The Datasheet Archive

2SJ226 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
2SJ226 2SJ226 ECAD Model Sanyo Semiconductor Ultrahigh-speed switching Original PDF
2SJ226 2SJ226 ECAD Model Others FET Data Book Scan PDF
2SJ226 2SJ226 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ226 2SJ226 ECAD Model Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF

2SJ226 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - Not Available

Abstract: No abstract text available
Text: Ordering number:EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm 2085A [ 2SJ226 ] 1.9 , , Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40199TH (KT)/41293YK (KOTO) 8-7975 No.3811–1/4 2SJ226 , €“1.0 ns –1.5 V Switching Time Test Circuit No.3811–2/4 2SJ226 No.3811–3/4 2SJ226


Original
PDF EN3811 2SJ226 2SJ226]
2085A

Abstract: 2SJ226 a22t ITR00100 ITR00099 ITR00098 ITR00097 ITR00096 ITR00095 38112
Text: No.N 3 8 1 1 2SJ226 No. 3 8 1 1 51899 2SJ226 P MOS 9.5mm Absolute Maximum Ratings / Ta=25 (DC) () ID IDP unit VDSS VGSS - 30 ± 15 V , : Gate 2.5 SANYOFLP 370-0596 11 51899 SI IM/7111MH 8-7975 No.3811-1/3 2SJ226 min , =15 VIN D PW=10µs D.C.1% VOUT G P.G 2SJ226 50 S ID - VDS -2 -2.8V , VDS 3 ID=-1A Ciss, Coss, Crss - pF , RDS(on) - 2SJ226 DC s op era


Original
PDF 2SJ226 ITR00101 ITR00100 --15V --10V ITR00099 ITR00102 ITR00103 2085A 2SJ226 a22t ITR00100 ITR00099 ITR00098 ITR00097 ITR00096 ITR00095 38112
Not Available

Abstract: No abstract text available
Text: 2SJ226 2085 LD (L o w D rive) S eries VD ss = 3 0 V P Channel Power M OSFET E -381 I F e a tu re s Low ON resistance. Very high-speed switching. Low-voltage drive. · Its height onboard is 9.5mm. Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss , Drain Current,Ip -A Drain C urrent,ID - A Drain to Source Voltage,VDS I 2SJ226 S tatic , W (a ) Allowable Power Dissipation, PD -W 2SJ226


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PDF 2SJ226 41293YK
1999 - EN3811

Abstract: 2SJ226
Text: Ordering number:EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching , Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm 2085A [ 2SJ226 ] 1.9 , ) 8-7975 No.3811­1/4 2SJ226 Continued from preceding page. Parameter Symbol Conditions , IS=­2A, VGS=0 ­1.0 ns ­1.5 V Switching Time Test Circuit No.3811­2/4 2SJ226 No.3811­3/4 2SJ226 Specifications of any and all SANYO products described or contained herein stipulate


Original
PDF EN3811 2SJ226 2SJ226] EN3811 2SJ226
DS-16 SANYO

Abstract: 2SJ226
Text: Ordering number:EN3811 I SAiYO No.3811 2SJ226 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive, • Its height onboard is 9.5mm. • Meets radial taping. Absolute Maximum Ratings at Ta = 25°C Drain to Source , , TOKYO, 110 JAPAN 41293YK (KOTO) 8-7975 No.381M/3 2SJ226 - 5 - 4 < I Q - 3 - 2 - 1 ID - VDS Q/Ad -3.6V , 2SJ226 ■No products described or contained herein are intended for use in surgical implants


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PDF EN3811 2SJ226 10//S, 100//A DS-16 SANYO
2SJ469

Abstract: No abstract text available
Text: 2SJ400 2SJ225 2SJ226 2SJ227 2SJ251 2SJ252 2SJ253 2SJ254 2SJ255 2SJ256 * Tc = 25°C t Ta = 25°C 4.0 500


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PDF 2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469
2sc5203

Abstract: 2SK3615 2sk*3615 TIG022TS 2SK1731 2SJ646 2SJ633 2SK3492 2SJ636 MCH6005
Text: 2SJ226 2SJ646 2SK1735 2SK3615 2SJ227 2SJ646 2SK1737 2SK3617 2SJ229 2SJ633


Original
PDF CPH6405 CPH6434 TIG008SS TIG014SS TIG002SS TIG008TS TIG022TS TIG004SS 2sc5203 2SK3615 2sk*3615 TIG022TS 2SK1731 2SJ646 2SJ633 2SK3492 2SJ636 MCH6005
2S*1206

Abstract: 2S1201 2S1204 2SJ214LS 2SJ224 2SJ202 2SJ201 2SJ214 2SJ200 2D8-a
Text: 0. 6 1 -10 -0. 5 2SJ226 hff HS SW MOS P E -30 DSS ±15 s -2 D 1. 5 ±10« ±12 -0. Ib -30 -1 -2 , =37ns. toff=180nstyp 1D=-1A, VP»=-15V 347 SDG 2SJ226 1000 220 -10 0. 13 -10 -1.5 ton-60ns, toff


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PDF Ta-25 2SJ200 2SJ201 2SJ202 2SJ203 -200b 2SJ204 2SJ221 130ns, 490nstyp 2S*1206 2S1201 2S1204 2SJ214LS 2SJ224 2SJ201 2SJ214 2D8-a
Not Available

Abstract: No abstract text available
Text: ±18 12.0 30 0* 150 1.0 to 2.0 0.058 6.0 4 10.0 10 6.0 2SJ226 FLP Very


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PDF 2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD
2SJ271

Abstract: 2SJ468 2SJ191 2SJ337 2SJ336 2SJ281 2SJ195 2SJ194 2SJ19 2SJ189
Text: drives 250 ±30 9.0 50* 150 2 to 3 0.55 5.0 10 8.0 10 5.0 2SJ226 FLP Ultrahigh-speed switching 30 Â


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PDF 2SJI88 2SJ189 2SJ191 2SJ192 2SJ194 2SJ195 2SJ253 T0220 2SJ260 2SJ271 2SJ468 2SJ337 2SJ336 2SJ281 2SJ19
TO-32-070

Abstract: 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
Text: 2SJ191 2SJ192 2SJ194 2SJ195 2SJ281 2SK1468 2SK1469 2SK1471 2SK1472 2SK1474 2SK1475 2SK1920* 2SJ226 2SJ227


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PDF T0220ML TO-32-070 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
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