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2SJ349(F) Toshiba America Electronic Components Chip1Stop 580 $17.40 $14.10

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2SJ349 datasheet (8)

Part Manufacturer Description Type PDF
2SJ349 Toshiba P-Channel MOSFET Original PDF
2SJ349 Toshiba Original PDF
2SJ349 Toshiba TRANS MOSFET P-CH 60V 20A 3(2-10R1B) Original PDF
2SJ349 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SJ349 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ349 Toshiba Field Effect Transistor Silicon P Channel MOS Type (Power (L, 2)-pi-MOS V) Scan PDF
2SJ349 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
2SJ349(F,T) Toshiba 2SJ349 - MOSFET P-CH 60V 20A TO-3 Original PDF

2SJ349 Datasheets Context Search

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2003 - j349

Abstract: 2SJ349
Text: 2SJ349 2 PMOS (L -MOS) 2SJ349 DC-DC : mm 4V : RDS (ON) = 33m , : () VDD = -50VTch = 25 ()L = 1.44mHRG = 25IAR = -20A 3: MOS 1 2009-12-10 2SJ349 , ) 2003 1 27 (EU 2002/95/EC) 2 2009-12-10 2SJ349 3 2009-12-10 2SJ349 PD ­ Tc , ) 4 2009-12-10 2SJ349 -100 ID MAX. () 100 s -50 1 ms -30 10 ms ID , VDSS MAX. -10 -30 VDS -100 (V) 5 2009-12-10 2SJ349 · · ·


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PDF 2SJ349 -10VID SC-67 2-10R1B 2002/95/EC) j349 2SJ349
2004 - j349

Abstract: transistor j349 2SJ349
Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC , . 1 2004-07-06 2SJ349 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , lead (Pb)-free finish. 2 2004-07-06 2SJ349 3 2004-07-06 2SJ349 PD ­ Tc DRAIN , 160 Tc 200 (°C) 4 2004-07-06 2SJ349 SAFE OPERATING AREA -100 ID MAX. (PULSED , DRAIN-SOURCE VOLTAGE -30 VDS -100 (V) 5 2004-07-06 2SJ349 RESTRICTIONS ON PRODUCT USE


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PDF 2SJ349 j349 transistor j349 2SJ349
2003 - j349

Abstract: 2SJ349
Text: 2SJ349 2 PMOS (L -MOS) 2SJ349 DC-DC : mm 4V : RDS (ON) = 33m , : () VDD = -50VTch = 25 ()L = 1.44mHRG = 25IAR = -20A 3: MOS 1 2009-09-29 2SJ349 , ) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SJ349 3 2009-09-29 2SJ349 PD ­ Tc , ) 4 2009-09-29 2SJ349 -100 ID MAX. () 100 s -50 1 ms -30 10 ms ID , VDSS MAX. -10 -30 VDS -100 (V) 5 2009-09-29 2SJ349 · · ·


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PDF 2SJ349 -10VID SC-67 2-10R1B 2002/95/EC) j349 2SJ349
2002 - 2SJ349

Abstract: No abstract text available
Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Applications 4 V gate drive Low drain-source ON resistance High , caution. 1 2002-06-10 2SJ349 Electrical Characteristics (Tc = 25°C) Characteristics Gate , 75 83 Max -20 -80 1.7 - - Unit A A V ns µC Marking 2 2002-06-10 2SJ349 3 2002-06-10 2SJ349 4 2002-06-10 2SJ349 5 2002-06-10 2SJ349 RESTRICTIONS ON PRODUCT


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PDF 2SJ349 2SJ349
2SJ349

Abstract: No abstract text available
Text: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M OS TYPE (L2-tt-M O SV ) 2SJ349 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm DC-DC , contained herein is subject to change without notice. 1999 05-26 - 1/5 TOSHIBA 2SJ349 , ) 1999 05-26 - 2/5 TOSHIBA 2SJ349 id - vds id - vds DRAIN-SOURCE VOLTAGE , 05-26 - 3/5 TOSHIBA 2SJ349 R d s (o n ) - Te iDR - CAPACITANCE - Vd S vds Vth -


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PDF 2SJ349 33mfl 100/uA 2SJ349
2002 - 2SJ349

Abstract: No abstract text available
Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Applications l Unit: mm 4 V gate drive l Low drain-source ON resistance : RDS (ON) = 33 m (typ.) l High forward transfer admittance : |Yfs| = 20 , electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SJ349 Electrical , 2SJ349 3 2002-09-02 2SJ349 4 2002-09-02 2SJ349 5 2002-09-02 2SJ349


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PDF 2SJ349 2SJ349
2006 - j349

Abstract: transistor j349
Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC , 2006-11-16 2SJ349 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ349 3 2006-11-16 2SJ349 PD ­ Tc 50 DRAIN POWER DISSIPATION PD (W) 40 30 20 10 0 0 40 80 120 160 200 CASE TEMPERATURE Tc (°C) 4 2006-11-16 2SJ349 SAFE OPERATING AREA


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PDF 2SJ349 j349 transistor j349
2002 - 2SJ349

Abstract: No abstract text available
Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON , caution. 1 2002-09-02 2SJ349 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , Marking 2 2002-09-02 2SJ349 3 2002-09-02 2SJ349 4 2002-09-02 2SJ349 5 2002-09-02 2SJ349 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 2SJ349 2SJ349
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2SJ349 HIGH , urrent Enhancement-Mode 2SJ349 INDUSTRIAL APPLICATIONS U nit in mm r 0 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7 , subject to change w ithout notice. 1999 05-26 - 1/5 TO SHIBA 2SJ349 ELECTRICAL , SHIBA 2SJ349 ID - VDS id - vds DRAIN-SOURCE VOLTAGE Vd S (V) DRAIN-SOURCE , ) 1999 05-26 - 3/5 TO SHIBA 2SJ349 Rd s (o n ) - Te IDR - VDS DRAIN-SOURCE VOLTAGE


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PDF 2SJ349 --50V,
2007 - J349

Abstract: 2SJ349 transistor j349
Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC , is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 2SJ349 , 2006-11-16 2SJ349 3 2006-11-16 2SJ349 PD ­ Tc DRAIN POWER DISSIPATION PD (W) 50 40 , 2006-11-16 2SJ349 SAFE OPERATING AREA -100 ID MAX. (PULSED)* 100 s* -50 DRAIN CURRENT ID , 2006-11-16 2SJ349 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information contained herein is


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PDF 2SJ349 J349 2SJ349 transistor j349
N7C3

Abstract: No abstract text available
Text: TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2- tt-M OSV) 2SJ349 , APPLICATIONS 2SJ349 i rt /m INDUSTRIAL APPLICATIONS Unit in mm · · · 4V Gate Drive Low , 2SJ349 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Drain Cut-off , TO SH IB A 2SJ349 id - vos id - vos DRAIN-SOURCE VOLTAGE V ^S tV) DRAIN-SOURCE , Iß (A) 1998 01-14 3/5 - TO SH IB A 2SJ349 R d s (o n ) - Te IDR - VDS CASE


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PDF 2SJ349 --20S --100//A 20kfl) ----20A, N7C3
j349

Abstract: 2SJ349 transistor j349
Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC , is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SJ349 , electrical and electronic equipment. 2 2009-09-29 2SJ349 3 2009-09-29 2SJ349 PD ­ Tc , TEMPERATURE 160 Tc 200 (°C) 4 2009-09-29 2SJ349 SAFE OPERATING AREA -100 ID MAX , DRAIN-SOURCE VOLTAGE -30 VDS -100 (V) 5 2009-09-29 2SJ349 RESTRICTIONS ON PRODUCT USE ·


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PDF 2SJ349 j349 2SJ349 transistor j349
2009 - j349

Abstract: transistor j349 2SJ349
Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC , 2009-12-10 2SJ349 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , hazardous substances in electrical and electronic equipment. 2 2009-12-10 2SJ349 3 2009-12-10 2SJ349 PD ­ Tc DRAIN POWER DISSIPATION PD (W) 50 40 30 20 10 0 0 40 80 120 CASE TEMPERATURE 160 Tc 200 (°C) 4 2009-12-10 2SJ349 SAFE


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PDF 2SJ349 j349 transistor j349 2SJ349
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2- tt-MOSV) 2SJ349 HIGH , urrent Enhancement-Mode 2SJ349 INDUSTRIAL APPLICATIONS U nit in mm 1N JJ 10 ± 0 .3 3.2 ± 0 , notice. # # 1998 01-14 - 3.9 1/5 TOSHIBA 2SJ349 ELECTRICAL CHARACTERISTICS (Ta = , 2SJ349 id - vds id - vds < Q H 2 ¡ I D O DRAIN-SOURCE VOLTAGE VDS (V , 01-14 - 3/5 TOSHIBA 2SJ349 Rd s (o n ) - Te IDR - VDS DRAIN-SOURCE VOLTAGE Vd S


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PDF 2SJ349 --60V)
Diode FAJ 32

Abstract: 2SJ349
Text: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , contained herein is subject to change without notice. 1998-01-14 1/5 TOSHIBA 2SJ349 ELECTRICAL , Number of the Christian Era) 1998-01-14 2/5 TOSHIBA 2SJ349 id - vds -10 common source te = 25 , -30 -50 -100 drain current id (a) drain current id (a) 1998-01-14 3/5 TOSHIBA 2SJ349 H O  , 1998-01-14 4/5 TOSHIBA 2SJ349 rth - tv < Q 0.001 10// 100 jU lm 10m 100m pulse width tw (s) safe


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PDF 2SJ349 Diode FAJ 32 2SJ349
2SJ349

Abstract: No abstract text available
Text: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , 2SJ349 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , ) 2000-02-01 2/5 TOSHIBA 2SJ349 id - vds -10 COMMON SOURCE Tc = 25°C h / > 3.5 ! If , ID (A) DRAIN CURRENT ID (A) 2000-02-01 3/5 TOSHIBA 2SJ349 RDS(ON) - Te COMMON SOURCE , 2000-02-01 4/5 TOSHIBA 2SJ349 rth - tv < Q -100 -50 -30 -10 -5 -3 -1 -0.5 Duty = t/T Rth(ch-c) =


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PDF 2SJ349 2SJ349
Not Available

Abstract: No abstract text available
Text: TO SH IBA 2SJ349 Field Effect Transistor Silicon P Channel M O S Type (L 2-ji-MOS V) High Speed, High Current Switching, D C -D C Converter Chopper Regulator and Motor Drive Applications Features · 4V Gate Drive · Low Drain-Source ON Resistance - R DS(ON) = 33mQ (Typ.) · High Forward Transfer Adm ittance - 'Yfs' = 20S (Typ.) · Low Leakage Current - Iqss " "1 OOjiA (Max.) @ V qq = -60V · , . TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 1 8 1 2SJ349 Discrete Semiconductors Electrical


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PDF 2SJ349
2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Text: . 179 2SJ349. 181 2SJ377


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PDF 1SV237 1SV239. 1SV257 TA4100F. YTS2222. YTS2222A. YTS2907. YTS2907A. YTS3904. YTS3906. 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
K2312

Abstract: j378 K2314
Text: 2SJ349 2SJ334 2SJ360 2SK2229 2SK2231 2SK2232 2SK 2311 2SK2233 2SK2266 ·2SK2312 ·2SK2173 '2SK 2313 '2SK


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PDF O-220 T0-220 O-220FL/SM O-220AB 2SJ360 2SJ377 K2312 j378 K2314
Jab zener

Abstract: No abstract text available
Text: 12 12 38 38 60 60 110 110 170 170 13.5 13.5 48 2SJ360 2S J3 77 *2 S J 3 7 8 2SJ349 2SJ334 2SJ380


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PDF T0-220 2SJ334 2SK2312 Packag55 2SK1379 Jab zener
2SK2056

Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Text: 2SJ238 2SJ360 2SK578 2SK2882 2SJ239 2SJ377 2SK643 2SK2601 2SJ240 2SJ349


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PDF 2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231 2SK2742 2SK2077 2SK2746 2SK1487 2SK2056 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
2SK2056

Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Text: POWER MOLD L - -MOSIV 2 Non-Promotion 2 A A 2 2 2 2SJ334 2SJ338 2SJ349 -60 , L -MOSV 2SJ312 2SJ360 2SJ377 2SJ349 2SJ401 A A A A A -60 0.25 -5 TPS L


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PDF 2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: 2SK2399 B B B B B B B B B B B B B B 2SK2399 2SK2314 2SK2314 2SJ349 2SJ401 2SJ401


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
2sk3625

Abstract: 2SK3566 equivalent 2SK3868 2sj618 NTPCA8008-H 2SK3878 2SK2611 2sk 2sj complementary mosfet MOSFET TOSHIBA 2SK2917 TPC8107
Text: ) NTPCA8006-H (0.067) 2SK2614 (0.046) 13 2SJ349 (0.045) 2SJ401 (0.045) 2SK2782 (0.055) 2SK2391 , 1.3 TPS 2SJ438 -60 -5 25 TO-220 (NIS) 2SJ349 -60 -20 35 TO-220 (NIS


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2sj618 NTPCA8008-H 2SK3878 2SK2611 2sk 2sj complementary mosfet MOSFET TOSHIBA 2SK2917 TPC8107
2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: TPCM8001-H(0.0095) 2SK2614(0.046) 20 2SK2391(0.085) 2SJ349 (0.045) 2SJ401(0.045) 2SK2782(0.055 , 0.16 0.19 ­10 ­2.5 0.24 0.28 ­4 ­2.5 22 2SJ349 ­60 ­20 45 TO


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
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