1.45 , GDS 2SK1056 600 10 -5 10 2SJ61 149 GDS 2SK1057 600 10 -5 10 2SJ62 149 GDS 2SK1058


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PDF 2SK1037 2SK1038 2SK1039 2SK1040 2SK1041 140nstyp 276/Z: 2SK1059 1059-Z 140nstyp 2SK1045 2SK1048 2sk1050 2SK1044 2SK1060 2SK1047 2SK1046 2SK1043 2SK1042
Not Available

Abstract: No abstract text available
Text: 2SK1056 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V) V(BR)GSS (V)15 I(D) Max. (A)7 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V)1.45 V(GS)th (V) (Min)0.15 @(VDS) (V) (Test Condition)10 @I(D) (A) (Test Condition)100m I(DSS) Max. (A) @V(DS) (V) (Test


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PDF 2SK1056
2SJ56 2sk176

Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
Text: TO-3P-FM 2SK1056 2SJ160 120* ± 15 7 100 1 1.7 1 180/230 60/110 600/900 3/2 2SK1057 2SJ161 140


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PDF 2SC2610 2SC2611 2SC4828 2SC26U 2SK296 2SJ56 2sk176 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
1998 - HITACHI 2SJ162

Abstract: Hitachi 2SJ Hitachi DSA002779 2SJ162 2sk1058 2SJ162
Text: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056 , 2SK1057 and 2SK1058 Features · · · · · · · Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ160 2SJ161 2SJ162 Gate to source


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PDF 2SJ160, 2SJ161, 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160 HITACHI 2SJ162 Hitachi 2SJ Hitachi DSA002779 2SJ162 2sk1058 2SJ162
2SJ56 2sk176

Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SK1058 MOSFET 2SJ56 HITACHI
Text: 800 7 2SK259 _ 350 5 125 25 3 1 25 140 800 7 2SK260 400 TO-3P-FM 2SK1056 2SJ160 120


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PDF 2SK176 2SJ56 2SK220 2SK221 2SK258 2SK259 2SK260 2SK1056 2SJ56 2sk176 2sJ50 mosfet Hitachi 2sk176 2sj56 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SK1058 MOSFET 2SJ56 HITACHI
Not Available

Abstract: No abstract text available
Text: 2SJ160,2SJ161,2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056 , 2SK1057 and 2SK1058 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline Absolute Maximum Ratings (Ta = 25


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PDF 2SJ160 2SJ161 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160, 2SJ161, 2SJ160
2SJ162

Abstract: 2SJ160 KC510 2SK1058 2SK1057 2SK1056 T160 2SJ161 25J160 25J16
Text: HITACHI 2SJ160,2SJ161,2SJ162 SILICON P-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SK1056 , 2SK1057 and 2SK1058 ■FEATURES • Good Frequency Characteristic • High Speed Switching • Wide Area of Safe Operation • Enhancement-Mode • Good Complementary Characteristics • Equipped with Gate Protection Diodes • Suitable for Audio Power Amplifier «ABSOLUTE MAXIMUM RATINGS (Ta-25"C) •Value al Tc-25'C ELECTRICAL CHARACTERÉSTICS (Ta = 25°C) 1. Onte 1


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PDF 2SJ160 2SJ161 2SJ162 2SK1056, 2SK1057 2SK1058 Ta-25 Tc-25 25J160 2SJ162 KC510 2SK1058 2SK1056 T160 25J16
"Audio Power Amplifier"

Abstract: Hitachi 2SJ
Text: 2SJ160,2SJ161,2SJ162 Silicon P-Channel MOS FET HITACHI Application Low frequency power amplifier Complementary pair with 2SK1056 , 2SK1057 and 2SK1058 Features · · · · · · · Good frequency characteristic High speed switching W ide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 159 2SJ160, 2SJ161,2SJ162 Outline TO-3P 1. Gate 2. Source (Flange) 3. Drain Absolute Maximum Ratings (Ta = 25


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PDF 2SJ160 2SJ161 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160, "Audio Power Amplifier" Hitachi 2SJ
2SK series

Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
Text: . 171 2SK1056.


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PDF 2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
2SH14

Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
Text: POWER G eneral amplifier Package code to MOS Package code FET Ratings tD (VdsxKV) (A) (120) 7 (140) 7 (160) 8 180 8 200 8 Voss Type No. - tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 Ratings Vos* j 10 (Vosx)(V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO»® Ciss Status (S itili. 150m 10 10 O 1.0 900 1.0 1.0 1.0 900 O 1.0 1.0 900 a 1.0 - 1000 1.0 1000 - Typa No. ü o o TO-3P 2SK1056 2SK1087 2SK1058 2SK2220 2SK2221 t


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PDF 2SK1197 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 2SK1056 2SK1087 2SK1058 2SK2220 2SH14 2SH21 2SH11 2SH19 6AM13 4AK19
1999 - 2sj162

Abstract: hitachi audio power amplifier HITACHI 2SJ162 2SK1058 2SJ160 Hitachi 2SJ Hitachi DSA002756 2SK1057 hitachi all fet audio application
Text: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056 , 2SK1057 and 2SK1058 Features · · · · · · · Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier Outline 2SJ160, 2SJ161, 2SJ162 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ160 2SJ161 2SJ162 Gate to


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PDF 2SJ160, 2SJ161, 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160 2sj162 hitachi audio power amplifier HITACHI 2SJ162 2SK1058 Hitachi 2SJ Hitachi DSA002756 hitachi all fet audio application
transistor 2SB618

Abstract: 3A/fllnm 80
Text: 2SK1056 N 100 0.02 0.4 0.5 30 TO-220 160 0.5 30 TO-220 50 1.2-14mA


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PDF 2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80
1998 - 2sj162

Abstract: Hitachi 2SJ Hitachi DSA002751
Text: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056 , 2SK1057 and 2SK1058 Features · · · · · · · Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta =


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PDF 2SJ160, 2SJ161, 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160 2sj162 Hitachi 2SJ Hitachi DSA002751
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