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2SD313E ON Semiconductor Rochester Electronics 1,580 - -
D/MS3106E14S-2S(D313) DDK Ltd Electroshield 327 - -
DCA3101E22-22S(D313) DDK Ltd Electroshield 72 $42.62 $27.07
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2SD313 datasheet (35)

Part Manufacturer Description Type PDF
2SD313 Anqiu Huichuan Electronic Transistor for Color TV Original PDF
2SD313 Transys Electronics Plastic-Encapsulate Transistors Original PDF
2SD313 USHA NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 Original PDF
2SD313 Various Russian Datasheets Transistor Original PDF
2SD313 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
2SD313 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
2SD313 Micro Electronics Semiconductor Device Data Book Scan PDF
2SD313 Mospec POWER TRANSISTORS(3A,60V,30W) Scan PDF
2SD313 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2SD313 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SD313 Others Shortform Transistor PDF Datasheet Scan PDF
2SD313 Others Japanese Transistor Cross References (2S) Scan PDF
2SD313 Others Cross Reference Datasheet Scan PDF
2SD313 Others Semiconductor Master Cross Reference Guide Scan PDF
2SD313 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD313 Others Transistor Substitution Data Book 1993 Scan PDF
2SD313 Others Shortform Transistor Datasheet Guide Scan PDF
2SD313 Others The Japanese Transistor Manual 1981 Scan PDF
2SD313 Others Scan PDF
2SD313 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF

2SD313 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
toshiba 2sd425

Abstract: nec 2sd287 2SC792 2sd 311 2SD427 2S0880 2SD1391 2SD313 2SD287C 2SD867
Text: V - - 2SD313 2SD313 2SD880 2SD880 2SD867 2SD880 ¿0UÖÖU 2SD1135 2SD1135 2SD1135 2SD1135 , · a s = * fé T fé T S± iS fé = T ;¥ 2SD313 ^ h 2SD867 2SC792 2SD820 2SD820 2SD867 2SD818 2SD526 , 2S D 321 2S D 322 2 S D 323 2SD 324 2SD 325 ^ fé fé fé fé T T T T m 2SD313 2SD313 2SD313 2SD313


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PDF 2SD287 2SD287C 2SD288 2SD289 2SD425 2SD425 2SD313 2SD313 2SD880 toshiba 2sd425 nec 2sd287 2SC792 2sd 311 2SD427 2S0880 2SD1391 2SD867
2S0880

Abstract: 2SD427 SD 338 2Sd428 2sd880 2sc790 2SC2320 2SD313 2SD2023 2SC1815
Text: –¡ - A ROHM 2S0 330 ' = m 2SC790 2SD795 2SD1135 2SD389 2SD2023 2SD 33! ✓ E. m 2SD313 2SC79Û(LB , 2S0 340 V-— 2SD425 2SD 341 - B ÍZ 2SD867 2SD 342 / V—— 2SD313 2SD880 2SD568 2SD1135 2SD2023 Í OU 040 j V —— 2SD313 2SD88Q 9<;m 1 ^ 2SD2023 2SD 344 ^ V—— 2SD313 2SD880 2SD568 2SD1135 2SD2023 2SD 345 V- 2SD313 2SD880 2SD1135 2SD2023 2S0 346 -' 'J- 2SD526 , 2SD313 2SD880 2SD568 2SD1135 2SD1266 2SD2023


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PDF 2SC790 2SD795 2SD1135 2SD389 2SD2023 2SD313 2SC79Ã 2SD390 2S0880 2SD427 SD 338 2Sd428 2sd880 2SC2320 2SD2023 2SC1815
2SD 388 A

Abstract: 2Sd427 2SD313 2SC2320 2SD650 2SC2073 2SD867 2sd1138 2SC2204 2SD820
Text: - 213 - m £ Type No. 2SD365A 2SD366 2SD366A 2SD367 2SD368 2SD369 ^ 2SD370 2SD371 2SD372 2SD373 2SD373A 2SD374 2SD375 2SD376 ^ 2SD377 2SD378 2SD379 ^ 2SD 380 2SD 381 ^ / fé fé fé H tt Manuf. s = SANYO 2SD313 2SD313 2SD313 æ M TOSHIBA 2SD526 2SD880 2SD526 2 a NEC 2SÜ288 m 0 ÍL HITACHI 2SÜ1135 2SD1135 m ± il FUJITSU tö T MATSUSHITA 2SD1266A 2SD1266 2SDÎ266A h , ¥ 2SD386 2SC2073 2SC2073 2SC2073 2SC2073 2SD427 2SD313 2SD313 2SD313 2SC2274 2SD526 2SD526 2SD526


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PDF 2SD365A 2SD366 2SD366A 2SD367 2SD368 2SD369 2SD370 2SD371 2SD372 2SD373 2SD 388 A 2Sd427 2SD313 2SC2320 2SD650 2SC2073 2SD867 2sd1138 2SC2204 2SD820
Sanyo D313

Abstract: transistor D313 TRANSISTOR B507 2SD313 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier
Text: stage of 2SB507 / 2SD313. High input impedance of 100 kohm by bootstrap circiut. This input impedance can , .2SB507,2SB508 and 2SD313 ,2SD314 are complementary pairs respectively. .These are designed for the output stage of 15W to 25W AF power amplifier. .2SB507 and 2SB508, or 2SD313 and 2SD314, differ from their care , – ) 0.1 (-) 5 (")1 unit mA mA mA V 320* /Vcb=(-)10V,\ 2SB507,508 'f=lMHz I 2SD313 , 314 Gain , / 2SD313 ,314 are classified by 1A hFE as follows: VcE(sat) IC=(-)2A,IB=(-)0.2A VBE IC=(-)1A,Vce=(-)2V 8


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PDF 2SB507, 2SB507 2SB508 2SD313 2SD314 2SB508, 2SD314, Sanyo D313 transistor D313 TRANSISTOR B507 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier
2005 - 2SD313

Abstract: transistor 2sd313 2sd313 equivalent 2SD313L 2SD313L-x-TA3-T 2SD313 F 2sd313 applications
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. 1 TO-220 *Pb-free plating product number: 2SD313L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD313-x-TA3-T 2SD313L-x-TA3-T Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube 2SD313L-x-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2


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PDF 2SD313 2SD313 O-220 2SD313L 2SD313-x-TA3-T 2SD313L-x-TA3-T QW-R203-001 transistor 2sd313 2sd313 equivalent 2SD313L 2SD313L-x-TA3-T 2SD313 F 2sd313 applications
2011 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd , QW-R203-001,D 2SD313 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS


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PDF 2SD313 2SD313 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T O-220 O-220F QW-R203-001
2SD313

Abstract: 2SB507 to220aa 2SD314 2sb507 sanyo TRANSISTOR 2SB507 transistor 2sd313 280314 2SD31 2SB508
Text: SAN VO TEN FOUR LTD. 1535 Alps Road WAYNE, NEW JERSEY 07470 fWU 5v>«?7 TWX 7'?0 •">PS.O?03 SANYO SEMICONDUCTOR 2SB507.508 2SD313 ,314 2SB507,508_ Planar Type Silicon Transistor 2SD31 3,314 For AF Power Amplifier Use .2SB507,2SB508 and 2SD313 ,2SD314 are complementary pairs respectively. .These are designed for the output stage of 15W to 25V? AF power amplifier. .2SB507 and 2SB508, or 2SD313 and , 8 MHz Output Capacitance cob /VCB= (-) 10V,\ 2SB507 , 508 (130) pF ,f=lMHz > 2SD313 ,314 65 pF


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PDF 2SB507 2SD313 2SD31 2SB508 2SD314 2SB508, to220aa 2sb507 sanyo TRANSISTOR 2SB507 transistor 2sd313 280314
2012 - Not Available

Abstract: No abstract text available
Text: Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T www.unisonic.com.tw , UNISO TE NIC CHNO G SCO LTD LO IE ., 2SD313 NPN SILICON TRANSISTOR N PN EPI T AX I AL PLAN AR T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SD313 is designed for use in general purpose , C E B C E Packing Tube Tube 1 of 4 QW-R203-001,E 2SD313 ̈ NPN SILICON , 160-320 2 of 4 QW-R203-001,E 2SD313 ̈ NPN SILICON TRANSISTOR h FE Saturation Voltage


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PDF 2SD313 2SD313 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T O-220 O-220F QW-R203-001
2010 - 2SD313

Abstract: transistor 2sd313 2sd313 applications 2sd313l QW-R203-001
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION NPN SILICON TRANSISTOR The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-001,C 2SD313 ABSOLUTE


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PDF 2SD313 2SD313 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T O-220 O-220F QW-R203-001 transistor 2sd313 2sd313 applications 2sd313l
TRANSISTOR B507

Abstract: TRANSISTOR d313 D313 amplifier SD313 D313 VOLTAGE REGULATOR Sanyo D313 D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor
Text: switching-on time. Darlington output stage of 2SB507 / 2SD313. High input impedance of 100 kohm by bootstrap , ,2SB508 and 2SD313 ,2SD314 are complementary pairs respectively. .These are designed for the output stage of 15W to 25W AF power amplifier. .2SB507 and 2SB508, or 2SD313 and 2SD314, differ from their care , Capacitance cob /Vç3= (-) 10V,\ 2SB507,508 'f=lMHz 1 2SD313 , 314 (130) 65 pF pF C-E Saturation Voltage VcE , *:2SB507,508/ 2SD313 ,314 are classified by 1A hFE as follows: 40 C 80 60 D 120 100 E 200 160 F 320 Case


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PDF T-33-^ 2SB507, 2SB507 2SB508 2SD313 2SD314 2SB508, 2SD314, TRANSISTOR B507 TRANSISTOR d313 D313 amplifier SD313 D313 VOLTAGE REGULATOR Sanyo D313 D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor
2006 - 2SD313

Abstract: 2sd313 equivalent 2SB507
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value , 100-200 160-320 Typical Characteristics Typical Characteristics 2SD313 Jiangsu


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PDF O-220 2SD313 O-220 2SB507 200mA 500mA 2SD313 2sd313 equivalent 2SB507
2014 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T 2SD313L-x-TQ2-T 2SD313G-x-TQ2-T 2SD313L-x-TQ2-R 2SD313G-x-TQ2-R Note: Pin assignment: E: Emitter B: Base C: Collector  Package TO-220 TO


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PDF 2SD313 2SD313 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T 2SD313L-x-TQ2-T 2SD313G-x-TQ2-T 2SD313L-x-TQ2-R 2SD313G-x-TQ2-R
2012 - 2sd313

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION NPN SILICON TRANSISTOR The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-001,E 2SD313 ABSOLUTE


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PDF 2SD313 2SD313 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T O-220 O-220F QW-R203-001
2SD313

Abstract: 2sd313 equivalent 2SB507 416W
Text: SavantIC Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION , SavantIC Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors CHARACTERISTICS , ) 3 2SD313 -


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PDF 2SD313 O-220C 2SB507 2SD313 2sd313 equivalent 2SB507 416W
2sd313 equivalent

Abstract: 2SD313 2sd313 applications 2SB507
Text: Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION , to case Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power , Specification 2SD313 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions


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PDF 2SD313 O-220C 2SB507 2sd313 equivalent 2SD313 2sd313 applications 2SB507
2SD454

Abstract: 2SC901 2SC1667 2SC2516 NEC 2SD400 E 2SD647 2SD473 2sc2120 2s0867 2SD526
Text: 2SC2073 9 c m i 2SD313 2SD313 2SD313 2SD526


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PDF 2SD439 2SD457 2SD642 2SD1196 2SD635 2SD633 2SD657 2SD523 2SC1449 2SC2236 2SD454 2SC901 2SC1667 2SC2516 NEC 2SD400 E 2SD647 2SD473 2sc2120 2s0867 2SD526
2005 - 2SD313

Abstract: 2SB507 2sd313 equivalent 2SD313 E
Text: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN , ://www.weitron.com.tw 1/4 06-Feb-07 2SD313 ELECTRICAL CHARACTERISTICS (TA=25°C Unless otherwise noted , ://www.weitron.com.tw 2/4 06-Feb-07 2SD313 Sa tu ration Vol ta ge, VCE (S AT) (mV) 1000 h FE 100 , http://www.weitron.com.tw 3/4 06-Feb-07 2SD313 TO-220 Outline Dimensions D C1 F


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PDF 2SD313 2SB507 O-220 06-Feb-07 O-220 2SD313 2SB507 2sd313 equivalent 2SD313 E
2SD313

Abstract: 2SB507 transistor 2sd313
Text: Current Gain hFE= 40-320@lc= 1.0A * Complementary to PNP 2SB507 MAXIMUM RATINGS NPN 2SD313 3 AMPERE POWER TRANASISTORS 60 VOLTS 30 WATTS Characteristic Symbol 2SD313 Unit Collector-Emitter Voltage VCEO , J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 0 3.70 3.90 2SD313 NPN ELECTRICAL , 2.0% * hFE(2) Classification :_ 40 C 80 60 D 120 100 E 200 160 F 320 2SD313 NPN le - Vce DC


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PDF 2SB507 2SD313 2SD313 2SB507 transistor 2sd313
2SD1148

Abstract: 2SC1923 2SC3296 2SD895 2SD313 2SC3217 2SC2926 2SC519A 2SC2242 2SD818
Text: - 106 - S! S Type No. tt « Manuf. H m SANYO K 'S. TOSHIBA 0 1 NEC 0 ÍL HITACHI « ± a FUJITSU fô T MATSUSHITA H « MITSUBISHI □ — A ROHM 2SC 1102 s m 2SC515A 2SC2611 2SC 1103 s s 2SC1447 2SC2258 2SC3272 2SC 1103 A a m 2SC3269 2SC 1104 s m 2SC3296 2 SC 1105 s « 2SC1755 2SC2242 2SC 1106 0 w 2SC1576 2SC 1107 yy 2SD313 2SD526 2SD288 2SC4ÛÛ7 2SC 1108 it'yiry 2SD313 2SD526 2SD288 2SC4007 2SC 1109 -y-vir V 2SD314 2SD526 2SD289 2SC4007 2SC


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PDF 2SC515A 2SC2611 2SC1447 2SC2258 2SC3272 2SC3269 2SC3296 2SC1755 2SC2242 2SC1576 2SD1148 2SC1923 2SC3296 2SD895 2SD313 2SC3217 2SC2926 2SC519A 2SC2242 2SD818
2SB 2045

Abstract: 2SD313 B507D 2sd314 2sb507 sanyo b 507 2SB507
Text: T'33')? 2012 PNP/ npn Triple D iffu sed P lan a r S ilic o n T ra n sisto rs 2SD313 , \ . , ,2SB508 and 2SD313 ,2SD314 are complementary pairs respectively. .These are designed for the output stage of 15W to 25W AF power amplifier. .2SB507 and 2SB508, or 2SD313 and 2SD314, differ from their care , ( - ) IOVa 2SB507,508 'f=lMHz > 2SD313 ,314 65 (-) 0.4 (-) 1.0 V c e (sat) IC=(-)2A,IB=(-)0.2A (-)1.5 , / 2SD313 ,314 are classified by 1A hpg as follows: 40 C 80 60 D 120 100 E 200 160 F 320 Case O u tlin e


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PDF 711707t 2SB507, 201OA 2SD313, 2SB507 2SB508 2SD313 2SD314 2SB508, 2SB 2045 B507D 2sb507 sanyo b 507
2006 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value , 100-200 160-320 A,Mar,2011 Typical Characteristics 2SD313 Typical Characteristics A,Mar


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PDF O-220 2SD313 O-220 2SB507 200mA 500mA
2sd313 equivalent

Abstract: 2SD313 ic 4080 TRANSISTOR 2SD313
Text: 2SD313 2SD313 TRANSISTOR (NPN) TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 1.75 W (Tamb=25) 3. EMITTER Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 60 V


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PDF 2SD313 O-220 200mA 500mA 2sd313 equivalent 2SD313 ic 4080 TRANSISTOR 2SD313
2SD811 TOSHIBA

Abstract: 2SC510 RY 228 2SD877 2SD2061 2SD867 2SD2023 2SD880 2SD1270 2SC2120
Text: - 210 - * * * * * * * i * * * * * * * * * * * * * * * * T ype No. 2SD228 2SD234 ^ 2SD235 2SC236 2SD237 2SD238 2SD241 i 2SD242 2SD243 2SD244 2SD246 2SD247 2SD249 2SD250 2SD251 2SD254 2SD255 2SD 256 / 2SD 257 4 2SD 258 2SD 259 / 2SD 261 y 2SD 265 . 2SD 266 2SD 269 2SD 271 2SD 272 2SD 273 ^ 2SÜ 274 j 2SD 283 2SD 284 2SD 285 2SD 286 m % tt a m . M anuf. h SANYO 2SD313 2SD313 n jft X 3E y y ' r y y-y'ry v-yry y-yry y-yírv yyry


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PDF 2SD228 2SD234 2SD235 2SC236 2SD237 2SD238 2SD241 2SD242 2SD243 2SD244 2SD811 TOSHIBA 2SC510 RY 228 2SD877 2SD2061 2SD867 2SD2023 2SD880 2SD1270 2SC2120
2SC517

Abstract: 2SC2804 2Sd428 2sc1279 2SC503 2SC1923 2sc1907 2SC1515 2SC1047 2SC1809
Text: / 2SC2229 2SC2258 2SC3800 2SC 783 „,- * S 2SD313 2SD526 2SD288 2SD1778 2SC 790 X s 2SD313


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PDF 2SC51T 2SC2166 2SC2073 2SD859A 2SC3968 2SC780ACG) 2SC1279 2SC1515 2SC1573 2SC1914A 2SC517 2SC2804 2Sd428 2SC503 2SC1923 2sc1907 2SC1047 2SC1809
Not Available

Abstract: No abstract text available
Text: 2SD313 (NPN) TO-220 Transistor 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Features 1 2 3 Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base , =0,f=1MHz CLASSIFICATION OF Rank Range hFE(1) C 40-80 D 60-120 E 100-200 F 160-320 2SD313 (NPN


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PDF 2SD313 O-220 O-220 2SB507 200mA 500mA
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