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2SJ412 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
2SJ412 2SJ412 ECAD Model Toshiba Power MOSFETs Cross Reference Guide Original PDF
2SJ412 2SJ412 ECAD Model Toshiba TRANS MOSFET P-CH 100V 16A 3(2-10S1B) Original PDF
2SJ412 2SJ412 ECAD Model Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SJ412 2SJ412 ECAD Model Toshiba Original PDF
2SJ412 2SJ412 ECAD Model Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
2SJ412 2SJ412 ECAD Model Toshiba P-Channel MOSFET Scan PDF
2SJ412 2SJ412 ECAD Model Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV) Scan PDF

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2003 - J412

Abstract: 2SJ412
Text: 2SJ412 PMOS (L2-MOSV) 2SJ412 DC-DC · 4 V · : mm : RDS (ON) = 0.15 , 2009-09-29 2SJ412 (Ta = 25 , ]] RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SJ412 ID ­ VDS , ) 2009-09-29 2SJ412 RDS (ON) ­ Tc IDR ­ VDS -30 0.5 Tc = 25°C -4 (A) ID = -8 , 100 (nC) 2009-09-29 2SJ412 rth ­ tw 3 () rth (t)/Rth (ch-c) 1 Duty = 0.5 0.5


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PDF 2SJ412 2-10S1B J412 2SJ412
SJ412

Abstract: 2SJ412 TRANSISTOR BC 208
Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 , 2002-06-26 TOSHIBA 2SJ412 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , 2002-06-26 TOSHIBA 2SJ412 id - vds id - vds -4 -8- A /' íty - a 3 -10 - y , -0.1 -0.3 -1 -3 DRAIN CURRENT ID (A) -10 -20 3 2002-06-26 TOSHIBA 2SJ412 5000 3000 1000 500 , 4 2002-06-26 TOSHIBA 2SJ412 rth - tv j < as "9 Ed ¿ X S H j- H ¿f M s Ü z§ HCd Hh gÃ


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PDF 2SJ412 SJ412 SJ412 2SJ412 TRANSISTOR BC 208
KIV* diode

Abstract: marking 77s
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2 -tt-M O SV ) 2SJ412 i , TOSHIBA 2SJ412 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current D rain , Alphabet A) - Year (Last Num ber of the C hristian Era) 1997 12-11 - 2/5 TOSHIBA 2SJ412 , ) -1 0 -2 0 DRAIN CURRENT DRAIN CURRENT 1997 12-11 - 3/5 TOSHIBA 2SJ412 , - 4/5 TOSHIBA 2SJ412 rth - t\ PULSE WIDTH % (s) SAFE OPERATING AREA 300


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PDF 2SJ412 O-22QFL --60V) --16A KIV* diode marking 77s
marking 77s

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2 -tt-M O SV ) 2SJ412 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE , change w ith o u t notice. 1997 12-11 - 1/5 TO SHIBA 2SJ412 ELECTRICAL CHARACTERISTICS , < <3 VOLTAGE o f H > o O 03 -V " i to 3 03 O C § P3 o 2SJ412 TO SHIBA 2SJ412 Rd s (o n ) - Te IDR - VDS CAPACITANCE - V d S Vth - Tc o < J o > Q J O 5


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PDF 2SJ412 O-22QFL 0-15il --60V) 20kf2) --25V, marking 77s
2004 - TRANSISTOR j412

Abstract: J412 2SJ412
Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ412 DC-DC , . 1 JEDEC JEITA TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 2004-07-06 2SJ412 , package or lead (Pb)-free finish. 2 2004-07-06 2SJ412 ID ­ VDS ID ­ VDS -20 -5 -4 , 2SJ412 IDR ­ VDS -30 Common source Common source Tc = 25°C ID = -8 A -4 -8 0.3 -2 , Total gate charge Qg (nC) 4 2004-07-06 2SJ412 Normalized transient thermal impedance rth


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PDF 2SJ412 TRANSISTOR j412 J412 2SJ412
2006 - TRANSISTOR j412

Abstract: No abstract text available
Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ412 DC-DC , electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 2SJ412 Electrical Characteristics (Ta , )-free finish. 2 2006-11-16 2SJ412 ID ­ VDS -5 -4 -4 -8 -3 -16 -20 -8 ID ­ VDS Common , ID (A) Drain current ID (A) 3 2006-11-16 2SJ412 RDS (ON) ­ Tc RDS (ON) () 0.5 , Gate-source voltage -60 VDS VDD = -80 V -12 VGS (V) 2SJ412 rth ­ tw Normalized transient


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PDF 2SJ412 2-10S1B TRANSISTOR j412
TRANSISTOR j412

Abstract: 2SJ412 J412
Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ412 DC-DC , . 1 2006-11-16 2SJ412 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ412 ID ­ , 2006-11-16 2SJ412 IDR ­ VDS -30 Common source Common source Pulse test Tc = 25°C -4 (A , charge Qg (nC) 4 2006-11-16 2SJ412 Normalized transient thermal impedance rth (t)/Rth (ch-c


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PDF 2SJ412 TRANSISTOR j412 2SJ412 J412
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M OS TYPE (L2-tt-M O SV ) 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE , 1/5 TOSHIBA 2SJ412 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SY M BO L C H A R A C T E R , < 2SJ412 N> <> T S SOURCE i > I o o 3 N ! COMMON T = 25°C c ö ID 2SJ412 R d s (o n ) - Te IDR - VDS CAPACITANCE


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PDF 2SJ412 O-220FL
Not Available

Abstract: No abstract text available
Text: T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS 2SJ412 SILICON P CHANNEL MOS TYPE (L2 -?r-MOSV) DC-DC CONVERTER, RELAY DRIVE AND MOTOR , ith o u t notice. F.TA.T 0 0 2000 03-22 1/5 - T O S H IB A 2SJ412 ELECTRICAL , 2SJ412 id - vds id - vds < Q id - vgs Q > C d H J O > 63 ü öS D O Ü vds - , - T O S H IB A 2SJ412 R d s (o n ) - Te -3 0 id r COM M ON SOURCE - vds T


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PDF 2SJ412 O-220FL
Not Available

Abstract: No abstract text available
Text: T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS 2SJ412 SILICON P CHANNEL MOS TYPE (L2 -?r-MOSV) DC-DC CONVERTER, RELAY DRIVE AND MOTOR , herein is subject to change w ith o u t notice. 0 0 2000 02-01 1/5 - T O S H IB A 2SJ412 , T O S H IB A 2SJ412 id - vds id - vds < Q id - vgs vds - , CURRENT ID (A) -10 -20 2000 02-01 3/5 - T O S H IB A 2SJ412 R d s (o n ) - Te -3 0 id


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PDF 2SJ412 O-220FL
2SJ412

Abstract: marking 77s
Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-7r-MOSV) 2 S J 4 1 2 , without notice. 1999-05-26 1/5 TOSHIBA 2SJ412 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC , (Last Number of the Christian Era) 1999-05-26 2/5 TOSHIBA 2SJ412 id - VDS id - VDS -3 -2 -1 -8- A /' , -0.3 -1 -3 -10 -20 DRAIN CURRENT ID (A) 1999-05-26 3/5 TOSHIBA 2SJ412 55 ~ O £ Cd ° Ö m co £ 0.5 , -20 -16 -12 0 20 40 60 80 100 TOTAL GATE CHARGE Q„ (nC) 1999-05-26 4/5 TOSHIBA 2SJ412 rth - tv j


OCR Scan
PDF 2SJ412 marking 77s
2009 - TRANSISTOR j412

Abstract: J412 2SJ412
Text: 2SJ412 Silicon P Channel MOS Type (L2-MOSV) TOSHIBA Field Effect Transistor 2SJ412 DC-DC , 2009-09-29 2SJ412 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , 2SJ412 ID ­ VDS ID ­ VDS -5 -20 -4 -10 Common source Tc = 25°C Pulse test -8 , 2009-09-29 2SJ412 IDR ­ VDS -30 Common source Common source Pulse test Tc = 25°C -4 (A , charge Qg (nC) 4 2009-09-29 2SJ412 Normalized transient thermal impedance rth (t)/Rth (ch-c


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PDF 2SJ412 TRANSISTOR j412 J412 2SJ412
2SJ412

Abstract: No abstract text available
Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 , 1/6 TOSHIBA 2SJ412 THERMAL CHARACTERISTICS Note ; * Repetitive rating ; Pulse Width Limited by , 2000-08-09 2/6 TOSHIBA 2SJ412 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , ) 2000-08-09 3/6 TOSHIBA 2SJ412 id - vds id - vds -4 -8- A /' it/ .At 3 -10 - V , -0.1 -0.3 -1 -3 DRAIN CURRENT ID (A) -10 -20 2000-08-09 4/6 TOSHIBA 2SJ412 0.5 0.4 0.3 0.2


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PDF 2SJ412 SJ412 2SJ412
2SJ412

Abstract: marking 77s
Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , 2SJ412 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , (Last Number of the Christian Era) 1997-12-11 2/5 TOSHIBA 2SJ412 ID - vds id - vds -4 -2 -8- , -0.3 -1 -3 -10 -20 DRAIN CURRENT ID (A) 1997-12-11 3/5 TOSHIBA 2SJ412 0.5 0.4 0.3 0.2 0.1 RDS , -20 -16 -12 -4 0 20 40 60 80 100 TOTAL GATE CHARGE Q„ (nC) 1997-12-11 4/5 TOSHIBA 2SJ412


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PDF 2SJ412 O-22QFL 2SJ412 marking 77s
mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: IXTH BUK SSD, SF ST SI 2SK, 2SJ NDT Industry Part Number 2SJ334 2SJ380 2SJ402 2SJ412


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PDF
K2057

Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
Text: (0.0065)6 TPC8016-H(0.0055)6 16 2SJ412 (0.21)4 2SJ619(0.21)4 18 2SJ464(0.09)4 2SJ620(0.09)4 , . Equivalent Existing Product 48 2SJ412 140 2SJ464 62 110 Newly developed Newly developed , 2SJ508 2SJ509 2SJ380 2SJ412 2SJ464 RDS(ON) () VDSS (V) ID (A) PD (W) - 30 -2


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PDF BCE0017A 2SK2610) 2SK794) K2057 toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
2sk3625

Abstract: 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917
Text: ) 2SJ412 (0.21) 2SJ619 (0.21) PTPC8114 (0.0045) NTPC8018-H (0.0046) 2SJ464 (0.09) 2SJ620 (0.09 , 1.5 2SJ380 -100 -12 2SJ619 -100 -16 2SJ412 -100 -16 60 2SJ464 -100


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917
1999 - IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: 2SJ380 2SJ402 2SJ412 2SJ419 2SJ420 2SJ438 2SJ464 2SJ468 2SJ469 2SK2146 2SK2266 2SK2311 2SK2314 2SK2440


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PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: ) 2SJ412 (0.21) 2SJ619 (0.21) PTPC8114 (0.0045) NTPC8018-H (0.0046) 2SJ464 (0.09) 2SJ620 (0.09 , 1.5 2SJ380 -100 -12 2SJ619 -100 -16 2SJ412 -100 -16 60 2SJ464 -100


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS (V) RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509 2SJ511 2SJ512 2SJ513 2SJ514 2SJ515 2SJ516 2SJ525 2SJ537 2SK1119 2SK1120 2SK1359 , '99 -2- Toshiba Note Replacement 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
2sK2750 equivalent

Abstract: 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625
Text: PowerMosfet-Brosch.indd 9 03.05.2007 13:54:29 Uhr 10 T O-220FL/SM Part Number 2SJ312 2SJ401 2SJ402 2SJ412


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PDF POWERMOSFET07) TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105 D-40549 2sK2750 equivalent 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625
2SK2056

Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Text: 2 - -MOSIV Non-Promotion 2 2SJ360 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412


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PDF 2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Text: ) 2SK2968(1.25) 10 13 14 2SK2698(0.4)2 2SK3314(0.48) 2SJ412 (0.21) 2SJ619(0.21) 20 , 35 TO-220NIS 0.15 0.21 ­ 10 ­6 0.25 0.32 ­4 ­6 48 2SJ412 ­ 100


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PDF O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: N TPC8017-H(0.0066) 15 NS TPC8A02-H(0.0056) 2SJ412 (0.21) 2SJ619(0.21) P TPC8114(0.0045 , ­10 ­0.5 ­6 1.68 0.25 2.5 0.32 ­4 ­4 ­0.5 ­6 6.3 48 48 2SJ412 ­100


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2SJ412 (0.21) 2SJ619 (0.21) N TPC8033-H (0.0053) NS TPC8A03-H (0.0056) N TPC8039-H (0.0059) 18


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PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
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