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Toshiba America Electronic Components
2SJ360(TE12L,F) Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) PW-Mini T/R (Alt: 2SJ360(TE12L,F)) 2SJ360(TE12L,F) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (2) 2SJ360(TE12L,F) Tape and Reel 42,500 12 Weeks, 2 Days 1,000 - - - €0.3825 €0.26393 More Info
2SJ360(TE12L,F) Tape and Reel 0 16 Weeks 1,000 - - - - - More Info
Panasonic Electronic Components
ERG2SJ360A Res Metal Oxide 36 Ohm 5% 2W ±350ppm/°C Conformal AXL Thru-Hole - Ammo Pack (Alt: ERG-2SJ360A) ERG2SJ360A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet ERG2SJ360A Ammo Pack 0 10 Weeks 6,000 - - - - $0.04478 More Info
Panasonic Electronic Components
ERG2SJ360V Res Metal Oxide 36 Ohm 5% 2W ±350ppm/°C Conformal AXL Thru-Hole Ammo Pack - Ammo Pack (Alt: ERG-2SJ360V) ERG2SJ360V ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet ERG2SJ360V Ammo Pack 0 10 Weeks 12,000 - - - - - More Info
Panasonic Electronic Components
ERG2SJ360E Res Metal Oxide 36 Ohm 5% 2W ±350ppm/°C Conformal RDL Thru-Hole Ammo Pack - Ammo Pack (Alt: ERG-2SJ360E) ERG2SJ360E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet ERG2SJ360E Ammo Pack 0 10 Weeks 6,000 - - - - $0.05217 More Info
Toshiba America Electronic Components
2SJ360(T2LVALEO,ZF Trans MOSFET P-CH 60V 1A 3-Pin SC-62 (Alt: 2SJ360(T2LVALEO,ZF) 2SJ360(T2LVALEO,ZF ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet 2SJ360(T2LVALEO,ZF 0 1,000 - - - - - More Info
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Panasonic Electronic Components
ERG-2SJ360A NRFND 07/16/2019, NO REPLACEMENT ERG-2SJ360A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 ERG-2SJ360A Bulk 0 3,000 $0.241 $0.141 $0.077 $0.059 $0.049 More Info
Panasonic Electronic Components
ERG-2SJ360 NRFND 07/16/2019, NO REPLACEMENT ERG-2SJ360 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 ERG-2SJ360 Bulk 0 1,000 $0.225 $0.132 $0.072 $0.055 $0.046 More Info
Onlinecomponents.com ERG-2SJ360 4,900 $0.137 $0.137 $0.137 $0.069 $0.055 More Info
Master Electronics ERG-2SJ360 4,900 15 Weeks $0.137 $0.137 $0.137 $0.069 $0.0391 More Info
Panasonic Electronic Components
ERG-2SJ360E NRFND 07/16/2019, NO REPLACEMENT ERG-2SJ360E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 ERG-2SJ360E Bulk 0 1,000 $0.28 $0.164 $0.09 $0.068 $0.057 More Info
Panasonic Electronic Components
ERG-2SJ360V NRFND 07/16/2019, NO REPLACEMENT ERG-2SJ360V ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 ERG-2SJ360V Bulk 0 1,000 $0.233 $0.137 $0.075 $0.057 $0.048 More Info
Toshiba America Electronic Components
2SJ360-TE12L 2SJ360-TE12L ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics 2SJ360-TE12L 850 8 - $0.675 $0.4388 $0.216 $0.216 More Info
Toshiba America Electronic Components
2SJ360(F) Trans MOSFET P-CH Si 60V 1A 4-Pin(3+Tab) PW-Mini 2SJ360(F) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip1Stop 2SJ360(F) Bulk 1,314 10 - $0.441 $0.365 $0.326 $0.326 More Info

2SJ360 datasheet (13)

Part ECAD Model Manufacturer Description Type PDF
2SJ360 2SJ360 ECAD Model Kexin P-Channel MOSFET Original PDF
2SJ360 2SJ360 ECAD Model Toshiba TRANS MOSFET P-CH 60V 1A 3(2-5K1B) Original PDF
2SJ360 2SJ360 ECAD Model Toshiba Original PDF
2SJ360 2SJ360 ECAD Model Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SJ360 2SJ360 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ360 2SJ360 ECAD Model Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications Scan PDF
2SJ360 2SJ360 ECAD Model Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV) Scan PDF
2SJ360(F) 2SJ360(F) ECAD Model Toshiba 2SJ360 - MOSFET P-CH 60V 1A SC-62 Original PDF
2SJ360(TE12L) 2SJ360(TE12L) ECAD Model Toshiba 2SJ360 - MOSFET P-CH 60V 1A PW-MINI Original PDF
2SJ360TE12L 2SJ360TE12L ECAD Model Toshiba TRANS MOSFET P-CH 60V 1A 3(2-5K1B) T/R Original PDF
2SJ360(TE12L,F) 2SJ360(TE12L,F) ECAD Model Toshiba 2SJ360 - MOSFET P-CH 60V 1A SC-62 Original PDF
2SJ360TE12R 2SJ360TE12R ECAD Model Toshiba 2SJ360 - TRANSISTOR 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Original PDF
2SJ360(TE12R,F) 2SJ360(TE12R,F) ECAD Model Toshiba 2SJ360 - Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) PW-Mini T/R Original PDF

2SJ360 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2SJ360

Abstract: No abstract text available
Text: 2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ360 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low , two digits represent the part number.) 1 2002-08-09 2SJ360 Electrical Characteristics (Ta , -1 A, VGS = 0 V dIDR / dt = 50 A / µs - 50 - µC 2 2002-08-09 2SJ360 3 2002-08-09 2SJ360 4 2002-08-09 2SJ360 5 2002-08-09 2SJ360 RESTRICTIONS ON PRODUCT


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PDF 2SJ360 2SJ360
2004 - 2SJ360

Abstract: No abstract text available
Text: 2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ360 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low , . 8 A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-06 2SJ360 , 2004-07-06 2SJ360 3 2004-07-06 2SJ360 4 2004-07-06 2SJ360 5 2004-07-06 2SJ360 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is subject to


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PDF 2SJ360 2SJ360
2003 - 2SJ360

Abstract: CHA100
Text: 2SJ360 PMOS (L2-MOS) 2SJ360 DC-DC · : mm 4V · · · : |Yfs , : (//) ( / ) () () Rth (ch-a) 250 / W MOS 1 2009-09-29 2SJ360 () Z 8 4: No , 2SJ360 ID ­ VDS -1.0 ID (A) -6 -0.6 -3 -0.4 -0.2 -3.8 -10 -3.5 , (A) 2009-09-29 2SJ360 RDS (ON) ­ Ta IDR ­ VDS -3 (A) -1.5 1.6 -1.0 , 40 80 120 Ta 160 200 (°C) 4 2009-09-29 2SJ360 rth - tw 500


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PDF 2SJ360 -100A -10VID SC-62 2SJ360 CHA100
2002 - Not Available

Abstract: No abstract text available
Text: 2SJ360 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2 2SJ360 Chopper Regulator, DC-DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON resistance High , represent the part number.) 1 2002-08-09 2SJ360 Electrical Characteristics (Ta = 25 , 50 Max -1 -3 1.7 - - Unit A A V ns µC 2 2002-08-09 2SJ360 3 2002-08-09 2SJ360 4 2002-08-09 2SJ360 5 2002-08-09 2SJ360 RESTRICTIONS ON PRODUCT USE 000707EAA


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PDF 2SJ360
2007 - 2SJ360

Abstract: No abstract text available
Text: 2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ360 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low , device. Please handle with caution. 1 2006-11-15 2SJ360 Electrical Characteristics (Ta = 25 , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-15 2SJ360 3 2006-11-15 2SJ360 4 2006-11-15 2SJ360 5 2006-11-15 2SJ360 RESTRICTIONS ON PRODUCT


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PDF 2SJ360 2SJ360
2006 - Not Available

Abstract: No abstract text available
Text: 2SJ360 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2 2SJ360 Chopper Regulator, DC-DC Converter and Motor Drive Applications z 4-V gate drive z Low drain-source ON resistance z , an electrostatic-sensitive device. Please handle with caution. 1 2006-11-15 2SJ360 , )-free finish. 2 2006-11-15 2SJ360 3 2006-11-15 2SJ360 4 2006-11-15 2SJ360 5 2006-11-15 2SJ360 RESTRICTIONS ON PRODUCT USE · The information contained herein is


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PDF 2SJ360
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2 -?r-MOSV) 2SJ360 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER , to change w ith o u t notice. 1998 02-19 - 1/5 TOSHIBA 2SJ360 ELECTRICAL , €” fjC -3 1.7 50 50 1998 02-19 - 2/5 TOSHIBA 2SJ360 id - id vds - , ¡5 < H 55 Ä gg OO Hz ëa SQ §* Z § c 00 CO 1998 02-19 - 3/5 TOSHIBA 2SJ360


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PDF 2SJ360
2SJ360

Abstract: J360
Text: TOSHIBA 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J 3 60 , contained herein is subject to change without notice. 1998-02-19 1/5 TOSHIBA 2SJ360 ELECTRICAL , TOSHIBA 2SJ360 ID - vds id - vds COMMON SOURCE Ta = 25°C -10/ -4 L/ -8 : 4.5/r -3.5 , 0.5 0.3 -0.1 -0.3 -0.5 -1 -3 -5 DRAIN CURRENT ID (A) -10 1998-02-19 3/5 TOSHIBA 2SJ360 RDS(ON) - Ta , -80 -40 0 40 80 120 AMBIENT TEMPERATURE Ta (°C) 160 1998-02-19 4/5 TOSHIBA 2SJ360 SAFE OPERATING AREA


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PDF 2SJ360 -100M J360
2008 - 2SJ360

Abstract: No abstract text available
Text: 2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ360 High , 2SJ360 Marking Part No. (or abbreviation code) Z 8 A line indicates Lead (Pb)-Free Lot No , / dt = 50 A / s 45 nC 2 2008-06-25 2SJ360 ID ­ VDS -4 -10 -4.5 -5 , 2SJ360 RDS (ON) - Ta IDR - VDS -3 ID = -2 A Drain reverse current IDR (A) Drain-source ON , 2008-06-25 2SJ360 rth - tw 500 Transient thermal impedance rth (ch-a) 300 Single pulse


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PDF 2SJ360 2SJ360
Not Available

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2SJ360 HIGH SPEED, HIGH CURRENT SWITCHING , change w ithout notice. 1998 02-19 - 1/5 TO SHIBA 2SJ360 ELECTRICAL CHARACTERISTICS (Ta , dlo R / dt = 50 A / / J .S - - 1998 02-19 - 2/5 TO SHIBA 2SJ360 id - vos , 0 .5 -1 Iß -3 (A) -5 -1 0 D R A IN C U R R E N T 1998 02-19 - 3/5 TO SHIBA 2SJ360 , PD - Ta 1998 02-19 - 4/5 TO SHIBA 2SJ360 rth - tw P U L SE W ID T H tw


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PDF 2SJ360 2SJ36Q --60V)
2SJ360

Abstract: No abstract text available
Text: TOSHIBA 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , 1/5 TOSHIBA 2SJ360 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , — juC 2000-03-22 2/5 TOSHIBA 2SJ360 ID - vds id - vds -1.0 -O.i -0.6 -0.4 -0.2 COMMON , DRAIN CURRENT ID (A) -10 2000-03-22 3/5 TOSHIBA 2SJ360 RDS(ON) - Ta IDR - VDS 2.0 1.6 1.2 0.4 , -80 -40 0 40 80 120 AMBIENT TEMPERATURE Ta (°C) 160 2000-03-22 4/5 TOSHIBA 2SJ360 SAFE


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PDF 2SJ360 2SJ360
2009 - 2SJ360

Abstract: No abstract text available
Text: 2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ360 High , 2SJ360 Marking Part No. (or abbreviation code) Note 4 Z Note 4: A line to the right of a , A, VGS = 0 V dIDR / dt = 50 A / s 45 nC 2 2009-09-29 2SJ360 ID ­ VDS -4 , 2SJ360 RDS (ON) - Ta IDR - VDS -3 ID = -2 A Drain reverse current IDR (A) Drain-source ON , 2009-09-29 2SJ360 rth - tw 500 Transient thermal impedance rth (ch-a) 300 Single pulse


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PDF 2SJ360 2SJ360
Not Available

Abstract: No abstract text available
Text: 2SJ360 TOSHIBA Field Effect Transistor 2 Silicon P Channel MOS Type (L − −MOSV) 2SJ360 High Speed, High current Switching Applications Chopper Regulator, DC−DC Converter and Motor , . Please handle with caution. 1 2009-09-29 2SJ360 Marking Part No. (or abbreviation code , = 50 A / μs ⎯ 45 ⎯ nC 2 2009-09-29 2SJ360 ID – VDS −4 â , ˆ’3 −5 −10 Drain current ID (A) 3 2009-09-29 2SJ360 RDS (ON) − Ta IDR − VDS


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PDF 2SJ360
smd mosfet z8

Abstract: 2SJ360
Text: MOSFET SMD Type MOS Field Effect Transistors 2SJ360 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 (VGS=-4V,ID=-1.0A) 1 High forward transfer admittance :|Yfs|=0.9S(Typ.) A +0.1 0.53-0.1 Max.)(VDS=-60V) +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 Low leakage current :IDSS=-100 3 2 +0.1 0.48-0.1 +0.1 0.80-0.1 , 1 MOSFET SMD Type 2SJ360 Electrical Characteristics Ta = 25 Parameter Symbol


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PDF 2SJ360 OT-89 smd mosfet z8 2SJ360
K2312

Abstract: j378 K2314
Text: -10 -10 -10 -10 10 10 10 10 10 10 10 10 10 10 10 10 10 Id R d s (ON) (A) 2SJ360 "2SJ377 ·2SJ378 2SJ349 2SJ334 2SJ360 2SK2229 2SK2231 2SK2232 2SK 2311 2SK2233 2SK2266 ·2SK2312 ·2SK2173 '2SK 2313 '2SK


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PDF O-220 T0-220 O-220FL/SM O-220AB 2SJ360 2SJ377 K2312 j378 K2314
marking pd

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2- tt-M O SV) 2SJ360 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 2SJ360 CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 4.6 M A X. 1.6MAX 0.4 + 0.05 4V GATE DRIVE Low Drain-Source ON Resistance : Rd S(ON)~ 0.55f2 (Typ.) High Forward Transfer Admittance , andbo ok. 1996 12-01 - 1/2 T O SH IB A 2SJ360 ELECTRICAL CHARACTERISTICS (Ta = 25


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PDF 2SJ360 --100//A --60V) marking pd
2SJ360

Abstract: No abstract text available
Text: TOSHIBA 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J 3 6 0 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 4V GATE DRIVE Low Drain-Source on Resistance : rds(on) — 0-550 (Typ.) High Forward Transfer Admittance : |Yfs| = 0.9S(Typ.) Low Leakage Current : idss= -100/^A (Max.) (vds , TOSHIBA Semiconductor Reliability Handbook. 1996-12-01 1/2 TOSHIBA 2SJ360 ELECTRICAL CHARACTERISTICS


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PDF 2SJ360 600mm2 961001EAA2' 2SJ360
2SK2056

Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Text: 2SJ238 2SJ360 2SK578 2SK2882 2SJ239 2SJ377 2SK643 2SK2601 2SJ240 2SJ349


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PDF 2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231 2SK2742 2SK2077 2SK2746 2SK1487 2SK2056 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Jab zener

Abstract: No abstract text available
Text: 12 12 38 38 60 60 110 110 170 170 13.5 13.5 48 2SJ360 2S J3 77 *2 S J 3 7 8 2SJ349 2SJ334 2SJ380


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PDF T0-220 2SJ334 2SK2312 Packag55 2SK1379 Jab zener
2SK2056

Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Text: L -MOSV 2SJ312 2SJ360 2SJ377 2SJ349 2SJ401 A A A A A -60 0.25 -5 TPS L 2 - -MOSIV Non-Promotion 2 2SJ360 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412


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PDF 2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
2sk3625

Abstract: 2SK3566 equivalent 2SK3868 2sj618 NTPCA8008-H 2SK3878 2SK2611 2sk 2sj complementary mosfet MOSFET TOSHIBA 2SK2917 TPC8107
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up (ID = 0.5~20 A) 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 2SK2963 (0.7) 2SK2962 (0.7) 2SJ508 (1.9) 2SJ509 (1.9) 2SK3670 (1.7) 2SJ313 (5.0) 2SJ338 (5.0) 2SK2013 (5.0) 2SK2162 (5.0) ID (A) 2SJ360 (0.73) 2SJ507 (0.7) 1 2 2SK2964 (0.18) 2SJ511 , -2 1.5 2SJ525 -30 -5 1.3 2SJ537 -50 -5 2SJ360 -60 2SJ507 -60


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2sj618 NTPCA8008-H 2SK3878 2SK2611 2sk 2sj complementary mosfet MOSFET TOSHIBA 2SK2917 TPC8107
2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: VDSS(V) ID(A) 12 16 20 30 40 50 60 100 150 180 2SJ360 (0.73) 2SJ507 , ­10 2SJ360 ­60 ­1 0.5 PW-Mini 0.55 0.73 ­10 Part Number Package Typ


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 250 400 450 500 2SK2963 (0.7) 2SK2962 (0.7) 2SJ508 (1.9) 2SJ509 (1.9) 2SJ360 (0.73


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PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: 400 450 500 600 2SJ360 (0.73) 2SJ507 (0.7) 1 2SK2963 (0.7) 2SK2962 (0.7) 2SJ508 , 0.19 ­10 ­2.5 0.27 0.34 ­4 ­1.3 18 2SJ360 ­60 ­1 0.5 PW-Mini


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PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Text: 2SJ360 (0.73) 2SJ507(0.7) 1 2SK2963(0.7) 2SK2962(0.7) 2SJ508(1.9) 2SJ509(1.9) 2SK3670(1.7 , 30 ­5 1.3 TPS 2SJ537 ­ 50 ­5 0.9 2SJ360 ­ 60 ­1 2SJ507 ­ 60


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PDF O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
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