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2SJ280(L)(S) datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
2SJ280(L)(S) 2SJ280(L)(S) ECAD Model Others FET Data Book Scan PDF

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1998 - 2SJ280

Abstract: Hitachi DSA001651
Text: 2SJ280 ( L ), 2SJ280 ( S ) Silicon P-Channel MOS FET November 1996 Application High speed power , . Source 4. Drain 2SJ280 ( L ), 2SJ280 ( S ) Absolute Maximum Ratings (Ta = 25°C) Item Symbol , , duty cycle 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg 50 2 2SJ280 ( L ), 2SJ280 ( S , 3 2SJ280 ( L ), 2SJ280 ( S ) Power vs. Temperature Derating Channel Dissipation Pch (W) 75 50 , (V) 2SJ280 ( L ), 2SJ280 ( S ) Drain-Source Saturation Voltage vs. Gate-Source Voltage Drain to


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PDF 2SJ280 Hitachi DSA001651
A0LA

Abstract: No abstract text available
Text: 2SJ280 ( L ), 2SJ280 ( S ) Silicon P-Channel MOS FET HITACHI November 1996 Application High speed , k J 4 2 3 1. G ate 2. Drain os 3. Source 4. Drain 2SJ280 ( L ), 2SJ280 ( S , 2 5 °C , Rg> 50 £2 2 HITACHI 2SJ280 ( L ), 2SJ280 ( S ) Electrical Characteristics (Ta = 25 , 0 A, VG = 0, S diF = 50 A/^is /dt Note 1. Pulse test HITACHI 3 2SJ280 ( L ), 2SJ280 ( S , HITACHI V gs (V) 2SJ280 ( L ), 2SJ280 ( S ) D rain-S ource Saturation Voltage vs. G ate-S o urce Voltage


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PDF 2SJ280 A0LA
100Reverse

Abstract: 2SJ280
Text: 2SJ280 ( L ), 2SJ280 ( S ) Silicon P-Channel MOS FET HITACHI Application High speed power switching , 309 2SJ280 ( L ), 2SJ280 ( S ) Absolute Maximum Ratings ( T a = 2 5 ° C ) Item Drain to source voltage , Voltage Vos (V) -1 -2 -3 -4 -5 Gate to Source Voltage Vgs (V) HITACHI 312 2SJ280 ( L ), 2SJ280 ( S , (A) HITACHI 314 2SJ280 ( L ), 2SJ280 ( S ) Reverse Drain Current vs. Source to Drain Voltage c c , °C VQ S S 1 *3 ' ap E *3 ^A R Pch*2 Tch Tstg HITACHI 310 2 S J 2 8 0 ( L ),2 S J 2 8 0


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PDF 2SJ280 100Reverse
c2nj

Abstract: No abstract text available
Text: 2SJ280 L , 2SJ280 S Silicon P C h a n n e l M O S F E T Application High speed power switching , * Pulse Test 2 2SJ280 L . 2SJ280 S Maximum Safe Operation Area -5 0 0 -3 0 0 < -100 -3 0 O 0 , 2SJ280 L . 2SJ280 S Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain-Source , Gate Charge Qg (nc) Drain Current I d (A) 5 2SJ280 L . 2SJ280 S Reverse Drain , ap 2 - V ps" V d ss-V d d 6 2SJ280 L . 2SJ280 S Picture Not Available 7


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PDF 2SJ280 c2nj
DR C 5V

Abstract: 2SJ280 2SJ290
Text: 2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching , 2SJ280 L , 2SJ280 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ , - * Pulse Test 2SJ280 L , 2SJ280 S Maximum Safe Operation Area Power vs. Temperature , ) 0 ­1 ­2 ­3 ­4 ­5 Gate to Source Voltage VGS (V) 2SJ280 L , 2SJ280 S Drain-Source , 2SJ280 L , 2SJ280 S Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain-Source


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PDF 2SJ280 DR C 5V 2SJ290
2SJ177

Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Text: ). 300 5 P-Channel (2SJ Series) Index 2SJ280 ( L ).309 2SJ280 ( S , . 149 2SJ13()( L , . 191 2SJ181 ( L ). 195 2SJ18I( S


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PDF 2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
2sj177

Abstract: 2SJ299 PF0040 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 TO220FM Hitachi PF0030
Text: 0.06 0.043 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L , toff Ciss (V) (V) (A) (W) typ. max. typ. max. ( S ) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , LDPAK 2SJ280 ±20 -30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK.1918 60 25 50 0.043 0.06 0.03 , « PP0140 PF0I30 Oaaa V I.5W.6V 1.2}ia twitch typ ICC SMDpk| PPOISO Power MOSFETs D-IV L Series , ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sj177 2SJ299 PF0040 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 TO220FM Hitachi PF0030
PF0040

Abstract: pf0030 hitachi 2sk mosfet 2sk1299 2sk mosfet rf power 2SJ299 2sj217 2SJ295 2SK1919 Hitachi PF0030
Text: 0.06 0.043 2SJ296 -IS 0.12 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 D-III L , toff Ciss (V) (V) (A) (W) typ. max. typ. max. ( S ) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , LDPAK 2SJ280 ±20 -30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK.1918 60 25 50 0.043 0.06 0.03 , « PP0140 PF0I30 Oaaa V I.5W.6V 1.2}ia twitch typ ICC SMDpk| PPOISO Power MOSFETs D-IV L Series , 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 PF0040 pf0030 hitachi 2sk mosfet 2sk1299 2sk mosfet rf power 2SJ299 2sj217 2SJ295 2SK1919 Hitachi PF0030
2sj177

Abstract: 2sk1778 2sk1301 2SK97-2 2SK580 2SK579 2SK1153 2SK1152 2SK1151 2sj175
Text: 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 , VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power management , - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2 Pch 2SJ290 -15 0.1 2 0.095 TO , 2SJ280 -30 0.06 0.043 DPAK 2SK1949 5 0.2 0.1 5 2SK1950 3 0.3 0.25 TO- 2SK1910 25 0.06 0.04 , LDPAK 2SK1918 25 0.06 0.04 2SK1919 40 0.028 0.022 2.5v drive 2.5v drive D-III L Series Item


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sj177 2sk1778 2sk1301 2SK97-2 2sj175
2sk1299

Abstract: 2sk1205 2SJ298 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SJ299
Text: toff Ciss (V) (V) (A) (W) typ. max. typ. max. ( S ) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , LDPAK 2SJ280 ±20 -30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK.1918 60 25 50 0.043 0.06 0.03 , 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V , (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power management Switch circuit , 0.4 * TO- 2SJ298 -5 * 0.1 2 1 26FM 2SJ300 -20 -10 * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sk1299 2sk1205 2SJ298 2SJ292 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SJ299
25K1772

Abstract: Hitachi PF0030 2sk1299 PF0040 2SJ192 2sk1205 2SJ299 PF0042 PF0030 KWSA103
Text: 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 , Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 , 2SJ300 -20 -10 * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2


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PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 25K1772 Hitachi PF0030 2sk1299 2SJ192 2sk1205 2SJ299 PF0042
2SJ292

Abstract: 2SK1950 2sk mosfet 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SK1919 2SJ299
Text: toff Ciss (V) (V) (A) (W) typ. max. typ. max. ( S ) (ns) (ns) (pF) UPAK 2SJ317 -12 ±7 -2 1 0.32 0.4 , LDPAK 2SJ280 ±20 -30 75 0.045 0.06 0.033 0.043 25 200 740 3300 2SK.1918 60 25 50 0.043 0.06 0.03 , VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power management , - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2 Pch 2SJ290 -15 0.1 2 0.095 TO , 2SJ280 -30 0.06 0.043 DPAK 2SK1949 5 0.2 0.1 5 2SK1950 3 0.3 0.25 TO- 2SK1910 25 0.06 0.04


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PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2SJ292 2SK1950 2sk mosfet 2SJ291 2SJ290 2SJ279 2SJ278 transistor 2sk 2SK1919 2SJ299
Not Available

Abstract: No abstract text available
Text: 2SJ323 Silicon P C h a n n e l M O S F E T Application High speed pow er switching Features , / ^ s See characteristic curve o f 2SJ280 . 2 2SJ323 -5 0 0 -3 0 0 Maximum Safe Operation , t i o n s Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak , ±200 |iA, V qq = 0 !g s s 'd s s VGS(off) RDS(on) - - -1 .0 - - - 0.033 no -2 5 0 -2 , -1 5 A VGS = -1 0 V * lD = -1 5 A Vg S = - 4 V * lD = -1 5 A V DS = -1 0 V * 0.045 0.06 ci


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PDF 2SJ323 2SJ280.
2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent .model 2SK216 DRUM DRIVER 2sj44
Text: -220CFM 2SK1636 (0.22) · 2SK1671 (0.075) ' 2SK1948 (0.047) 2SJ280 (0.03) 2SK1623 (0.065) 2SJ479 (0.025) V 2 S J , ^os(on) ( ^ , T yp - - 0.7 - Max - - 0.83 - C is s (pF) 45 60 180 150 D rive L o s s Pd (m W )*3 , * ? v B± 7 B a tte ry H AT1020R 1 4- H A T 2 0 2 5 R rL rr T y p ic a l c irc u it s h o w , Inverter (Air Conditioner) Inverter 32 L ineup Absolute Maximum Ratings VD S S Device Power , Airconditioner Power windows Power mirror Power seats, etc. 2SK1304 2SK2955 2SK2932 2SK2796( L ) 2SJ293 2SJ280


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PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent .model 2SK216 DRUM DRIVER 2sj44
2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK1317 equivalent 2SJ182 equivalent 2SK215 equivalent 2SJ40 2sj332 2sk1058 equivalent
Text: , 120 V, 150 V, 200 V, 250 V 5. The chart above does not show L ' and s j indicating long and , ^O S (on| L Ciss Drive Loss Pd (mW)*3 7 Max (PF) 0.028 750 T0220CFM 2SK2736 2SK2737 , . 2SK1304 2SK2955 2SK2932 2SK2796( L ) 2SJ293 2SJ280 2SJ505 4AK18 4AK22 TO-220FM T0-220CFM LDPAK T0-220FM DPAK , (1.4) Q 2&J486 (P.5) O 9 S K 2 M 0 JOM l * 2SJ363 (0.6) * HATlOMfliOia * HftT2D16fif0 , °C S > lD x R0 S (o n ), l D= 1/2 lDmax 2 . Test conditions: VD 3. 2.5-V driving 47 Table 2-7


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PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK1317 equivalent 2SJ182 equivalent 2SK215 equivalent 2SJ40 2sj332 2sk1058 equivalent
2SK1778

Abstract: 2SJ236 2SK1776 2SK1094 2SK1093 2SJ237 2sj177 2SJ182 2SJ176 2SJ175
Text: 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , Battery Operating Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 , * 0.1 2 1 26FM 2SJ300 -20 -10 * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK , 2SJ296 -15 0.1 2 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 DPAK 2SK1949 5 0.2


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PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2SK1776 2SK1094 2SK1093 2SJ237 2sj177 2SJ182 2SJ176 2SJ175
2SK1778

Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Text: 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , Battery Operating Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 , * 0.1 2 1 26FM 2SJ300 -20 -10 * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK , 2SJ296 -15 0.1 2 0.095 LDPAK 2SJ297 -20 0.095 0.065 2SJ280 -30 0.06 0.043 DPAK 2SK1949 5 0.2


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PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042
2SJ295

Abstract: V1LD
Text: d = -1 5 A, VG S = -1 0 V, = Rl 2Q t, VD F - - lF = -3 0 A, VG S = 0 l F= -3 0 A, VG S = 0, dip/dt = 50 A/jis tfr - - See characteristic curves of 2SJ280 HITACHI , cycle < 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg > 50 Q Symbol VD S S V qss R atings -6 , -6 0 ±20 - - Symbol V(BR)DSS Typ - Max - Unit V V ha hA Test co nd itio ns l D = -1 0 mA, VG S = 0 la = ±200 nA, VD S = 0 VG s = ±16 V, VD S = 0 VD S = -5 0 V , V gs = 0 l0 = -1 mA


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PDF 2SJ295 2SJ280 2SJ295 V1LD
2SJ295

Abstract: No abstract text available
Text: 2SJ295 Silicon P C h a n n e l M O S F E T Application High speed power switching Features · · · · Low on- resistance High speed switching Low drive current 4 V gate drive device can be , - V Iq = ±200 |iA, V pg = 0 'g s s 'd s s VGS(off) RDS(on) - - -1 .0 - - - 0.033 , 0.045 0.06 Cl Forward transfer admittance lytsl 17 25 - S Input capacitance , / ^is See charactristics curves of 2SJ280 2 2SJ29S Power vs. Temperature Derating


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PDF 2SJ295 2SJ280 2SJ29S 2SJ295
2SJ292

Abstract: No abstract text available
Text: l F = -3 0 A, VG S = 0 lF = - 3 0 A, VG S = 0, dip/dt = 50 A/(is t, See characteristic curves , )DS5 Typ - - Max - - ±10 Unit V V |iA Test conditions l0 = - 10 mA, VG S = 0 lG = ±200 (iA, VD g= 0 VG S = ± 1 6 V , V ds = 0 Vos = -5 0 V, VG S = 0 l0 = -1 mA, Vos = - 1 0 V lD = - 1 5 A. VG S = - 10 V *1 Id = - 1 5 A, VG S = - 4 V *' I d = - 1 5 A, V D S = -1 0 V*1 VD S = -1 0 V, VG S = 0, f = 1 MHz -6 0 ±20 - - V(BR)GSS . ^ G S S loss ^ G S (o if) ^D S (o n) -


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PDF 2SJ292 2SJ280 2SJ292
2sj217

Abstract: pf0030 hitachi 2SJ220 2SJ214 PF0042 PF0030 KWSA103 PF0040 2SK1919 hitachi S Mosfet pf0042
Text: 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 , Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 , 2SJ300 -20 -10 * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2


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PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sj217 pf0030 hitachi 2SJ220 2SJ214 PF0042 2SK1919 hitachi S Mosfet pf0042
2SK1778

Abstract: 2sj177 2SJ236 pf0030 hitachi 2SK1093 2SJ237 2SJ182 2SJ176 pf0042 2SK1919
Text: 0.065 2SJ280 -30 0.06 0.043 D-III L Series Item Package Type Ratinq RDS(on). max Vdss(V , | PPOISO Power MOSFETs D-IV L Series Item Package Type Rating RDS(on) max Vdss(V) ld(A) 4V<0 , 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 , Operating Equipment P channel MOSFET Vcc I ^ Load VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 , 26FM 2SJ300 -20 -10 * 0.08 DPAX 2SJ299 - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5


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PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2sj177 2SJ236 pf0030 hitachi 2SK1093 2SJ237 2SJ182 2SJ176 pf0042 2SK1919
2SJ28

Abstract: No abstract text available
Text: 2SJ292 Silicon P C h a n n e l M O S F E T Application High speed power switching Features · · · · Low on- resistance High speed switching Low drive current 4 V gate drive device can be , - V Iq = ±200 |iA, V pg = 0 'g s s 'd s s VGS(off) RDS(on) - - -1 .0 - - - 0.033 , 0.045 0.06 Cl Forward transfer admittance lytsl 17 25 - S Input capacitance , / ^is See characteristic curves of 2SJ280 2


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PDF 2SJ292 2SJ280 2SJ28
Not Available

Abstract: No abstract text available
Text: = - 1 5 A, VG = - 1 0 V, S RL = 2 £2 1. Pulse test See characteristic curves of 2SJ280 , 25 °C) Item Symbol Gate to source voltage ^G S S Unit -6 0 Drain to source , )DSS -6 0 — — V lD= - 1 0 mA, VG = 0 S Gate to source breakdown voltage ^(BR)GSS ±20 — — V lG= ±200 nA, V D = 0 S — ±10 Gate to source leak , ) p VG = ±16 V, V D = 0 S S -2 5 0 V D = — V, VG = 0 S 50 S -2 .2 5 • 0


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PDF 2SJ292 2SJ280
2SK1778

Abstract: 2SK109 2SJ236 2SJ176 2SJ182 2SJ175 2SJ237 2SK1093 2SK1094 2SK1776
Text: 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 , VCC (V) VOSS (V) typ« No. S ~9 12~20 2SJ244 12—24 30 2SJ246 24~40 60 2SJ245 Power management , - s * 0.1 2 UPAK 2SJ278 -1 1.2 0.83 DPAK 2SJ279 -5 0.27 0.2 Pch 2SJ290 -15 0.1 2 0.095 TO , 2SJ280 -30 0.06 0.043 DPAK 2SK1949 5 0.2 0.1 5 2SK1950 3 0.3 0.25 TO- 2SK1910 25 0.06 0.04 , LDPAK 2SK1918 25 0.06 0.04 2SK1919 40 0.028 0.022 2.5v drive 2.5v drive D-III L Series Item


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PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SJ176 2SJ182 2SJ175 2SJ237 2SK1093 2SK1094 2SK1776
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