The Datasheet Archive

2SJ419 datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
2SJ419 2SJ419 ECAD Model Sanyo Semiconductor Ultrahigh-speed switching Original PDF
2SJ419 2SJ419 ECAD Model Toshiba Power MOSFETs Cross Reference Guide Original PDF
2SJ419 2SJ419 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ419 2SJ419 ECAD Model Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
2SJ419 2SJ419 ECAD Model Sanyo Semiconductor Medium Power Output MOSFETs Scan PDF

2SJ419 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SJ419

Abstract: qa25 x1cv
Text: Ordering number : EN5313A I No.5313A _ 2SJ419 P-Channel MOS Silicon FET Ultrahigh-Speed Switching Applications Features • Low ON-resis tance. • Ultrahigh-speed switching. ■2.5V drive. Absolute Maximum , -1.0 -1.2 V Switching Time Test Circuit vdd—6v out P.G 2SJ419 Package Dimensions 2116 (unit : mm) ib , .5313-1/3 2SJ419 -10 -8 < I q ~ -6 fl O -4 s '3 -2 Id - Vds / 1 / -1.7 V , _Crss '0 -2 -4 -6 -8 -10 -12 Drain-to-Source Voltage, VDS — V -14 No.5313-2/3 2SJ419 1000 7


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PDF EN5313A 2SJ419 1200mm2 qa25 x1cv
2004 - Not Available

Abstract: No abstract text available
Text: Ordering number:EN5313A P-Channel Silicon MOSFET 2SJ419 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2116 [ 2SJ419 ] 5 4 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 , )/O2196YK (KOTO) TA-0192 No.5313–1/4 2SJ419 Continued from preceding page. Parameter Symbol , No.5313–2/4 2SJ419 No.5313–3/4 2SJ419 Specifications of any and all SANYO products


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PDF EN5313A 2SJ419 2SJ419]
DC11-4

Abstract: 2SJ419 ITR00524 ITR00525 ITR00526 ITR00527 ITR00528 ITR00529 ITR00530
Text: No. N 5 3 1 3 A 2SJ419 No. 5 3 1 3 A 52599 No. 5313 2SJ419 P MOS 2.5V Absolute Maximum Ratings / Ta=25 VDSS DC IDP PD ± 10 -4 - 32 2.0 A , 1.5 5.0 2SJ419 0.595 1.27 0.43 0.1 S 0.2 1 : Source 2 : Source 3 : Source , / 71796SI TA-0192 / O0395YK No.5313-1/3 2SJ419 min Ciss Coss Crss td(on) VDS= - , , ID - A -10 2 3 ITR00529 No.5313-2/3 2SJ419 IS - VSD 2 Ciss, Coss, Crss


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PDF 2SJ419 1200mm2 ITR00531 1200mm2 ITR00530 ITR00533 ITR00534 DC11-4 2SJ419 ITR00524 ITR00525 ITR00526 ITR00527 ITR00528 ITR00529 ITR00530
1999 - 2SJ419

Abstract: No abstract text available
Text: Ordering number:EN5313A P-Channel Silicon MOSFET 2SJ419 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2116 [ 2SJ419 ] 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 , , TOKYO, 110-8534 JAPAN 41599TH (KT)/O2196YK (KOTO) TA-0192 No.5313­1/4 2SJ419 Continued from , V Switching Time Test Circuit No.5313­2/4 2SJ419 No.5313­3/4 2SJ419


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PDF EN5313A 2SJ419 2SJ419] 2SJ419
FW201

Abstract: 2SJ469
Text: ) 0.4/1.4 2SJ419 2SJ420 2SJ421 2SJ468 2SJ469 2SK2440 2SK2441 2SK2442 2SK2556 2SK2557 FW1Q1 FW1Ö2 , * Mounted on aceram ic board (1000mm2 x 0.8mm), ( 2SJ419 ,2SJ468,2SK2440.2SK2556; 1200mm2 x 0.8mm) t VGs =


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PDF 2SK2557 FW103 FW201 FW202 FW203 40/58T 115/165T 1000mm2 2SJ419 2SJ468 2SJ469
Not Available

Abstract: No abstract text available
Text: 400 1000 1200 650 170 400 1000 1300 650 Dual Duai 2SJ381 FX207 2SJ382 2SJ383 2SJ419 2SJ420 FW101


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PDF 2SJ381 FX207 2SJ382 2SJ383 2SJ419 2SJ420 FW101 2SK2316 FX208 2SK2317
2SK2153

Abstract: 2SJ332S
Text: ) 170 400 Notes 2SJ381 2SJ382 2SJ383 2SJ419 2SJ42Q FW1Ò4 FWÎOi 2SK2316 2SK2317 2SK2318 2SK2440


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PDF 2SJ381 2SJ382 2SJ383 2SJ419 2SJ42Q 2SK2316 2SK2317 2SK2318 2SK2440 2SK2441 2SK2153 2SJ332S
2SK2637

Abstract: No abstract text available
Text: LD Series Lineup VDss = 12 V, P-channel » 'iifflP . 1 tm Absolute maximum Type No. Package Electrical characteristics at Ta = 25°C Vostofl) min to R d s (on) « o V OSS * * - (V) 2SJ316 2SJ335 2SJ381 FX207 FX601 2SJ336 2SJ337 2SJ382 2SJ383 2SJ419 2SJ420 FW101 FW104 SOP8 TP (V) m 1.0 0.5 2.0 *0 m 3.5* Pd iypt/iwix ut max M ' Vg s = 4V VfigstOV iti) 0.45/0.63 (Ü) 0.3/0.42 1.0/1.4 0.4/0.7* 0.185/0.3* 0.3/0.42 M typ (S) 1.2 Clas


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PDF 2SJ316 2SJ335 2SJ381 FX207 FX601 2SJ336 2SJ337 2SJ382 2SJ383 2SJ419 2SK2637
2SJ468

Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
Text: 30* 150 1 to 2.5 0.1 4.0 10 6 10 4 2SJ419 SOP8 Ultrahigh-speed switching 12 ±10 4.0 2 150 0.4 to


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PDF 2SJI88 2SJ189 2SJ191 2SJ192 2SJ194 2SJ195 2SJ253 T0220 2SJ260 2SJ468 2SJ271 2SJ281 2SJ336
2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 2SJ591LS 2SJ652 2SJ261 - 2SJ418 - 2SJ594 - 2SJ262 - 2SJ419 - 2SJ595


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PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: 2SJ419 2SJ420 2SJ438 2SJ464 2SJ468 2SJ469 Manufacturer IR IXYS Philips Samsung SGS Thompson


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PDF
2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: 2SJ417 - 2SJ591LS 2SJ652 2SJ261 - 2SJ418 - 2SJ594 - 2SJ262 - 2SJ419


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PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Text: 0.3/0.42 1/1.4 170 50 170 2SJ419 2SJ420 S0P8 ±10 ±10 4 5 ★2 2 0.4-1.4 0.4-1.4 8 12 90m/144m 70m


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PDF SC-63 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> IRF 850 mosfet Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
1999 - IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: 2SJ380 2SJ402 2SJ412 2SJ419 2SJ420 2SJ438 2SJ464 2SJ468 2SJ469 2SK2146 2SK2266 2SK2311 2SK2314 2SK2440


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PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS (V) RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509 2SJ511 2SJ512 2SJ513 2SJ514 2SJ515 2SJ516 2SJ525 2SJ537 2SK1119 2SK1120 2SK1359 2SK1365 2SK1489 2SK1930 2SK2173 2SK2200 2SK2201 2SK2229 2SK2231 2SK2232 2SK2233 2SK2266 2SK2267


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
IGBT M16 100-44

Abstract: GM378 SEMICON INDEXES Ericsson SPO 1410 Kt606 Transistor B0243C ASEA HAFO AB transistor 8BB smd Ericsson RBS 6102 GD243
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 GM378 SEMICON INDEXES Ericsson SPO 1410 Kt606 Transistor B0243C ASEA HAFO AB transistor 8BB smd Ericsson RBS 6102 GD243
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