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2SJ297(L)(S) datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
2SJ297(L)(S) 2SJ297(L)(S) ECAD Model Others FET Data Book Scan PDF

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Not Available

Abstract: No abstract text available
Text: 2SJ297 ( L ), 2SJ297 ( S ) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed , 1. G ate 2. Drain os 3. Source 4. Drain 2SJ297 ( L ), 2SJ297 ( S ) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Gate to source voltage ^G S S Unit -6 0 Drain to source , 2 5 °C , Rg> 50 £2 2 HITACHI 2SJ297 ( L ), 2SJ297 ( S ) Electrical Characteristics (Ta = 25 , Typ Max Unit Test conditions ^ (B R )D S S -6 0 — — V lD= - 1 0 mA, VG


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PDF 2SJ297 2SJ291
1998 - 2SJ297

Abstract: Hitachi 2SJ Hitachi DSA001651
Text: 2SJ297 ( L ), 2SJ297 ( S ) Silicon P-Channel MOS FET November 1996 Application High speed power , Avalanche ratings Outline LDPAK 4 4 1 2 1 2 3 3 D G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ297 ( L ), 2SJ297 ( S ) Absolute Maximum Ratings (Ta = 25°C) Item Symbol , , duty cycle 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg 50 2 2SJ297 ( L ), 2SJ297 ( S , characteristic curves of 2SJ291 3 2SJ297 ( L ), 2SJ297 ( S ) When using this document, keep the following in


Original
PDF 2SJ297 Hitachi 2SJ Hitachi DSA001651
2SJ297

Abstract: No abstract text available
Text: 2SJ297 ( L ), 2SJ297 ( S ) Silicon P-Channel MOS FET HITACHI Application High speed power switching , LDPAK oD OS 2. Drain 3. Source 4. Drain 1. Gate 351 2SJ297 ( L ), 2SJ297 ( S ) Absolute , Pch*2 Tch Tstg °c il HITACHI 352 2SJ297 ( L ), 2SJ297ÇS) Electrical Characteristics (Ta = , Coss Crss fd(on) 10 - - - - - - - - - - - lD = -1 0 A, V G S = -1 0 V, R L , V(BRXSSS Igss loss ^ G S (o(f) R oS (mi) -6 0 ±20 - - -1.0 - - - - - - - 0.05 0.07 16


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PDF 2SJ297 2SJ291
2SJ297

Abstract: 2SJ291
Text: 2SJ297 L , 2SJ297 S Silicon P-Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 · · · · Low on­resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source · Suitable for Switching regulator, DC ­ DC , 2SJ297 L , 2SJ297 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ , * -­ Forward transfer admittance |yfs| 10 16 - S ID = ­10 A VDS = ­10 V


Original
PDF 2SJ297 2SJ291 2SJ291
2SJ297

Abstract: No abstract text available
Text: 2SJ297 L , 2SJ297 S Silicon P - C h a n n e l M O S F E T Application High speed power , < 1 % * Value at Tc = 25 °C * Value at Tch = 25 °C, Rg> 50 Cl 1 2SJ297 Í L j 2 S J 2 9 7 ( S , ) 'dr I R a t in g s U n it Drain to source voltage Gate to source voltage Drain current Drain , t i o n s Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak , V Iq = ±100 |iA, V pg = 0 'g s s 'd s s VGS(off) RDS(on) - - -1 .0 - - - 0.05


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PDF 2SJ297 2SJ291
2SJ177

Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Text: ).348 2SJ297 ( L ).351 2SJ297 ( S , . 149 2SJ13()( L , . 191 2SJ181 ( L ). 195 2SJ18I( S


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PDF 2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
2SJ239

Abstract: 2SJ238 2sJ241 2SJ234 2SJ232 2SJ231 2SJ230 2SJ295 2SJ292 lm812
Text: 2SJ297 ( L )( S ) Hi HS PSW. DDC MOS P E -60 DSS ±20 s -20 D 60 ±10« ±16 -. 25m -50 -1.25 -2. 25 -10 -lm , =-10V 294 GDS 2SJ297 ( L )( S ) 840 280 0 -10 0. 12 -10 -3 ton=90ns. toff=190nstyp !D=-3A, VGS=-10V 363 SDG , 2SJ234Í L )( S ) Hi HS PSW, DDC MOS P E -30 DSS ±20 s -2.5 D 10 ±10« ±16 -0. lm -25 -1 -2 -10 -lm 1 1.8 , . DDC MOS P E -60 DSS ±20 s -5 D 20 ±10« ±16 -0.1» -50 -1 -2 -10 -Il 2.2 3.7 -10 -3 2SJ246Í L )( S , 5 2SJ279( L )( S ) Hi HS PSW. DDC MOS P E -60 DSS ±20 s -5 D 20 ±10« ±16 -0. lm -50 -1 -2. 25 -10


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PDF Ta-25 2SJ230 2SJ231 2SJ232 2SJZ33 2SJ234Ã 155ns, 500nstyp 2SJ291 200ns, 2SJ239 2SJ238 2sJ241 2SJ234 2SJ232 2SJ295 2SJ292 lm812
PF0040

Abstract: pf0030 hitachi 2sk mosfet 2sk1299 2sk mosfet rf power 2SJ299 2sj217 2SJ295 2SK1919 Hitachi PF0030
Text: 0.06 0.043 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L , toff Ciss (V) (V) (A) (W) typ. max. typ. max. ( S ) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , « PP0140 PF0I30 Oaaa V I.5W.6V 1.2}ia twitch typ ICC SMDpk| PPOISO Power MOSFETs D-IV L Series , 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V , (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power management Switch circuit


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 PF0040 pf0030 hitachi 2sk mosfet 2sk1299 2sk mosfet rf power 2SJ299 2sj217 2SJ295 2SK1919 Hitachi PF0030
25K1772

Abstract: Hitachi PF0030 2sk1299 PF0040 2SJ192 2sk1205 2SJ299 PF0042 PF0030 KWSA103
Text: | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , 2SJ294 -20 0.095 0.065 2SJ29S -30 0.06 0.043 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 , Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246


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PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 25K1772 Hitachi PF0030 2sk1299 2SJ192 2sk1205 2SJ299 PF0042
2sj177

Abstract: 2sk1778 2sk1301 2SK97-2 2SK580 2SK579 2SK1153 2SK1152 2SK1151 2sj175
Text: 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 , VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power management , - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2 Pch 2SJ290 -15 0.1 2 0.095 TO , -20 0.095 0.065 2SJ295 -30 0.06 0.043 2SJ296 -15 0.1 2 0.095 LDPAK 2SJ297 -20 0.095 0.065 , LDPAK 2SK1918 25 0.06 0.04 2SK1919 40 0.028 0.022 2.5v drive 2.5v drive D-III L Series Item


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sj177 2sk1778 2sk1301 2SK97-2 2sj175
2sj177

Abstract: 2SJ299 PF0040 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 TO220FM Hitachi PF0030
Text: 0.06 0.043 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L , toff Ciss (V) (V) (A) (W) typ. max. typ. max. ( S ) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , « PP0140 PF0I30 Oaaa V I.5W.6V 1.2}ia twitch typ ICC SMDpk| PPOISO Power MOSFETs D-IV L Series , ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power , - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2 Pch 2SJ290 -15 0.1 2 0.095 TO


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sj177 2SJ299 PF0040 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 TO220FM Hitachi PF0030
2SK1778

Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Text: | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , 2SJ294 -20 0.095 0.065 2SJ29S -30 0.06 0.043 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , Battery Operating Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 , * 0.1 2 1 26FM 2SJ300 -20 -10 * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK


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PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042
2sk1299

Abstract: 2sk1205 2SJ298 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SJ299
Text: toff Ciss (V) (V) (A) (W) typ. max. typ. max. ( S ) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V , (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power management Switch circuit , 0.4 * TO- 2SJ298 -5 * 0.1 2 1 26FM 2SJ300 -20 -10 * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK , 2SJ295 -30 0.06 0.043 2SJ296 -15 0.1 2 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sk1299 2sk1205 2SJ298 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SJ299
2SK1778

Abstract: 2SJ236 2SK1776 2SK1094 2SK1093 2SJ237 2sj177 2SJ182 2SJ176 2SJ175
Text: | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , 2SJ294 -20 0.095 0.065 2SJ29S -30 0.06 0.043 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , Battery Operating Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 , * 0.1 2 1 26FM 2SJ300 -20 -10 * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK


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PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2SK1776 2SK1094 2SK1093 2SJ237 2sj177 2SJ182 2SJ176 2SJ175
2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent .model 2SK216 DRUM DRIVER 2sj44
Text: ^os(on) ( ^ , T yp - - 0.7 - Max - - 0.83 - C is s (pF) 45 60 180 150 D rive L o s s Pd (m W )*3 , * ? v B± 7 B a tte ry H AT1020R 1 4- H A T 2 0 2 5 R rL rr T y p ic a l c irc u it s h o w , Inverter (Air Conditioner) Inverter 32 L ineup Absolute Maximum Ratings VD S S Device Power , (5.33) A 2SK 1761 (0.23.1 2SKÏ752 (023) T 2SK2426(0.23.i k 2 S K H 0 O (0 .5 > :fJ {2 S K ll5 l , ]|2Skl637j(1 8) ^ 2SK1618 (3.8) [2 S k i6 2 4 j( i.8 ) ' G 2SK2059Î38)' T 2 S K 2 Î4 4 (3 .8 l T


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PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent .model 2SK216 DRUM DRIVER 2sj44
2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK1317 equivalent 2SJ182 equivalent 2SK215 equivalent 2SJ40 2sj332 2sk1058 equivalent
Text: , 120 V, 150 V, 200 V, 250 V 5. The chart above does not show L ' and s j indicating long and , ^O S (on| L Ciss Drive Loss Pd (mW)*3 7 Max (PF) 0.028 750 T0220CFM 2SK2736 2SK2737 , (1.4) Q 2&J486 (P.5) O 9 S K 2 M 0 JOM l * 2SJ363 (0.6) * HATlOMfliOia * HftT2D16fif0 , (0.0Ô) ApSJl74){Ô.065) P S J 1 7 ^(0 0 6 5 ) 2SJ219(0.09) PSJ22Ô| (6.005) A . 2SJ29Ô {6.075) + { 2SJ297 , °C S > lD x R0 S (o n ), l D= 1/2 lDmax 2 . Test conditions: VD 3. 2.5-V driving 47 Table 2-7


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PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK1317 equivalent 2SJ182 equivalent 2SK215 equivalent 2SJ40 2sj332 2sk1058 equivalent
2sj217

Abstract: pf0030 hitachi 2SJ220 2SJ214 PF0042 PF0030 KWSA103 PF0040 2SK1919 hitachi S Mosfet pf0042
Text: | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , 2SJ294 -20 0.095 0.065 2SJ29S -30 0.06 0.043 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 , Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246


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PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sj217 pf0030 hitachi 2SJ220 2SJ214 PF0042 2SK1919 hitachi S Mosfet pf0042
2SK1778

Abstract: 2sj177 2SJ236 pf0030 hitachi 2SK1093 2SJ237 2SJ182 2SJ176 pf0042 2SK1919
Text: | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , 2SJ294 -20 0.095 0.065 2SJ29S -30 0.06 0.043 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 , Operating Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24


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PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2sj177 2SJ236 pf0030 hitachi 2SK1093 2SJ237 2SJ182 2SJ176 pf0042 2SK1919
2sj2 high voltage p channel mosfet

Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1763 2SJ175 2SK1204 Hitachi Scans-001 2sk513 o
Text: 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L Series , • 4VRDS( S )" ton toir Note« Class (V) (V) (A) (W) tJP- max. typ. max. (M) (ns) 4AK17 10 0.04 0.065 0.033 0.045 17 110 470 2SK972 (A) 4AK15 60 S 0.075 , V I.5W.6V 1.2}ia twitch typ ICC SMDpk| PPOISO Power MOSFETs D-IV L Series Item Package , 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V 2SK440 2SK741 2SK1335 2SK741


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PDF
2SK1778

Abstract: 2SK109 2SJ236 2SJ176 2SJ182 2SJ175 2SJ237 2SK1093 2SK1094 2SK1776
Text: 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 , VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power management , - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2 Pch 2SJ290 -15 0.1 2 0.095 TO , -20 0.095 0.065 2SJ295 -30 0.06 0.043 2SJ296 -15 0.1 2 0.095 LDPAK 2SJ297 -20 0.095 0.065 , LDPAK 2SK1918 25 0.06 0.04 2SK1919 40 0.028 0.022 2.5v drive 2.5v drive D-III L Series Item


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PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SJ176 2SJ182 2SJ175 2SJ237 2SK1093 2SK1094 2SK1776
25K1772

Abstract: 2SJ300 2SK1763 2SJ279 2SJ278 2SK1645 2SJ245 2SJ244 TO220FM 2sk mosfet
Text: HITACHI 5.7 Power Conversion (3) Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 , * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2 Pch 2SJ290 , 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 DPAK 2SK1949 5 0.2 0.1 5 2SK1950 3 0.3 0.25 TO , 0.028 0.022 LDPAK 2SK1918 25 0.06 0.04 2SK1919 40 0.028 0.022 2.5v drive 2.5v drive D-III L


OCR Scan
PDF 2SJ244 2SJ246 2SJ245 2SJ317 2SJ298 2SJ300 2SJ299 2SJ278 2SJ279 2SJ290 25K1772 2SK1763 2SJ279 2SJ278 2SK1645 2SJ245 2SJ244 TO220FM 2sk mosfet
2sk1299

Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
Text: | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , 2SJ294 -20 0.095 0.065 2SJ29S -30 0.06 0.043 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , Battery Operating Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 , * 0.1 2 1 26FM 2SJ300 -20 -10 * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK


OCR Scan
PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sk1299 PF0042 2SJ295 2SJ299 2SK1919 Hitachi Scans-001
2SJ235

Abstract: 2SK1878 2SJ299 2sk1299 2SK580 2SK579 2SK1153 2SK1152 2SK1151 2sk mosfet
Text: 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 , VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power management , - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2 Pch 2SJ290 -15 0.1 2 0.095 TO , -20 0.095 0.065 2SJ295 -30 0.06 0.043 2SJ296 -15 0.1 2 0.095 LDPAK 2SJ297 -20 0.095 0.065 , LDPAK 2SK1918 25 0.06 0.04 2SK1919 40 0.028 0.022 2.5v drive 2.5v drive D-III L Series Item


OCR Scan
PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2SK1878 2SJ299 2sk1299 2sk mosfet
2SK1778

Abstract: 2sk1299 4AK22 2sj177 4AM12 transistor 2sk1304 2SK975 2SK973 2SK970 transistor 2sk
Text: • 4VRDS( S )" ton toir Note« Class (V) (V) (A) (W) tJP- max. typ. max. (M) (ns) 4AK17 10 0.04 0.065 0.033 0.045 17 110 470 2SK972 (A) 4AK15 60 S 0.075 , 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V 2SK440 2SK741 2SK1335 2SK741 , . max. ( S )* (M) (ns) OpF) 2SJ172 -10 40 0.18 0.25 0.13 0.18 6.5 73 275 900 2SJ173 -60 -15 50


OCR Scan
PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AK22 2sj177 4AM12 transistor 2sk1304 2SK975 2SK973 2SK970 transistor 2sk
2SJ292

Abstract: 2SK1950 2sk mosfet 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SK1919 2SJ299
Text: toff Ciss (V) (V) (A) (W) typ. max. typ. max. ( S ) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power management , - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2 Pch 2SJ290 -15 0.1 2 0.095 TO , -20 0.095 0.065 2SJ295 -30 0.06 0.043 2SJ296 -15 0.1 2 0.095 LDPAK 2SJ297 -20 0.095 0.065 , LDPAK 2SK1918 25 0.06 0.04 2SK1919 40 0.028 0.022 2.5v drive 2.5v drive D-III L Series Item


OCR Scan
PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2SJ292 2SK1950 2sk mosfet 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SK1919 2SJ299
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