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2SJ448-AZ Renesas Electronics Corporation Chip1Stop 1,490 $10.20 $7.92
2SJ449-AZ Renesas Electronics Corporation Rochester Electronics 36 $2.23 $1.81
2SJ449(1) NEC Electronics Group Bristol Electronics 66,000 $1.50 $0.39

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2SJ44 datasheet (25)

Part Manufacturer Description Type PDF
2SJ44 InterFET P-Channel silicon junction field-effect transistor Original PDF
2SJ44 NEC Semiconductor Selection Guide 1995 Original PDF
2SJ44 NEC FET(Junction type) AF low noise amplification Original PDF
2SJ44 Others Shortform Transistor PDF Datasheet Scan PDF
2SJ44 Others Semiconductor Master Cross Reference Guide Scan PDF
2SJ44 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ44 Others FET Data Book Scan PDF
2SJ440 Toshiba Original PDF
2SJ440 Toshiba TRANS MOSFET P-CH 180V 9A 3(2-16F1B) Original PDF
2SJ440 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SJ440 Toshiba P-Channel MOSFET Scan PDF
2SJ440 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan PDF
2SJ440-Y Toshiba Silicon P-Channel MOS Type FET Scan PDF
2SJ440-Y Toshiba P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) Scan PDF
2SJ440-Y Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan PDF
2SJ443 Hitachi Semiconductor Mosfet Guide Original PDF
2SJ443 Hitachi Semiconductor Power MOSFET Quick Reference Guide Original PDF
2SJ443 Renesas Technology Silicon P-Channel MOS FET Original PDF
2SJ448 NEC SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
2SJ448 NEC Switching P-Channel Power MOS FET Original PDF

2SJ44 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
nec 2sk163

Abstract: 2SK163 2SJ44 2SK163 TO92 2sk163 nec 2sk163 transistor 2SJ44 2SK163 SC-43A J22686 TC-3344A C 9014 transistor s 9014 331 transistor transistor 9014 c
Text: NEC ELECTRON DEVICE P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SJ44 DESCRIPTION The 2SJ44 is designed for use in driver stage of AF low noise amplifier. FEATURES • Low Noise Figure en=1.5 nV/VHz TYP. (VDS=-10 V, lD=—1.0 mA, f=1.0 kHz) NV=S20mV • High Voltage, High IVfsI, and Wide Dynamic Range VGD0 ^40 V lYfs 1=9.0 mS TYP. (VDS=-10V, lD=—1.0 mA, f=1.0 kHz) • Complementary to NEC , -9.0-14 -13-18 'DSS Test Conditions : Vqs=_ V, VGg = 0 Nippon Electric Co,Ltd 2SJ44 TYPICAL


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PDF 2SJ44 2SJ44 S20mV 2SK163 J22686 TC-3344A nec 2sk163 2SK163 2SK163 TO92 2sk163 nec 2sk163 transistor 2SJ44 2SK163 SC-43A J22686 TC-3344A C 9014 transistor s 9014 331 transistor transistor 9014 c
nec 2sk163

Abstract: 2sk163 2SJ44 2sk163 transistor 2sk163 nec transistor 2sk163 VOS-10 V. 9014 c 9014 transistor "2SK163"
Text: P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SJ44 DESCRIPTION The 2SJ44 h designed for use in driver stage of AF low noise amplifier. FEATURES «Low Noise F iguro en-1.5 nV/\/HÏ TYP. (Vos—10 V. I0—1.0 mA. f-1.0 kHz) NV £ 20 mV • High Voltage. High IVftl, and Wide Dynamic Range Vgdo*40V lVfl 1=9.0 mS TYP. (Vos—10 V. I0—1.0 mA. f-1.0 kHz) • Complementary to NEC 2SK163 ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature . -55 to +125 °C Junction


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PDF 2SJ44 2SJ44 2SK163 SC-43A Vqs-20 nec 2sk163 2sk163 2sk163 transistor 2sk163 nec transistor 2sk163 VOS-10 V. 9014 c 9014 transistor "2SK163"
nec 2sk163

Abstract: 2SK163 2SJ44 nec j44 2sk163 nec
Text: ELECTRON DEVICE NEC DESCRIPTIO N am plifier. FEA TU R ES P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SJ44 The 2SJ44 is designed fo r use in driver stage o f A F low noise PACKAGE D IM EN SIO N S in m illim e te r s (in ch e s) 5.2 MAX (0 2 0 4 MAX ) · Low Noise Figure en = 1.5 n V /v /H ÏT V P . (V DS= - 1 0 V , l D- 1.0 m A , f = 1.0 kHz) N V S 20 m V · High Voltage, High lv f s I, and Wide D ynam ic Range V qdO ^ 4 0 V lYfs != 9.0 mS TYP. (V DS = -1 0 V , l D =-1.0 m A , f= 1 .0 kHz} ·


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PDF 2SJ44 2SJ44 2SK163 nec 2sk163 2SK163 nec j44 2sk163 nec
2SJ18

Abstract: 2SJ56 2sk176 2SJ51 2SK151 2SK60 2SJ20 2M150S-050 2SJ56 2sk133 2Sj48 2SJ49 2sk134
Text: . 1« 30 -0. 5m -12m -10 0. 2 3 -10 -10« 3m 9m -10 IDSS 2SJ44 NEC LF LN A P D 40 GDO 40 0 -10m G , 2SJ43 50 10 0 0 NV=20Vmax ffi^SSSiciS 53A DCS 2SJ44 50 10 0 -10 NV=50mVmax 53A DGS


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PDF 2MI50F-050 2M150S-050 2N4392 -100p 2N4393 2SJ11 -12Vjnax 2SK132 2SJ48 2SJ18 2SJ56 2sk176 2SJ51 2SK151 2SK60 2SJ20 2M150S-050 2SJ56 2sk133 2Sj48 2SJ49 2sk134
2sk152 equivalent

Abstract: 2SJ44 2SK113 2SK152
Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese InterFET Process Unit Limit V M in nA M ax V M in /M a x mA M in /M a x mS T yp pF T yp pF T yp IFN113 IFN152 IFN363 IFP44 PJ99 NJ132 NJ132L NJ450 N Channel -5 0 1.0 ( - 20 V) -0 .3 /-1 0 (20 V) 5.0/150 (20 V) 20 (20 V) 10 (0) (20 V) 3.0 (0) (15 V) T O - 18 SDG N Channel -2 0 0.1 (-10 V) -0 .5 /-2 .0 (10V) 5.0/20 (10V) 30 (10V) 15 (0


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152
IFN152

Abstract: 2SJ44 2SK152 2SK113 2SK363 NJ450 IFP44
Text: 9-97 t ó SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N Channel N Channel N Channel P Channel Unit Limit Parameters -50 -20 -40 25 V Min BVqss 1.0 (- 20 V) 0.1 (— 10 V) 1.0 (- 30 V) 1.0 (10V) nA Max Igss -0.3/-10 (20 V) - 0.5/- 2.0 (10V) -0.3/-1.2 (10 V) -0.2/- 1.5 e iov) V Min/Max V gs (Off) 5.0/150 (20 V) 5.0/20 (10V) 5.0/30 (10V) 1.0/18 (-10 V) mA Min/Max Idss 20 (20 V) 30 (10V) 60 (10V) 9


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450
Not Available

Abstract: No abstract text available
Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit -5 0 -2 0 -4 0 25 V M in 1.0 { - 20 V) 0.1 ( - 1 0 V) 1.0 (—30 V) 1.0 (10V) nA Max - 0 .5 /- 2.0 (10V) - 0 .3 /-1 .2 (10 V) - 0 . 2


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L
2sj44

Abstract: IFP44 PJ99 j174 transistor
Text: G 30 PJ99 Process 9-97 SILICON JUNCTION FIELD-EFFECT TRANSISTOR · GENERAL PURPOSE AMPLIFIER · ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, Ts 10 mA +150°C -65°C to +175°C Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 Datasheet IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P Die Size = 0 .0 2 1 " X 0 .0 2 1" All


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PDF 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFP44 PJ99 j174 transistor
1999 - 2SK105 DGS

Abstract: 2SK105 V6010 2sj44
Text: Channel 2SK363 IFN363 NJ450 N Channel 2SJ44 IFP44 PJ99 P Channel Japanese InterFET Process


Original
PDF 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59 2SK105 IFN105 O-226AA 2SK105 DGS V6010 2sj44
2001 - 2sk152 equivalent

Abstract: IFN152 2SK152 INTERFET 2SJ44 IFP44 2SK113 10 V JFET TO18 IFN113
Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters ­ 50 ­ 20 ­ 40 25 V Min BVGSS 1.0 (­ 20 V) 0.1 (­10 V) 1.0 (­ 30 V) 1.0 (10 V) nA Max IGSS ­ 0.3/­10 (20 V) ­


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent IFN152 2SK152 INTERFET 2SJ44 IFP44 2SK113 10 V JFET TO18 IFN113
1999 - 2sj44

Abstract: J177 equivalent PJ99 j177 equivalent transistor
Text: F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C ­ 65°C to +175°C G S-D S-D G Die Size = 0.021" X 0.021" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116


Original
PDF 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 J177 equivalent PJ99 j177 equivalent transistor
transistor gfs

Abstract: P1087 P1086 J177 J175 J174 IFP44 2N3993A 2N3993 VCR3P
Text: G 30 PJ99 Process SILÌCONJUNCTÌONTÌELD^EFFE • GENERAL PURPOSE AMPLIFIER • ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig 10 mA Operating Junction Temperature, T j +150°C Storage Temperature, Ts -65°C to +175°C Devices in this Databook based on the PJ99 Process. Datasheet Datasheet IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P 9-97 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 Die Size = 0.021" X 0.021" All


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PDF IFP44 P1086, P1087 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 transistor gfs P1086 J177 J175 J174 IFP44 2N3993 VCR3P
2010 - e175 Siliconix

Abstract: E175 fet MMBFJ174 2N5475 InterFET u301 u301 siliconix 50T23 InterFET 2N5798 55T175
Text: SMP5462 TMPF5462 2N5462 2SJ44 ~44 2SJ45 2SJ45 U301 U300 2SJ125 2SJ40 See Index Interfet 5 prpueElec


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PDF 2N3386 5MPJ271 TMPFJ271 J175-18 MMBFJ175 5MPU305 5MP5115 TMPFU305 TMPF5115 e175 Siliconix E175 fet MMBFJ174 2N5475 InterFET u301 u301 siliconix 50T23 InterFET 2N5798 55T175
2SJ72

Abstract: 2sj28 2sj26 2SJ83 2SJ99 2SJ96 2SJ82 2SJ18 2SJ90 2SJ73
Text: Absolutes maximum ratings (Ta=25ºC) PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40 2SJ43 2SJ44 2SJ45 2SJ47 2SJ48 2SJ49 2SJ50 2SJ51 2SJ55 2SJ56 2SJ68 2SJ69 2SJ70 2SJ72 2SJ73 2SJ74 2SJ75 2SJ76 2SJ77 (V) mode (V) mode (mA) 100 60 20 20 20 18 18 20 170 140 100


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PDF 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ72 2sj28 2sj26 2SJ83 2SJ99 2SJ96 2SJ82 2SJ18 2SJ90 2SJ73
1999 - 2SK146

Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2sk152 equivalent 2SK147 Japanese Transistor
Text: Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44


Original
PDF 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2sk152 equivalent 2SK147 Japanese Transistor
2SK146

Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 equivalent transistor TO 2sk146 2SK152
Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters ­ 50 ­ 20 ­ 40 25 V Min BVGSS 1.0 (­ 20 V) 0.1 (­10 V) 1.0 (­ 30 V) 1.0 (10 V) nA Max IGSS ­ 0.3/­10 (20 V) ­


Original
PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2SK146 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 equivalent transistor TO 2sk146 2SK152
2sk1060

Abstract: 2SK type transistor 2sk 2SK105 Datasheet transistor 2sk193 transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK739
Text: -45F ­ 60 2SJ331 MP-88 ­ 60 2SJ448 MP-45F ­ 250 2SJ449 MP-45F ­ 250 1 ­4 , Package 2SJ44 TO-92 40 30 400 9.0 2SJ45 TO-92 40 30 400 9.0 TYP , 2SJ448 (2.0) q 2SK2353 (1.4) q 2SK2354 (1.5) 2SK2355 (1.4) 4.5 2SK2356 (1.5) 2SK2481 (4.0 , ) 2SK2372 (0.27) q 2SJ449 (0.8) 6.0 14 2SK2134 (0.4) q 2SK2135 (0.18) 15 16 20 25


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PDF 2SK104 2SK105 2SK162 2SK163 2SK193 2SK195 2SK505 X10679EJCV0SG00 1996P 2sk1060 2SK type transistor 2sk 2SK105 Datasheet transistor 2sk193 transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK739
1993 - 2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Text: No file text available


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PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: No file text available


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PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
1997 - micro servo 9g

Abstract: micro servo 9g tower pro uPa2003 2SK1060 uPD3599 201 Zener diode 2SK2396 infrared sensor TSOP - 1836 2SK518 upc1237
Text: No file text available


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PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g micro servo 9g tower pro uPa2003 2SK1060 uPD3599 201 Zener diode 2SK2396 infrared sensor TSOP - 1836 2SK518 upc1237
1996 - uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: No file text available


Original
PDF PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
1996 - MICROPROCESSOR Z80

Abstract: uPD72020 UPD77529 transistor 2p4m UPD6487 2SJ 3305 uPC5102 2SD1557 micro servo 9g tower pro TRANSISTOR SOD MARKING CODE 352A
Text: No file text available


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PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 UPD77529 transistor 2p4m UPD6487 2SJ 3305 uPC5102 2SD1557 micro servo 9g tower pro TRANSISTOR SOD MARKING CODE 352A
Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 D1N750 Q2N1132 D02CZ10 D1N751
Text: No file text available


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PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 D1N750 Q2N1132 D02CZ10 D1N751
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: No file text available


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PDF
t110 94v 0

Abstract: PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
Text: No file text available


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PDF Barcelona-28, S-171 CH-5400 t110 94v 0 PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
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