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2SJ50(H) datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
2SJ50H 2SJ50H ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2SJ50H 2SJ50H ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
2SJ50H 2SJ50H ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SJ50(H) 2SJ50(H) ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2SJ50(H) 2SJ50(H) ECAD Model Others FET Data Book Scan PDF

2SJ50(H) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SJ18

Abstract: 2SJ56 2sk176 2SJ51 2SK151 2SK60 2SJ20 2M150S-050 2SJ56 2sk133 2Sj48 2SJ49 2sk134
Text: )=-12Vmax IB'-U, YGD=0 2SK135H 28A GDS. ft^ 2SJ50 2SJ50 ( H ) 1 3 lk lk 2SK151 97A DGS. ft^2SJ70 2SJ51 , - 14 - S s tt S ffl & m ü f r ♦ h í 1 I" fi X ä: <® S S 615/CH ln 30 -lm -12m -10 6 -10 -10« 1. 5m -10 IDSS 2SJ40 H a LF A, A-SW P D 50 GDO -10m G , -10 -100m 0. 7 -10 -3 2SJ49Í H ) Hi HS PS* MOS P E -140 DSX ±14 s -7 D 100 -0. 15 -1.45 -10 -100m 0.7 2SJ50 Hi LF/HF PA, HS PS* MOS P E -160 DSX ±14 s -7 D 100 -0. 15 -1.45 -10 -100m 0


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PDF 2MI50F-050 2M150S-050 2N4392 -100p 2N4393 2SJ11 -12Vjnax 2SK132 2SJ48 2SJ18 2SJ56 2sk176 2SJ51 2SK151 2SK60 2SJ20 2M150S-050 2SJ56 2sk133 2Sj48 2SJ49 2sk134
2SJ49 2sk134

Abstract: 2SJ49 2SJ50 2SK134 2SK135 2SJ48 2Sj49 HITACHI diode 2U 14 2sk133 2Sj48 2SK133
Text: (T.=25 °C) Item Symbol Rating Unit 2SJ48 2SJ49 2SJ50 Drain-Source Voltage Vosx -120 -140 , Voltage 2SJ50 -160 — — V Gate-Source Breakdown Voltage V|«|CU /c=±100>iA, Voi=0 ±14 - - V , ,2SJ49, 2SJ50 MAXIMUM SAFE OPERATION AREA I -S -Ki -¿0 -V) — 1(K> -2 H , ,2SJ49, 2SJ50 FORWARD TRANSFER ADMITTANCE SWITCHING TIME VS. FREQUENCY VS. DRAIN CURRENT Fmjuency / (Hz


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PDF 2SK133, 2SK134, 2SK135 2SJ48 2SJ49 2SJ50 -2SJ48 2SJ49 2sk134 2SJ50 2SK134 2SK135 2Sj49 HITACHI diode 2U 14 2sk133 2Sj48 2SK133
2SK131

Abstract: 2SK130A 2SJ72 2SK146 2SK130 2SJ49 2sk134 2SK151 2SK150 2SK160 2SK150 A
Text: )=12Vmax ID=7A, VGD=0 2SJ49( H ) 28A GDS 2SK134Í H ) 600 10 -5 10 VDStsat)=12Vnax ID=7A, VGD=0 2SJ50 28A GDS 2SK135 600 10 -5 10 VDS(sat)=12Vmax ID=7A, VGD=0 2SJ50 ( H ) 28A ft#2SK135.GDS 2SK135Í H , D 100 0.15 1.45 10 0.1 0.7 10 3 2SK134Í H ) hs HS PSW MOS N E 140 DSX ±15 s 7 D 100 0.15 , 0.7 10 3 2SK135( H ) hs. HS PSW MOS N i; 160 DSX ±14 s 7 D 100 0.15 1.45 10 0.1 0.7 10 3


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PDF 2SK130 2SK130A 2SK131 25/CH 2SK132 20mVniax VDS-10V. 2SJ73 2SK146 10dBmax 2SJ72 2SK146 2SJ49 2sk134 2SK151 2SK150 2SK160 2SK150 A
2sk135

Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sj49
Text: LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 FEATURES · · · · · · · , * 0.7 - 1.0 600 350 10 180 60 c , , c, ton to // K ^ - Ö V . V ^ lO V ./^ lM H z - - V'oo=20V, / d=4A 230 blE » 4^bS05 QG13DGT 153 H I T M 2SK133.2SK1 34.2S K 135 , SATURATION VOLTAGE VS. DRAIN CURRENT Dr*'" Current h (A) G t i e t o S o u r c e V o lta g e V'cs , A DM ITTANCE VS. FREQUENCY 0 0 1 3 0 1 0 R7S « H i m SW ITCHING TIM E VS. D R A IN CURRENT


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PDF D13D0Ö 2SK133 2SK134 2SK135 2SJ48, 2SJ49, 2SJ50 35FOR 2sk135 2SJ49 2sk134 hitachi 2sk135 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sj49
2SK135

Abstract: 2SK134 SK135 2SK133 K134 2SJ49 2SJ48 2SJ49 2sk134 2sk133 2Sj48
Text: S IL IC O N N -C H A N N E L M OS F E T 2SJ48 2SJ49 2SJ50 f t ë · * 4 y f y f T . t '- K jM B I'« · 3c £ I M 1 M W *( A S O ) * £ ( . 'o · X y / ' X ^ ^ y J.G â t* · y - H c f t î S y - i * - K*l*ï * 0 · t - 7 4 * 7 y 7 t b ? J . * - ? 3 > h o-yu/¿¿ficftifl 2. D run 3 , in C u r r e n t Body-D ra in D iode Reverse D r a in C u r r e n t C h a n n e l D issip a tio n C h , L E C T R I C A L C H A R A C T E R IS T IC S ( 7 > 2 5 °C ) Item 2SK133 D ra in -S o u rc e B re a


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PDF 2SJ48 2SJ49 2SJ50 133I2S 2SK13Ì 2SK135 2SK134 SK135 2SK133 K134 2SJ49 2sk134 2sk133 2Sj48
2SJ49 2sk134

Abstract: 2SJ49 2SJ50 hitachi 2sj50 2SK135 2sk133 2Sj48 2SJ48 2Sk135 HITACHI 2SK134 2SJ50 2SK135
Text: .=25 °C) Item Symbol Rating Unit 2SJ48 2SJ49 2SJ50 Drain-Source Voltage Vdsx -120 -140 -160 V , Breakdown 2SJ48 -120 - - V 2SJ49 t^MlOU /o=- 10mA, VCJ=10V -140 - - V Voltage 2SJ50 -160 — — V , ,2SJ49, 2SJ50 MAXIMUM SAFE OPERATION AREA -20r UOV.-0 71A1 ( — I«>V.-0.63M I I -.ti -vi -um -am Driiii , VOLTAGE VS. GATE TO SOURCE VOLTAGE INPUT CAPACITANCE VS. GATE TO SOURCE VOLTAGE h - J , 1IX* JOOk IM Fmjuency j (Hz) 2SJ48,2SJ49, 2SJ50 SWITCHING TIME VS. DRAIN CURRENT


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PDF 2SK133, 2SK134, 2SK135 2SJ48 2SJ49 2SJ50 2SJ50 2SJ49 2sk134 hitachi 2sj50 2SK135 2sk133 2Sj48 2Sk135 HITACHI 2SK134 2SJ50 2SK135
2SJ49 2sk134

Abstract: 2SK135 2SK134 2SJ49 2SJ50 2SJ50 2SK135 NCC KM 2SJ48 2sk133 2Sj48 2SK133
Text: 'SVT^W*~TZfWz*•'■? ' .il: SILICON P-CHANNEL MOS FET A3 HA MUM;XAM 2SK133. 2SK134, 2SK135 to Vf')* V9 ■« fi • fltttMfttftfftntt'*. • y- ne«9o h iute 1.Gate 2. Drain 3W« (JEDEC TO-3) (Cue) (Dimrnitore in mml ABSOLUTE MAXIMUM RATINGS (7>25 °C) •Valu» at 7V"2S #C , 2SJ49 2SJ50 Drain-Source Voltige I'm, -120 -140 -160 V Gate-Source Voltage Vcu ±14 V Drain , -140 — — V 2SJ50 -160 — — V Gate-Source Breakdown Voltage vimu, /c-±100»iA. Vw=0 ±14 -


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PDF 2SK133. 2SK134, 2SK135 2SJ48 2SJ49 2SJ50 -10mA. Vc-10V 2SJ49 2SJ49 2sk134 2SK134 2SJ50 2SJ50 2SK135 NCC KM 2sk133 2Sj48 2SK133
2SJ56 2sk176

Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
Text: 180/230 60/110 600/900 3/2 2SK134 2SJ49 140* 2SK135 2SJ50 160* 2SK17S 2SJ55 180* ±20 8 125 1 1.7 1 250/230 90/120 800/1200 2/1 2SK176 2SJ56 200* 2SK176 2SJ56( H , 25°C * : Test conditions : VDS > ID RDS(0n), Ip = V2 Ip max (DC) ( H ) : Specially manufactured for


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PDF 2SC2610 2SC2611 2SC4828 2SC26U 2SK296 2SJ56 2sk176 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
2SJ56 2sk176

Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SK1058 MOSFET 2SJ56 HITACHI
Text: 2SK134 2SJ49 140* 2SK135 2SJ50 160* 2SK17S 2SJ55 180* ±20 8 125 1 1.7 1 250/230 90/120 800/1200 2/1 2SK176 2SJ56 200* 2SK176 2SJ56( H ) 200 60 200 2SK220 _ 160 , : VDS > ID RDS(0n), Ip = V2 Ip max (DC) ( H ) : Specially manufactured for communications Industry


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PDF 2SK176 2SJ56 2SK220 2SK221 2SK258 2SK259 2SK260 2SK1056 2SJ56 2sk176 2sJ50 mosfet Hitachi 2sk176 2sj56 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SK1058 MOSFET 2SJ56 HITACHI
hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 HITACHI 2SJ56 K429 k399 Hitachi 2sk176 2sj56
Text: ; photo coupler at full load 80% ; at 200W output 85% L ch 1 IO m H P4 2SJ50 H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 )7 8 9 1 4 , TEL 1 ·» H IT A C H I INDEX 1 2 7 7 1. INTRODUCTION , ) ^ H IT A C H I 2 .STRUCTURE & FEATURES When a voltage is applied between Drain and Source , (G rt in C M C M O O C O OI n C M H « C s) O C T > ® n C O C M · in C M O C rO t h * N 2 O o C O


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PDF RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 HITACHI 2SJ56 K429 k399 Hitachi 2sk176 2sj56
2SK134 equivalent

Abstract: 2sk135 equivalent 2SJ48 equivalent IRF150 To3 package 2SJ50 equivalent HPWR 6501 HPWR-6503 2SJ49 2sk134 HPWR-6504 2SJ49 equivalent
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , -100 1.71 TO-3 — — — 2SJ48 -120 1.71 TO-3 — — — 2SJ49 -140 1.71 TO-3 — — — 2SJ50


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2SK134 equivalent 2sk135 equivalent 2SJ48 equivalent IRF150 To3 package 2SJ50 equivalent HPWR 6501 2SJ49 2sk134 2SJ49 equivalent
HA 12058

Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Text: EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION HMffll M K MI E B E « TM EBE 0 H ITACH I , for a problem involving a patent caused when applying the descriptions in the example. 2 0 H IT A C H I PRODUCT LIST Spec. Device No. Function Structure Package code Material fo r details Page Outlines o f functions o f each product are described. H itachi's products are listed in


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PDF HD25/HD HMCS40 HL8314E" HL8312 HL8311 HLP1000 HL7802 HL7801 HL1221 HLP5000 HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
2SJ56

Abstract: 2SJ50 equivalent 2SJ56 equivalent 2SKI76 BUZ90QP BUZ90I BUZ90IP BUZ90S BUZ905D T0264
Text: dissipates up to 250W p e r d ev ic e. T h e sin g le ch ip die BU Z901/906 are optim ised for use in , 125 160 160 ito 200 206 200 25C2SK176 . 2SJ5Q 2 X 2SJ50 BUZ90SP BUZ906 BU2S06D BUZ906P § M


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PDF 8/16Amp, 160/200Voit BUZ900D BUZ90QP BUZ90I Z901/906 2SJ162 2SJ56 2X2SJ56 USPI6N20 2SJ56 2SJ50 equivalent 2SJ56 equivalent 2SKI76 BUZ90I BUZ90IP BUZ90S BUZ905D T0264
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Text: 05 TO 3 160V 8A 125W P : 2SJ50 BUZ905D TO 3 160V 16A 250W P 2 X 2SJ50 BUZ9 05P T0247 160V 8A 125W P , • ■H f ; r~ 1.,Li. ' —4 ' : I —»- - h I ■' , AS BUZ900P & BUZ901P absolute maximum ratings H ~case = 25°C unless otherwise stated) BU2905P , €¢0.01 -10 > -6 1 1 ^ 1 H ! 1 , r" 1 Tc»25'C . 1 1 ! ¿M 1 1 , 1 1 1 : ! 1 1 '1 r 1 i 1 H - 1- 1


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PDF BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
2SJ507

Abstract: Toshiba 2SJ Transistor
Text: X . 0.8M AX. ' ' ÍM c v Ì ÍV n n - _ « H V Ì \ ' JJO 0.6M AX. Enhancement-Mode : V , fT U 1 U 1 r f f t x 77T 1. 2. 3. SOURCE DRAIN GATE Drain-Source Voltage j- j x VDSS h u .11 1 v u iy u g u - o rv b - c v J - H jE ) - ' L J K jrtX Gate-Source Voltage DC , sta tic sen sitiv e device. P le ase h a n d le w ith cau tio n . , and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. # T h e information


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PDF 2SJ507 75MAX. --10V, 2SJ507 Toshiba 2SJ Transistor
irf 150 equivalent

Abstract: 2sk135 equivalent hitachi 2sk135 irf150 HPWR-6502 2SK133 IRF331 PM100RLA060 IRF351 irf 111
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , -100 1.71 TO-3 — — — 2SJ48 -120 1.71 TO-3 — — — 2SJ49 -140 1.71 TO-3 — — — 2SJ50


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf 150 equivalent 2sk135 equivalent hitachi 2sk135 irf150 2SK133 IRF331 PM100RLA060 IRF351 irf 111
Not Available

Abstract: No abstract text available
Text: temperature. * VDD = -5 0 V , Tch = 250C, L = 168mH, Rg = 25H, IAR= - 1 A T h is transistor is an , forth in the TOSHIBA Semiconductor Reliability Handbook. # T h e information contained herein is , other rights of TOSHIBA CORPORATION or others. # T h e information contained herein is subject to change without notice. ci0vicos in C| s n s j m 3! f u r^cti o r f 3 i! d u s to t h s ir ir'i h s r s n t o ls c tric s ! s s n s itiv ity 3 nc! yu!rssr 3 b i!ity to p h ysics! strsss 1998 02-19 - 1/2


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PDF 2SJ509 --100V)
Not Available

Abstract: No abstract text available
Text: 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI Features · Low on-resistance Roaon) = 0.065 Q typ. (at V GS= -1 0 V , ID = -5 A ) · · · L o w drive current H igh speed switching 4 V gate drive devices. ADE-208-548 Target Specification 1st. Edition Outline D P A K -2 1. 2. 3. 4. Gate Drain Source Drain 552 2SJ506(L), 2SJ506ÇS) Absolute Maximum , -3 0 ±20 -1 0 Unit V V A A A W °C °C Notei *D(pulse) ^DR p c h No»2 -4 0 -1 0 20 150 -5


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PDF 2SJ506 ADE-208-548
2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent .model 2SK216 DRUM DRIVER 2sj44
Text: DPAK (2SJ506) 2SJ245 2SJ279 2SJ389 SOP-8 (JEDEC) HAT1025R H AT1020R HAT1024R HAT1026R LDPAK 2SJ479 , m e n t s w itc h 4 b it M C U I A C a d a p te r / p T s . H A T 1 0 2 6 R M - - m '" ~ i , HAT1020R 2®j28° 4 = : D /D con IC K i · C -9 V H A T1020R 1 t-K r - ° -22 v O 12 V * ? v B± 7 B a tte ry H AT1020R 1 4- H A T 2 0 2 5 R rL rr T y p ic a l c irc u it s h o w , .) Power management switching circuit ( H R W 2 6 F ) (HAT 1026 r) C © ,0 -A V b * lc .|. _


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PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent .model 2SK216 DRUM DRIVER 2sj44
2SJ177

Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Text: .746 S O P-8 ( H A T Series) HAT1016R , .934 H A TI03IT


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PDF 2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Not Available

Abstract: No abstract text available
Text: mH, Rq = 25 H , IAR = - 1 A Mounted on ceramic substrate (1 inch2 X 0.81) This tran sisto r is a n , CORPORATION or others. # T h e information contained herein is subject to change without notice. 1999 , .5 A .¡J h VOUT p , :RL = loo n m n1 c! > \ = Vi n : tr, tf < 5 ns, Duty á 1%, tw =


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PDF 2SJ508
2sk135 equivalent

Abstract: irf250 IRF133 international rectifier IRF223 IRF122 HPWR-6504 HPWR-6503 HPWR-6502 2SK133 IRF350
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR , -100 1.71 TO-3 — — — 2SJ48 -120 1.71 TO-3 — — — 2SJ49 -140 1.71 TO-3 — — — 2SJ50 , O < O w 300 200 i 100 < cc a a > h m (a O < O r- H » O m ï o o > a < S 10 15 20


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2sk135 equivalent irf250 IRF133 international rectifier IRF223 2SK133 IRF350
Not Available

Abstract: No abstract text available
Text: tro sta tic sen sitiv e device. P le ase h a n d le w ith cau tio n . 961001EAA1 • TOSHIBA is , lYfsl ^iss VDS=-10V , v Gs= ov, Crss f= lM H z Coss 0V -I r lD tr VgS - â , €œ vUUT h p ;r l =60 ü tf Turn-off Time |tj — = —0.5A ° ¿ r 'm n7 “i


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PDF 2SJ507 100/xA
marking pd

Abstract: No abstract text available
Text: , semiconductor ci0vicos in C| s n s m 3! f u r^cti Oft o r f 3 i! d u s to t h s ir o ls c tric s ! s s n s itiv ity 3 nc! \zu!r'is r 3 b i!ity to p h ysics! strsss It is the responsibility of the buyer, when u , nc i= f n vv 'j f = 1MHz ov -, r Id = h + ° g - s - - V U K lOvLJ ß Switching Time O


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PDF 2SJ508 --100V) 10/is marking pd
2sk135 equivalent

Abstract: 2SK134 equivalent HPWR-6502 irf150 IRF441 IRF340 irf840 equivalent IRF122 HPWR-6504 HPWR-6503
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , -100 1.71 TO-3 — — — 2SJ48 -120 1.71 TO-3 — — — 2SJ49 -140 1.71 TO-3 — — — 2SJ50


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2sk135 equivalent 2SK134 equivalent irf150 irf840 equivalent
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