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2SJ77(K) datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
2SJ77K 2SJ77K ECAD Model Hitachi Semiconductor Silicon P-Channel MOSFET Scan PDF
2SJ77(K) 2SJ77(K) ECAD Model Others FET Data Book Scan PDF
2SJ77K 2SJ77K ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2SJ77K 2SJ77K ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SJ77K 2SJ77K ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF

2SJ77(K) Datasheets Context Search

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2SJ72

Abstract: 2SJ82 2SJ96 2SJ99 2SJ83 2SJ92 2SJ73 2SJ90 2SK146 2SJ75
Text: =0 2SK214 116A GSD 2SJ77 120 4.8 -10 VDS(sat)=-2Vmax ID=-10mA, VGD=0 116A GDS,ft# 2SJ77 2SJ77 ( K , - 16 - Sí g í± S m ü ffi ig f t ? h =E 1 K aï ^ /E] Í& 1 S B (1 tí (Ta , 2SJ77 Bit LF D, HS PSW MOS P E -160 DSX ±15 s -500m D 30 -0. 2 -1. 5 -10 -10m 20m 35m -20 -10m 2SJ77 CK) B iL HF PA. HS PSW MOS P E -160 DSX ±15 s -500m D 30 -0. 2 -1.5 -10 -10m 20m 35m -20 , -10m 2SJ79( K ) H iL HF PA. HS PSW MOS P E -200 DSX ±15 s -500m G 30 -0.2 -1. 5 -10 -10m 20m 35m


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PDF 2SJ69 2SJ70 -10/U 2SJ72 2SJ73 2SJ74 RH2SJ109, 2SJ90 460pFtyp 2SJ115 2SJ82 2SJ96 2SJ99 2SJ83 2SJ92 2SJ90 2SK146 2SJ75
2SJ76

Abstract: 2SJ79 2SJ77 Hitachi Scans-001 2SK216 2SK215 2SK214 2SK213 2SJ78 PC-H-130
Text: 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Application High frequency and low frequency power amplifier, high , . Source (Flange) 3. Drain This Material Copyrighted By Its Respective Manufacturer 2SJ76, 2SJ77 , 2SJ78 , VDSX -140 V 2SJ77 -160 2SJ78 -180 2SJ79 -200 Gate to source voltage ^GSS  , , lD = -1 mA breakdown voltage 2SJ77 -160 — — V 2SJ78 -180 — — V 2SJ79 -200 — — V , Manufacturer 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Power vs. Temperature Derating Typical Output Characteristics 50


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PDF 2SJ76, 2SJ77, 2SJ78, 2SJ79 2SK213, 2SK214, 2SK215, 2SK216 O-220AB 2SJ76 2SJ79 2SJ77 Hitachi Scans-001 2SK216 2SK215 2SK214 2SK213 2SJ78 PC-H-130
1998 - 2SJ76

Abstract: Hitachi 2SJ Hitachi DSA002751 2SK213 2Sk214
Text: 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Silicon P-Channel MOS FET November 1996 Application High frequency , (Flange) 3. Drain S 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse , source breakdown voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage , mA 2 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Power vs. Temperature Derating 60 Channel Dissipation Pch (W


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PDF 2SJ76, 2SJ77, 2SJ78, 2SJ79 2SK213, 2SK214, 2SK215, 2SK216 O-220AB 2SJ76 Hitachi 2SJ Hitachi DSA002751 2SK213 2Sk214
1999 - Hitachi 2SJ

Abstract: Hitachi DSA002780 2sj77
Text: 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low , S 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse drain current , voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage Drain to source , , 2SJ77 , 2SJ78, 2SJ79 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Typical Output


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PDF 2SJ76, 2SJ77, 2SJ78, 2SJ79 2SK213, 2SK214, 2SK215, 2SK216 O-220AB Hitachi 2SJ Hitachi DSA002780 2sj77
tr2b

Abstract: 2SJ77 2SJ79 2SK214 2SK216
Text: HITACHI/íOPTOELECTRONICS} tmW^-H I TAÜffTTTDPf OËLbC l UuNÎCS ) ; 2SJ77 (£),2SJ7Q(g) SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK214®, 2SK216® ■FEATURES • High Speed Switching'. • High Cutoff Frequency. 30MHz) • High Breakdown , - 4.8 - pF HITACHI 61 i HITACHI/-COPTOELECTRONICS]- ï 2SJ77 2SJ79 ®-— ~73 Î>F| 44Tt,50S 000^44 , ¯ / / j / j 7/ k <•> 7 / r f / -1 â


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PDF 2SJ77( 2SK214Â 2SK216Â 30MHz) T-59-/9 O-220AB) 2SJ77Â 2SJ79Â 2SJ77 2SJ79 tr2b 2SJ79 2SK214 2SK216
2000 - 2SJ76

Abstract: 2SJ78 Hitachi 2SJ 2SK216 2SK215 2SK214 2SK213 2SJ79 2SJ77 P-Channel Enhancement FET
Text: 1.0 0.1 0.05 5 k10 k 100 k 1M 10 M Frequency f (Hz) 50 M 2SJ76, 2SJ77 , 2SJ78, 2SJ79 , 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Silicon P-Channel MOS FET ADE-208-1179 (Z) 1st. Edition Mar. 2001 , 1 2 3 1. Gate 2. Source (Flange) 3. Drain G S 2SJ76, 2SJ77 , 2SJ78, 2SJ79 , Ratings ­140 V 2SJ77 ­160 2SJ78 ­180 2SJ79 ­200 Gate to source voltage VGSS , 2SJ77 ­160 - - V 2SJ78 ­180 - - V 2SJ79 ­200 - - V


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PDF 2SJ76, 2SJ77, 2SJ78, 2SJ79 ADE-208-1179 2SK213, 2SK214, 2SK215, 2SK216 O-220AB 2SJ76 2SJ78 Hitachi 2SJ 2SK216 2SK215 2SK214 2SK213 2SJ79 2SJ77 P-Channel Enhancement FET
Hitachi 2SJ

Abstract: HITACHI 2SJ* TO-3
Text: 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High , Absolute M a x im u m Ratings (Ta = 25°C) Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to , source breakdown voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage , MHz 2 HITACHI 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Power vs. Temperature Derating Typical Output , -100 -200 Drain Current lD (mA) 3 HITACHI 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Forward Transfer


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PDF 2SJ76, 2SJ77, 2SJ78, 2SJ79 2SK213, 2SK214, 2SK215, 2SK216 2SJ76 2SJ77 Hitachi 2SJ HITACHI 2SJ* TO-3
2SJ77

Abstract: 2sj79
Text: 2SJ76, 2SJ77 ,2SJ78,2SJ79 Silicon P-Channel MOS FET HITACHI Application High frequency and low , source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse , breakdown voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage Drain to , = Ciss Crss - - - 1 MHz HITACHI 150 2SJ76, 2SJ77 ,2SJ78,2SJ79 Typical , ) HITACHI 151 2SJ76, 2SJ77 ,2SJ78,2SJ79 Forward Transfer Admittance vs. Drain Current w 200 E D


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PDF 2SJ76 2SJ77 2SJ78 2SJ79 2SK213, 2SK214, 2SK215, 2SK216 2sj79
2005 - REJ03G0122-0200

Abstract: 2SK214 2SJ78 2SK216 2SK215 2SK213 2SJ79E 2sj79-e 2SJ79 2SJ77
Text: 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 (Previous: ADE , (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ76, 2SJ77 , 2SJ78 , Value ­140 2SJ77 2SJ78 ­160 ­180 2SJ79 VGSS Channel temperature Storage temperature , V 2SJ77 2SJ78 ­160 ­180 - - - - V V 2SJ79 Gate to source breakdown , Symbol V (BR) DSX Test Conditions VGS = 2 V, ID = ­1 mA 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Main


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PDF 2SJ76, 2SJ77, 2SJ78, 2SJ79 REJ03G0122-0200 ADE-208-1179) 2SK213, 2SK214, 2SK215, 2SK216 REJ03G0122-0200 2SK214 2SJ78 2SK216 2SK215 2SK213 2SJ79E 2sj79-e 2SJ79 2SJ77
1999 - PCH-1

Abstract: 2SJ76 Hitachi 2SJ 2SK216 2SK215 2SK214 2SK213 2SJ79 2SJ78 2SJ77
Text: 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low , . Source (Flange) 3. Drain G S 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Unit VDSX 2SJ76 Ratings ­140 V 2SJ77 , V VGS = 2 V, ID = ­1 mA Drain to source 2SJ76 breakdown voltage 2SJ77 ­160 - , pF f = 1 MHz Note: 2 1. Pulse test 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Typical Output


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PDF 2SJ76, 2SJ77, 2SJ78, 2SJ79 2SK213, 2SK214, 2SK215, 2SK216 O-220AB PCH-1 2SJ76 Hitachi 2SJ 2SK216 2SK215 2SK214 2SK213 2SJ79 2SJ78 2SJ77
2000 - 2SJ76

Abstract: 2SJ77 2SJ78 2SJ79 2SK213 2SK214 2SK215 2SK216 Hitachi 2SJ
Text: 1.0 0.1 0.05 5 k10 k 1M 10 M 100 k Frequency f (Hz) 50 M 2SJ76, 2SJ77 , 2SJ78, 2SJ79 , products contained therein. 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Silicon P-Channel MOS FET ADE-208-1179 (Z , 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Unit VDSX 2SJ76 Ratings ­140 V 2SJ77 ­160 2SJ78 ­180 2SJ79 ­200 , 2SJ76 breakdown voltage 2SJ77 ­160 - - V 2SJ78 ­180 - - V 2SJ79


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2SJ83

Abstract: 2SK238 2SJ82 2SK241 2SK203 2SK240 2SK220 2SK197 2sk215 2SK199
Text: - 38 - S « tt S m m « a f Y f » =6 1 K 1 * î ts a a M tt te (Ta:=25QC , ±15 s 500m D 30 0.2 1.5 10 10m 20m 40m 20 10» 2SK214( K ) BiL RF PA,HS PS» MOS N E 160 DSS ±15 s , D 30 0. 2 1.5 10 10» 20m 40m 20 10m 2SK216( K ) BiL RF PA. HS PS» MOS N E 200 DSX ±15 s 500m , 2.2 10 VDS(sat)=2Vmax lD=10mA, VGD=0 2SJ77 116A GSD 2SK214 90 2.2 10 VDS(sat)=2Vmax ID=10mA.VGD=0 116a GSD, ft#2SK214 2SK214( K ) 90 2.2 10 VDS(sat)=2Vmax ID-10mA. VGD=0 2SJ78


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PDF 2SK19600 2SK197 2SK198 2SK199 2SK201 2SK217 2SK218 2SK220 2SK221 2SS222 2SJ83 2SK238 2SJ82 2SK241 2SK203 2SK240 2sk215 2SK199
2005 - Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Silicon P Channel , , 2005 page 1 of 5 2 3 S 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSX 2SJ76 Value –140 2SJ77 2SJ78 –160 â , Drain to source breakdown voltage Min –140 Typ — Max — Unit V 2SJ77 2SJ78 , , 2005 page 2 of 5 Symbol V (BR) DSX Test Conditions VGS = 2 V, ID = –1 mA 2SJ76, 2SJ77


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2SK216

Abstract: 2SJ76 200V 50A mos fet 2SK215 2SK214 2SK213 2SJ79 2SJ78 2SJ77 2SJ130
Text: HITACHI 2SJ76, 2SJ77 , 2SJ78,2SJ79 SILICON P CHANNEL MOS FET HIGH FREQUENCY AND LOW FREQUENCY , MAXIMUM RATINGS (7^=25 °C) Item Symbol Ratings Unit 2SJ76 2SJ77 2ív'7H ZSJT? Drain-Source , VtAAWIX VGS=2\. /p^-JmA -140 — — V 2SJ77 -160 — — V 2SJ7S -180 — — V 2SJ79 -200 - , » Tes» HITACHI 2SJ76, 2SJ77 ,2SJ78,2SJ79 TYPICAL OUTPUT CHARACTERISTICS TYPICAL OUTPUT CHARACTERISTICS , 1JU In* "1 es >'r 2E N k 7 2e


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PDF 2SJ76 2SJ77, 2SJ78 2SJ79 2SK213, 2SK214, 2SK215, 2SK216 2SJ77 2SK216 200V 50A mos fet 2SK215 2SK214 2SK213 2SJ79 2SJ130
2005 - 2SJ76

Abstract: 2SJ77 2SJ78 2SJ79 2SK213 2SK214 2SK215 2SK216 PRSS0004AC-A
Text: . 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 (Previous: ADE-208-1179) Rev , . Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ76, 2SJ77 , 2SJ78, 2SJ79 , ­140 2SJ77 2SJ78 ­160 ­180 2SJ79 VGSS Channel temperature Storage temperature ­500 , V 2SJ77 2SJ78 ­160 ­180 - - - - V V 2SJ79 Gate to source breakdown , Symbol V (BR) DSX Test Conditions VGS = 2 V, ID = ­1 mA 2SJ76, 2SJ77 , 2SJ78, 2SJ79 Main


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2SK216

Abstract: hitachi j79 2SJ77 2SK214 Hitachi Scans-001
Text: HITACHl/íOPTOELECTRONICS} ApnflflnnTTTI T ACHTTTOFTUm^TRUN lus ; SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary Pair with 2SJ77 J79® ■FEATURES • High Speed Switching. • High Cutoff Frequency. • High Breakdown Voltage. • Suitable for Switching Regulator, DC-DC Converter, RF Amplifiers, and Ultrasonic Power Oscillators. â , 3.5 T =25 k - / 3 0 /. Y 2 5 2.0 1 5


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PDF 2SJ77 2SK214Â 2SK216Â 2SK216 hitachi j79 2SK214 Hitachi Scans-001
hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 HITACHI 2SJ56 K429 k399 Hitachi 2sk176 2sj56
Text: : 2SK186 q 5 , q s : 2SJ77 Q 7 , Qs Qi» : 2SK214 Unit R :Cl Q 9 . Q,o : 2 S K 1 3 4 Q i 2 , , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 )7 8 9 1 4 , Equivalent Circuit K V \fW \ W W - \ K on r e 1 \ r r Small (2.5fi)* Large (1800pF , O d © 05 Ì o C M d a k 4 a o C O d 0 1 C O C M · 5 S d d C -~ C M in in m 8 C M · g C M c , M C M 4 0 0 C O C M · D Series Lin< 3 i < D M K 3 C M C M C M < < O TJfT O 05 in d


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PDF RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 HITACHI 2SJ56 K429 k399 Hitachi 2sk176 2sj56
2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent .model 2SK216 DRUM DRIVER 2sj44
Text: (1.0) · 2S J161 (1.0) 160 A 23K214 (8) A 2SJ77 (10) · 2 S K 1 0 5 8 (1.0) · 2 S J 1 6 2 (1.0 , Ciss fc (MHz) 40/30 Package TO -220AB N-ch 2S K 213 2SK 214 2SK215 2SK216 P-ch 2SJ76 2SJ77 , ) 2SK1152 (4.0) 10 W tO 30 W A 2 S K 1 1 5 3 (2.0) A 2 S K 1 1 5 4 (2.2) 2SK1862 (2.0) 2SK1863 (2.2) 30 W to 50 W 2SK1155 (1.0) A 2 S K 1 1 5 6 (1.2) A 2SK1157 (0.6) A 2 S K 1 1 5 8 (0.7) 2SK1313 (1.0 , ) T 2SK2115 (1.2) V 2SK2117 (0.6) 200 V to 264 V AC 2SK1880 (6.5) A 2 S K 1 3 3 8 (5) 2SK2059 (3.8


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PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent .model 2SK216 DRUM DRIVER 2sj44
2sk1058 equivalent

Abstract: Hitachi MOSFET MBM300BS6 2SK1270 inverter 12v to 220 ac mosfet based equivalent transistor 2sk 2sk1645 2SK1058 MOSFET APPLICATION NOTES 2SC297 2sk682
Text: ▲ 2SK214 (8) A 2SJ77 (lO) • 2SK1058 (1.0) m 2SJ162 (1.0) 180 ▲ 2SK215 (8) â , 350 400 Note^ <) : R»S ) *yp < > („n n N ote 3 * U nder developm ent K ik S .  , (0 1 ) M S tX S l • (6 0 ) K S IX S Z • (O X ) 6 S 8 IX S Z 9 (rt) tu tx s z * (Z I ) Z K I X S Z • (r i)w z tx s z • (O X) I K t X S Z • (O X)C O ZIXSZ • (o u rm x sz 9 (0 O w x s z • (O 'D v o h x se * • • • (0 0 O K IX S Z • (o O e o e i x s e


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PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent Hitachi MOSFET MBM300BS6 2SK1270 inverter 12v to 220 ac mosfet based equivalent transistor 2sk 2sk1645 2SK1058 MOSFET APPLICATION NOTES 2SC297 2sk682
HA 12058

Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Text: I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION HMffll M K MI E B E « TM EBE 0 H ITACH I , . I Bipolar RAM GATE ARRAYS CMOS HD61J/ K /L/MM Series . , . 2SJ48 2SJ49 2SJ50 2SJ55 2SJ56 2 S J5 6 © 2SJ68 2SJ69 2SJ70 2SJ76 2SJ77 2 S J7 7 ® 2SJ78 2SJ79 2 S J7 9 , 2SK312 2SK313 2SK317 2SK318 2SK319 2SK320 2SK322 2SK323 2SK343 2SK344 2SK345 2SK346 2SK347 2 S K 347 , 2 S K 416© 2SK428 2SK429 2SK 429© 2SK430 2S K 4 3 0 © 2SK431 2SK435 2SK439 2SK440 2SK441 2SK457


OCR Scan
PDF HD25/HD HMCS40 HL8314E" HL8312 HL8311 HLP1000 HL7802 HL7801 HL1221 HLP5000 HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: . 16 Index ·2SA Series Type No. Package 673 TO-92 673A TO-92 673A( K ) TO-92 778( K ) TO-92 778A( K ) TO-92 836 TO-92 844 TO-92 872A TO-92 893 TO-92 893A TO-92 1029 TO-92 1030 TO , -92 1190 TO-92 1191 TO-92 1193( K ) TO-92MOD 1374 SPAK 1390 SPAK 1484 MPAK 1566 MPAK 1617 MPAK 2080 CMPAK 2081 CMPAK ·2SB Series Type No. Package 561 TO-92 562 TO-92MOD 566( K ) TO-220AB 566A( K ) TO-220AB 647 TO-92MOD 647A TO-92MOD 715 TO-92MOD 716 TO-92MOD 716A TO-92MOD 727( K


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PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: 673 TO-92(1) 673A TO-92(1) 673A( K ) TO-92(1) 778( K ) TO-92(1) 778A( K ) TO-92(1) 836 TO-92(1 , ) 1193( K ) TO-92MOD 1566 MPAK 2080 CMPAK 2081 CMPAK 2SB Series Type No. Package 561 TO-92(1) 562 TO-92MOD 566( K ) TO-220AB 566A( K ) TO-220AB 647 TO-92MOD 647A TO-92MOD 727( K ) TO-220AB 739 TO-92MOD 740 TO-92MOD 791( K ) TO-220AB 831 MPAK 857 TO-220AB 858 TO-220AB 859 TO-220AB 860 TO-220AB 861 TO-220AB 955( K ) TO-220AB 1001 UPAK 1002 UPAK 1025 UPAK 1026 UPAK 1028


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PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
Text: TO-92(1) 673A( K ) TO-92(1) 778( K ) TO-92(1) 778A( K ) TO-92(1) 836 TO-92(1) 844 TO-92(1) 872A , ) 1191 TO-92(1) 1193( K ) TO-92MOD 1484 MPAK 1566 MPAK 1617 MPAK 2080 CMPAK 2081 CMPAK !2SB Series Type No. Package 561 TO-92(1) 562 TO-92MOD 566( K ) TO-220AB 566A( K ) TO-220AB 647 TO-92MOD 647A TO-92MOD 715 TO-92MOD 716 TO-92MOD 716A TO-92MOD 727( K ) TO-220AB 738 TO-92MOD 739 TO-92MOD 740 TO-92MOD 791( K ) TO-220AB 831 MPAK 857 TO-220AB 858 TO-220AB 859 TO-220AB 860 TO


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PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK1317 equivalent 2SJ182 equivalent 2SK215 equivalent 2SJ40 2sj332 2sk1058 equivalent
Text: Type Voltage 100 V to 132 V AC Up to 10 w 2SK1151 {3.5} 2SK1152 (4.0) 10 W to 30 W A 2 S K 1 1 5 3 (2.0) A 2 S K 1 1 5 4 (2-2) 2SK1862 (2.0) 2SK1863 (2.2) 30 W to 50 W A 2SK1155 (1.0) 2SK1156 (1.2) A 2 S K 1 1 5 7 (0.6) A 2 S K 1 1 5 8 (0.7) 2SK1313 (1.0) 2SK1314 (1.2) 2SK1540 (0,6) 2SK1541 (0.7 , AC 2SK1880 (6.5) 2SK1338 (5) 2SK2059 (3.8) 2SK1572 (3.8) H 2SK161S (3.8) V 2 S K 2 1 4 4 (3.8) · 2SK1339 (5) 2SK1402A (2.0) Ml 2SK1624 (1.8} 2SK1637 (1.8) 2S K 1404 (1.0) V 2SK2097 (1.8) T 2SK2118


OCR Scan
PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK1317 equivalent 2SJ182 equivalent 2SK215 equivalent 2SJ40 2sj332 2sk1058 equivalent
2000 - 98Au

Abstract: 88Au-12Ge B 103 K ceramic capacitor M82820 MIL-STD-883 method 2019 CLB32 K/RJP3042 CLB11 CLB10 z620
Text: K 5 16 4 8 1 2 2 CLB53 W UH 1 4 8 L L B ±10 F 30 -80 YFD 30 -90 25 3 B±0.1pF K ±10% M±20% L W Tmax. CLB11 , B B 1.0 1R0 K K K K K 1.1 1R1 K K K K 1.2 1R2 K K K K 1.3 1R3 K K K K 1.5 1R5 K K K K 1.6 1R6 K K K K 1.8 1R8 K K K K 2.0 2R0 K K K K 2.2 2R2 K


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PDF C01J7 C01-7webPDF 25mm2 4300pF CLB11, CLB15, CLB12, CLB16, CLB17, CLB13, 98Au 88Au-12Ge B 103 K ceramic capacitor M82820 MIL-STD-883 method 2019 CLB32 K/RJP3042 CLB11 CLB10 z620
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