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ERG-2SJ222 Panasonic Electronic Components RES 2.2K OHM 2W 5% METAL OXIDE
ERG-2SJ222A Panasonic Electronic Components RES 2.2K OHM 2W 5% METAL OXIDE
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ERG-2SJ222 Panasonic Electronic Components Future Electronics - $0.05 $0.04
ERG-2SJ222 Panasonic Electronic Components Master Electronics 11,986 $0.14 $0.04
ERG-2SJ222 Panasonic Electronic Components Chip1Stop 5,870 $0.19 $0.10
ERG-2SJ222A Panasonic Electronic Components Bristol Electronics 6,000 $0.26 $0.05
ERG12SJ222 Panasonic Electronic Components Newark element14 913 $0.24 $0.03
ERG12SJ222 Panasonic Electronic Components Allied Electronics & Automation - $0.05 $0.04
ERG12SJ222 Panasonic Electronic Components element14 Asia-Pacific 1,432 $0.36 $0.05
ERG12SJ222 Panasonic Electronic Components Farnell element14 943 £0.08 £0.03
ERG2SJ222A Panasonic Electronic Components Avnet - - -
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ERG2SJ222E Panasonic Electronic Components Avnet - $0.05 $0.05
ERG2SJ222V Panasonic Electronic Components Avnet - $0.04 $0.04

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2SJ222 datasheet (11)

Part Manufacturer Description Type PDF
2SJ222 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
2SJ222 Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF
2SJ222 Renesas Technology Silicon P Channel MOS FET Original PDF
2SJ222 Renesas Technology Silicon P-Channel MOS FET Original PDF
2SJ222 Hitachi Semiconductor Power Transistors Data Book Scan PDF
2SJ222 Hitachi Semiconductor Silicon P-Channel MOS FET Scan PDF
2SJ222 Others FET Data Book Scan PDF
2SJ222 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ222 Others Catalog Scans - Shortform Datasheet Scan PDF
2SJ222 Others Catalog Scans - Shortform Datasheet Scan PDF
2SJ222-E Renesas Technology Silicon P Channel MOS FET Original PDF

2SJ222 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - Hitachi 2SJ

Abstract: Hitachi DSA002779
Text: 2SJ222 Silicon P-Channel MOS FET Application High speed power switching Features · · · · , source · Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SJ222 , 2 2SJ222 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to , - Zero gate voltage drain current IDSS See characteristic curves of 2SJ221 3 2SJ222 4 2SJ222 When using this document, keep the following in mind: 1. This document may, wholly


Original
PDF 2SJ222 Hitachi 2SJ Hitachi DSA002779
1999 - Hitachi 2SJ

Abstract: Hitachi DSA002756
Text: 2SJ222 Silicon P-Channel MOS FET Application High speed power switching Features · · · · Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source · Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SJ222 , °C °C 2 2SJ222 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage , characteristic curves of 2SJ221 3 2SJ222 4 2SJ222 When using this document, keep the following


Original
PDF 2SJ222 Hitachi 2SJ Hitachi DSA002756
1999 - Hitachi 2SJ

Abstract: Hitachi DSA00279
Text: 2SJ222 Silicon P-Channel MOS FET Application High speed power switching Features · · · · Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source · Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SJ222 , °C °C 2 2SJ222 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage , characteristic curves of 2SJ221 3 2SJ222 4 2SJ222 When using this document, keep the following


Original
PDF 2SJ222 Hitachi 2SJ Hitachi DSA00279
Not Available

Abstract: No abstract text available
Text: 2SJ222 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features · · · · Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be , Outline TO-220FM 1. Gate 2. Drain 3. Source 253 2SJ222 Absolute Maximum Ratings (Ta = 25 , HITACHI 254 2SJ222 E lectrical C h aracteristics (Ta = 25 °C) Item Drain to source breakdown , characteristic curves o f 2SJ221 HITACHI 255 2SJ222 Power vs. Temperature Derating -100 Maximum Safe


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PDF 2SJ222 O-220FM 2SJ221
Not Available

Abstract: No abstract text available
Text: 2SJ222 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current , , DC-DC converter, power switch and solenoid drive Outline 2SJ222 Absolute Maximum Ratings (Ta = , HITACHI 2SJ222 Electrical Characteristics (Ta = 25 °C) Item Sym bol Drain to source breakdown , 2SJ222


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PDF 2SJ222 2SJ221
2000 - 2SJ221

Abstract: 2SJ222 Hitachi 2SJ
Text: products contained therein. 2SJ222 Silicon P-Channel MOS FET ADE-208-1186 (Z) 1st. Edition Mar , . Gate 2. Drain 3. Source G S 2SJ222 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , . PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SJ222 Electrical Characteristics (Ta = 25 , of 2SJ221 3 2SJ222 Maximum Safe Operation Area Power vs. Temperature Derating ­100 40 , 2SJ222 Package Dimensions 10.0 ± 0.3 2.8 ± 0.2 7.0 ± 0.3 2.5 ± 0.2 Unit: mm 0.7 ± 0.1


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PDF
1998 - Hitachi DSA002713

Abstract: No abstract text available
Text: 2SJ222 Silicon P-Channel MOS FET November 1996 Application High speed power switching , Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ222 Absolute Maximum , Tstg 2 1 Ratings ­100 ±20 ­15 ­60 ­15 35 150 ­55 to +150 Unit V V A A A W °C °C 2 2SJ222 , resistance ID = ­10 A, VDS = ­10 V* 1 See characteristic curves of 2SJ221 3 2SJ222 Power vs , Pulse ho 1S 100 µ 1m 10 m Pulse Width PW (s) 100 m T 0.01 10 µ 10 4 2SJ222 When


Original
PDF 2SJ222 O-220FM Hitachi DSA002713
2005 - 2SJ222

Abstract: 2SJ222-E PRSS0003AD-A
Text: Container 2SJ222-E 500 pcs Box (Sack) Note: For some grades, production may be terminated. Please , . 2SJ222 Silicon P Channel MOS FET REJ03G0852-0200 (Previous: ADE-208-1186) Rev.2.00 Sep 07, 2005 , of 6 S 2SJ222 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , 0 IF = ­20 A, VGS = 0 diF/dt = 50 A/µs Note 3 2SJ222 Main Characteristics Maximum Safe , ­0.1 ­0.3 ­1 ­3 Drain Current ­10 ­30 ID (A) 100 2SJ222 Forward Transfer


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PDF
2005 - 2SJ222-E

Abstract: 2SJ222 PRSS0003AD-A
Text: Container 2SJ222-E 500 pcs Box (Sack) Note: For some grades, production may be terminated. Please , 2SJ222 Silicon P Channel MOS FET REJ03G0852-0200 (Previous: ADE-208-1186) Rev.2.00 Sep 07 , , 2005 page 1 of 6 S 2SJ222 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source , IF = ­20 A, VGS = 0 IF = ­20 A, VGS = 0 diF/dt = 50 A/µs Note 3 2SJ222 Main , 0.03 0.01 0.005 ­0.1 ­0.3 ­1 ­3 Drain Current ­10 ­30 ID (A) 100 2SJ222


Original
PDF 2SJ222 REJ03G0852-0200 ADE-208-1186) PRSS0003AD-A O-220FM) 2SJ222-E 2SJ222 PRSS0003AD-A
2SJ222

Abstract: 2SJ221 Hitachi Scans-001
Text:  2SJ222 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate , www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer 2SJ222 , Respective Manufacturer 2SJ222 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test , service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer 2SJ222 Power vs


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PDF 2SJ222 T0220FM -15oltage 2SJ221 2SJ222 2SJ221 Hitachi Scans-001
2000 - 2SJ221

Abstract: 2SJ222 Hitachi 2SJ DSA003638
Text: 2SJ222 Silicon P-Channel MOS FET ADE-208-1186 (Z) 1st. Edition Mar. 2001 Application High , . Source G S 2SJ222 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit , , duty cycle 1% 2. Value at TC = 25°C 2 2SJ222 Electrical Characteristics (Ta = 25°C) Item , 2SJ222 Maximum Safe Operation Area Power vs. Temperature Derating ­100 40 20 Normalized , 100 µ T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 10 2SJ222 Package


Original
PDF 2SJ222 ADE-208-1186 O-220FM 2SJ221 2SJ222 Hitachi 2SJ DSA003638
2005 - Not Available

Abstract: No abstract text available
Text: Container 2SJ222-E 500 pcs Box (Sack) Note: For some grades, production may be terminated. Please , developed or manufactured by or for Renesas Electronics. 2SJ222 Silicon P Channel MOS FET REJ03G0852 , . Drain 3. Source G 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 S 2SJ222 Absolute Maximum , = 50 A/µs Note 3 2SJ222 Main Characteristics Power vs. Temperature Derating Maximum , 0.005 –0.1 –0.3 –1 –3 Drain Current –10 –30 ID (A) 100 2SJ222


Original
PDF
1999 - 2SJ221

Abstract: 2SJ222 Hitachi 2SJ Hitachi DSA00389
Text: 2SJ222 Silicon P-Channel MOS FET Application High speed power switching Features · · · · Low on-resistance High speed switching Low drive current 4 V gate drive device Can be , Outline TO-220FM D 1 2 3 1. Gate 2. Drain 3. Source G S 2SJ222 Absolute , 2SJ222 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test , . Pulse test See characteristic curves of 2SJ221 3 2SJ222 Maximum Safe Operation Area Power


Original
PDF 2SJ222 O-220FM 2SJ221 2SJ222 Hitachi 2SJ Hitachi DSA00389
2SJ221

Abstract: 2SJ222
Text: HITACHI 2SJ222- SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device - Can be driven from 5V source • Suitable for Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive 1.Gate 2. Drain 3. Source (Dimension,« in mm) rj vi : L&ULSJ. (TO-220FM) IABSOLUTE MAXIMUM RATINGS (Ta = 25 , 2SJ222 MAXIMUM SAFE OPERATION AREA — H 1° 4-H -i V fh t m fk - II 5jftt li


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PDF 2SJ222- O-220FM) 2SJ221â 2SJ222 2SJ221 2SJ222
2005 - Not Available

Abstract: No abstract text available
Text: 0.5 ± 0.1 Ordering Information Part Name Quantity Shipping Container 2SJ222-E 500 pcs , developed or manufactured by or for Renesas Electronics. 2SJ222 Silicon P Channel MOS FET REJ03G0852 , . Drain 3. Source G 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 S 2SJ222 Absolute Maximum , = 50 A/µs Note 3 2SJ222 Main Characteristics Maximum Safe Operation Area Power vs , €“1 –3 Drain Current –10 –30 ID (A) 100 2SJ222 Forward Transfer Admittance vs


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2SK1778

Abstract: 2sk1299 4AK22 2sj177 4AM12 transistor 2sk1304 2SK975 2SK973 2SK970 transistor 2sk
Text: 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 , 0.45 0.25 0.3 5.5 59 225 880 2SJ222 -20 35 0.16 0.22 0.12 0.16 12 130 490 1800 2SK1297 40 100


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PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AK22 2sj177 4AM12 transistor 2sk1304 2SK975 2SK973 2SK970 transistor 2sk
2SK1778

Abstract: 2SK1776 2SK1665 2SK1094 2SJ236 2sj177 2SK580 2SJ175 2SK1153 2SK1152
Text: 2SK1665 DC-DC Converter DC24V 2SJ278 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 , 1300 2SJ248 -100 -8 25 0.3 0.45 0.25 0.3 5.5 59 225 880 2SJ222 -20 35 0.16 0.22 0.12 0.16 12 130


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK1778 2SK1776 2SK1665 2SK1094 2SJ236 2sj177 2SJ175
2sj177

Abstract: 2sk1778 2sk1301 2SK97-2 2SK580 2SK579 2SK1153 2SK1152 2SK1151 2sj175
Text: 2SK1665 DC-DC Converter DC24V 2SJ278 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 , 25 0.3 0.45 0.25 0.3 5.5 59 225 880 2SJ222 -20 35 0.16 0.22 0.12 0.16 12 130 490 1800 2SK1297


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sj177 2sk1778 2sk1301 2SK97-2 2sj175
2S*1206

Abstract: 2S1201 2S1204 2SJ214LS 2SJ224 2SJ202 2SJ201 2SJ214 2SJ200 2D8-a
Text: ±20 s -20 D 75 ±10« ±16 -. 25b -80 -1 -2 -10 -1« 7.5 12 -10 -10 2SJ222 BÍL Motor/Relay-D MOS , 116B GDS 2SJ221 1800 145 0 -10 0.16 -10 -10 ton=130ns, toff=490nstyp !D=-10A 292 GDS 2SJ222 230


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PDF Ta-25 2SJ200 2SJ201 2SJ202 2SJ203 -200b 2SJ204 2SJ221 130ns, 490nstyp 2S*1206 2S1201 2S1204 2SJ214LS 2SJ224 2SJ201 2SJ214 2D8-a
2SK1778

Abstract: 2SK109 2SJ236 2SJ176 2SJ182 2SJ175 2SJ237 2SK1093 2SK1094 2SK1776
Text: 2SK1298 2SK1665 DC-DC Converter DC24V 2SJ278 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 , 25 0.3 0.45 0.25 0.3 5.5 59 225 880 2SJ222 -20 35 0.16 0.22 0.12 0.16 12 130 490 1800 2SK1297


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PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SJ176 2SJ182 2SJ175 2SJ237 2SK1093 2SK1094 2SK1776
flyback 200w

Abstract: 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
Text: 2SK1665 DC-DC Converter DC24V 2SJ278 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK513 2SK822 2SK1762 2sk1328 2SK1094
2SK1778

Abstract: 2sj177 2SJ236 pf0030 hitachi 2SK1093 2SJ237 2SJ182 2SJ176 pf0042 2SK1919
Text: 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296 2SK740 2SK1301 2SK1306 2SK1620 2SK1918 2SJ280 2SJ297 2SK822 , 0.16 0.095 0.12 17 84 300 1300 2SJ248 -100 -8 25 0.3 0.45 0.25 0.3 5.5 59 225 880 2SJ222 -20 35


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PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2sj177 2SJ236 pf0030 hitachi 2SK1093 2SJ237 2SJ182 2SJ176 pf0042 2SK1919
2SJ177

Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Text: .- 247 2SJ222.


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PDF 2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
2SK1778

Abstract: 2SK1776 2SJ236 2SK1777 2SK1094 2SK1093 2SJ237 2SJ182 2SJ176 2SJ175
Text: 2SJ222 -20 35 0.16 0.22 0.12 0.16 12 130 490 1800 2SK1297 40 100 0.02 0.025 0.015 0.018 35 200 1050


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PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK1776 2SJ236 2SK1777 2SK1094 2SK1093 2SJ237 2SJ182 2SJ176 2SJ175
2SJ113

Abstract: 2cv1 2SK1635 2SK513 2SK1665 2SJ214 2SK1151 GN12030 2SK1153 2SK579
Text: 2SK1665 DC-DC Converter DC24V 2SJ278 2SK430 2SJ245 2SJ279 2SK1299 2SK1254 2SK1949 2SJ221 2SJ222 2SJ296


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ113 2cv1 2SK1635 2SK513 2SK1665 2SJ214 GN12030
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