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2SJ377(TE16R1,NQ) Toshiba America Electronic Components MOSFET P-CHAN 60V 5A 2-7J1B
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2SJ377(Q) Toshiba America Electronic Components Chip1Stop 2,850 $5.70 $4.24
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2SJ377 datasheet (21)

Part Manufacturer Description Type PDF
2SJ377 Toshiba TRANS MOSFET P-CH 60V 5A 3(2-7J1B) Original PDF
2SJ377 Toshiba Power MOSFETs Cross Reference Guide Original PDF
2SJ377 Toshiba Original PDF
2SJ377 Toshiba P-Channel MOSFET Original PDF
2SJ377 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SJ377 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ377 Toshiba Field Effect Transistor Silicon P Channel MOS Type (Power (L, 2)-pi-MOS V) Scan PDF
2SJ377 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications Scan PDF
2SJ377(2-7B1B) Toshiba 2SJ377 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
2SJ377(2-7B2B) Toshiba 2SJ377 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, SC-64, 3 PIN, FET General Purpose Power Original PDF
2SJ377(2-7J1B) Toshiba 2SJ377 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
2SJ377(Q) Toshiba 2SJ377 - MOSFET P-CHAN 60V 5A 2-7J1B Original PDF
2SJ377Q Toshiba 2SJ377Q - Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) PW-Mold Original PDF
2SJ377TE16L Toshiba 2SJ377 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Original PDF
2SJ377(TE16L1.N) Toshiba TRANS MOSFET P-CH 60V 5A 3(2-7J1B) Original PDF
2SJ377(TE16L1N) Toshiba TRANS MOSFET P-CH 60V 5A 3(2-7J1B) Original PDF
2SJ377(TE16L1,NQ) Toshiba 2SJ377 - Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) PW-Mold T/R Original PDF
2SJ377TE16R Toshiba 2SJ377 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Original PDF
2SJ377(TE16R) Toshiba TRANS MOSFET P-CH 60V 5A 3(2-7J1B) Original PDF
2SJ377(TE16R1N) Toshiba TRANS MOSFET P-CH 60V 5A 3(2-7J1B) Original PDF

2SJ377 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - J377

Abstract: 2sj377
Text: 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L -MOSV) 2 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z , . Handle with care. Weight: 0.36 g (typ.) 1 2006-11-16 2SJ377 Electrical Characteristics (Ta , 2006-11-16 2SJ377 3 2006-11-16 2SJ377 4 2006-11-16 2SJ377 5 2006-11-16 2SJ377 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to change without


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PDF 2SJ377 J377 2sj377
J377

Abstract: 2SJ377
Text: 2SJ377 2 PMOS (L -MOS) 2SJ377 DC-DC : mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 4V 0.6 MAX. VDSS -60 VDGR -60 V VGSS ±20 V ( 1 , -25 VTch = 25 ()L = 14.84 mHRG = 25 IAR = -5 A 3: MOS 1 2010-02-05 2SJ377 , (EU 2002/95/EC) 2 2010-02-05 2SJ377 3 2010-02-05 2SJ377 4 2010-02-05 2SJ377 5 2010-02-05 2SJ377 · · · · ""


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PDF 2SJ377 2002/95/EC) J377 2SJ377
J377

Abstract: 2SJ377
Text: 2SJ377 2 PMOS (L -MOS) 2SJ377 DC-DC : mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 4V 5.5 ± 0.2 : RDS (ON) = 0.16 () : |Yfs| = 4.0 S () : Vth = -0.8-2.0V (VDS = -10V, ID , . JEDEC JEITA 3 2-7J1B : 0.35 g () MOS 1 2009-07-13 2SJ377 , (EU 2002/95/EC) 2 2009-07-13 2SJ377 3 2009-07-13 2SJ377 4 2009-07-13 2SJ377 5 2009-07-13 2SJ377 · · · · ""


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PDF 2SJ377 SC-64 2002/95/EC) J377 2SJ377
Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA 2SJ377 SILICON P CHANNEL MOS TYPE TECHNICAL DATA (L2 - 7 T - M O S V ) ( 2SJ377 ) H IG H S P E E D , H IG H C U R R E N T S W IT C H , 2SJ377 - 1 _ 1 9 9 6 - 0 9 - 0 2 _ ^ TO SH IB A CORPORATION SEMICONDUCTOR TOSHIBA 2SJ377 TECHNICAL DATA ( 2SJ377 ) E L E C T R IC A L C H A R A C T E R IS T , , VGs = 0 V d lo R / dt = 50A / ¡us 2SJ377 - 2 1996-09-02 TO S H IB A CORPORATION FORWARD


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PDF 2SJ377 2SJ377) 0-16fi --60V) 20kfi) 2SJ377
2002 - 2SJ377

Abstract: No abstract text available
Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain-source , 2002-06-27 2SJ377 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , Marking 2 2002-06-27 2SJ377 3 2002-06-27 2SJ377 4 2002-06-27 2SJ377 5 2002-06-27 2SJ377 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 2SJ377 2SJ377
2002 - 2SJ377

Abstract: No abstract text available
Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON , 2002-06-27 2SJ377 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , Marking 2 2002-06-27 2SJ377 3 2002-06-27 2SJ377 4 2002-06-27 2SJ377 5 2002-06-27 2SJ377 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 2SJ377 2SJ377
2007 - J377

Abstract: silicon power J377 2SJ377 transistor j377
Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source , electrostatic-sensitive device. Handle with care. 1 2006-11-16 2SJ377 Electrical Characteristics (Ta = 25 , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ377 3 2006-11-16 2SJ377 4 2006-11-16 2SJ377 5 2006-11-16 2SJ377 RESTRICTIONS ON PRODUCT


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PDF 2SJ377 J377 silicon power J377 2SJ377 transistor j377
2SJ377

Abstract: No abstract text available
Text: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , 2SJ377 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , ) 2000-03-22 2/5 TOSHIBA 2SJ377 ID - vds id - vds COMMON SOUCE Tc = 25°C — 6 -4 -3.5 , -0.1 -0.3 -1 -3 -10 DRAIN CURRENT ID (A) -30 2000-03-22 3/5 TOSHIBA 2SJ377 RDS(ON) - Te °o M w , -20 -12 -4 16 24 TOTAL GATE CHARGE 32 (nC) 2000-03-22 4/5 TOSHIBA 2SJ377 SAFE OPERATING AREA


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PDF 2SJ377 2SJ377
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2 -tt-M O SV ) 2SJ377 2SJ377 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE , to change w ith o u t notice. 1998 01-14 1/5 - TOSHIBA 2SJ377 ELECTRICAL , 2SJ377 id - vds id - vds id - vos vds - vos GATE-SOURCE VOLTAGE Vq s (V , Ijy (A) 1998 01-14 3/5 - TOSHIBA 2SJ377 Rd s (o n ) - Te IDR - VDS CAPACITANCE


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PDF 2SJ377 --60V)
2010 - 2SJ377

Abstract: J377
Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 4 , is an electrostatic-sensitive device. Handle with care. 1 2010-02-05 2SJ377 Electrical , hazardous substances in electrical and electronic equipment. 2 2010-02-05 2SJ377 3 2010-02-05 2SJ377 4 2010-02-05 2SJ377 5 2010-02-05 2SJ377 RESTRICTIONS ON PRODUCT


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PDF 2SJ377 2SJ377 J377
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SJ377 Field Effect Transistor Silicon P Channel MOS Type (L2-k-MOS V) High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications Features U nit in m m · 4V Gate Drive · Low Drain-Source ON Resistance ~ Rds(ON) = 0.16 i i (Typ.) · High Forward Transfer Admittance - Yfs' = 4.OS (Typ.) · Low Leakage Current - logs = "1 OOjiA (Max.) @ · Enhancement-Mode =: -60V , . TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 183 2SJ377 D iscrete S em ico n du cto rs


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PDF 2SJ377
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2 tt-M O SV ) - 2SJ377 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U STRIA L APPLICATIO NS U n it , contained herein is subject to change w ith o u t notice. 1998 10-30 - 1/5 TOSHIBA 2SJ377 , Alphabet A) I —Y ear (L ast Number of the Christian Era) - TOSHIBA 2SJ377 id - , Vq s (V) id (A) 1998 10-30 - 3/5 TOSHIBA 2SJ377 Rd s (ON) - Te IDR - Vd S


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PDF 2SJ377 20kf2)
2009 - J377

Abstract: 2SJ377
Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 4 , an electrostatic-sensitive device. Handle with care. 1 2009-07-13 2SJ377 Electrical , hazardous substances in electrical and electronic equipment. 2 2009-07-13 2SJ377 3 2009-07-13 2SJ377 4 2009-07-13 2SJ377 5 2009-07-13 2SJ377 RESTRICTIONS ON PRODUCT


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PDF 2SJ377 J377 2SJ377
2004 - J377

Abstract: j377 datasheet 2SJ377 silicon power J377 transistor j377
Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON , . JEDEC JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2004-07-06 2SJ377 , )-free finish. 2 2004-07-06 2SJ377 3 2004-07-06 2SJ377 4 2004-07-06 2SJ377 5 2004-07-06 2SJ377 RESTRICTIONS ON PRODUCT USE 030619EAA · The information


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PDF 2SJ377 J377 j377 datasheet 2SJ377 silicon power J377 transistor j377
2005 - J377

Abstract: 2SJ377 j377 datasheet silicon power J377 transistor j377
Text: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.16 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low , JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2005-03-04 2SJ377 Electrical , 2SJ377 3 2005-03-04 2SJ377 4 2005-03-04 2SJ377 5 2005-03-04 2SJ377


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PDF 2SJ377 J377 2SJ377 j377 datasheet silicon power J377 transistor j377
Not Available

Abstract: No abstract text available
Text: MOTOR DRIVE APPLICATIONS 77 2SJ377 INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive Low , IB A 2SJ377 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Drain , TO SH IB A 2SJ377 id - vds id - vds DRAIN-SOURCE VOLTAGE V¡jg (V , ) 1998 01-14 3/5 - TO SH IB A 2SJ377 R d s (ON) - Te id r - vds CASE TEMPERATURE , ) 1998 01-14 4/5 - TO SH IB A 2SJ377 rth - tw ¡5 PULSE WIDTH tw (s) -3 0 SAFE


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PDF 2SJ377 --100/iA --60V) --10V, ----25V,
2SK2056

Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Text: 2SJ126 2SJ304 2SK568 2SJ183 2SJ377 2SK572 2SJ224 2SJ312 2SK573 2SK1641 2SJ238 2SJ360 2SK578 2SK2882 2SJ239 2SJ377 2SK643 2SK2601 2SJ240 2SJ349 2SK644 2SK2601 2SJ241 2SJ401 2SK672 2SK2232 2SJ315 2SJ377 2SK673 2SK2232


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PDF 2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231 2SK2742 2SK2077 2SK2746 2SK1487 2SK2056 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
2SJ377

Abstract: relay IR
Text: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J 3 7 7 , without notice. 1998-10-30 1/5 TOSHIBA 2SJ377 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC , from Alphabet A) — Year (Last Number of the Christian Era) 1998-10-30 2/5 TOSHIBA 2SJ377 id - VDS id , -0.3 -1 -3 -10 drain current id (a) -30 1998-10-30 3/5 TOSHIBA 2SJ377 RDS(ON) - Te * £ °o M w o g , 40 TOTAL GATE CHARGE Q„ (nC) 1998-10-30 4/5 TOSHIBA 2SJ377 SAFE OPERATING AREA < n EAS - Tch -0.1


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PDF 2SJ377 relay IR
2SJ377

Abstract: No abstract text available
Text: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , 2SJ377 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , (Starting from Alphabet A) — Year (Last Number of the Christian Era) 1998-01-14 2/5 TOSHIBA 2SJ377 , -0.1 -0.3 -1 -3 -10 DRAIN CURRENT Id (A) -30 1998-01-14 3/5 TOSHIBA 2SJ377 RDS(ON) - Te ¿H Çr , -20 -16 g > -12 0 8 16 24 32 40 TOTAL GATE CHARGE Q„ (nC) -4 1998-01-14 4/5 TOSHIBA 2SJ377


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PDF 2SJ377 2SJ377
TLSV1060

Abstract: TC7MBL3244AFK US20 2sj668
Text: 12% 2 2SJ377 /378 3 U-MOS III , Max A VDSS V ID VGS=4V VGS=10V 0.25 0.17 -60 -5 0.25 0.17 -60 -5 2SJ377 2SJ378 3


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PDF 250mA 03-3457-3405FAX. TLxx1060 TLRV1060 TLRMV1060 TLSV1060 TLOV1060 TLxx1100 TLYV1060 TLSV1060 TC7MBL3244AFK US20 2sj668
K2312

Abstract: j378 K2314
Text: -10 -10 -10 -10 10 10 10 10 10 10 10 10 10 10 10 10 10 Id R d s (ON) (A) 2SJ360 " 2SJ377 ·2SJ378


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PDF O-220 T0-220 O-220FL/SM O-220AB 2SJ360 2SJ377 K2312 j378 K2314
2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Text: . 179 2SJ349. 181 2SJ377.


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PDF 1SV237 1SV239. 1SV257 TA4100F. YTS2222. YTS2222A. YTS2907. YTS2907A. YTS3904. YTS3906. 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
2SK2056

Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Text: L -MOSV 2SJ312 2SJ360 2SJ377 2SJ349 2SJ401 A A A A A -60 0.25 -5 TPS L 2 - -MOSIV Non-Promotion 2 2SJ360 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 , L2-MOSV L2-MOSV -MOSV -MOSV -MOSV -MOSV -MOSV 2 L -MOSV L2-MOSV -MOSV -MOSV 2SJ377 A , 2SJ304 2SJ377 Factory Himeji Kaga Himeji Himeji Himeji Toscom Toscom Himeji Toscom


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PDF 2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS (V) RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509 2SJ511 2SJ512 2SJ513 2SJ514 2SJ515 2SJ516 2SJ525 2SJ537 2SK1119 2SK1120 2SK1359 , '99 -2- Toshiba Note Replacement 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
rubycon "zl series"

Abstract: Rubycon zl series 2SJ377 fz 79 470 NJM2309 EC30LA02 NJM2309M NJM2309V CDRH104R 2SA1244
Text: ,200pF L FET Q1 SBD CIN, COUT : TDK SLF12565T : Toshiba 2SJ377 : Toshiba 2SC2655 : Nihon


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PDF NJM2309 NJM2309 6V32V 5kHz500kHz NJM2309M NJM2309E NJM2309V 10k100kCT 220pF22 rubycon "zl series" Rubycon zl series 2SJ377 fz 79 470 EC30LA02 NJM2309M NJM2309V CDRH104R 2SA1244
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