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2SJ188 DPAK/TO-252 2SJ188 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Karl Kruse GmbH & Co KG 2SJ188 5,000 - - - - - More Info

2SJ188 datasheet (9)

Part ECAD Model Manufacturer Description Type PDF
2SJ188 2SJ188 ECAD Model Sanyo Semiconductor Ultrahigh-speed switching Original PDF
2SJ188 2SJ188 ECAD Model Others FET Data Book Scan PDF
2SJ188 2SJ188 ECAD Model Others P-Channel Power MOSFET Scan PDF
2SJ188 2SJ188 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SJ188 2SJ188 ECAD Model Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
2SJ188 2SJ188 ECAD Model Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
2SJ188FA 2SJ188FA ECAD Model Others P-Channel Power MOSFET Scan PDF
2SJ188-FA 2SJ188-FA ECAD Model Others SMD, High Speed Power Switch, 30V 2A 20W, MOS-FET P-Channel enhanced Scan PDF
2SJ188-FA 2SJ188-FA ECAD Model Others SMD, High Speed Power Switch, 30V 2A 20W, MOS-FET P-Channel enhanced Scan PDF

2SJ188 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 2SJ188

Abstract: No abstract text available
Text: Ordering number:EN3761A P-Channel Silicon MOSFET 2SJ188 Ultrahigh-Speed Switching , Dimensions unit:mm 2083B [ 2SJ188 ] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5 1.6 , : Drain SANYO : TP unit:mm 2092B [ 2SJ188 ] 2.3 0.5 0.5 2.3 2 2.5 1 0.6 0.8 , 2SJ188 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions , No.3761­2/4 2SJ188 No.3761­3/4 2SJ188 Specifications of any and all SANYO products


Original
PDF EN3761A 2SJ188 2083B 2SJ188] 2092B 2SJ188
2SJ188

Abstract: 2092A
Text:  2SJ188 2083A 2092A LD (Low Drive) Series VDss = 30V P Channel Power MOSFET ©376IA Features - Low ON resistance • Very high-speed switching • Low-voltage drive Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage Vdss -30 V Gate to Source Voltage Vgss  , 42893TH/N1292MH (KOTO) 8-7308,7921 No.3761-1/3 ■7 2SJ188 ID - VDS -4 < i S , ,D2 2SJ188 7cH7D7b 0013022 54e! 25


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PDF 2SJ188 376IA 10/is, 100/iA, 13A21 2SJ188 2092A
2SJ188

Abstract: ITR00011 ITR00012
Text: No.N 3 7 6 1 A 2SJ188 No. 3 7 6 1 A 51899 No.3761 2SJ188 P MOS Absolute Maximum Ratings / Ta=25 VDSS VGSS (DC) () ID IDP PD Tch unit - , /21093TS /4261JN 8-7308, 7921 No.3761-1/3 62797GI BX-0698 2SJ188 min tf VSD typ , PW=10µs D.C.1% VOUT G P.G 2SJ188 50 S ID - VDS V -3.0V -2.8V -2.6V -1 , Ciss, Coss, Crss - VDS 3 ID=-1A , ID - A , RDS(on) - 2SJ188 3 Tc=25°C 1 5


Original
PDF 2SJ188 --15V --10V ITR00015 ITR00018 ITR00019 2SJ188 ITR00011 ITR00012
1999 - 2SJ188

Abstract: No abstract text available
Text: Ordering number:EN3761A P-Channel Silicon MOSFET 2SJ188 Ultrahigh-Speed Switching , Dimensions unit:mm 2083B [ 2SJ188 ] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5 1.6 , : Drain SANYO : TP unit:mm 2092B [ 2SJ188 ] 2.3 0.5 0.5 2.3 2 2.5 1 0.6 0.8 , 2SJ188 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Drain-to-Source Voltage , V Switching Time Test Circuit No.3761­2/4 2SJ188 No.3761­3/4 2SJ188


Original
PDF EN3761A 2SJ188 2083B 2SJ188] 2092B 2SJ188
2SJ469

Abstract: No abstract text available
Text: VDSS = 20V 30V, P-channel Absolute maximum ratings at Ta =25°C Type No. Package Electrical characteristics atTa =25 C VGS(o W 1 Voss m VG8S W W 0.3 1.0 0.5 · o m 0.25+ Po* mtntomax « 5 R D S ( « i) Rt>S(on) typ/max at V < 3 $=W ( ft) 2.2Z3.3 typ/max at V s s =1 0 V (Q) 1.5/2.2 0.5/0.75 1.5/2.2 0.31/0.44 ny typ (S) 0.35 1.0 0.4 2.0 Ciss typ (PF) 50 170 50 200 400 1000 Note 2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 CP ±15 PCP 120 1.0 to 2.0 3.5


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PDF 2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469
2SJ188

Abstract: No abstract text available
Text: 42893TH/N1292MH (KOTO) 8-7308,7921 No.376M/3 2SJ188 -5 -U ID - Vos < i JSt -3 s-» s -3.6V , Drain-tthSource Voltage, VDS ~ V No.3761-2/3 2SJ188 ■No products described or contained herein are intended


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PDF EN3761A 2SJ188
2SJ174

Abstract: 2SJ18 HA 1350S 2SJ173 2SJ172 2SJ171 2SJ170 mos-mcs 2sj196 2S119
Text: -0.5 2SJ188 SW MOS P E -30 DSS ±15 s -2 D 20 ±10« ±12 -0.1» -30 -1 -2 -10 -lm 1.2 -10 -1 , =37ns.toff=180nstyp ID=-1A, VDD=-15V 346 GDS 2SJ188 1000 220 -10 0. 17 -10 -2 ton=65ns, toff=290nstyp ID


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PDF 2SJ170 2SJ171 2SJ172 2SJ173 2SJ174 M-30V 2SJ191 210nstyp 2SJ192 2SJ193 2SJ18 HA 1350S mos-mcs 2sj196 2S119
sb30-03p

Abstract: to-40-070
Text: ratings (Ta = 25°C) Type No. 2SJ188 2SJ189 2SJ191 2SJ192 2SJ362 FX203 FX205 FX856 (MGS + SBD) " Tc - 25


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PDF FX507 FX508 FP211 FP216 TS6472 2SD1815 250mm2 750mm2 sb30-03p to-40-070
2SK1471

Abstract: 2SK2153 2SB1205 2SK1474 2SK147 CI 7001 2SK1468 2SJ336 2SJ188 FX209
Text: 2 0 3 30 ±18 2 1 - 2 2 1 200/300 300/450 400 110 2SJ188 FX 2 0 4 30 ±18 4 1 - 2 4 2 85/120


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PDF 900mm2XO SB07-03P 2SK1467 SB05-05P f-10pF 2SJ190 SB05-09 2SK1470 2SK1471 2SK2153 2SB1205 2SK1474 2SK147 CI 7001 2SK1468 2SJ336 2SJ188 FX209
Not Available

Abstract: No abstract text available
Text: 150 1.0 to 2.0 07 0.5 10 1.5 10 2SJ188 TP Very high-speed switch 30 Â


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PDF 2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD
SJ18

Abstract: No abstract text available
Text: 2SJ188 * 2083A 2092A LD (L o w D rive) S eries V D S S= 3 0 V P Channel Power M O SFET © 3 7 6 1A = -_ _ F e a tu re s Low ON resistance Very high-speed sw itching Low-voltage drive A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage V d ss G ate to Source V oltage V g ss D rain C u rre n t (DC) Id D rain C u rren t (Pulse) Idp Allowable Pow er D issipation Pd C hannel T em perature Tch S torage T em perature Tstg E le c tr ic a l C h a r a c te r is tic


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PDF 2SJ188 42893TH/N1292M SJ18
K1412

Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Text: a m i m e l i (N-channel) (P-channel) Type P ackag e' : 2SJ187 2SJ188 2SJ189 2SJ190


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PDF 17G7ti 2SK1467 2SK14691 2SK1470 --2SK1471 2SK1472 2SK1473 2SK1474 2SK1475 1800m K1412 K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
2sj111

Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ123
Text: * 0* 0* 0* 0* 0* 0* 0* 0* 0* 0* 0* 0* 0* 0* -10* 2SJ188 2SJ189 2SJ190 2SJ191


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PDF 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ123
2sk3436

Abstract: 2sc6093 2Sa1872 2SK3850 2SK1597 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 2SD896 - 2SC4572 - 2SD1395 - 2SJ187 - 2SC4600 - 2SD1459 - 2SJ188 -


Original
PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK3850 2SK1597 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
CI 7001

Abstract: 2SD1203 SS170 2sb1205 2SD180
Text: 65/90 85/120 400 95 2SK2153 200/300 300/450 400 110 2SJ188 85/120 120/170 400 90 2SK1468 320/420 470


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PDF FX855 FX851 T940120TR CI 7001 2SD1203 SS170 2sb1205 2SD180
J289

Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Text: (KG) 2S. 289 ( F)/2SK1728(KH) / 2SK21671KK) /2SK2168(KL) /2SK2260(K0) 2SJ188 /2SK1468 2SJ189/2SK1469


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PDF 3SK265 3SK266 3SK248 12/55m 2/80m 45/-/50m 130m/65m 21/90m MT931224TR J289 K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 2sc5267 TT2084 2sk3744
Text: 2SD1395 - 2SJ187 - 2SC4600 - 2SD1459 - 2SJ188 - 2SC4630LS - 2SD1651C


Original
PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 2sc5267 TT2084 2sk3744
TO-32-070

Abstract: 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
Text: 2SK1724 2SK1726 2SK1728 2SJ225 2SJ228 2SJ231 2SK1725 2SK1727 2SK1729 2SK1730 2SK1733 2SK1736 2SJ188 2SJ189


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PDF T0220ML TO-32-070 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
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