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Panasonic Electronic Components
ERG2SJ200V Res Metal Oxide 20 Ohm 5% 2W ±350ppm/°C Conformal AXL Thru-Hole Ammo Pack (Alt: ERG2SJ200V) ERG2SJ200V ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (3) ERG2SJ200V Ammo Pack 0 12 Weeks, 1 Days 6,000 - - - - €0.06516 More Info
ERG2SJ200V Ammo Pack 0 1,000 - - - - - More Info
ERG2SJ200V Ammo Pack 0 10 Weeks 12,000 - - - - - More Info
Panasonic Electronic Components
ERG2SJ200A Res Metal Oxide 20 Ohm 5% 2W ±350ppm/°C Conformal AXL Thru-Hole - Ammo Pack (Alt: ERG-2SJ200A) ERG2SJ200A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet ERG2SJ200A Ammo Pack 0 10 Weeks 6,000 - - - - $0.04478 More Info
Panasonic Electronic Components
ERG12SJ200 Res Metal Oxide 20 Ohm 5% 1/2W ±350ppm/°C Conformal AXL Thru-Hole Bulk - Bulk (Alt: ERG-12SJ200) ERG12SJ200 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet ERG12SJ200 Bulk 0 10 Weeks 10,000 - - - - $0.02478 More Info
Panasonic Electronic Components
ERG2SJ200E Res Metal Oxide 20 Ohm 5% 2W ±350ppm/°C Conformal RDL Thru-Hole Ammo Pack - Ammo Pack (Alt: ERG-2SJ200E) ERG2SJ200E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet ERG2SJ200E Ammo Pack 0 10 Weeks 6,000 - - - - $0.05217 More Info
TE Connectivity Ltd
ROX2SJ200K Res Metal Oxide 200K Ohm 5% 2W ±350ppm/°C Conformal AXL Thru-Hole Ammo Pack (Alt: 8-1625890-5) ROX2SJ200K ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet ROX2SJ200K Ammo Pack 0 15 Weeks, 1 Days 4,000 - - - - €0.0316 More Info
Newark element14 ROX2SJ200K Bulk 0 4,000 $0.104 $0.092 $0.075 $0.049 $0.044 More Info
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Panasonic Electronic Components
ERG-2SJ200V NRFND 07/16/2019, NO REPLACEMENT ERG-2SJ200V ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 ERG-2SJ200V Bulk 0 1,000 $0.233 $0.137 $0.075 $0.057 $0.048 More Info
Panasonic Electronic Components
ERG-12SJ200 NRFND 07/16/2019, NO REPLACEMENT ERG-12SJ200 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 ERG-12SJ200 Bulk 0 1,000 $0.242 $0.127 $0.055 $0.032 $0.026 More Info
Panasonic Electronic Components
ERG-2SJ200A NRFND 07/16/2019, NO REPLACEMENT ERG-2SJ200A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 ERG-2SJ200A Bulk 0 3,000 $0.241 $0.141 $0.077 $0.059 $0.049 More Info
Panasonic Electronic Components
ERG-2SJ200E NRFND 07/16/2019, NO REPLACEMENT ERG-2SJ200E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 ERG-2SJ200E Bulk 0 1,000 $0.28 $0.164 $0.09 $0.068 $0.057 More Info
Panasonic Electronic Components
ERG-2SJ200 NRFND 07/16/2019, NO REPLACEMENT ERG-2SJ200 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 ERG-2SJ200 Bulk 0 1,000 $0.225 $0.132 $0.072 $0.055 $0.046 More Info
Onlinecomponents.com ERG-2SJ200 3,590 - - - $0.0475 $0.0475 More Info
Master Electronics ERG-2SJ200 3,590 15 Weeks - - - $0.0475 $0.0371 More Info
Panduit Corp
ERG2SJ200E ERG2SJ200E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics ERG2SJ200E 2,000 - - - - - More Info
ISC
2SJ200 TO-3PN 2SJ200 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Karl Kruse GmbH & Co KG 2SJ200 5,000 - - - - - More Info

2SJ200 datasheet (17)

Part ECAD Model Manufacturer Description Type PDF
2SJ200 2SJ200 ECAD Model Toshiba Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10) Original PDF
2SJ200 2SJ200 ECAD Model Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SJ200 2SJ200 ECAD Model Toshiba P-Channel MOSFET Original PDF
2SJ200 2SJ200 ECAD Model Toshiba Original PDF
2SJ200 2SJ200 ECAD Model Others FET Data Book Scan PDF
2SJ200 2SJ200 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ200 2SJ200 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SJ200 2SJ200 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SJ200 2SJ200 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SJ200 2SJ200 ECAD Model Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
2SJ200 2SJ200 ECAD Model Toshiba Field Effect Transistor Silicon P Channel MOS Type Scan PDF
2SJ200 2SJ200 ECAD Model Toshiba Silicon P channel field effect transistor for high power amplifier applications Scan PDF
2SJ200-O 2SJ200-O ECAD Model Toshiba 2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original PDF
2SJ200O 2SJ200O ECAD Model Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
2SJ200-Y 2SJ200-Y ECAD Model Toshiba 2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original PDF
2SJ200Y 2SJ200Y ECAD Model Toshiba TRANS MOSFET P-CH 180V 10A 3(2-16C1B) Scan PDF
2SJ200-Y(F) 2SJ200-Y(F) ECAD Model Toshiba 2SJ200 - MOSFET P-CH 180V 10A TO-3 Original PDF

2SJ200 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - 2SJ200

Abstract: 2sk1529 2sj200 Toshiba 2SJ
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application z High breakdown voltage z High forward transfer admittance z Complementary to 2SK1529 : VDSS = , 1 2006-11-16 2SJ200 Electrical Characteristics (Ta = 25°C) Characteristics Drain cut-off , electrostatic sensitive device. Please handle with caution. Marking 2 2006-11-16 2SJ200 3 2006-11-16 2SJ200 Switching Time Test Circuit Waveforms 4 2006-11-16 2SJ200


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PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529 2sj200 Toshiba 2SJ
2002 - 2SJ200

Abstract: 2sk1529/2sj200
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage High forward transfer admittance Complementary to 2SK1529 : VDSS = -180 V : |Yfs| = 4.0 S (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Drain-source voltage , with caution. 1 2002-06-05 2SJ200 2 2002-06-05 2SJ200 Switching Time Test Circuit Waveforms 3 2002-06-05 2SJ200 RESTRICTIONS ON PRODUCT USE 000707EAA ·


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PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529/2sj200
2002 - 2SJ200

Abstract: 2SJ20
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application High breakdown voltage High forward transfer admittance Complementary to 2SK1529 : VDSS = -180 V : |Yfs| = 4.0 S (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage , sensitive device. Please handle with caution. 1 2002-09-02 2SJ200 2 2002-09-02 2SJ200 Switching Time Test Circuit Waveforms 3 2002-09-02 2SJ200 RESTRICTIONS ON PRODUCT USE


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PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2SJ20
2002 - 2sj200

Abstract: 2SK1529 Toshiba 2SJ
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = -180 V l High forward transfer admittance : |Yfs| = 4.0 S (typ.) l Complementary to 2SK1529 Maximum Ratings (Ta = 25°C) Characteristics , sensitive device. Please handle with caution. 1 2002-09-02 2SJ200 2 2002-09-02 2SJ200 Switching Time Test Circuit Waveforms 3 2002-09-02 2SJ200 RESTRICTIONS ON PRODUCT USE


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PDF 2SJ200 2SK1529 2-16C1B 2sj200 2SK1529 Toshiba 2SJ
2009 - 2SJ200

Abstract: 2SK1529
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Yfs , , etc). 1 2006-11-16 2SJ200 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , handle with caution. Marking 2 2006-11-16 2SJ200 3 2006-11-16 2SJ200 Switching Time Test Circuit Waveforms 4 2006-11-16 2SJ200 RESTRICTIONS ON PRODUCT USE · Toshiba


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PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529
Not Available

Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O , . TOSHIBA CORPORATION 1/6 2SJ200 Electrical Characteristics (Ta = 25 C) CHARACTERISTIC D r a in - , .2 4 - |iC TOSHIBA CORPORATION 2SJ200 I d - v o s id iD - V Q S , 3 * 0 «9 1 Q TOSHIBA CORPORATION 3/6 2SJ200 C A PA C ITA N C E - V D S DRAIN , > w ü (tí D O D fti fd S O Û4 < ££ O 4/6 TOSHIBA CORPORATION 2SJ200


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PDF 2SJ200
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 2SJ200 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm 1 5.9 M A X. 03.2 ±0.2 · · · High Breakdown Voltage : V ]}g g = -180V High Forward Transfer Admittance : |Yfs|= 4.0S (Typ.) Complementary to 2SK 1529 , 1/3 TO SHIBA 2SJ200 id - vds id - vos DRAIN-SOURCE VOLTAGE Vd s (V , o u t notice. 0 1996 12-01 - 2/3 TO SHIBA 2SJ200 SW TIME - Id SAFE OPERATING


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PDF 2SJ200 --180V SC-65 2-16C1B
2SJ200

Abstract: 2SK1529 transistor application Toshiba 2SJ
Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance , 2006-11-16 2SJ200 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , handle with caution. Marking 2 2006-11-16 2SJ200 3 2006-11-16 2SJ200 Switching Time Test Circuit Waveforms 4 2006-11-16 2SJ200 RESTRICTIONS ON PRODUCT USE 20070701


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PDF 2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529 transistor application Toshiba 2SJ
2003 - Not Available

Abstract: No abstract text available
Text: 2SJ200 東芝電界効果トランジスタ シリコンPチャネルMOSå½¢ 2SJ200 ○ 低周波電力増幅用 単位: mm : VDSS = −180V 高耐圧ですã , 2SJ200 電気的特性 (Ta = 25℃) é …ç›® ゲ ド ー レ ト イ ン 記号 漏 ã , ³ 欧州理事会の指令 (EU 指令 2002/95/EC)」のことです。 2 2009-09-29 2SJ200 3 2009-09-29 2SJ200 スイッチング時間測定回路 応答波形 4 2009-09-29 2SJ200


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PDF 2SJ200 2SK1529
2SJ200

Abstract: 6C1B
Text: I TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 Unit in mm : V jjss " "180V (MIN.) HIGH POWER AMPLIFIER APPLICATION . High Breakdown Voltage . Complementary to 2SK1529 . Enhancement-Mode X5.9MAX 03.2 ±0.2 r . . High Forward Transfer Admittance : | Yfs | " 4.OS (TYP.) m , 2SJ200 id - VDS "5*0 -4.5 -10 Id - VGS V T \ \ · / 1 -4.0 CC)MMON SOURCE Tc = 2 , 2SJ200 S W TIME - Id SAFE OPERATING AREA SW TIME ( n t ) * SINGLE NONREPETITIVE PULSE Tc = 2 S r


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PDF 2SJ200 2SK1529 2SJ200 6C1B
TRANSISTOR bH-10

Abstract: marking BH-10 2SJ200 2SK1529 SC-65
Text: TOSHIBA 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 0 0 HIGH POWER AMPLIFIER APPLICATION • High Breakdown Voltage : Vj)gg=—180V • High Forward Transfer Admittance : |Yfs|=4.0S (Typ.) • Complementary to 2SK1529 MAXIMUM RATINGS (Ta=25°C) MARKING I iK Lot Number -TYPE n |â , Service CopyRight 2003 TOSHIBA 2SJ200 ID - vds ID - vos _I ,0 h -4.5 .0 / -4 y , CopyRight 2003 TOSHIBA 2SJ200 SW TIME - ID COMMON SOURCE RL = 20 Tc = 25Â


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PDF 2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10
toshiba j200

Abstract: 2SJ200 2SK1529 SC-65
Text: TOSHIBA 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 0 0 HIGH POWER AMPLIFIER APPLICATION • High Breakdown Voltage : Vj)gg=—180V • High Forward Transfer Admittance : |Yfs| = 4.0S (Typ.) • Complementary to 2SK1529 MAXIMUM RATINGS (Ta = 25°C) MARKING IM  , TOSHIBA Semiconductor Reliability Handbook. 1997-12-11 1/3 TOSHIBA 2SJ200 id - vds ID - vos _ J '1 â , 2SJ200 1000 500 300 100 50 30 SW TIME - Iß 10 COMMON SOURCE RL = 20 Tc = 25Â


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PDF 2SJ200 2SK1529 toshiba j200 2SJ200 SC-65
Not Available

Abstract: No abstract text available
Text: TOSHIBA TO S H IB A FIELD EFFECT TRANSISTOR SILICON P CHANN EL MOS TYPE 2SJ200 2SJ200 HIGH POWER AMPLIFIER APPLICATION Unit in mm 1 5 .9 M A X . · · · High Breakdown Voltage : V j)gg= -180V High Forward Transfer Admittance : |Yfs| = 4.0S (Typ.) Complementary to 2SK1529 RATING -180 ±20 -1 , o o k . 1997 - 12-11 1/3 TOSHIBA 2SJ200 id - vds id - ves , je c t t o c h a n g e w i t h o u t n o tic e . # 1997 - 12-11 2/3 TOSHIBA 2SJ200


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PDF 2SJ200 --180V 2SK1529
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SJ200 T O S H IB A FIELD EFFECT TR A N S IS TO R SILIC O N P C H A N N E L M O S TYPE 2SJ200 Unit in mm H IG H P O W E R A M P L IF IE R A P P L IC A T IO N • • • 1 5 .9 M A X . High Breakdown Voltage : V j)gg= —180V High Forward Transfer Admittance : |Yfs , H a n d b o o k . 1997 - 12-11 1/3 TOSHIBA 2SJ200 id - id vds - ves , 2SJ200 SW TIME - Id SAFE OPERATING AREA < Q Z tí D ^ SINGLE NONREPETITIVE PULSE


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PDF 2SJ200 2SK1529
Not Available

Abstract: No abstract text available
Text: TO SHIBA 2SJ200 Field Effect Transistor Silicon P Channel MOS Type (rc-MOS II) Audio Frequency Power Amplifier Application Features · High Breakdown Voltage - VDSS = -180V (Min.) · High Forward Transfer Admittance Y fs ' = 4 . O S (T y p .) · Complementary to 2SK1529 · Enhancement-Mode A bsolute , sensitive device. Please handle w ith care. TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 147 2SJ200 , . Discrete Semiconductors 2SJ200 SW TIME - Id SAFE OPERATING AREA S W TIME (ns) DRAIN C


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PDF 2SJ200 -180V 2SK1529
2SK2056

Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Text: Replacement Part Number Recommended Replacement 2SJ200 2SK532 2SK2232 2SJ92 2SJ200


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PDF 2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231 2SK2742 2SK2077 2SK2746 2SK1487 2SK2056 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
toshiba j200

Abstract: 2SJ200 2SK1529 SC-65
Text: TOSHIBA 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 0 0 HIGH POWER AMPLIFIER APPLICATION • High Breakdown Voltage : Vj)gg = —180 V • High Forward Transfer Admittance : |Yfs| = 4.0 S (Typ.) • Complementary to 2SK1529 MAXIMUM RATINGS (Ta = 25°C) MARKING Lot , TOSHIBA Semiconductor Reliability Handbook. 2000-01-31 1/3 TOSHIBA 2SJ200 id - vds ID - vos 5.0 , change without notice. 2000-01-31 2/3 TOSHIBA 2SJ200 1000 500 300 100 50 30 SW TIME - Id 10


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PDF 2SJ200 2SK1529 toshiba j200 2SJ200 SC-65
toshiba j200

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 2 SJ 2QQ HIGH POWER AMPLIFIER APPLICATION Unit in mm 1 5.9 MAX. MAXIMUM RATINGS (Ta = 25°C) + - SYMBOL RATING UNIT 2.0 + 0.3 CHARACTERISTIC 0.3 1 0 0.25 V Drain-Source Voltage -180 V d SS 5.45± 0.2 5.45± 0.2 , . 1997 12-11 1/3 - TO SH IB A 2SJ200 id - vos id - vgs DRAIN-SOURCE VOLTAGE V , without notice. 1997 12-11 2/3 - TO SH IB A 2SJ200 SW TIME - ID -3 0 I I I I I I I 11 ID


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PDF 2SJ200 toshiba j200
k1529

Abstract: 2sk1529 2sj200 2SK1529 2SJ200
Text: 2SK1529 NMOS 2SK1529 : mm : VDSS = 180 V : |Yfs| = 4.0 S () 2SJ200 (Ta = 25°C) VDSS 180 V VGSS ±20 V ID 10 A (Tc=25) 1: ( 1) 120 W Tch 150 PD Tstg -55150 150 (//) (/ ) ( ) () 2: K1529 () No. (Ta = 25°C) JEITA SC-65SC 2-16C1B


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PDF 2SK1529 2SJ200 K1529 SC-65SC 2-16C1B 2002/95/EC) k1529 2sk1529 2sj200 2SK1529 2SJ200
2SK405 equivalent

Abstract: 2sk405 2sj115 YTF541 2SJ200 equivalent YTAF630 2SK2382 equivalent YTF541 equivalent 2SK2232 equivalent 2SK941 equivalent YTF540
Text: product 2SK1529 2SK940 2SK941 2SK2232 2SK2231 2SK2201 2SJ200 2SJ304 Typ* No. YTF530 YTF531 YTF532


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PDF 10\Discontinued 2SK405 2SK422 2SK423 2SK442 2SK1251 2SK1252 2SJ115 2SJ123 YTF150 2SK405 equivalent 2sk405 2sj115 YTF541 2SJ200 equivalent YTAF630 2SK2382 equivalent YTF541 equivalent 2SK2232 equivalent 2SK941 equivalent YTF540
2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Text: 2SJ147. 145 2SJ200.


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PDF 1SV237 1SV239. 1SV257 TA4100F. YTS2222. YTS2222A. YTS2907. YTS2907A. YTS3904. YTS3906. 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
c 111 transistor

Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1529 HIGH POWER AMPLIFIER APPLICATION 15.9MAX Unit in mm 03.2±O.2 . High Breakdown Voltage : Vj)ss"180V (MIN.) . High Forward Transfer Admittance : | Yfs | "4.OS (TYP.) . Complementary to 2SJ200 . Enhancement-Mode 7 2 . 0±0.3 +0 . 3 1.0-0.25 MAXIMUM RATINGS (Ta-25°C) 5 . 45± 0 . 2 5.45±0.2 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation (Tcm25°C) Channel Temperature


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PDF 2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor
2S*1206

Abstract: 2S1201 2S1204 2SJ214LS 2SJ224 2SJ202 2SJ201 2SJ214 2SJ200 2D8-a
Text: - 24 - f Ir 1 * 3 s % te (Ta-25"C) s « tt S ffl m t* ü (V) Pd/Pch (W) Igss (max) (A) e (min) (s) « * K m * (V) a * (a) * * Vos (V) (min) (A) (max) (A) Vds (V) (min) (V) (max) (V) Vds (V) Id (A) Vds (V) Id (A) 2SJ200 scg LF PA MOS P E -180 DSS ±20 s -10 D 120 ±500n ±20 -0.8 -2.8 -10 -0.1 4 -10 -3 2SJ201 LF PA mos P E -200 DSS ±20 s -12 D , /-5Vmax ID=—6A, VGS=-10V 2SK1529 184 GDS 2SJ200 1500 230 0 -30 VDS(ON)=-2Vtyp/-5Vmax 2d=-8a. VCS


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PDF Ta-25 2SJ200 2SJ201 2SJ202 2SJ203 -200b 2SJ204 2SJ221 130ns, 490nstyp 2S*1206 2S1201 2S1204 2SJ214LS 2SJ224 2SJ201 2SJ214 2D8-a
2sk1529

Abstract: 2sk405 2sj115 2sc3281 YTFP450 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405 YTFP150
Text: TRANSISTORS Type No. N-CHANNEL 2SK405 2SK1529 2SK1530 GT20D101 P-CHANNEL 2SJ115 2SJ200 2SJ201 GT20D201 VCE S


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PDF YTFP150 YTFP151 YTFP152 YTFP153 YTFP250 YTFP251 YTFP252 YTFP253 YTFP450 YTFP451 2sk1529 2sk405 2sj115 2sc3281 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405
2N3904

Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150
Text: .91 2SJ200 . 94 - 276 - 1 ALPHABETICAL


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PDF 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2SJ201 2SK405 2N3904 Z-47 2SA1015 2SK1529 SM12 YTFP150
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