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Renesas Electronics Corporation
2SJ199-T2-AZ - Bulk (Alt: 2SJ199-T2-AZ) 2SJ199-T2-AZ ECAD Model
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Avnet 2SJ199-T2-AZ Bulk 0 1 Weeks 455 - - - $0.75862 $0.6875 Buy Now
Rochester Electronics 2SJ199-T2-AZ 3,614 1 $0.89 $0.89 $0.8 $0.73 $0.73 Buy Now
Renesas Electronics Corporation
2SJ199(0)-T1-AZ - Bulk (Alt: 2SJ199(0)-T1-AZ) 2SJ199(0)-T1-AZ ECAD Model
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Avnet 2SJ199(0)-T1-AZ Bulk 0 1 Weeks 863 - - - $0.41607 $0.3625 Buy Now
Rochester Electronics 2SJ199(0)-T1-AZ 14,000 1 $0.47 $0.47 $0.42 $0.38 $0.38 Buy Now

2SJ199 datasheet (9)

Part ECAD Model Manufacturer Description Type PDF
2SJ199 2SJ199 ECAD Model Kexin P-Channel MOSFET for Switching Original PDF
2SJ199 2SJ199 ECAD Model NEC Semiconductor Selection Guide 1995 Original PDF
2SJ199 2SJ199 ECAD Model NEC Semiconductor Selection Guide Original PDF
2SJ199 2SJ199 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ199 2SJ199 ECAD Model Others FET Data Book Scan PDF
2SJ199 2SJ199 ECAD Model NEC P-CHANNEL MOS FET FOR SWITCHING Scan PDF
2SJ199 2SJ199 ECAD Model NEC P-Channel MOS FET for Switching Scan PDF
2SJ199-T1 2SJ199-T1 ECAD Model NEC P-channel MOS FET Scan PDF
2SJ199-T2 2SJ199-T2 ECAD Model NEC P-channel MOS FET Scan PDF

2SJ199 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor 2sk

Abstract: 2SJ199 2SK1485 IEI-1209
Text: 2SJ199 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS (Unit : mm) 4.5 + 0.1 1. Source 2. Drain , diode.) The 2SJ199 , P-channel vertical type MOS FET, is a switching device which can be driven directly , Published November 1994 M Printed in Japan © NEC Corporation 1991 NEC 2SJ199 ELECTRICAL CHARACTERISTICS , Temperature-°C -3 -10 -30 -100 -300 -1000 VDS-Drain to Source Voltage-V NEC 2SJ199 TOTAL POWER DISSIPATION vs , Current—mA VGS-Cate to Source Voltage-V 3 NEC 2SJ199 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN


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PDF 2SJ199 2SJ199, transistor 2sk 2SJ199 2SK1485 IEI-1209
Not Available

Abstract: No abstract text available
Text: DATA SHEET NEC M O S FIELD EFFECT TRANSISTOR 2SJ199 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ199 , P-channel vertical ty p e MOS FE T, is a sw itching device w h ich can be driven d ire c , -I -1 .0 0.4 -2 .1 2SJ199 M IN . TYP. MAX -1 0 *1 0 -3 .0 U N IT HA mA TEST CO , Voltage -V 606 NEC 2SJ199 D R A I N C U R R E N T vs. D R A I N T O SOURCE VO LTA G E PT , -Drain Current mA Vg s -G at« to Source Voltage V 607 NEC 2SJ199 D R A IN T O S O U


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PDF 2SJ199 2SJ199, K1485 WS60-00
2SJ199

Abstract: 2SK1485
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ199 P-CHANIMEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS (Unit : mm) 1.5 ± 0 . 1 The 2SJ199 , P-channel vertical type MOS FET, is a switching device , N IT ma ma 2SJ199 TEST C O NDITION S V DS = - 100 V, V q s = 0 V GS = +20 v - V DS = 0 V d s , Source V oltag e-V 2 NEC 2SJ199 T O T A L P O W E R D I S S I P A T I O N vs. A M B IE N T , 2SJ199 D R A I N T O S O U R C E O N -S T A T E R E S IS T A N C E vs. D R A I N C U R R E N T D R


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PDF 2SJ199 2SJ199, 2SK1485 2SJ199
transistor sje 360

Abstract: wn 537 a transistor TC-7687B wn 537 a fet wn 537 transistor sje 2762 2SJ199 2SK1485 transistor W1B 08
Text: 5> • h MOS MOS Field Effect Transistor 2SJ199 P^-V^JU MOS FET 2SJ199 i±, P -fA-^^m^ MOS , 1990 NEC 2SJ199 (Ta —25 °C) m a fk if MIN. TYP. MAX. Â¥ fi K w 4 y L ^ Bf m Idss VDS = -100 V , -10 -30 -100 -300 fH>' v-xffflüfjt Vus (v) 1000 2 NEC 2SJ199 30 120 150 Ta CC ) 210 -0.5 , €¢ y-xffiWŒ Vos (V) 3 NEC 2SJ199 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE , / / -0.3 -0.6 -0.9 -1.2 y-X • KW>M'iŒ Vsd (V) -1.5 4 NEC 2SJ199 mmn&fu -í >7ts xigv-ar^ (IEI


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PDF 2SJ199 2SJ199 2SK1485 transistor sje 360 wn 537 a transistor TC-7687B wn 537 a fet wn 537 transistor sje 2762 transistor W1B 08
1999 - SC-59

Abstract: 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84
Text: / SC-62) 2SJ198 (2.5 / TO-92) 2SK1485 (1.2 / SC-62) 2SJ199 (2.5 / SC-62) , , 2SJ211 (30 / SC


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PDF 2SK1133 SC-59) 2SJ166 2SK1590 2SK1592 SC-62) 2SJ212 SC-59 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84
2SJ174

Abstract: 2SJ18 HA 1350S 2SJ173 2SJ172 2SJ171 2SJ170 mos-mcs 2sj196 2S119
Text: ±0.5 D 0.75 ±10« + 201 -10« -100 -1 -3 -10 -lm 0.4 0.9 -10 -0.5 2SJ199 NEC SW MOS P E -100 DSS , 2SJ198 220 0 -10 2 -4 -0. 5 ton=81ns, toff=450nstyp ID=-0. 5A, VDD=-25V 2SK1485 216A SDG 2SJ199


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PDF 2SJ170 2SJ171 2SJ172 2SJ173 2SJ174 M-30V 2SJ191 210nstyp 2SJ192 2SJ193 2SJ18 HA 1350S mos-mcs 2sj196 2S119
2SJ199

Abstract: No abstract text available
Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ199 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS(on)=2.5 2 +0.1 0.95-0.1 +0.1 1.9-0.1 MAX.@VGS=-10V,ID=-0.5A +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 RDS(on)=2.0 1 MAX.@VGS=-4.0V,ID=-0.5A 0.55 Has low on-state resistance +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply. 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum


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PDF 2SJ199 OT-23 -100V 2SJ199
1999 - X13769XJ2V0CD00

Abstract: 2sj165 SC-59 SC-84 2SK2541 SC-62 2SK2070 2SK1591 2SK2858 2sk2159
Text: -59) 2SK1484 (1.2 / TO-92) 2SK2110 (1.5 / SC-62) 2SJ198 (2.5 / TO-92) 2SK1485 (1.2 / SC-62) 2SJ199 (2.5


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PDF 2SK1132 2SJ165 2SK1133 SC-59) 2SJ166 2SK1590 2SK1592 SC-62) X13769XJ2V0CD00 2sj165 SC-59 SC-84 2SK2541 SC-62 2SK2070 2SK1591 2SK2858 2sk2159
1998 - 2SK2159

Abstract: 2SK680A 2SJ199 2SJ197 mmtf1n10
Text: 2SJ357 -4 -30 20 3 2SJ212 -4 -60 20 0.5 2SJ197 -4 -60 20 1.5 2SJ356 -4 -60 20 2 2SJ358 -4 -60 20 3 2SJ199


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PDF 2SK1959 2SK1960 2SK2053 2SK2159 2SK1583 2SK1585 2SK1587 2SK1588 2SK1584 2SK1586 2SK680A 2SJ199 2SJ197 mmtf1n10
Tc7736

Abstract: 2SJ199 2SK1485 IEI-1213 7736B
Text: = 10 V, lD = 0.5 A • Complementary to 2SJ199 QUALITY GRADE Standard Please refer to "Quality


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PDF 2SK1485 2SK1485, Tc7736 2SJ199 2SK1485 IEI-1213 7736B
2001 - 2SJ199

Abstract: 2SK1485 tc2349
Text: . (VGS = 10 V, ID = 0.5 A) · Complementary to 2SJ199. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to


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PDF 2SK1485 2SK1485, 2SJ199 2SK1485 tc2349
mos n fet e

Abstract: No abstract text available
Text: RDSton>2 = 0.8 i l M AX. @ V GS - 10 V, l D - 0.5 A Complementary to 2SJ199 Drain ID) 1. S o u r c e


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PDF 2SK1485 2SK1485, 2SJ199 mos n fet e
2SK1487

Abstract: LM 1495 2sk1477 1494z 2SK1470 2SK1480 2SK1486 2SK1467 2SK1466 1496-Z
Text: =25V 2SJ198 53D SDG 2SK1484 230 0 10 0.8 10 0. 5 ton=28ns, toff=435nstyp ID=0. SA. VDD=25V 2SJ199 216A


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PDF 2SK1465 2SK1466 2SK1467 2SK1468 2SK1469 2SK1470 2SK1487 100nstyp 2SK1488 140ns, 2SK1487 LM 1495 2sk1477 1494z 2SK1470 2SK1480 2SK1486 2SK1467 2SK1466 1496-Z
wn 537 a fet

Abstract: xw4f 2SJ199 2SK1485
Text: 5=ï—S? • h mos MOS Field Effect Transistor 2SK1485 n^-v^ju mos fet 2SK1485 ü, N -f MOS FETT", 5 V «SS IC (75 m ti (c i § ûagJ&gjî&Mfë Tto * MOS FET Ii ür >ffiftt^ffi < , X 4 ••/ f - > è «ilT v > £ £ ¿0, 7 ? f- ^ - ? ISiK" DC-DC 3 > / s- - ? a I t>"ïi if J±X^ -y flCfltto ¡ft « o 5 v «ss ic ir h mmMr- étto o-fg^-yffiKTto RDS(on) = 1.2 £2 MAX. @Vgs=4 V, ID = 0.5 A Rds 2SJ199 t =i >7° 'I S > ? <) ffit"llt„ nmm


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PDF 2SK1485 2SJ199 wn 537 a fet xw4f 2SK1485
2sj111

Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ123
Text: 2SJ192 2SJ193 2SJ194 2SJ195 2SJ196 2SJ197 2SJ198 2SJ199 2SJ200 -30 -30 -60 -60 -60 -100


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PDF 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ123
2SJ199

Abstract: 2SK1485 IEI-1213
Text: . MARK: S ou rce Dra in Gate NC Drain (D ) · Complementary to 2SJ199 QUALITY GRADE


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PDF 2SK1485 2SJ199 2SK1485 IEI-1213
triac tic 236

Abstract: SCR U 537 transistor su 312 MP25 transistor GA1L32 2SJ19 2SA1611 2sd22 triac 371 RD6.2
Text: MINI MOLD POWER MINI MOLD MP-3 POWER MINI MOLD POWER MINI MOLD 2SJ16 6 2SJ179 2SJ185 2SJ197 2SJ199


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PDF 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 transistor su 312 MP25 transistor GA1L32 2SJ19 2SA1611 2sd22 triac 371 RD6.2
2001 - 2SJ199

Abstract: 2SK1485
Text: . (VGS = 10 V, ID = 0.5 A) · Complementary to 2SJ199. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to


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PDF
1996 - transistor k2541

Abstract: K1398 J411 fet K1484 k1482 K679A k1272 k2541 transistor k1272 K1274
Text: 2SJ198 2SJ199 2SJ213 30 30 30 30 30 30 30 60 60 60 60 60 60 100 100 100 20 20 20


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PDF D11050EJ4V0PF00 transistor k2541 K1398 J411 fet K1484 k1482 K679A k1272 k2541 transistor k1272 K1274
1999 - uPD72002-11

Abstract: uPD16305 uPC1237 uPD65656 upc1701 2sb1099 2SD1392 uPD78F0841 UPD65625 uPG508
Text: 2SJ185 2SJ196 2SJ197 2SJ198 2SJ199 2SJ202 2SJ203 2SJ204 2SJ205 2SJ206 2SJ207 2SJ208 2SJ209 2SJ210


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PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 uPD65656 upc1701 2sb1099 2SD1392 uPD78F0841 UPD65625 uPG508
1999 - uPD16305

Abstract: uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC458 UPC2710 uPD65656 UPD65943
Text: 2SJ180 2SJ184 2SJ185 2SJ196 2SJ197 2SJ198 2SJ199 2SJ202 2SJ203 2SJ204 2SJ205 2SJ206 2SJ207 2SJ208


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PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC458 UPC2710 uPD65656 UPD65943
2001 - Not Available

Abstract: No abstract text available
Text: = 0.5 A) • Complementary to 2SJ199. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source


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PDF
2007 - MPA2733GR

Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
Text: 2.5 P 2SJ199 20 35 800 18 8.5 14 2300 45 8.5 14 2300 44 , 2SJ199 .19 2SJ621


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PDF O-263 O-252 mPA672T. mPA675T. mPA677TB. mPA678TB. mPA679TB. M8E0710J D18669JJ3V0SG D18669JJ3V0SG003 MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
2sk1060

Abstract: 2SK type transistor 2sk 2SK105 Datasheet transistor 2sk193 transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK739
Text: 1.0 0.25 ­5 ± ­ 100 (A) ± SC-62 (V) ± 2SJ199 0.5 MIN. ± ­


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PDF 2SK104 2SK105 2SK162 2SK163 2SK193 2SK195 2SK505 X10679EJCV0SG00 1996P 2sk1060 2SK type transistor 2sk 2SK105 Datasheet transistor 2sk193 transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK739
TXAL 228 B

Abstract: 2SAB12 K1589 2sc2554 k2499 2SD 1694 P015M 2482S K2134 diode zener nt 1243
Text: -0.5 to 2SJ179 2SJI97 2SJ199 2SJ205 2SJ206 2SJ207 2SJ208 2SJ212 2SJ213 2SJ365 2SJ356 2SK680A , 178 319 640 659 664 i 720 : 730 2SJ197 2SJ199 750 755 ! 792 797 802 807 812 817 837 842 ± 2


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PDF /PA17Q2 PA1710 TXAL 228 B 2SAB12 K1589 2sc2554 k2499 2SD 1694 P015M 2482S K2134 diode zener nt 1243
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