The Datasheet Archive

2SJ402 datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
2SJ402 2SJ402 ECAD Model Toshiba TRANS MOSFET P-CH 60V 30A 3(2-10S2B) Original PDF
2SJ402 2SJ402 ECAD Model Toshiba Power MOSFETs Cross Reference Guide Original PDF
2SJ402 2SJ402 ECAD Model Toshiba P-Channel MOSFET Original PDF
2SJ402 2SJ402 ECAD Model Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SJ402 2SJ402 ECAD Model Toshiba Original PDF
2SJ402 2SJ402 ECAD Model Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications Scan PDF
2SJ402 2SJ402 ECAD Model Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV) Scan PDF
2SJ402(Q) 2SJ402(Q) ECAD Model Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 30A TO-220FL Original PDF

2SJ402 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - J402

Abstract: 2SJ402
Text: 2SJ402 2 PMOS (L -MOS) 2SJ402 DC-DC : mm 4V : RDS (ON) = 29 m () : |Yfs| = 23 S () : IDSS = -100 A () (VDS = -60 V) : Vth = -0.8-2.0 V (VDS = -10 VID = -1 mA , : 1.5 g () MOS 1 2009-09-29 2SJ402 (Ta = 25 , 27 (EU 2002/95/EC) 2 2009-09-29 2SJ402 3 2009-09-29 2SJ402 4 2009-09-29 2SJ402 5 2009-09-29 2SJ402 · · · ·


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PDF 2SJ402 2-10S1B 2002/95/EC) J402 2SJ402
2002 - 2SJ402

Abstract: No abstract text available
Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON , . JEDEC JEITA TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 1 2002-06-27 2SJ402 , Marking 2 2002-06-27 2SJ402 3 2002-06-27 2SJ402 4 2002-06-27 2SJ402 5 2002-06-27 2SJ402 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 2SJ402 2SJ402
2006 - transistor j402

Abstract: J402 TOSHIBA
Text: 2SJ402 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Applications z 4-V gate drive z Low drain-source ON resistance z , . Please handle with caution. Weight: 1.5 g (typ.) 1 2006-11-16 2SJ402 Electrical , 2006-11-16 2SJ402 3 2006-11-16 2SJ402 4 2006-11-16 2SJ402 5 2006-11-16 2SJ402 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to change without


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PDF 2SJ402 transistor j402 J402 TOSHIBA
2002 - 2SJ402

Abstract: No abstract text available
Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain-source ON , . JEDEC JEITA TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 1 2002-06-27 2SJ402 , Marking 2 2002-06-27 2SJ402 3 2002-06-27 2SJ402 4 2002-06-27 2SJ402 5 2002-06-27 2SJ402 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 2SJ402 2SJ402
2004 - transistor j402

Abstract: J402 TOSHIBA 2SJ402 J402
Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON , JEITA TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 1 2004-07-06 2SJ402 Electrical , 2004-07-06 2SJ402 3 2004-07-06 2SJ402 4 2004-07-06 2SJ402 5 2004-07-06 2SJ402 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is subject to


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PDF 2SJ402 transistor j402 J402 TOSHIBA 2SJ402 J402
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2 -tt-M O SV ) 2SJ402 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE , is subject to change w ith o u t notice. 1997 12-11 - 1/5 TOSHIBA 2SJ402 ELECTRICAL , Christian Era) 1997 12-11 - 2/5 TOSHIBA 2SJ402 id < - vds < id - vds Q H 2 , TOSHIBA 2SJ402 Rd s (o n ) - Te -100 IDR - V d S Q H 2 a as « ¡3 H S H > a »5 0.4 0.8 1.2


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PDF 2SJ402 O-22QFL --100/tA --50V, 747//H
J402 TOSHIBA

Abstract: transistor j402 2SJ402 J402
Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON , electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 2SJ402 Electrical Characteristics (Ta , 2006-11-16 2SJ402 3 2006-11-16 2SJ402 4 2006-11-16 2SJ402 5 2006-11-16 2SJ402 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information contained herein is subject to


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PDF 2SJ402 J402 TOSHIBA transistor j402 2SJ402 J402
2SJ402

Abstract: No abstract text available
Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J 4 0 2 , 2SJ402 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , (Last Number of the Christian Era) 1999-02-18 2/5 TOSHIBA 2SJ402 -10 id - VDS id - VDS -6 -4 -2 -10- -1 , ) 1999-02-18 3/5 TOSHIBA 2SJ402 Ed Ü ¡5 I _ öS £ ~ o £ aS Q co 03 Q CO 0.20 0.16 0.12 0.08 0.04 RDS(ON) - , TOTAL GATE CHARGE Q„ (nC) 200 1999-02-18 4/5 TOSHIBA 2SJ402 rth - tv PULSE WIDTH tw (s) SAFE OPERATING


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PDF 2SJ402 O-220FL
2009 - J402

Abstract: 2SJ402
Text: 2SJ402 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ402 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON , electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SJ402 Electrical Characteristics (Ta , electrical and electronic equipment. 2 2009-09-29 2SJ402 3 2009-09-29 2SJ402 4 2009-09-29 2SJ402 5 2009-09-29 2SJ402 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and


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PDF 2SJ402 J402 2SJ402
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2 -7r-MOS V , to change w itho ut notice. 1999 02-18 - 1/5 TOSHIBA 2SJ402 ELECTRICAL , (Starting from Alphabet A) —Year (Last Number of the Christian Era) - TOSHIBA 2SJ402 id , 02-18 - 3/5 TOSHIBA 2SJ402 Rd s (o n ) - Te IDR - VDS CAPACITANCE - V d S Vth - Tc , £ g 1 3 < a, 5 z¡ O § Q 1999 02-18 - 4/5 TOSHIBA 2SJ402 rth â


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PDF 2SJ402 O-22QFL
2SJ402

Abstract: No abstract text available
Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , subject to change without notice. 1997-12-11 1/5 TOSHIBA 2SJ402 ELECTRICAL CHARACTERISTICS (Ta = 25 , TOSHIBA 2SJ402 ID - vds id - vds -10- 9 /1 /-3.5 COMMON SOURCE Tc = 25°C -8-" h , ID (A) 1997-12-11 3/5 TOSHIBA 2SJ402 Ed Ü ¡S I a? öS £ ~ o £ ss co ¡5 Q 0.20 0.16 , 120 160 TOTAL GATE CHARGE Q„ (nC) 200 1997-12-11 4/5 TOSHIBA 2SJ402 rth - tv Im 10m 100m


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PDF 2SJ402 747/aH, 2SJ402
2SJ40

Abstract: 2SJ402 EDW-100
Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , 2SJ402 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , Christian Era) 2000-06-27 2/5 TOSHIBA 2SJ402 ID - vds id - vds -10- 9 / 1 '-3.5 COMMON SOURCE Tc = , ) 2000-06-27 3/5 TOSHIBA 2SJ402 Ed Ü ¡5 I _ öS £ ~ o £ aS Q co 03 Q CO 0.16 0.12 0.08 0.04 , CHARGE Q„ (nC) 200 2000-06-27 4/5 TOSHIBA 2SJ402 rth - tv Duty = t/T Rth(ch-c) = 1.25°C/W 100 n


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PDF 2SJ402 O-22QFL 2SJ40 2SJ402 EDW-100
Not Available

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2- tt-M OSV) 2SJ402 , 2SJ402 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Drain Cut-off , ) i 1997 12-11 2/5 - TO SH IB A 2SJ402 id - vos ID - VDS DRAIN-SOURCE VOLTAGE , /5 - TO SH IB A 2SJ402 R d s (o n ) - Te IDR - VDS CAPACITANCE - V d S Vth - Tc , CASE TEMPERATURE Tc (°C) 1997 12-11 4/5 - TO SH IB A 2SJ402 rth - tw PULSE WIDTH


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PDF 2SJ402 --100//A 20kfi) ----50V,
mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: IXTH BUK SSD, SF ST SI 2SK, 2SJ NDT Industry Part Number 2SJ334 2SJ380 2SJ402 2SJ412


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2sk3625

Abstract: 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917
Text: ) 30 2SJ334 (0.038) 2SJ402 (0.038) NTPC8014-H (0.0095) 2SK3443 2SK2466 (0.046) 2SK3084 , ) 2SJ401 -60 -20 100 2SJ334 -60 -30 2SJ402 -60 -30 2SJ508 -100 -1


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917
1999 - IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: 2SJ380 2SJ402 2SJ412 2SJ419 2SJ420 2SJ438 2SJ464 2SJ468 2SJ469 2SK2146 2SK2266 2SK2311 2SK2314 2SK2440


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PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
K2057

Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
Text: (0.085)4 27 2SJ334(0.038)4 2SJ402 (0.038)4 30 2SK2466(0.046)6 2SK3084(0.046)6 2SK3443(0.055 , . 2SJ511 2SJ525 2SJ537 2SJ360 2SJ507 2SJ482 2SJ377 2SJ438 2SJ378 2SJ349 2SJ401 2SJ334 2SJ402


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PDF BCE0017A 2SK2610) 2SK794) K2057 toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: ) 30 2SJ334 (0.038) 2SJ402 (0.038) NTPC8014-H (0.0095) 2SK3443 2SK2466 (0.046) 2SK3084 , ) 2SJ401 -60 -20 100 2SJ334 -60 -30 2SJ402 -60 -30 2SJ508 -100 -1


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
2SK2056

Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Text: 2 - -MOSIV Non-Promotion 2 2SJ360 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412


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PDF 2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
2sK2750 equivalent

Abstract: 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625
Text: PowerMosfet-Brosch.indd 9 03.05.2007 13:54:29 Uhr 10 T O-220FL/SM Part Number 2SJ312 2SJ401 2SJ402 2SJ412


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PDF POWERMOSFET07) TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105 D-40549 2sK2750 equivalent 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625
2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: (0.021) 2SK1544 (0.2) 32 26 2SJ334 (0.038) 2SJ402 (0.038) TK30A06J3A (0.026) N TPCA8014-H


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PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: (0.0054) NS TPCA8A01-H(0.0056) 40 N TPCA8011-H(0.0035) N P P P N 2SJ334(0.038) 2SJ402 (0.038 , TO-220NIS 0.029 0.038 ­10 ­15 0.046 0.06 ­4 ­15 110 2SJ402 ­60


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Text: ) 2SK2789(0.085) 27 2SJ334(0.038) 2SJ402 (0.038) 30 2SK2466(0.046) 2SK3084(0.046) 27 2SK3443 , 0.046 0.06 ­4 ­ 15 110 2SJ402 ­ 60 ­ 30 100 TO-220FL/SM 0.029 0.038


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PDF O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: TPCA8014-H (0.009) N TPCM8002-H (0.0062) 2SJ334 (0.038) 2SJ402 (0.038) 27 2SK3443 (0.055) 2SK3176 , TO-220NIS 0.029 0.038 ­10 ­15 0.046 0.06 ­4 ­15 110 2SJ402 ­60


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PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS (V) RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509 2SJ511 2SJ512 2SJ513 2SJ514 2SJ515 2SJ516 2SJ525 2SJ537 2SK1119 2SK1120 2SK1359 , '99 -2- Toshiba Note Replacement 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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