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2SD669 equivalent Datasheets Context Search

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2005 - 2sd669

Abstract: 2SD669AL
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669 /A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 TO-126 1 TO-251 *Pb-free plating product number: 2SD669 /AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD669 -x-T60-A-K 2SD669L-x-T60-A-K 2SD669A-x-T60-A-K 2SD669AL-x-T60-A-K 2SD669 -x-TM3-A-T 2SD669L-x-TM3-A-T 2SD669A-x-TM3-A-T 2SD669AL-x-TM3-A-T Note: x: Rank , www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-005,D 2SD669 /A PARAMETER


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PDF 2SD669/A O-126 O-251 2SD669/AL 2SD669-x-T60-A-K 2SD669L-x-T60-A-K 2SD669A-x-T60-A-K 2SD669AL-x-T60-A-K 2SD669-x-TM3-A-T 2SD669L-x-TM3-A-T 2sd669 2SD669AL
2004 - 2sd669a

Abstract: 2sd669
Text: UTC 2SD669 /A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR , Collector-base voltage Collector-emitter voltage 2SD669 2SD669A Emitter-base voltage Collector current Collector , voltage Collector to emitter breakdown voltage 2SD669 2SD669A Emitter to base breakdown voltage Collector cut-off current 2SD669 DC current gain 2SD669A Collector-emitter saturation voltage Base-emitter voltage , UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-036,A UTC 2SD669 /A Note: Pulse test. NPN EPITAXIAL


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PDF 2SD669/A 2SB649/A OT-89 2SD669 2SD669A QW-R208-036
1998 - 2sd669

Abstract: 2sd669 hitachi Hitachi DSA00279 2sd669a
Text: 2SD669 , 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669 , = 25°C. Tj Tstg 1 2SD669 180 120 5 1.5 3 1 20 150 ­55 to +150 2SD669A 180 160 5 1.5 3 1 20 150 ­55 to +150 Unit V V V A A W W °C °C 2 2SD669 , 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter


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PDF 2SD669, 2SD669A 2SB649/A O-126 2SD669 2SD669A 2sd669 hitachi Hitachi DSA00279
2SD669

Abstract: transistor 2sd669
Text: UTC 2SD669 /A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR , Collector-base voltage Collector-emitter voltage 2SD669 2SD669A Emitter-base voltage Collector current Collector , 2SD669 2SD669A Emitter to base breakdown voltage Collector cut-off current 2SD669 DC current gain 2SD669A , 2SD669 /A PARAMETER Current gain bandwidth product Output capacitance Note: Pulse test. NPN EPITAXIAL , TYP 140 14 MAX UNIT MHz pF CLASSIFICATION OF hFE1 RANK RANGE ( 2SD669 ) RANGE (2SD669A) B


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PDF 2SD669/A 2SB649/A 2SD669 2SD669A QW-R201-049 transistor 2sd669
2008 - 2SD669Al

Abstract: 2SD669A 2SD669 transistor 2sd669 2SD669-X-AA3-R 2SD669L 2SD669AG 2sd669ag-x-aa3-r transistor 160v 1.5a npn 1.5A NPN power transistor TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669 /A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL , Lead-free: 2SD669L/2SD669AL Halogen-free: 2SD669G/2SD669AG ORDERING INFORMATION Normal 2SD669 -x-AA3-R 2SD669 -x-AB3-R 2SD669 -x-T60-K 2SD669 -x-T6C-K 2SD669 -x-T92-B 2SD669 -x-T92-K 2SD669 -x-T9N-B 2SD669 -x-T9N-K 2SD669 -x-T9N-R 2SD669 -x-TM3-T 2SD669 -x-TN3-R 2SD669 -x-TN3-T Ordering Number Lead Free Plating , of 5 QW-R204-005,F 2SD669 /A NPN SILICON TRANSISTOR ORDERING INFORMATION(Cont.) Normal


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PDF 2SD669/A 2SB649/A 2SD669L/2SD669AL 2SD669G/2SD669AG 2SD669-x-AA3-R 2SD669-x-AB3-R 2SD669-x-T60-K 2SD669-x-T6C-K 2SD669-x-T92-B 2SD669-x-T92-K 2SD669Al 2SD669A 2SD669 transistor 2sd669 2SD669-X-AA3-R 2SD669L 2SD669AG 2sd669ag-x-aa3-r transistor 160v 1.5a npn 1.5A NPN power transistor TO-92
2005 - 2SD669A

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669 /A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL , Normal Lead Free Plating 2SD669 -x-AA3-R 2SD669L-x-AA3-R 2SD669 -x-AB3-R 2SD669L-x-AB3-R 2SD669 -x-T60-K 2SD669L-x-T60-K 2SD669 -x-T6C-K 2SD669L-x-T6C-K 2SD669 -x-T92-B 2SD669L-x-T92-B 2SD669 -x-T92-K 2SD669L-x-T92-K 2SD669 -x-T9N-B 2SD669L-x-T9N-B 2SD669 -x-T9N-K 2SD669L-x-T9N-K 2SD669 -x-T9N-R 2SD669L-x-T9N-R 2SD669 -x-TM3-T 2SD669L-x-TM3-T 2SD669 -x-TN3-R 2SD669L-x-TN3-R 2SD669 -x-TN3-T 2SD669L-x-TN3-T www.unisonic.com.tw


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PDF 2SD669/A OT-223 OT-89 2SB649/A O-92NL O-126C O-126 O-251 O-252 2SD669L/2SD669AL 2SD669A
2004 - 2sd669

Abstract: 2sd669a 2sb649a
Text: UTC 2SD669 /A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR , Collector-base voltage Collector-emitter voltage 2SD669 2SD669A Emitter-base voltage Collector current Collector , 2SD669 2SD669A Emitter to base breakdown voltage Collector cut-off current DC current gain , TECHNOLOGIES CO. LTD 1 QW-R211-011,B UTC 2SD669 /A Note: Pulse test. NPN EPITAXIAL SILICON , PERFORMANCE UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R211-011,B UTC 2SD669 /A NPN EPITAXIAL


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PDF 2SD669/A 2SB649/A O-92NL 2SD669 2SD669A QW-R211-011 2sb649a
2004 - 2SD669

Abstract: No abstract text available
Text: UTC 2SD669 /A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR , Collector-base voltage Collector-emitter voltage 2SD669 2SD669A Emitter-base voltage Collector current Collector , 2SD669 2SD669A Emitter to base breakdown voltage Collector cut-off current DC current gain , CO. LTD 1 QW-R217-001,B UTC 2SD669 /A PARAMETER Current gain bandwidth product Output , TECHNOLOGIES CO. LTD 2 QW-R217-001,B UTC 2SD669 /A NPN EPITAXIAL SILICON TRANSISTOR UTC


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PDF 2SD669/A 2SB649/A O-126C 2SD669 2SD669A QW-R217-001
2000 - 2SD669

Abstract: 2SD669A ALL 2SD669A DSA003644
Text: 2SD669 , 2SD669A Silicon NPN Epitaxial ADE-208-899 (Z) 1st. Edition Sep. 2000 Application , . Emitter 2. Collector 3. Base 2 3 2SD669 , 2SD669A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD669 2SD669A Unit Collector to base voltage VCBO 180 180 , Note: 2 1. Value at TC = 25°C. 2SD669 , 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 2SD669A Item Symbol Min Typ Max Min Typ Max Unit Test conditions


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PDF 2SD669, 2SD669A ADE-208-899 2SB649/A O-126 2SD669 2SD669 2SD669A ALL 2SD669A DSA003644
2009 - 2sd669

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD669 (A) 2SD669 (A)-B 2SD669 (A)-C 2SD669 -D NPN Silicon Plastic-Encapsulate Transistor A N , K OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (IC=10mAdc, IB =0) 2SD669 , Current Gain (IC=150mAdc, V CE=5Vdc) 2SD669 2SD669A hFE-2 VCE(sat) VBE fT Cob DC , pF L M N Q CLASSIFICATION OF HFE Rank Range 2SD669 2SD669A B 60-120 60-120 C 100-200


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PDF 2SD669 2SD669-D -55OC
Not Available

Abstract: No abstract text available
Text: 2SD669 ,2SD669A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB649/A Outline 2SD669 , 2SD669A Absolute Maximum Ratings (Ta = 25 °C) Ratings , Collector peak current Collector power dissipation Symbol ^G B O 2SD669 180 120 5 1.5 3 1 20 150 - , at T c = 25°C. Tj Tstg 2 HITACHI 2SD669 , 2SD669A Electrical Characteristics (Ta = 25 °C) 2SD669 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base


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PDF 2SD669 2SD669A 2SB649/A 2SD669, 2SD669
2004 - QW-R204-005

Abstract: No abstract text available
Text: UTC 2SD669 /A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR , Collector-base voltage Collector-emitter voltage 2SD669 2SD669A Emitter-base voltage Collector current Collector , 2SD669 2SD669A Emitter to base breakdown voltage Collector cut-off current DC current gain , CO. LTD 1 QW-R204-005,B UTC 2SD669 /A PARAMETER Current gain bandwidth product Output , TECHNOLOGIES CO. LTD 2 QW-R204-005,B UTC 2SD669 /A NPN EPITAXIAL SILICON TRANSISTOR UTC


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PDF 2SD669/A 2SB649/A O-126 2SD669 2SD669A QW-R204-005
2009 - 2SD669AD

Abstract: 2SD669A
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD669 (A) 2SD669 (A)-B 2SD669 (A)-C 2SD669 -D NPN Silicon Plastic-Encapsulate Transistor A N , Collector-Emitter Breakdown Voltage (IC=10mAdc, IB =0) 2SD669 2SD669A D 120 160 - Vdc Vdc E , uAdc G ON CHARACTERISTICS hFE-1 DC Current Gain (IC=150mAdc, V CE=5Vdc) 2SD669 2SD669A , Rank Range 2SD669 2SD669A B 60-120 60-120 C 100-200 100-200 D 160-320 0.291 0.417 0.602 4 0.118


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PDF 2SD669 2SD669-D -55OC 2SD669AD 2SD669A
2009 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD669 (A) 2SD669 (A)-B 2SD669 (A)-C 2SD669 -D NPN Silicon Plastic-Encapsulate Transistor A K , ) 2SD669 2SD669A Collector-Base Breakdown Voltage (IC=1mAdc, IE =0) Emitter-Base Breakdown Voltage (IE , Current Gain (IC=150mAdc, V CE=5Vdc) 2SD669 2SD669A 60 60 30 -320 200 -1.0 1.5 -Vdc Vdc MHz pF , - 140(TYP) 14(TYP) CLASSIFICATION OF HFE Rank Range 2SD669 2SD669A B


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PDF 2SD669 2SD669-D -55OC 10mAdc, 2SD669A
2009 - 2SD669AL

Abstract: 2SD669A ta7250 2SD669 transistor 2sd669 1.5A NPN power transistor TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669 /A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL , © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-005,H 2SD669 /A NPN SILICON TRANSISTOR , Collector-Base Voltage VCBO 180 V 2SD669 120 Collector-Emitter Voltage VCEO V 2SD669A 160 Emitter-Base , Voltage Collector to Emitter Breakdown 2SD669 Voltage 2SD669A Emitter to Base Breakdown Voltage , 2 of 4 QW-R204-005,H 2SD669 /A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS 5


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PDF 2SD669/A OT-89 OT-223 2SB649/A O-251 O-252 O-92NL O-126 O-126C 2SD669L/2SD669AL 2SD669AL 2SD669A ta7250 2SD669 transistor 2sd669 1.5A NPN power transistor TO-92
2005 - 2SD669A

Abstract: npn 160V 1.5A to-126 TO92NL 2SD669AL 2sd669l transistor 2sd669 2SD669 TO-92NL
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669 /A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL , Normal Lead Free Plating 2SD669 -x-AA3-R 2SD669L-x-AA3-R 2SD669 -x-AB3-R 2SD669L-x-AB3-R 2SD669 -x-T60-K 2SD669L-x-T60-K 2SD669 -x-T6C-R 2SD669L-x-T6C-R 2SD669 -x-T92-B 2SD669L-x-T92-B 2SD669 -x-T92-K 2SD669L-x-T92-K 2SD669 -x-T9N-B 2SD669L-x-T9N-B 2SD669 -x-T9N-K 2SD669L-x-T9N-K 2SD669 -x-T9N-R 2SD669L-x-T9N-R 2SD669 -x-TM3-T 2SD669L-x-TM3-T 2SD669 -x-TN3-R 2SD669L-x-TN3-R 2SD669 -x-TN3-T 2SD669L-x-TN3-T www.unisonic.com.tw


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PDF 2SD669/A OT-223 OT-89 2SB649/A O-92NL O-126C O-126 O-251 O-252 2SD669L/2SD669AL 2SD669A npn 160V 1.5A to-126 TO92NL 2SD669AL 2sd669l transistor 2sd669 2SD669 TO-92NL
2012 - T6C transistor

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669 /A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS 1 , Unisonic Technologies Co., Ltd 1 of 4 QW-R204-005,J 2SD669 /A PARAMETER Collector-Base Voltage , ) RATINGS UNIT 180 V 2SD669 120 Collector-Emitter Voltage VCEO V 2SD669A 160 Emitter-Base Voltage VEBO 5 V , Collector to Base Breakdown Voltage Collector to Emitter Breakdown 2SD669 Voltage 2SD669A Emitter to Base , www.unisonic.com.tw 2 of 4 QW-R204-005,J 2SD669 /A TYPICAL CHARACTERISTICS 30 0 DC Current Transfer Ratio


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PDF 2SD669/A OT-223 OT-89 2SB649/A O-251 O-252 O-92NL O-126 O-126C 2SD669xL-x-AA3-R T6C transistor
2015 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669 /A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL , , Blank: 120V 1 of 6 QW-R204-005. Q 2SD669 /A  NPN SILICON TRANSISTOR MARKING INFORMATION PACKAGE MARKING 2SD669 2SD669A SOT-223 SOT-89 SOT-23 D66AG 1 TO-126 TO-126C TO , QW-R204-005. Q 2SD669 /A  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C unless otherwise specified) PARAMETER Collector-Base Voltage 2SD669 Collector-Emitter Voltage 2SD669A


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PDF 2SD669/A 2SB649/A 2SD669xG-x-AA3-R 2SD669xG-x-AB3-R 2SD669xG-x-AE3-R 2SD669xG-x-AE3-6-R 2SD669xL-x-T60-K 2SD669xG-x-T60-K 2SD669xL-x-T6C-K 2SD669xG-x-T6C-K
2009 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD669 (A) 2SD669 (A)-B 2SD669 (A)-C 2SD669 -D NPN Silicon Plastic-Encapsulate Transistor A N , Voltage (IC=10mAdc, IB =0) 2SD669 2SD669A D 120 160 - Vdc Vdc E B M V(BR)CBO , ON CHARACTERISTICS hFE-1 DC Current Gain (IC=150mAdc, V CE=5Vdc) 2SD669 2SD669A hFE-2 VCE , Rank Range 2SD669 2SD669A B 60-120 60-120 C 100-200 100-200 D 160-320 Notes: 1. High Temperature


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PDF 2SD669 2SD669-D -55OC 10mAdc,
1999 - 2SD669A

Abstract: 2SD669 Hitachi DSA00382
Text: 2SD669 , 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary , 2SD669 , 2SD669A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD669 2SD669A , °C. 2SD669 , 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 2SD669A Item Symbol Min , Cob Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B C D 2SD669 60 to 120 100 to 200 160 to 320 2SD669A 60 to 120 100 to 200 - Maximum


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PDF 2SD669, 2SD669A 2SB649/A O-126 2SD669 2SD669A 2SD669 Hitachi DSA00382
2008 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669 /A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL , of 4 QW-R204-005,G 2SD669 /A NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL VCBO Collector-Base Voltage 2SD669 2SD669A , Breakdown 2SD669 Voltage 2SD669A Emitter to Base Breakdown Voltage Collector Cut-off Current DC Current , 2SD669 /A NPN SILICON TRANSISTOR 25 Collector to emitter saturation voltage, VCE(SAT) (V) DC


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PDF 2SD669/A OT-89 OT-223 2SB649/A O-92NL O-126 O-126C O-251 O-252 2SD669L/2SD669AL
2011 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669 /A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL , © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-005,I 2SD669 /A NPN SILICON TRANSISTOR , VCBO RATINGS UNIT 180 V 2SD669 120 Collector-Emitter Voltage VCEO V 2SD669A 160 , Breakdown 2SD669 Voltage 2SD669A Emitter to Base Breakdown Voltage Collector Cut-off Current DC Current , 2SD669 /A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS 5°C Collector to emitter saturation


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PDF 2SD669/A OT-89 OT-223 2SB649/A O-251 O-252 O-92NL O-126 O-126C 2SD669x-x-AA3-R
1998 - 2SD669

Abstract: 2sd669 hitachi Hitachi DSA00164 2SD669A
Text: 2SD669 , 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary , 2SD669 , 2SD669A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD669 2SD669A , °C. 2SD669 , 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 2SD669A Item Symbol Min , hFE1* 1 Cob Notes: 1. The 2SD669 and 2SD669A are grouped by hFE1 as follows. 2. Pulse test. B C D 2SD669 60 to 120 100 to 200 160 to 320 2SD669A 60 to 120 100 to 200


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PDF 2SD669, 2SD669A 2SB649/A O-126 2SD669 D-85622 2SD669 2sd669 hitachi Hitachi DSA00164 2SD669A
2013 - Not Available

Abstract: No abstract text available
Text: UNISO TE NIC CHNO G SCO LTD LO IE ., 2SD669 /A NPN SILICON TRANSISTOR BI POLAR POWER GEN , www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-005,K 2SD669 /A ̈ NPN , SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V 2SD669 120 Collector-Emitter Voltage VCEO , Collector to Base Breakdown Voltage Collector to Emitter Breakdown 2SD669 Voltage 2SD669A Emitter to , ., LTD www.unisonic.com.tw C 100-200 D 160-320 2 of 4 QW-R204-005,K 2SD669 /A ̈ NPN


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PDF 2SD669/A 2SB649/A 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R 2SD669xL-x-AB3-R 2SD669xG-x-AB3-R 2SD669xL-x-T60-K 2SD669xG-x-T60-K 2SD669xL-x-T6C-K 2SD669xG-x-T6C-K
2SD669 hitachi

Abstract: No abstract text available
Text: 2SD669 , 2SD669A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO -126 MOD Ì 1 Emitter 2 Collector 3 Base 2SD669 ,2SD669A , Symbol ^C B O 2SD669 180 120 5 1.5 3 1 20 150 -5 5 to +150 2SD669A 180 160 5 1.5 3 1 20 150 -5 5 , Storage tem perature Note: 1. Value at T c = 2 5 °C . Tj Tstg °c °C o HITACHI 2SD669 ,2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 Item Collector to base breakdown voltage C


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PDF 2SD669, 2SD669A 2SB649/A 2SD669 2SD669 2SD669 hitachi
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