The Datasheet Archive

SF Impression Pixel

Search Stock

Renesas Electronics Corporation
2SJ317NYTR - Bulk (Alt: 2SJ317NYTR) 2SJ317NYTR ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet 2SJ317NYTR Bulk 0 1 Weeks 582 - - - $0.61693 $0.5375 More Info
Rochester Electronics 2SJ317NYTR 4,000 1 $0.69 $0.69 $0.62 $0.56 $0.56 More Info
Renesas Electronics Corporation
2SJ317NYTL-E - Bulk (Alt: 2SJ317NYTL-E) 2SJ317NYTL-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet 2SJ317NYTL-E Bulk 0 1 Weeks 807 - - - $0.44476 $0.3875 More Info
Rochester Electronics 2SJ317NYTL-E 5,000 1 $0.51 $0.51 $0.45 $0.41 $0.41 More Info
Bristol Electronics (2) 2SJ317NYTL-E 490 5 - $1.125 $0.4219 $0.36 $0.36 More Info
2SJ317NYTL-E 1,000 5 - $1.125 $0.4219 $0.315 $0.315 More Info
Renesas Electronics Corporation
2SJ317NYTR-E Trans MOSFET P-CH 12V 2A 4-Pin(3+Tab) UPAK T/R - Bulk (Alt: 2SJ317NYTR-E) 2SJ317NYTR-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet 2SJ317NYTR-E Bulk 0 1 Weeks 1,087 - - - - $0.3049 More Info
Rochester Electronics 2SJ317NYTR-E 4,000 1 $0.37 $0.37 $0.33 $0.3 $0.3 More Info
Toshiba America Electronic Components
2SJ317NY 2SJ317NY ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics 2SJ317NY 20,000 - - - - - More Info
ComS.I.T. 2SJ317NY 5,000 - - - - - More Info

2SJ317 datasheet (12)

Part ECAD Model Manufacturer Description Type PDF
2SJ317 2SJ317 ECAD Model Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
2SJ317 2SJ317 ECAD Model Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
2SJ317 2SJ317 ECAD Model Hitachi Semiconductor Mosfet Guide Original PDF
2SJ317 2SJ317 ECAD Model Renesas Technology Silicon P Channel MOS FET Original PDF
2SJ317 2SJ317 ECAD Model Renesas Technology Silicon P-Channel MOS FET Original PDF
2SJ317 2SJ317 ECAD Model Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SJ317 2SJ317 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SJ317 2SJ317 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SJ317 2SJ317 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SJ317 2SJ317 ECAD Model Others FET Data Book Scan PDF
2SJ317NYTL-E 2SJ317NYTL-E ECAD Model Renesas Technology Silicon P Channel MOS FET Original PDF
2SJ317NYTR-E 2SJ317NYTR-E ECAD Model Renesas Technology Silicon P Channel MOS FET Original PDF

2SJ317 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - Hitachi DSA002713

Abstract: No abstract text available
Text: 2SJ317 Silicon P-Channel MOS FET November 1996 Application High speed power switching Low , . Drain 3. Source 4. Drain S 3 G 2SJ317 Absolute Maximum Ratings (Ta = 25°C) Item Drain to , 1. Pulse test 2 2SJ317 Maximun Power Dissipation Curve Channel Power Dissipation Pch (W) (on , Current I D (A) ­5 3 2SJ317 Dynamic Input Characteristics ­25 Drain to Source Voltage V DS (V , ) 4 2SJ317 Typical Forward Transfer Characteristics ­5 Ta = ­25°C I D (A) ­4 25°C ­3 75


Original
PDF 2SJ317 Hitachi DSA002713
2000 - 2SJ317

Abstract: Hitachi 2SJ DSA003638
Text: 2SJ317 Silicon P-Channel MOS FET ADE-208-1191 (Z) 1st. Edition Mar. 2001 Application High , . Outline UPAK 3 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SJ317 Absolute , Note: 2 1. Pulse test 2SJ317 Maximun Safe Operation Area Maximun Power Dissipation Curve , ­4 ­5 V GS (V) 3 2SJ317 Drain to Source on State Resistance vs. Drain Current 10 20 , VGS = ­4 V 0 25 50 75 Case Temperature Tc (°C) 100 2SJ317 Reverse Recovery Time vs


Original
PDF 2SJ317 ADE-208-1191 2SJ317 Hitachi 2SJ DSA003638
2000 - 2SJ317

Abstract: Hitachi 2SJ
Text: products contained therein. 2SJ317 Silicon P-Channel MOS FET ADE-208-1191 (Z) 1st. Edition Mar , 2SJ317 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source , t off - 2860 - ns RL = 51 Note: 2 1. Pulse test 2SJ317 Maximun Safe , test ­1 ­2 ­3 Gate to Source Voltage ­4 ­5 V GS (V) 3 2SJ317 Drain to Source on State , (°C) 100 2SJ317 Reverse Recovery Time vs. Reverse Drain Current Switching Time vs. Drain


Original
PDF
1999 - 2SJ317

Abstract: No abstract text available
Text: 2SJ317 Silicon P Channel MOSFET Application UPAK High speed power switching Low voltage , * Marking is "NY". 2SJ317 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min , - * Pulse test 2SJ317 Maximun Safe Operation Area Maximun Power Dissipation Curve ­10 , ­4 ­5 V GS (V) 2SJ317 Drain to Source on State Resistance vs. Drain Current 20 10 , VGS = ­4 V 0 25 50 75 Case Temperature Tc (°C) 100 2SJ317 Reverse Recovery Time vs


Original
PDF 2SJ317 2SJ317
varicap diodes

Abstract: BIPOLAR TRANSISTOR gsm module with microcontroller p channel mosfet hitachi SAW Filter dual gate mosfet in vhf amplifier Transistors mosfet p channel Mosfet transistor hitachi vhf fet lna Low frequency power transistor
Text: Transistor Power Management Switches 2SJ244 2SJ246L/S 2SJ279L/S 2SJ317 Silicon P Channel MOSFET Silicon , Silicon NPN Bipolar Transistor Power Management Switches 2SJ244 2SJ246L/S 2SJ279L/S 2SJ317 Silicon P , Transistor Silicon NPN Bipolar Transistor Power Management Switches 2SJ244 2SJ246L/S 2SJ279L/S 2SJ317 , 2SJ279L/S 2SJ317 2SJ361 Silicon P Channel MOSFET Silicon P Channel MOSFET Silicon P Channel MOSFET , 2SJ279L/S 2SJ317 2SJ361 Silicon P Channel MOSFET Silicon P Channel MOSFET Silicon P Channel MOSFET


OCR Scan
PDF PF0032 PF0040 PF0042 PF0045A PF0065 PF0065A HWCA602 HWCB602 HWCA606 HWCB606 varicap diodes BIPOLAR TRANSISTOR gsm module with microcontroller p channel mosfet hitachi SAW Filter dual gate mosfet in vhf amplifier Transistors mosfet p channel Mosfet transistor hitachi vhf fet lna Low frequency power transistor
1998 - 2sj317

Abstract: Hitachi 2SJ Hitachi DSA002779
Text: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features · Very low on-resistance · High speed switching · Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline 2SJ317 Absolute Maximum Ratings (Ta = 25°C) Item , gate voltage drain current IDSS 2 2SJ317 3 2SJ317 4 2SJ317 5 2SJ317 6 2SJ317 When using this document, keep the following in mind: 1. This document may, wholly or partially


Original
PDF 2SJ317 2sj317 Hitachi 2SJ Hitachi DSA002779
1999 - 2SJ317

Abstract: Hitachi 2SJ Hitachi DSA00395
Text: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation , 3. Source 4. Drain G S 2SJ317 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , : 2 1. Pulse test 2SJ317 Maximun Safe Operation Area Maximun Power Dissipation Curve ­10 , ­4 ­5 V GS (V) 3 2SJ317 Drain to Source on State Resistance vs. Drain Current 10 20 , VGS = ­4 V 0 25 50 75 Case Temperature Tc (°C) 100 2SJ317 Reverse Recovery Time vs


Original
PDF 2SJ317 2SJ317 Hitachi 2SJ Hitachi DSA00395
Not Available

Abstract: No abstract text available
Text: 2SJ317 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power , . Outline UPAK OD 1. Gate 2. Drain 3. Source 4. Drain ÓS 2SJ317 Absolute Maximum Ratings (Ta , lD= -0 .2 A *1, Vin = — V, 4 2860 ns RL = 51 f ì 1. Pulse test HITACHI 2SJ317 HITACHI 3 2SJ317 D ynam ic Input C haracteristics G ate Charge Qg (nc) M axim un S afe , Drain to Source Voltage 4 HITACHI V ds (V) 2SJ317 Typical Forward T ransfer C


OCR Scan
PDF 2SJ317
Not Available

Abstract: No abstract text available
Text: 2SJ317 Silicon P-Channel MOS FET HITACHI Application High speed power switching Low voltage , 2SJ317 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain , . Pulse test HITACHI 355 2SJ317 Maximun Power Dissipation Curve Maximun Safe Operation Area , -A -5 V q s (V) HITACHI 356 2SJ317 Forward Transfer Admittance vs. Drain Current CS , 50 75 Case Temperature Tc (°C) 100 HITACHI 357 2SJ317 Reverse Recovery Time vs. Reverse


OCR Scan
PDF 2SJ317 5x20x0
Not Available

Abstract: No abstract text available
Text: 2SJ317-Silicon P Channel MOSFET (OIV-L) Application High speed power switching Low voltage operation Features · Very low on-resistance · High speed switching · Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Table 1 Absolute M axim um Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode , Hitachi 323 « 2SJ317 Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown


OCR Scan
PDF 2SJ317----Silicon 2SJ317
2005 - Not Available

Abstract: No abstract text available
Text: Name 2SJ317NYTL-E 2SJ317NYTR-E Quantity 1000 pcs 1000 pcs Shipping Container Taping Taping , developed or manufactured by or for Renesas Electronics. 2SJ317 Silicon P Channel MOS FET REJ03G0857 , page 1 of 6 2SJ317 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , 2SJ317 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating â , RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) 2SJ317 –0.5 Pulse Test â


Original
PDF
2005 - 2SJ317

Abstract: 2SJ317NYTL-E 2SJ317NYTR-E 2SJ317NYTR foward reverse motor for home
Text: Name 2SJ317NYTL-E 2SJ317NYTR-E Quantity 1000 pcs 1000 pcs Shipping Container Taping Taping , 2SJ317 Silicon P Channel MOS FET REJ03G0857-0200 (Previous: ADE-208-1191) Rev.2.00 Sep 07 , of Renesas Technology Corp. Rev.2.00 Sep 07, 2005 page 1 of 6 2SJ317 Absolute Maximum , Test Conditions ID = ­1 mA, VGS = 0 Note 3 Note 3 2SJ317 Main Characteristics Maximum , ) 2SJ317 ­0.5 Pulse Test ­0.4 ID = ­1 A ­0.3 ­0.2 ­0.5 A ­0.1 A ­0.1 ­0.2 A 0 0


Original
PDF 2SJ317 REJ03G0857-0200 ADE-208-1191) PLZZ0004CA-A 2SJ317 2SJ317NYTL-E 2SJ317NYTR-E 2SJ317NYTR foward reverse motor for home
2sj177

Abstract: 2SJ299 PF0040 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 TO220FM Hitachi PF0030
Text: toff Ciss (V) (V) (A) (W) typ. max. typ. max. (S) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0) 10V<0) Pc h UPAK 2SJ317 -12 -2 0.4 , ) UPAK 2SJ317 -12 -2 0.4 * TO- 2SJ298 -5 * 0.1 2 1 26FM 2SJ300 -20 -10 * 0.08 DPAX 2SJ299


OCR Scan
PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sj177 2SJ299 PF0040 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 TO220FM Hitachi PF0030
2005 - 2SJ317NYTR-E

Abstract: 2SJ317 2SJ317NYTL-E
Text: Name 2SJ317NYTL-E 2SJ317NYTR-E Quantity 1000 pcs 1000 pcs Shipping Container Taping Taping , . 2SJ317 Silicon P Channel MOS FET REJ03G0857-0200 (Previous: ADE-208-1191) Rev.2.00 Sep 07, 2005 , Technology Corp. Rev.2.00 Sep 07, 2005 page 1 of 6 2SJ317 Absolute Maximum Ratings (Ta = 25 , Test Conditions ID = ­1 mA, VGS = 0 Note 3 Note 3 2SJ317 Main Characteristics Maximum , ) 2SJ317 ­0.5 Pulse Test ­0.4 ID = ­1 A ­0.3 ­0.2 ­0.5 A ­0.1 A ­0.1 ­0.2 A 0 0


Original
PDF
PF0040

Abstract: pf0030 hitachi 2sk mosfet 2sk1299 2sk mosfet rf power 2SJ299 2sj217 2SJ295 2SK1919 Hitachi PF0030
Text: toff Ciss (V) (V) (A) (W) typ. max. typ. max. (S) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0) 10V<0) Pc h UPAK 2SJ317 -12 -2 0.4 , D-IVL Series Item Packag« Type Rating RDS(on) max Vdss(V) ld(A) 4V 2SJ317 -12 -2


OCR Scan
PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 PF0040 pf0030 hitachi 2sk mosfet 2sk1299 2sk mosfet rf power 2SJ299 2sj217 2SJ295 2SK1919 Hitachi PF0030
2SK1778

Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Text: ) 10V<0) Pc h UPAK 2SJ317 -12 -2 0.4 * T0- 2SJ298 -5 * 0.12 126FM 2SJ300 -20 -10 * 0.08 , « Type Rating RDS(on) max Vdss(V) ld(A) 4V 2SJ317 -12 -2 0.4 * TO- 2SJ298 -5


OCR Scan
PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042
2SJ292

Abstract: 2SK1950 2sk mosfet 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SK1919 2SJ299
Text: toff Ciss (V) (V) (A) (W) typ. max. typ. max. (S) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , ) UPAK 2SJ317 -12 -2 0.4 * TO- 2SJ298 -5 * 0.1 2 1 26FM 2SJ300 -20 -10 * 0.08 DPAX 2SJ299


OCR Scan
PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2SJ292 2SK1950 2sk mosfet 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SK1919 2SJ299
2SK1778

Abstract: 2SJ236 2SK1776 2SK1094 2SK1093 2SJ237 2sj177 2SJ182 2SJ176 2SJ175
Text: ) 10V<0) Pc h UPAK 2SJ317 -12 -2 0.4 * T0- 2SJ298 -5 * 0.12 126FM 2SJ300 -20 -10 * 0.08 , « Type Rating RDS(on) max Vdss(V) ld(A) 4V 2SJ317 -12 -2 0.4 * TO- 2SJ298 -5


OCR Scan
PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2SK1776 2SK1094 2SK1093 2SJ237 2sj177 2SJ182 2SJ176 2SJ175
25K1772

Abstract: Hitachi PF0030 2sk1299 PF0040 2SJ192 2sk1205 2SJ299 PF0042 PF0030 KWSA103
Text: ) 10V<0) Pc h UPAK 2SJ317 -12 -2 0.4 * T0- 2SJ298 -5 * 0.12 126FM 2SJ300 -20 -10 * 0.08 , ) max Vdss(V) ld(A) 4V 2SJ317 -12 -2 0.4 * TO- 2SJ298 -5 * 0.1 2 1 26FM


OCR Scan
PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 25K1772 Hitachi PF0030 2sk1299 2SJ192 2sk1205 2SJ299 PF0042
2sk1299

Abstract: 2sk1205 2SJ298 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SJ299
Text: toff Ciss (V) (V) (A) (W) typ. max. typ. max. (S) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , D-IVL Series Item Packag« Type Rating RDS(on) max Vdss(V) ld(A) 4V 2SJ317 -12 -2


OCR Scan
PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sk1299 2sk1205 2SJ298 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SJ299
2sj217

Abstract: pf0030 hitachi 2SJ220 2SJ214 PF0042 PF0030 KWSA103 PF0040 2SK1919 hitachi S Mosfet pf0042
Text: ) 10V<0) Pc h UPAK 2SJ317 -12 -2 0.4 * T0- 2SJ298 -5 * 0.12 126FM 2SJ300 -20 -10 * 0.08 , ) max Vdss(V) ld(A) 4V 2SJ317 -12 -2 0.4 * TO- 2SJ298 -5 * 0.1 2 1 26FM


OCR Scan
PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sj217 pf0030 hitachi 2SJ220 2SJ214 PF0042 2SK1919 hitachi S Mosfet pf0042
2SK30

Abstract: 2sK30 fet 2SK34 2SK19TM FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
Text: PSW MOS r e -20 DSS ±20 S -10 D 12 ±10« ±16 -0. lm -16 -1 -2. 5 -10 -1« 6 9 -10 -5 2SJ317 si , =-10V 363 SDG 2SJ300 0.7 -2.2 -0. 5 ton=590ns, toff=2350nstyp lD=-0. ZA. VGS=0 295 GDS 2SJ317 3


OCR Scan
PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 10DGS, 2SK41NP 2SK25 2SK30ATM 2SK30 2SK30 2sK30 fet 2SK34 2SK19TM FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
2sk1299

Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
Text: ) 10V<0) Pc h UPAK 2SJ317 -12 -2 0.4 * T0- 2SJ298 -5 * 0.12 126FM 2SJ300 -20 -10 * 0.08 , « Type Rating RDS(on) max Vdss(V) ld(A) 4V 2SJ317 -12 -2 0.4 * TO- 2SJ298 -5


OCR Scan
PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sk1299 PF0042 2SJ295 2SJ299 2SK1919 Hitachi Scans-001
2SJ177

Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Text: ).351 2SJ317.


OCR Scan
PDF 2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
2SK1778

Abstract: 2sj177 2SJ236 pf0030 hitachi 2SK1093 2SJ237 2SJ182 2SJ176 pf0042 2SK1919
Text: ) 10V<0) Pc h UPAK 2SJ317 -12 -2 0.4 * T0- 2SJ298 -5 * 0.12 126FM 2SJ300 -20 -10 * 0.08 , RDS(on) max Vdss(V) ld(A) 4V 2SJ317 -12 -2 0.4 * TO- 2SJ298 -5 * 0.1 2 1


OCR Scan
PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2sj177 2SJ236 pf0030 hitachi 2SK1093 2SJ237 2SJ182 2SJ176 pf0042 2SK1919
Supplyframe Tracking Pixel