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2SJ195-TL-E - Bulk (Alt: 2SJ195-TL-E) 2SJ195-TL-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas 2SJ195-TL-E 0 1 Weeks 439 - - - $0.73076 $0.7037 More Info
Rochester Electronics 2SJ195-TL-E 2,100 1 $0.93 $0.93 $0.83 $0.75 $0.75 More Info

2SJ195 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
2sj195 2sj195 ECAD Model Sanyo Semiconductor P-channel MOS silicon FET, very high-speed switching application Original PDF
2SJ195 2SJ195 ECAD Model Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
2SJ195 2SJ195 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ195 2SJ195 ECAD Model Others FET Data Book Scan PDF
2SJ195 2SJ195 ECAD Model Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
2SJ195 2SJ195 ECAD Model Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
2SJ1950 2SJ1950 ECAD Model Hitachi Semiconductor Power Transistors Data Book Scan PDF

2SJ195 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SJ195

Abstract: ITR00076 ITR00077
Text: No.N 3 7 6 8 A 2SJ195 No. 3 7 6 8 A 51899 No.3768 2SJ195 P MOS Absolute Maximum Ratings / Ta=25 VDSS VGSS (DC) () ID IDP PD Tch unit - , /21093TS /4261JN 8-7546, 7921 No.3768-1/3 62797GI BX-0698 2SJ195 min tf VSD typ , =10µs D.C.1% VOUT G P.G 2SJ195 50 S ID - VDS -3.6V -3.0V -4 -2.8V -2.6V , 2SJ195 10µs 10 0µ s -10 7 ID 5 1m s 3 2 Operation in this area is limited


Original
PDF 2SJ195 20V50V --10V ITR00080 ITR00082 ITR00083 ITR00084 2SJ195 ITR00076 ITR00077
2002 - 2SJ195

Abstract: No abstract text available
Text: Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching , Low-voltage drive. unit:mm 2083B [ 2SJ195 ] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5 , 2.3 2.3 unit:mm 2092B [ 2SJ195 ] 2.3 0.5 0.5 2.3 2 2.5 1 0.6 0.8 0.85 , , TOKYO, 110-8534 JAPAN 40199TH (KT)/42693TH (KOTO) 8-7546, 7921 No.3768­1/4 2SJ195 Specifications , Circuit No.3768­2/4 2SJ195 No.3768­3/4 2SJ195 Specifications of any and all SANYO


Original
PDF EN3768A 2SJ195 2083B 2SJ195] 2092B 2SJ195
2SJ195

Abstract: No abstract text available
Text: 2SJ195 2083a 2092 A LD (L o w D rive) S eries V DSS = 1 0 0 V P Channel Power M OSFET 1)3768 F eatures · Low ON resistance. · Very high-speed switching. · Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage V gss Drain , Forward Transfer Admittance, I yfs I I Drain Current, 1D - A 73 O 2SJ195 Static Drain to , Dissipation, PD - W 2SJ195 1 6 9


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PDF 2SJ195 2083a 42693TH 2SJ195
1999 - 2SJ195

Abstract: EN3768 37684
Text: Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching , Low-voltage drive. unit:mm 2083B [ 2SJ195 ] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5 , 2.3 2.3 unit:mm 2092B [ 2SJ195 ] 2.3 0.5 0.5 2.3 2 2.5 1 0.6 0.8 0.85 , , TOKYO, 110-8534 JAPAN 40199TH (KT)/42693TH (KOTO) 8-7546, 7921 No.3768­1/4 2SJ195 Specifications , Switching Time Test Circuit No.3768­2/4 2SJ195 No.3768­3/4 2SJ195 Specifications of any and


Original
PDF EN3768A 2SJ195 2083B 2SJ195] 2092B 2SJ195 EN3768 37684
2092A

Abstract: 2SJ195
Text: Ordering number: EN3768A No.3768A i _ 2SJ195 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage VGss Drain Current(DC , ,7921 No.3768-1/3 2SJ195 -io ID - vDS -10 Drain to Source Voltage,VDS - V w I c ë S T3 < H T3 u m , , VDS — V ASO Drain Current,¡d — A Drain to Source Voltage,VDg - V No. 3768-2/3 2SJ195 ■No


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PDF EN3768A 2SJ195 -100V 2092A
2SJ270

Abstract: 2SJ26
Text: 2SJ289 2SJ194 2SJ195 2SJ275 2SJ276 2SJ277 2SJ231 CP PCP 0.5 ±15 2.0 TP 4.0 6.0 SNIP ±20 8.0 15 NMP


OCR Scan
PDF 2SJ286 2SJ193 2SJ289 2SJ194 2SJ195 2SJ275 2SJ276 2SJ27716 2SJ270 2SJ26
2SJ174

Abstract: 2SJ18 HA 1350S 2SJ173 2SJ172 2SJ171 2SJ170 mos-mcs 2sj196 2S119
Text: ±15 s -2 D 20 ±10« ±12 -0. lm -100 -1 -2 -10 -lm 1. 2 -10 -1 2SJ195 Hft SW MOS P E -100 DSS  , =160nstyp ID=-2A, VDD=-50V 346 GDS 2SJ195 200 0 -10 1.5 -4 -0. 5 ton=115ns, toff=550nstyp lD=-0. 5A. VDD


OCR Scan
PDF 2SJ170 2SJ171 2SJ172 2SJ173 2SJ174 M-30V 2SJ191 210nstyp 2SJ192 2SJ193 2SJ18 HA 1350S mos-mcs 2sj196 2S119
Not Available

Abstract: No abstract text available
Text: 2SJ195 2083A 2092A LD (L o w D rive) Series VD s = 1 0 0 V s P Channel Power MOSFET © 3768 F e a tu re s ■Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta=25°C Drain to Source Voltage V d ss Gate to Source Voltage V q ss Drain Current(DC) Id Drain Current(Pulse) Idp Allowable Power Dissipation Pd Tch Channel Temperature Tstg Storage Temperature E lectrical C h a ra c te ristics a t Ta = 25°C D-S Breakdown


OCR Scan
PDF 2SJ195 42693TH
K1412

Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Text: 2SJ191 2SJ192 2SJ193 2SJ194 2SJ195 TP : Voss (V) Absolute maximum ratings (Ta=-2 5 "C) Po' ' : Vos . . -


OCR Scan
PDF 17G7ti 2SK1467 2SK14691 2SK1470 --2SK1471 2SK1472 2SK1473 2SK1474 2SK1475 1800m K1412 K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
2SJ271

Abstract: 2SJ468 2SJ191 2SJ337 2SJ336 2SJ281 2SJ195 2SJ194 2SJ19 2SJ189
Text: 1.0 2SJ195 TP Ultrahigh-speed switching 100 ±15 4.0 30* 150 1 to 2 0.4 2.0 10 4.0 10 2.0 2SJ281 TP


OCR Scan
PDF 2SJI88 2SJ189 2SJ191 2SJ192 2SJ194 2SJ195 2SJ253 T0220 2SJ260 2SJ271 2SJ468 2SJ337 2SJ336 2SJ281 2SJ19
Not Available

Abstract: No abstract text available
Text: 100 ±15 2.0 20.0* 150 1.0 to 2.0 0.95 1.0 10 2.0 10 1.0 2SJ195


OCR Scan
PDF 2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD
2sk3436

Abstract: 2sc6093 2Sa1872 2SK3850 2SK1597 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: - 2SJ195 - 2SC4710LS - 2SD1878 - 2SJ225 NMP302 2SC4769 - 2SD1879


Original
PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK3850 2SK1597 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
J289

Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Text: 2SJ191/2SK1471 2SJ192/2SK1472 2SJ194/2SK1474 2SJ195 /2SK1475 2SJ281/2SK1920 2SJ362/ /2SK2046 /2SK2199


OCR Scan
PDF 3SK265 3SK266 3SK248 12/55m 2/80m 45/-/50m 130m/65m 21/90m MT931224TR J289 K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
2sj111

Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ123
Text: 2SJ192 2SJ193 2SJ194 2SJ195 2SJ196 2SJ197 2SJ198 2SJ199 2SJ200 -30 -30 -60 -60 -60 -100


Original
PDF 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ123
2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 2sc5267 TT2084 2sk3744
Text: - 2SC4636LS - 2SD1876 - 2SJ194 - 2SC4637LS - 2SD1877 - 2SJ195 -


Original
PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 2sc5267 TT2084 2sk3744
TO-32-070

Abstract: 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
Text: 2SJ191 2SJ192 2SJ194 2SJ195 2SJ281 2SK1468 2SK1469 2SK1471 2SK1472 2SK1474 2SK1475 2SK1920* 2SJ226 2SJ227


OCR Scan
PDF T0220ML TO-32-070 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
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