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2SJ49(H) datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
2SJ49H 2SJ49H ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
2SJ49H 2SJ49H ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2SJ49(H) 2SJ49(H) ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2SJ49(H) 2SJ49(H) ECAD Model Others FET Data Book Scan PDF
2SJ49H 2SJ49H ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF

2SJ49(H) Datasheets Context Search

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2SJ18

Abstract: 2SJ56 2sk176 2SJ51 2SK151 2SK60 2SJ20 2M150S-050 2SJ56 2sk133 2Sj48 2SJ49 2sk134
Text: =0 2SK134 28A GDS 2SJ49 900 40 5 -10 VDS(sat)=-12Vmax ID=-7A, VGD=0 2SK134H 28A GDS 2SJ49 ( H ) 900 40 , - 14 - S s tt S ffl & m ü f r ♦ h í 1 I" fi X ä: <® S S 615/CH ln 30 -lm -12m -10 6 -10 -10« 1. 5m -10 IDSS 2SJ40 H a LF A, A-SW P D 50 GDO -10m G , -1.45 -10 -100m 0. 7 -10 -3 2SJ49 HÄ LF PA, HS PSW MOS P E -140 DSX ±14 s -7 D 100 -0. 15 -1.45 -10 -100m 0. 7 -10 -3 2SJ49Í H ) Hi HS PS* MOS P E -140 DSX ±14 s -7 D 100 -0. 15 -1.45 -10


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PDF 2MI50F-050 2M150S-050 2N4392 -100p 2N4393 2SJ11 -12Vjnax 2SK132 2SJ48 2SJ18 2SJ56 2sk176 2SJ51 2SK151 2SK60 2SJ20 2M150S-050 2SJ56 2sk133 2Sj48 2SJ49 2sk134
2SJ49 2sk134

Abstract: 2SJ49 2SJ50 2SK134 2SK135 2SJ48 2Sj49 HITACHI diode 2U 14 2sk133 2Sj48 2SK133
Text: (T.=25 °C) Item Symbol Rating Unit 2SJ48 2SJ49 2SJ50 Drain-Source Voltage Vosx -120 -140 , . max. Unit Drain-Source Breakdown 2SJ48 -120 - - V 2SJ49 fiuto» Ib=- 10mA, VCJ=10V -140 - - V , , 2SJ49 ,2SJ50 MAXIMUM SAFE OPERATION AREA I -S -Ki -¿0 -V) — 1(K> -2 H , , 2SJ49 ,2SJ50 FORWARD TRANSFER ADMITTANCE SWITCHING TIME VS. FREQUENCY VS. DRAIN CURRENT Fmjuency / (Hz


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PDF 2SK133, 2SK134, 2SK135 2SJ48 2SJ49 2SJ50 -2SJ48 2SJ49 2sk134 2SJ50 2SK134 2SK135 2Sj49 HITACHI diode 2U 14 2sk133 2Sj48 2SK133
2SK131

Abstract: 2SK130A 2SJ72 2SK146 2SK130 2SJ49 2sk134 2SK151 2SK150 2SK160 2SK150 A
Text: 10 -5 10 VDS(sat)=12V«ax ID=7A.VGD=0 2SJ49 28A GDS 2SK134 600 10 -5 10 VDS(sat)=12Vmax ID=7A, VGD=0 2SJ49 ( H ) 28A GDS 2SK134Í H ) 600 10 -5 10 VDStsat)=12Vnax ID=7A, VGD=0 2SJ50 28A GDS 2SK135 600 10 -5 10 VDS(sat)=12Vmax ID=7A, VGD=0 2SJ50( H ) 28A ft#2SK135.GDS 2SK135Í H , D 100 0.15 1.45 10 0.1 0.7 10 3 2SK134Í H ) hs HS PSW MOS N E 140 DSX ±15 s 7 D 100 0.15 , 0.7 10 3 2SK135( H ) hs. HS PSW MOS N i; 160 DSX ±14 s 7 D 100 0.15 1.45 10 0.1 0.7 10 3


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PDF 2SK130 2SK130A 2SK131 25/CH 2SK132 20mVniax VDS-10V. 2SJ73 2SK146 10dBmax 2SJ72 2SK146 2SJ49 2sk134 2SK151 2SK150 2SK160 2SK150 A
2SJ49 2sk134

Abstract: 2SJ49 2SJ50 hitachi 2sj50 2SK135 2sk133 2Sj48 2SJ48 2Sk135 HITACHI 2SK134 2SJ50 2SK135
Text: .=25 °C) Item Symbol Rating Unit 2SJ48 2SJ49 2SJ50 Drain-Source Voltage Vdsx -120 -140 -160 V , Breakdown 2SJ48 -120 - - V 2SJ49 t^MlOU /o=- 10mA, VCJ=10V -140 - - V Voltage 2SJ50 -160 — — V , , 2SJ49 ,2SJ50 MAXIMUM SAFE OPERATION AREA -20r UOV.-0 71A1 ( — I«>V.-0.63M I I -.ti -vi -um -am Driiii , VOLTAGE VS. GATE TO SOURCE VOLTAGE INPUT CAPACITANCE VS. GATE TO SOURCE VOLTAGE h - J , 1IX* JOOk IM Fmjuency j (Hz) 2SJ48, 2SJ49 ,2SJ50 SWITCHING TIME VS. DRAIN CURRENT


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PDF 2SK133, 2SK134, 2SK135 2SJ48 2SJ49 2SJ50 2SJ50 2SJ49 2sk134 hitachi 2sj50 2SK135 2sk133 2Sj48 2Sk135 HITACHI 2SK134 2SJ50 2SK135
2SK135

Abstract: 2SK134 SK135 2SK133 K134 2SJ49 2SJ48 2SJ49 2sk134 2sk133 2Sj48
Text: S IL IC O N N -C H A N N E L M OS F E T 2SJ48 2SJ49 2SJ50 f t ë · * 4 y f y f T . t '- K jM B I'« · 3c £ I M 1 M W *( A S O ) * £ ( . 'o · X y / ' X ^ ^ y J.G â t* · y - H c f t î S y - i * - K*l*ï * 0 · t - 7 4 * 7 y 7 t b ? J . * - ? 3 > h o-yu/¿¿ficftifl 2. D run 3 , in C u r r e n t Body-D ra in D iode Reverse D r a in C u r r e n t C h a n n e l D issip a tio n C h , L E C T R I C A L C H A R A C T E R IS T IC S ( 7 > 2 5 °C ) Item 2SK133 D ra in -S o u rc e B re a


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PDF 2SJ48 2SJ49 2SJ50 133I2S 2SK13Ì 2SK135 2SK134 SK135 2SK133 K134 2SJ49 2sk134 2sk133 2Sj48
2sk135

Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sj49
Text: LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49 , 2SJ50 FEATURES · · · · · · · , * 0.7 - 1.0 600 350 10 180 60 c , , c, ton to // K ^ - Ö V . V ^ lO V ./^ lM H z - - V'oo=20V, / d=4A 230 blE » 4^bS05 QG13DGT 153 H I T M 2SK133.2SK1 34.2S K 135 , SATURATION VOLTAGE VS. DRAIN CURRENT Dr*'" Current h (A) G t i e t o S o u r c e V o lta g e V'cs , A DM ITTANCE VS. FREQUENCY 0 0 1 3 0 1 0 R7S « H i m SW ITCHING TIM E VS. D R A IN CURRENT


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PDF D13D0Ö 2SK133 2SK134 2SK135 2SJ48, 2SJ49, 2SJ50 35FOR 2sk135 2SJ49 2sk134 hitachi 2sk135 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sj49
2SJ49 2sk134

Abstract: 2SK135 2SK134 2SJ49 2SJ50 2SJ50 2SK135 NCC KM 2SJ48 2sk133 2Sj48 2SK133
Text: 'SVT^W*~TZfWz*•'■? ' .il: SILICON P-CHANNEL MOS FET A3 HA MUM;XAM 2SK133. 2SK134, 2SK135 to Vf')* V9 ■« fi • fltttMfttftfftntt'*. • y- ne«9o h iute 1.Gate 2. Drain 3W« (JEDEC TO-3) (Cue) (Dimrnitore in mml ABSOLUTE MAXIMUM RATINGS (7>25 °C) •Valu» at 7V"2S #C , 2SJ49 2SJ50 Drain-Source Voltige I'm, -120 -140 -160 V Gate-Source Voltage Vcu ±14 V Drain , . Unit Drain-Source Breakdown Voltage 2SJ48 l'iâft.OLV /©■-10mA. Vc-10V -120 — — V 2SJ49


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PDF 2SK133. 2SK134, 2SK135 2SJ48 2SJ49 2SJ50 -10mA. Vc-10V 2SJ49 2SJ49 2sk134 2SK134 2SJ50 2SJ50 2SK135 NCC KM 2sk133 2Sj48 2SK133
2SJ56 2sk176

Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
Text: 180/230 60/110 600/900 3/2 2SK134 2SJ49 140* 2SK135 2SJ50 160* 2SK17S 2SJ55 180* ±20 8 125 1 1.7 1 250/230 90/120 800/1200 2/1 2SK176 2SJ56 200* 2SK176 2SJ56( H , 25°C * : Test conditions : VDS > ID RDS(0n), Ip = V2 Ip max (DC) ( H ) : Specially manufactured for


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PDF 2SC2610 2SC2611 2SC4828 2SC26U 2SK296 2SJ56 2sk176 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
2SJ56 2sk176

Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SK1058 MOSFET 2SJ56 HITACHI
Text: 2SK134 2SJ49 140* 2SK135 2SJ50 160* 2SK17S 2SJ55 180* ±20 8 125 1 1.7 1 250/230 90/120 800/1200 2/1 2SK176 2SJ56 200* 2SK176 2SJ56( H ) 200 60 200 2SK220 _ 160 , : VDS > ID RDS(0n), Ip = V2 Ip max (DC) ( H ) : Specially manufactured for communications Industry


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PDF 2SK176 2SJ56 2SK220 2SK221 2SK258 2SK259 2SK260 2SK1056 2SJ56 2sk176 2sJ50 mosfet Hitachi 2sk176 2sj56 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SK1058 MOSFET 2SJ56 HITACHI
2SK134 equivalent

Abstract: 2sk135 equivalent 2SJ48 equivalent IRF150 To3 package 2SJ50 equivalent HPWR 6501 HPWR-6503 2SJ49 2sk134 HPWR-6504 2SJ49 equivalent
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , -100 1.71 TO-3 — — — 2SJ48 -120 1.71 TO-3 — — — 2SJ49 -140 1.71 TO-3 — — — 2SJ50


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2SK134 equivalent 2sk135 equivalent 2SJ48 equivalent IRF150 To3 package 2SJ50 equivalent HPWR 6501 2SJ49 2sk134 2SJ49 equivalent
2SJ491

Abstract: aeks F20S3P 2SJ49
Text: «ä g n ^ Q -10 Jf- h . y-zPr5]itJ± VGS [V] Gate • Source Voltage ft&JfM B H 8 - 7 - 22 m , z O WJ +r ¿ =s- ° K H 1 g > c \ 2 A a V o ^ i ' 4â , WM^fiM H 8 - 7 - 22 ( 8,7,22 J ( 8.7.22) ( 8,7.22 ) m lu 95 - 723 2/3K V_s ^•f^TCX^Ä^-ri «SMSiFJB SHINDENGEN ELECTRIC MFG. CO.,LTD H 4211387 00Q2bbb ôfit. Y- h Lê^ 2SJ491 Gate Threshold Voltage > X H > O ort A p —} ~ H I -* ^ V O -3 -2.5


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PDF 2SJ491 QD02b 2SJ491 aeks F20S3P 2SJ49
diode si 8722

Abstract: TT22 22 2SJ490 CI 4001 TT22 96230
Text: .fimifttE] H 8 - 7 - 22 (TT22) ( 8,7,22 J / JStt» \ ( 8.7.22} d 95 - 722 i/sR SHINDENGEN , On-state Resistance 1000 0 50 100 Tc [°C] Case Temperature 0 m\ m< £ 2SJ490 H 8 - 7 - 22 [U.Z2 , – 021^307 0002b5b T37 Y- h LiHiïEŒ 2SJ490 Gate Threshold Voltage > T H > <0 to !Ü ë •¿¿l o 5s , i i i i -55 0 50 100 Y-MaßE Te f°C] Case Temperature 150 im^E 0 H 8 - 7 - 22 S fa m , VDS [V] Drain • Source Voltage H 8 - 7 - 22 sii ¡aite £ 2SJ490 tPMftffi 95 - 722 4/s


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PDF 2SJ490 0002bt 2SJ490 diode si 8722 TT22 22 CI 4001 TT22 96230
HA 12058

Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Text: EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION HMffll M K MI E B E « TM EBE 0 H ITACH I , for a problem involving a patent caused when applying the descriptions in the example. 2 0 H IT A C H I PRODUCT LIST Spec. Device No. Function Structure Package code Material fo r details Page Outlines o f functions o f each product are described. H itachi's products are listed in


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PDF HD25/HD HMCS40 HL8314E" HL8312 HL8311 HLP1000 HL7802 HL7801 HL1221 HLP5000 HA 12058 HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 HITACHI 2SJ56 K429 k399 Hitachi 2sk176 2sj56
Text: , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 )7 8 9 1 4 , TEL 1 ·» H IT A C H I INDEX 1 2 7 7 1. INTRODUCTION , ) ^ H IT A C H I 2 .STRUCTURE & FEATURES When a voltage is applied between Drain and Source , (G rt in C M C M O O C O OI n C M H « C s) O C T > ® n C O C M · in C M O C rO t h * N 2 O o C O , ) , subject ID m a x (DC) to change w i t h o u t notice.) * · ' V a l u e at T c = 2 5 ° C


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PDF RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 HITACHI 2SJ56 K429 k399 Hitachi 2sk176 2sj56
irf 150 equivalent

Abstract: 2sk135 equivalent hitachi 2sk135 irf150 HPWR-6502 2SK133 IRF331 PM100RLA060 IRF351 irf 111
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , -100 1.71 TO-3 — — — 2SJ48 -120 1.71 TO-3 — — — 2SJ49 -140 1.71 TO-3 — — — 2SJ50


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf 150 equivalent 2sk135 equivalent hitachi 2sk135 irf150 2SK133 IRF331 PM100RLA060 IRF351 irf 111
2SK2067

Abstract: S20LCA20 d4la20 12014af S24LCA20 S12KC40 D1NL20 SRT-2W6H TRANSISTORS REPLACEMENT S10SC4
Text: List of Discontinued Parts T h e d is c o n tin u e d p a rts a re as fo llo w s . T h e c h a r a c te r is tic s and p e rfo rm a n c e o f re p la c e m e n t p a rts a re a lm o s t th e sam e, b u t th e y are n o t id e n tic a l in all re s p e c ts . T h e re fo re , w e a s k y o u t o s tu d y th e d e ta ils s h o w n in th e lis t c a r e fu lly w h e n u s in g th e p a rts . Diodes Type No. S1VB(A)60Z S1RBA80 S1S6M S3S3M S3S4M D3S3M S3S6M D1NK20 D1NK20H D1NK40 D1NK40H S1K20 S1K20H


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PDF S1RBA80 D1NK20 D1NK20H D1NK40 D1NK40H S1K20 S1K20H S1K40 S1K40H S2K20 2SK2067 S20LCA20 d4la20 12014af S24LCA20 S12KC40 D1NL20 SRT-2W6H TRANSISTORS REPLACEMENT S10SC4
complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: breakdown Lower ON-state resistance Lower costs s h in d e n g e n Features of HVX-II 900V MOSFETs , upgrading from the HVX to HVX-II series 1. H V X -II-series devices are nearly identical to their com parable H V X -series devices in basic characteristics. 2. HVX-II-series MOSFETs feature a higher , ] between H V X and HVX-II MOSFETs in avalanche tolerance r i— !— r 1— I— 1— !— r , r i ) i r i ~i i 100 O c3 u & a > H G O o o c c fl 0 3 > e s < D 1


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PDF DC12V DC24V DC48V AC100V AC200V 0-60V) 2SJ487 2SK2816 2SJ488 2SJ489 complementary MOSFET 2sk transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
C11892E

Abstract: TEA-1037 D1297
Text: e m e n t of patents, co p yrig h ts or other in te lle ctua l p roperty rights of third parties by , device. No license, eith e r express, im plied or o therw ise, is granted under any patents, co p yrig h , plications of a device depend on its quality grade, as indicated below. C ustom ers must c h e c k th e q u a


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PDF 2SJ495 C11892E TEA-1037 D1297
2SK176

Abstract: VN4001A IRF441 IRF340 IRF223 IRF122 HPWR-6504 HPWR-6503 HPWR-6502 2SK133
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , -100 1.71 TO-3 — — — 2SJ48 -120 1.71 TO-3 — — — 2SJ49 -140 1.71 TO-3 — — — 2SJ50


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2SK176 IRF223 2SK133
irf740 equivalent

Abstract: IRF450 equivalent irf340 "cross reference" 2SK259 irf150 HPWR-6502 2SK133 tl 741 IRF351 IRF240
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , -100 1.71 TO-3 — — — 2SJ48 -120 1.71 TO-3 — — — 2SJ49 -140 1.71 TO-3 — — — 2SJ50


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PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf740 equivalent IRF450 equivalent irf340 "cross reference" 2SK259 irf150 2SK133 tl 741 IRF351 IRF240
Not Available

Abstract: No abstract text available
Text: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching HITACHI Features · Low on-resistance RD S ( H n ) = 0.12Q typ. (at V G S = - 1 0 V , ID - - 2 .5 A) · · 4V gate drive devices. Large current capacitance I, = - 5 A ADE-208-482 1st. Edition Outline 536 2SJ496 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current , IGSS ^GSIoff) r A H A V Ü Q Static drain to source on state ^DS(on) resistance ^DS(on


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PDF 2SJ496 ADE-208-482 20TACHI
2sk135 equivalent

Abstract: 2SK134 equivalent HPWR-6502 irf150 IRF441 IRF340 irf840 equivalent IRF122 HPWR-6504 HPWR-6503
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR-6504 400 1.0 TO-3 VN4001A 400 1.0 HITACHI 2SK132 100 1.71 TO-3 IRF122 100 0.4 2SK133 120 1.71 TO , -100 1.71 TO-3 — — — 2SJ48 -120 1.71 TO-3 — — — 2SJ49 -140 1.71 TO-3 — — — 2SJ50


OCR Scan
PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2sk135 equivalent 2SK134 equivalent irf150 irf840 equivalent
transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 2sj318 transistor 2sk 70 transistor 2sk 12 TRANSISTOR 2sK 135 K 2796 4AC14 2SK2788
Text: 0.085 h 660 2.0 0.5 0.35 ' 240 3.0 0.25 0.18 r" 400 1.5 - 5.5 260 1.5 - 6 260 3.0 0.55 0.4 420 3.0 0.45 0.35 400 3.0 - 0.8 380 1.0 8 h 50 - 1.5 - 8 250 r 5.Ò 0.2 0.15 300 3.0 - 5 295 7.0 0.075 0.053 , 2SK1336 2SK1337 TO -92M 2SJ386 2SJ483 2SJ496 2SK975 2SK2085 2SK2734 2SK2851 MPAK 2SJ399 2SJ4 51 ^ 2 & H S2 , 1.3 0.2 30 0.28 0.5 30 1.0 0.28 -200 -0.5 - -12 h -2.0 0.5* -60 -1.0 1.2 -12 -2.0 0.35 -20 -2.0 - -30 0.75 -2.0 -60 -1.0 1.2 -30 0.45 -2.0 0.24 -20 -2.0 200 1.0 - 12 2.0 h 0.35 60 2.5 0.5 100 6.5 0.3


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PDF 2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756 2SD1976 2SB1389 2SB1390 2SB1391 transistor 2sk transistor sp-10 4ac14 2SK157 2sj318 transistor 2sk 70 transistor 2sk 12 TRANSISTOR 2sK 135 K 2796 4AC14 2SK2788
2sk135 equivalent

Abstract: irf250 IRF133 international rectifier IRF223 IRF122 HPWR-6504 HPWR-6503 HPWR-6502 2SK133 IRF350
Text: MOSPOWER Cross Reference List HEWLETT-PACKARD Industry BVDSS rDS(on) Package Siliconix BVDSS rDS(on) Part No. (Volts) (Ohms) Equivalent (Volts) (Ohms) H PWR-6501 450 0.85 TO-3 IRF441 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF441 450 0.85 HPWR , -100 1.71 TO-3 — — — 2SJ48 -120 1.71 TO-3 — — — 2SJ49 -140 1.71 TO-3 — — — 2SJ50 , O < O w 300 200 i 100 < cc a a > h m (a O < O r- H » O m ï o o > a < S 10 15 20


OCR Scan
PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 2sk135 equivalent irf250 IRF133 international rectifier IRF223 2SK133 IRF350
2SJ177

Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Text: .746 S O P-8 ( H A T Series) HAT1016R , .934 H A TI03IT


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PDF 2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
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