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2SJ259-DL-E - Bulk (Alt: 2SJ259-DL-E) 2SJ259-DL-E ECAD Model
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Avnet 2SJ259-DL-E Bulk 0 1 Weeks 1 - - - - - Get Quote
ISC
2SJ259 D²PAK/TO-263 2SJ259 ECAD Model
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Karl Kruse GmbH & Co KG 2SJ259 5,000 - - - - - Get Quote

2SJ259 datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
2SJ259 2SJ259 ECAD Model Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
2SJ259 2SJ259 ECAD Model Others P-Channel Power MOSFET Scan PDF
2SJ259 2SJ259 ECAD Model Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
2SJ259 2SJ259 ECAD Model Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
2SJ259 2SJ259 ECAD Model Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
2SJ259FD 2SJ259FD ECAD Model Others P-Channel Power MOSFET Scan PDF

2SJ259 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - EN4233

Abstract: 2SJ259
Text: processes for 2SJ259-applied equipment. · High density surface mount applications. · Small size of 2SJ259-applied , Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [ 2SJ259 ] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 , 1.3 1.4 9.9 3.0 [ 2SJ259 ] 1.5max 8.8 0.8 10.2 2.55 0 to 0.3 0.4 1 : Gate , , Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42899TH (KT)/51193TH (KOTO) AX-8376 No.4233­1/4 2SJ259


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PDF EN4233 2SJ259 2SJ259] 2SJ259-applied EN4233 2SJ259
2SJ259

Abstract: No abstract text available
Text: processes for 2SJ259-applied equipment. · High density surface mount applications. · Small size of 2SJ259-applied , Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [ 2SJ259 ] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 , 2.55 2.55 unit:mm 2090A [ 2SJ259 ] 1 0.8 3 1.2 2.55 2.7 2.55 2 2.55 1.3 , , TOKYO, 110-8534 JAPAN 42899TH (KT)/51193TH (KOTO) AX-8376 No.4233­1/4 2SJ259 Specifications


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PDF EN4233 2SJ259 2SJ259] 2SJ259-applied 2SJ259
AX-8376

Abstract: 2SJ259
Text: device making the following possible. - Reduction in the number of manufacturing processes for 2SJ259-applied equipment. ■High density surface mount applications. ■Small size of 2SJ259-applied equipment ,  2SJ259 2093 2090 LD (Low Drive) Series VDSS = 30V P Channel Power MOSFET ©4233 Features , : SMP-FD 51193TH (KOTO) AX-8376 No.4233-1/3 D 7cH707fcj □□13ÖM4 IDT M 47 2SJ259 Continued from , -2 -4 -6 -8 -10 -12 Gate to Source Voltage,Vqs — V 14 -16 48 7^707^ G013Ö45 04b 2SJ259 120


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PDF 2SJ259 2SJ259-applied 10//s, 001364b AX-8376 2SJ259
2SJ259

Abstract: 8g51
Text: for 2SJ259-applied equipment. • High density surface mount applications. ■Small size of 2SJ259-applied , Ordering number: EN4233 No.4233 _ 2SJ259 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface , .4233-1/3 2SJ259 Continued from preceding page. min typ max unit Input Capacitance Ciss vDS= -10V,f= 1MHz , Source Vòltagfe,VGS ^ V -16 No.4233-2/3 2SJ259 - 120 RDS(on) - Tc 100 "I 80 « at V , S g à 5 3M G Q S


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PDF EN4233 2SJ259 2SJ259-applied 10/is, 8g51
2SJ259

Abstract: ITR00218 ITR00219 ITR00220 ITR00221
Text: No.N 4 2 3 3 2SJ259 No. 4 2 3 3 52099 2SJ259 P MOS , Absolute Maximum Ratings / Ta=25 VDSS (DC) - 30 unit V ± 15 - 20 V A - 80 1.65 , 2SJ259 yfs min 8.5 typ 14 max unit S 40 55 VDS= - 10V, ID= - 10A ID= - , =10µs D.C.1% VOUT G P.G 2SJ259 50 S V 5.0 -4.0V -25 -20 -3.5V -15 , ) - m 2SJ259 3 5 IT00225 PD - Tc 80 70 1.65 1.6 , PD - W , PD - W


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PDF 2SJ259 IT00224 --15V --10V ITR00222 --10A IT00225 IT00226 2SJ259 ITR00218 ITR00219 ITR00220 ITR00221
Not Available

Abstract: No abstract text available
Text: for 2SJ259-applied equipm ent. · High density surface m ount applications. · Sm all size of 2SJ259-applied , 2SJ259 2093 20 90 LD (Lo w D r iv e ) S e r i e s V Dss= =30V P Channel Power M OSFET '£42 33 F e a tu re s - Low ON resistance. - Very high-speed switching. Low-voltage drive. Surface m , : Source SANYO :SMP-FD 51193TH (KOTO) AX-8376 No.4233-1/3 47 2SJ259 C ontinued from preceding , mil 2SJ259 Allowable Power Dissipation, PD - W -pF I 8 I P > CO


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PDF 2SJ259 2SJ259-applied --10V
Not Available

Abstract: No abstract text available
Text: 2SJ259 Transistors P-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)30 V(BR)GSS (V)15 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)80 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.65 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V)2.0 V(GS)th (V) (Min)1.0 @(VDS) (V) (Test Condition)10 @I(D) (A) (Test Condition)1.0m I(DSS) Max. (A)100u @V(DS) (V


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PDF 2SJ259
2SK2164

Abstract: 2SK1885 2SJ260 2SJ270 2sj261
Text: 70m/95m 1300 2SJ258 SMP 2SJ259 ±15 20 80 70 40m/55m 2000 2SJ259 2SJ400 ±20 35 140 70 40m/55m 4000


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PDF 2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2SK2164 2SK1885 2SJ260 2SJ270 2sj261
2SJ469

Abstract: No abstract text available
Text: /0.12 0.2/0.3 2SJ189 2SJ417 2SJ418 2SJ467 2SJ421 2SJ468 2SJ469 FW102 FW103 FW106 2SJ257 2SJ258 2SJ259


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PDF 2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469
2SJ437

Abstract: 2SK244
Text: ) 2SJ418 2SJ466 2SJ437 2SJ257 2SJ258 2SJ259 2SJ400 2SJ421 2SK2440 2SK2441 2SK2442 FW102 FW201 FW202 FVV203


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PDF SB20W03P SB40W03T SBA100-04ZP SBA160-Q4ZP SBA50-04Y SBA10Q-04Y SBA160-04Y characteristicsSJ466 2SJ437 2SJ257 2SK244
2SK2439

Abstract: SBA10Q-O4Y 2SJ40 FW106 SK2555
Text: 1000 2SJ257 r2S J258 2SJ259 2SJ266 2SJ267 2SJ268 2SJ340 2SJ400 2SJ414 SMP-FD 30 10 12 20 8


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PDF SB20W03P SB30-03P SB40W SBA50-04Y SBA10Q-O4Y SBA130-04ZP SBA160-04Y SBA160-04ZP 250mm2 2SJ469 2SK2439 2SJ40 FW106 SK2555
2S1265

Abstract: bj 950 131- 6 2SK1885 2SK1883 2sj262 2SK3066 2SJ type 2SK2432 2SJ253 2sj265
Text: 1300 2SJ258 2SJ259 ±20 20 80 70 1 — 2 55m/75m 40m/55m 2000 2SJ259 2SJ400 SMP ±20 35 140 70 1


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PDF low-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> 2S1265 bj 950 131- 6 2SK1885 2SK1883 2sj262 2SK3066 2SJ type 2SK2432 2SJ253 2sj265
2SJ271

Abstract: 2SJ468 2SJ191 2SJ337 2SJ336 2SJ281 2SJ195 2SJ194 2SJ19 2SJ189
Text: 60* 150 1 to 2 0.13 6.0 4 8.0 10 6.0 2SJ259 SMP Ultrahigh-speed switching 30 ±15 20.0 70* 150 1 to


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PDF 2SJI88 2SJ189 2SJ191 2SJ192 2SJ194 2SJ195 2SJ253 T0220 2SJ260 2SJ271 2SJ468 2SJ337 2SJ336 2SJ281 2SJ19
2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: 2SJ259 2SJ400 2 SKI889 2SK1890 2SK1891 V D S S 2SJ260 2SJ261 2SJ262 2SJ348 2SK1892 2SK1893 2SK1894 2SJ263 , 2SJ259 2SJ400 2 SKI889 2SK1890 2SK1891 2SJ260 2SJ261 2SJ262 2SJ348 2SK1892 2SK1893 2SK1894 2SJ263 2SJ264


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PDF 2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2sk1885 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
TN6Q04

Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK4087LS datasheet 2SK4101LS 2SK3748
Text: 2SJ256 20 60 2SJ259 35 2SJ400 8 2SJ415 12 2SJ650 14 2SJ659 15 2SJ414 , . Type No. VDSS VGSS ID (V) 2SJ257 2SJ258 30 2SJ259 2SJ400 2SJ659 2SJ660 60 2SJ661 2SJ662


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PDF O-220 O-220ML O-220FI O-220FI5H O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK4087LS datasheet 2SK4101LS 2SK3748
2SK1925

Abstract: No abstract text available
Text: maximum ratings I Package j *»1» 2SJ259 ‘ SM P Very high-speed switch 60 Â


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PDF 2SK1737 2SK1738 T0220 2SK1921* 2SK2142* 2SJ254 0220M 2SK1925
TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls INV250 2SK4101LS 2SJ406 2SK4096LS 2SK3745LS 2SJ584
Text: Type No. Type No. 2SJ257 12 2SJ258 18 2SJ256 20 60 2SJ259 35 2SJ400 8 , . Type No. VDSS VGSS ID (V) 2SJ257 2SJ258 30 2SJ259 2SJ400 2SJ659 2SJ660 60 2SJ661 2SJ662


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PDF O-220MF O-220FI O-220FI5H O-220ML O-126 O-126LP O-126ML O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2sk4100 2SJ585 2SK4100ls INV250 2SK4101LS 2SJ406 2SK4096LS 2SK3745LS 2SJ584
2sk3436

Abstract: 2sc6093 2Sa1872 2SK3850 2SK1597 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 2SJ589LS 2SJ650 2SJ259 - 2SJ416 - 2SJ590LS 2SJ651 2SJ260 - 2SJ417 -


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PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK3850 2SK1597 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 2sc5267 TT2084 2sk3744
Text: 2SJ415 - 2SJ589LS 2SJ650 2SJ259 - 2SJ416 - 2SJ590LS 2SJ651 2SJ260 -


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PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 2sc5267 TT2084 2sk3744
on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 CPH5612 MCH5803 3ln03 LCD tv smp circuit diagram 2SJ193 mark
Text: 600 800 900 Nch Package VDSS(V) 2SJ257 2SJ258 2SJ259 2SJ400 2SK1889 2SK1890


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PDF EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 CPH5612 MCH5803 3ln03 LCD tv smp circuit diagram 2SJ193 mark
TO-32-070

Abstract: 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
Text: 2SK1731 2SK1732 2SK1734 2SK1735 2SK1737 2SK1738 2SJ257 2SJ259 2SJ266 2SJ268 2SJ275 2SJ277 2SK1690 2SK1691


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PDF T0220ML TO-32-070 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
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