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Toshiba America Electronic Components
2SJ380(F) MOSFET P-CH 100V 12A TO220NIS
2SJ380(F) ECAD Model
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2SJ380 datasheet (9)

Part ECAD Model Manufacturer Description Type PDF
2SJ380 2SJ380 ECAD Model Toshiba TRANS MOSFET N-CH 100V 12A 3(2-10R1B) Original PDF
2SJ380 2SJ380 ECAD Model Toshiba Original PDF
2SJ380 2SJ380 ECAD Model Toshiba Power MOSFETs Cross Reference Guide Original PDF
2SJ380 2SJ380 ECAD Model Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SJ380 2SJ380 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ380 2SJ380 ECAD Model Toshiba Field Effect Transistor Silicon P Channel MOS Type (Power (L, 2)-pi-MOS V) Scan PDF
2SJ380 2SJ380 ECAD Model Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications Scan PDF
2SJ380 2SJ380 ECAD Model Toshiba P-Channel MOSFET Scan PDF
2SJ380(F) 2SJ380(F) ECAD Model Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 12A TO220NIS Original PDF

2SJ380 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SJ380

Abstract: transistor 2sj380
Text: SEM ICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TO SH IBA TECHNICAL DATA 2SJ380 SILICON P CHANNEL MOS TYPE (L2-7T-MOS V) ( 2SJ380 ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS , set fo rth in the TO SH IB A Sem iconductor Reliability Handbook 2SJ380 - 1 _ 1996-09-02_ T O S H IB A C O R PORATION SEM ICONDUCTOR TO SH IBA 2SJ380 DATA TECHNICAL ( 2SJ380 ) ELECTRICAL CHARACTERISTICS (Ta = 25°C) TEST CONDITION ÏGSS VGS=±16V , VDS=0V ÏDSS V


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PDF 2SJ380 2SJ380) --60V) 20kfl) 2SJ380 transistor 2sj380
2SJ380

Abstract: No abstract text available
Text: SEM ICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TO SH IBA TECHNICAL DATA 2SJ380 SILICON P CHANNEL MOS TYPE (L2-7T-MOS V) ( 2SJ380 ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS , IB A Sem iconductor Reliability Handbook 2SJ380 - 1 _ 1996-09-02_ T O S H IB A CO RPO RA TIO N SEM ICONDUCTOR TO SH IBA 2SJ380 DATA TECHNICAL (2 SJ3 80 , -1 2 -4 8 1.7 - - 160 0.5 - A A V ns 2SJ380 - 2 1996-09-02 T O S H IB A CO RPO RA


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PDF 2SJ380 2SJ380) 0-15il --60V) 20kfi) 2SJ380 --25V,
2003 - J380

Abstract: 2sj380
Text: 2SJ380 PMOS (L2-MOSV) 2SJ380 DC-DC · 4 V · : mm : RDS (ON) = 0.15 , 25 , IAR = -12 A 3: MOS 1 2009-09-29 2SJ380 (Ta = 25 , ) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SJ380 ID ­ VDS ID ­ VDS -20 Tc = , Tc = 25°C -0.3 -1.0 3 -3 ID -10 -20 (A) 2009-09-29 2SJ380 RDS , ) 2009-09-29 2SJ380 rth/Rth (ch-c) ­ tw () rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.5 0.3


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PDF 2SJ380 SC-67 2-10R1B J380 2sj380
2SJ380

Abstract: No abstract text available
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J 3 8 0 , without notice. 1998-10-30 1/5 TOSHIBA 2SJ380 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC , 2/5 TOSHIBA 2SJ380 id - VDS COMMON SOURCE Te = 25°C /1 /—4 -3 /-6f -8^ , -0.3 -1.0 -3 -10 -20 DRAIN CURRENT ID (A) 1998-10-30 3/5 TOSHIBA 2SJ380 0.5 0.4 0.3 0.2 0.1 RDS(ON) - , C o 20 40 60 80 TOTAL GATE CHARGE Q„ (nC) 0 100 1998-10-30 4/5 TOSHIBA 2SJ380 rth - tv SAFE


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PDF 2SJ380
2004 - J380

Abstract: transistor j380 2SJ380
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-MOSV) 2SJ380 Relay , . Please handle with caution. 1 2004-07-06 2SJ380 Electrical Characteristics (Tc = 25 , (Pb)-free finish. 2 2004-07-06 2SJ380 ID ­ VDS Common source Tc = 25°C Pulse test , ID (A) -0.3 -1.0 Drain current 3 -3 -10 -20 ID (A) 2004-07-06 2SJ380 , Total gate charge Qg (nC) (°C) 4 2004-07-06 2SJ380 rth ­ tw Normalized transient


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PDF 2SJ380 J380 transistor j380 2SJ380
2007 - transistor j380

Abstract: 2SJ380 J380
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ380 Relay , . Please handle with caution. 1 2007-02-01 2SJ380 Electrical Characteristics (Tc = 25 , (Pb)-free finish. 2 2007-02-01 2SJ380 ID ­ VDS Common source Tc = 25°C Pulse test , -3 -10 -20 Drain current ID (A) 3 2007-02-01 2SJ380 IDR ­ VDS -30 Common , 40 0 100 Total gate charge Qg (nC) Case temperature Tc (°C) 4 2007-02-01 2SJ380


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PDF 2SJ380 transistor j380 2SJ380 J380
Not Available

Abstract: No abstract text available
Text: ) 2SJ380 2SJ380 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR , O SH IB A 2SJ380 ELECTRICAL CHARACTERISTICS (Ta = 25°C) C H A R A C T E R IS T IC G ate , - fxG 1998 01-14 - 2/5 TO SH IB A 2SJ380 id - vo s id - vos , TO SH IB A 2SJ380 Rd s (o n ) - Te IDR - VDS CASE TEMPERATURE Tc (°C , 01-14 - 4/5 TO SH IB A 2SJ380 rth - PULSE WIDTH % (s) SAFE OPERATING AREA 100


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PDF 2SJ380 --100/iA --60V) 20kf2) --12A,
Not Available

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2SJ380 , APPLICATIONS 2SJ380 INDUSTRIAL APPLICATIONS U nit in mm 10 ± 0.3 . 03.2 ± 0.2 2.7± 0.2 4V Gate Drive , contained herein is subject to change w ithout notice. 2000 02-02 - 1/5 TO SH IBA 2SJ380 , - 2000 02-02 - 2/5 TO SH IBA 2SJ380 ID - VDS id - vds DRAIN-SOURCE , ) 2000 02-02 - 3/5 TO SH IBA 2SJ380 R d s (o n ) - Te iDR - vds CAPACITANCE - V d


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PDF 2SJ380
2007 - Not Available

Abstract: No abstract text available
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ380 Relay , handle with caution. 1 2007-02-01 2SJ380 Electrical Characteristics (Tc = 25 , line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2007-02-01 2SJ380 ID ­ , 2SJ380 RDS (ON) ­ Tc (W) 0.5 Common source Pulse test 0.4 -4 -30 Common source Tc = 25°C I DR ­ , 2007-02-01 Gate-source voltage VGS 30 (V) 2SJ380 rth ­ tw 3 Normalized transient thermal


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PDF 2SJ380
2008 - transistor j380

Abstract: 2SJ380 J380
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ380 Relay , . Handle with care. 1 2008-01-28 2SJ380 Electrical Characteristics (Tc = 25°C) Characteristics , . A line indicates Lead (Pb)-Free 2 2008-01-28 2SJ380 ID ­ VDS Common source Tc = 25 , -3 -10 -20 Drain current ID (A) 3 2008-01-28 2SJ380 IDR ­ VDS -30 Common , Gate-source voltage PD ­ Tc 40 0 100 Total gate charge Qg (nC) 4 2008-01-28 2SJ380 rth


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PDF 2SJ380 transistor j380 2SJ380 J380
2006 - Not Available

Abstract: No abstract text available
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-MOSV) 2SJ380 Relay , 2006-11-16 2SJ380 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Drain , 2SJ380 ID ­ VDS -5 Common source Tc = 25°C Pulse test -10 -6 -20 -4 -8 -3 -16 Common source Tc = 25 , 2006-11-16 2SJ380 RDS (ON) ­ Tc () 0.5 Common source Pulse test 0.4 -4 -30 Common source ID = -8 A , = -80 V -12 VGS (V) 2SJ380 rth ­ tw 3 Normalized transient thermal impedance rth (t


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PDF 2SJ380
TS251

Abstract: 2SJ380
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , caution. 1 2002-08-14 TOSHIBA 2SJ380 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL , (Starting from Alphabet A) — Year (Last Number of the Christian Era) 2 2002-08-14 TOSHIBA 2SJ380 , -0.1 -0.3 -1.0 -3 drain current id (a) -10 -20 3 2002-08-14 TOSHIBA 2SJ380 0.5 0.4 0.3 0.2 , E-i C O TOTAL GATE CHARGE 80 (nC) 4 2002-08-14 TOSHIBA 2SJ380 rth - tv Duty = t/T Rth(ch-c) =


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PDF 2SJ380 TS251 2SJ380
2SJ380

Abstract: No abstract text available
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , contained herein is subject to change without notice. 2000-08-09 1/6 TOSHIBA 2SJ380 THERMAL , /6 TOSHIBA 2SJ380 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , Alphabet A) -Year (Last Number of the Christian Era) 2000-08-09 3/6 TOSHIBA 2SJ380 id - vds common , -0.1 -0.3 -1.0 -3 -10 -20 drain current id (a) 2000-08-09 4/6 TOSHIBA 2SJ380 0.5 0.4 0.3 0.2


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PDF 2SJ380 2SJ380
Not Available

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2SJ380 , APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance 2SJ380 INDUSTRIAL APPLICATIONS : R dS (ON) - , - 1/5 TO SH IBA 2SJ380 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate , 2000 03-22 - 2/5 TO SH IBA 2SJ380 ID - VDS id - vds D RA IN-SO U R CE VOLTAGE , ENT 2000 03-22 - 3/5 TO SH IBA 2SJ380 R d s (o n ) - Te IDR - VDS CAPACITANCE -


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PDF 2SJ380
2SJ380

Abstract: 015IL
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-tt-MOSV) 2 S J 3 8 0 , 2SJ380 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , Number of the Christian Era) 1998-01-14 2/5 TOSHIBA 2SJ380 id - vds COMMON SOURCE Te = 25°C /// /1 , -0.1 -0.3 -1.0 -3 -10 -20 DRAIN CURRENT ID (A) 1998-01-14 3/5 TOSHIBA 2SJ380 0.5 0.4 0.3 0.2 0.1 rds(on , TOTAL GATE CHARGE Q„ (nC) 0 100 1998-01-14 4/5 TOSHIBA 2SJ380 rth - tv 0.003 10 fi 100 (JL safe


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PDF 2SJ380 015IL
2009 - J380

Abstract: transistor j380 2SJ380
Text: 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ380 Relay , . Handle with care. 1 2009-09-29 2SJ380 Electrical Characteristics (Ta = 25°C) Characteristics , 2009-09-29 2SJ380 ID ­ VDS Common source Tc = 25°C Pulse test -4 -3 -8 -10 -16 -6 , 2009-09-29 2SJ380 IDR ­ VDS -30 Common source Common source Pulse test Tc = 25°C -4 (A , charge Qg (nC) 4 2009-09-29 2SJ380 rth ­ tw Normalized transient thermal impedance rth (t


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PDF 2SJ380 J380 transistor j380 2SJ380
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SJ380 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2- tt-M O SV) 2SJ380 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY , h a n g e w it h o u t n o tic e . 1998 10-30 1/5 - TOSHIBA 2SJ380 ELECTRICAL , —Year (Last Number of the Christian Era) 1998 10-30 2/5 - TOSHIBA 2SJ380 id - vos id , 2SJ380 Rd s (ON) - Te -3 0 os S H z: a¿ o os D O 05 W > -10 < OS a


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PDF 2SJ380 20kf2)
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2- tt-MOSV) 2SJ380 HIGH , Gate Drive Low Drain-Source ON Resistance 2SJ380 INDUSTRIAL APPLICATIONS U nit in mm 10 ± 0 .3 3.2 , o tic e . # # 1998 01-14 - 3.9 1/5 TOSHIBA 2SJ380 ELECTRICAL CHARACTERISTICS , the Christian Era) 1998 01-14 - 2/5 TOSHIBA 2SJ380 id - vds id - vd s , D R A IN C U R R E N T D R A IN C U R R E N T 1998 01-14 - 3/5 TOSHIBA 2SJ380


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PDF 2SJ380 --60V)
Jab zener

Abstract: No abstract text available
Text: 12 12 38 38 60 60 110 110 170 170 13.5 13.5 48 2SJ360 2S J3 77 *2 S J 3 7 8 2SJ349 2SJ334 2SJ380


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PDF T0-220 2SJ334 2SK2312 Packag55 2SK1379 Jab zener
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS (V) RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 , '99 -2- Toshiba Note Replacement 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 , B 2SK2508 B 2SJ464 B 2SJ380 B 2SK2607 A 2SK2603 B 2SK2603 B YTA640 A YTA640 A


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: IXTH BUK SSD, SF ST SI 2SK, 2SJ NDT Industry Part Number 2SJ334 2SJ380 2SJ402 2SJ412


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PDF
2sk3625

Abstract: 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917
Text: (0.01) P TPCS8104 (0.012) P TPCS8105 (0.0135) 2SJ380 (0.21) N[TPC8015-H (0.008)] NTPC8003 (0.007 , 1.5 2SJ380 -100 -12 2SJ619 -100 -16 2SJ412 -100 -16 60 2SJ464 -100


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917
1999 - IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: 2SJ380 2SJ402 2SJ412 2SJ419 2SJ420 2SJ438 2SJ464 2SJ468 2SJ469 2SK2146 2SK2266 2SK2311 2SK2314 2SK2440


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PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
K2057

Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
Text: 150 2SJ380 (0.21)4 12 13 N[ N N P P TPC8015-H(0.008)]6 TPC8003(0.007)6 TPC8009-H , 2SJ508 2SJ509 2SJ380 2SJ412 2SJ464 RDS(ON) () VDSS (V) ID (A) PD (W) - 30 -2


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PDF BCE0017A 2SK2610) 2SK794) K2057 toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: (0.01) P TPCS8104 (0.012) P TPCS8105 (0.0135) 2SJ380 (0.21) N[TPC8015-H (0.008)] NTPC8003 (0.007 , 1.5 2SJ380 -100 -12 2SJ619 -100 -16 2SJ412 -100 -16 60 2SJ464 -100


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
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