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2SD2167T100P ROHM Semiconductor Small Signal Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, SC-62, 3 PIN

2SD2167 datasheet (11)

Part Manufacturer Description Type PDF
2SD2167 Kexin Power Transistor Original PDF
2SD2167 ROHM Power Transistor (31±4V, 2A) Original PDF
2SD2167 ROHM Power Transistor Original PDF
2SD2167 TY Semiconductor Power Transistor - SOT-89 Original PDF
2SD2167 Others Transistor Substitution Data Book 1993 Scan PDF
2SD2167 Others Japanese Transistor Cross References (2S) Scan PDF
2SD2167 ROHM Transistor Selection Guide Scan PDF
2SD2167 ROHM Power Transistor (31+4V, 2A) Scan PDF
2SD2167T100N ROHM Power Transistor (31 ±4 V, 2 A) Original PDF
2SD2167T100P ROHM Power Transistor (31 ±4 V, 2 A) Original PDF
2SD2167T100Q ROHM Power Transistor (31 ±4 V, 2 A) Original PDF

2SD2167 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract:
Text: 2SD2167 7 . ^ /Transistors l f c f $ * V 7 N P N '> U = J > Epitaxial Planar NPN Silicon Transistor • sir yi V; V sji -r 2SD2167 rtiiH /D im e n s io n s (Unit: mm) 1) â , =10V, Ie= 0A, f=1MHz *3 / til.*91$ ROHm 747 Is ~ > v 7 .^ /T r a n s is to r s 7 2SD2167 , W 1 ! 2 i g o IS 2SD2167 -1 - n o n m 749 h 7 > y X $ / Transistors 2SD2167 v^ASO-OCflro


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PDF 2SD2167 A/50mA 30MHz
2004 - 2SD2167

Abstract:
Text: 2SD2167 Transistors Power Transistor (31±4V, 2A) 2SD2167 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm , Type Package hFE 2SD2167 MPT3 NPQ Marking DL T100 Code Basic ordering unit (pieces , 1MHz Measured using pulse current. Rev.A 1/2 2SD2167 Transistors Electrical


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PDF 2SD2167 SC-62 2SD2167 T100
1999 - 2A 5v ZENER DIODE

Abstract:
Text: 2SD2167 Transistors Power Transistor (31±4V, 2A) 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm ceramic board) 4.0 1.5 0.4 1.0 2.5 0.5 1.6 0.5 3.0 (2) 0.4 1.5 1.5 , board. !Packaging specifications and hFE Type 2SD2167 Package hFE Marking MPT3 NPQ


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PDF 2SD2167 SC-62 A/50mA 30MHz 2A 5v ZENER DIODE 2SD2167 T100
sc6202

Abstract:
Text:  2SD2167 Transistors_ Power Transistor (31+4V, 2A) 2SD2167 •Features 1 ) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) Pc=2 W (on 40x40x0.7mm ceramic board) •External dimensions (Units : mm) ROHM : MPT3 EIAJ : SC-62 0 2 5 05 u -fSH r sf (1) Base(Gate) (2) Collector , a 40 x 40 x 0.7 mm ceramic board. •Packaging specifications and Fife Type 2SD2167 Packaqe MPT3


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PDF 2SD2167 40x40x0 SC-62 /50mA 30MHz sc6202 SC-6202 MARKING DL ZENER DIODE 2A 2SD2167 T100
2002 - ZENER DIODE 2A

Abstract:
Text: 2SD2167 Transistors Power Transistor (31±4V, 2A) 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm ceramic board) 4.0 1.5 0.4 1.0 2.5 1.6 0.5 4.5 (1) (2) 3.0 0.5 (1) Base , When mounted on a 40 × 40 × 0.7 mm ceramic board. !Packaging specifications and hFE Type 2SD2167


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PDF 2SD2167 SC-62 A/50mA 30MHz ZENER DIODE 2A 2A 5v ZENER DIODE 2SD2167 T100
Zener diode smd marking 27

Abstract:
Text: Transistors SMD Type Power Transistor 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W (on 40 40 0.7mm ceramic board) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 31 4 V Collector-emitter , mounted on a 40 x 40 x 0.7 mm ceramic board. www.kexin.com.cn 1 Transistors SMD Type 2SD2167


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PDF 2SD2167 30MHz Zener diode smd marking 27 2A 5v ZENER DIODE smd zener diode 5v ZENER DIODE 2A 2SD2167 SMD TRANSISTOR MARKING 2A
2002 - Not Available

Abstract:
Text: 2SD2167 Transistors Power Transistor (31±4V, 2A) 2SD2167 !External dimensions (Units : mm) !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to low loads. 4) PC=2 W (on 40×40×0.7mm ceramic board) 4.0 1.5 0.4 1.0 2.5 1.6 0.5 4.5 (1) (2) 3.0 0.5 (1) Base , specifications and hFE Type 2SD2167 Package hFE MPT3 NPQ Marking DL∗ Code Basic ordering


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PDF 2SD2167 SC-62
Not Available

Abstract:
Text: Transistors IC SMD Type Product specification 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W (on 40 40 0.7mm ceramic board) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 31 4 V , 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SD2167 Electrical


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PDF 2SD2167 30MHz
Not Available

Abstract:
Text: h 7 > V ^ ^/Transistors 2SD2167 2SD2167 vu=i>h7>v* W Epitaxial Planar NPN Silicon Transistor ftHiSMzftiSliffl/l-ow Freq. Power Amp. • ft* • W fN 'jiia / 'D im e n sio n s (U nit: mm) 1) H U ? ? • 3 1 ± 4 V 0 }y x l — ? ! * - K S rtlK o 2) "J tlT -* & . < » r t v V W f t H U Z 'P 4<.'o 3 ) L f m x 'o m s m . i i y - '>*csn .\, 4) VcE(sat)*f‘ '''o l6 VCE (sat) = 0.25V (Typ.) (Ic /Ib — 1A/50mA) 5) P c = 2 W T * 5 (40 X 40 X 0.7mm • Features 1


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PDF 2SD2167 A/50mA) 30MHz
0.25V zener

Abstract:
Text: N "7 > V 7s 2/Transistors 2SD2167 2SD216T 1) Epitaxial Planar NPN Silicon Transistor fiffl/L o w Freq. Power Amp. ÿ j-Îi^ jiH /D im e n s io n s (Unit : mm) · A i- x n m : : 3 1 ± 4 V W 'V 2) 7 i t - i OE & i'o » / < 7 7 i« g i: ÿ l.fi±0.l = jr T i_ -C 4) V ce (sat)*'"^'» VcE (sat) = 0.25V (Typ.) (lC/lB = 1 A /5 0 m A ) n p ) p | +l o, 4 ± D . ° I -5±0.1 m t |0 .5 , m m ndi |S m « 35 a I H it ISi « I u V Si « i# m < : *> m » s 2SD2167


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PDF 2SD2167 2SD216T SC-62 40X40X0 A/50mA 30MHz 0.25V zener 2SD2167
2SD2576

Abstract:
Text: Transistors 2SD2167 2SD2394 / 2SD2576 (92S-358­D310) (94L-1098-D348) 314 ROHM


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PDF 2SD2167 2SD2394 2SD2576 92S-358 94L-1098-D348) 2SD2576 D310 2SD2167 D348 D348 transistor
transistor D 2394

Abstract:
Text: Transistors 2SD2167 2SD2394 / 2SD2576 ·F e a tu re s 1 ) Built-in zs n e r diode betw een collector and base. 2 ) Z en er diode has low voltage dispersion. 3 ) Strong protection aga inst reverse pow er surges due to low loads. 4) W (On 4 0 X 4 0 X 0 . 7m m ceram ic board) I Power Transistor (31 ± 4 V , 2A) 2SD2167 · E le c tr ic a l characteristics ( T a = 2 5 C ) Param eter Collector-base voltage Collector-em itter voitage Em itter-base voltage C ollector current Symbol VCBO V ceo Veso


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PDF 2SD2167 2SD2394 2SD2576 2SD2167 -----2SD2576 cb--60V 94L-1098-0348) transistor D 2394 2SD2576
2sD2394

Abstract:
Text: Transistors 2SD2167 2SD2394 / 2SD2576 ·F s a tu rs s 1) 2) 3) 4) Built-in zene r diode betw een collector and base. Z ener diode has low voltage dispersion. Strong protection against reverse pow er surges due to low loads. P c * 2 W (On 4 0 X 4 0 X 0 -7 m m ceram ic board) I Power Transistor (31 ± 4 V , 2A) ·E le c tric a l characteristics (T a = 2 5 tî) Param eter Collector-base , 3 0 .5 2SD2167 Unit V V V A (DC) A (Pulse) W W ·c 0 ·P a c ka g in g specifications end h


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PDF 2SD2167 2SD2394 2SD2576 2SD2167 O-220, 0Dlb713 O-220FN O-220FN O220FP T0-220FP, D348 transistor 2SD2576 marking HRA TI2150
1998 - 2SD1834

Abstract:
Text: 82 390 3 2SD2167 DLË 31±4 2 3 2 56 270 3 2SD2211 DQË 160 1.5 3 2 56 390 5 BCX56 DFË 80 1 1 40 250 LOW


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PDF SC-62 OT-89) 2SC4132 2SC5053 2SD1664 2SD1766 2SD1767 2SD1898 2SD2167 2SD2211 2SD1834 2SD2212 REEL marking 2sd1664
2SA1690

Abstract:
Text: €” 82-270 2 500 2SD2167 — 31+4 2(3) 2* — 56-270 3 500 2SB1424 — LowVce(sat) -20 -3(-5) 2* â


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PDF OT-89) 25iCi 2SB1132 2SB1184 2SB1188 2SB1182 2SB1189 2SB1260 2SB1181 2SB1275 2SA1690 BCX53 Rohm RXT-A28 2SB1189 2SB1184 2SB1182 2SB1181 2SD1834
2SK1973

Abstract:
Text: Transistor Quick reference I Laadad p P a g e lli Package-Application Application Vceo (V) * * y,CES * * *w CER Vn«w 40 Low Noise 50 120 25 Pre Amp 60 120 31 ± 4 /2SA103GK \2S C 2411K / 2SB1197K 2SD1781K 2SB1051K 2SD1484K / 2SA1774 \2 S C 4 6 1 7 2SC4723 /2SA 1576A 2SC4081 /2 S A 1 57 9 \2S C 4102 EM3 I UMT | Package | Part No. f 2SA1037AKLN(E) SMT \2SC 2412KLM E) /2SA1037AKUKRS) 2SC2412KLN(RS) /2SA 1455K V2SC3722K 2SC4642K / 2SA1037AK \2SC 2412K /2S A 1514K 2SC3906K 2SD2167 MPT I CRT F5 | PSD


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PDF /2SA103GK 2411K 2SB1197K 2SD1781K 2SB1051K 2SD1484K 2SA1774 2SC4723 2SC4081 2SA1037AKLN 2SK1973 d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2SA103G 2S01781K 2sc4912 2SK2307
Not Available

Abstract:
Text: MPT · CPT F5 · PSD Package Application MPT 2SB1132 w an ' 2SA1900 2SB1188 2SB1189 2SB1260 Driver 2SC4132 2SD1664 f 2SC5053 2SD1766 2SD1767 2SD1898 2SD2211 2SD2167 2SA1797 2SB1424 h'GP, f 2SB1561 Low Vcrfsat) 2SC4672 2SD2150 h'G T, f 2SD2391 - 2SB1308 Strobo Flash Low Vcdsat) 2SB1386 2SD1963 2SD2098 2SB1427 High hFE 2SD2153 Darlington 2SD1834 2SD2195 2SD2170 2SD2212 2SA1759 2SA1812 High Voltage SW 2SC4505 Notes : 1. Under development CPT F5 Part No. 2SB1184 2SB1182 2SB1181 2SB1275 2SB1516 2SB1535


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PDF 2SB1132 2SA1900 2SB1188 2SB1189 2SB1260 2SC4132 2SD1664 2SC5053 2SD1766 2SD1767
MARKING CODE f5

Abstract:
Text: 2SD2211 2SD1918 - 160 1.5 - 2* 10 56—270 5 100 2SD2167 - - 31±4 2 3 2* - 56—270 3 500 Low V ce


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PDF 2SB1132 2S81184 2S81182 2S81189 2SB1260 2SB1181 2S81275 2SC4132 MARKING CODE f5 2sd198 2SA1812 2SA1690 2SD1760 2SD1766 2SD1788
Not Available

Abstract:
Text: * 2* 2* _ 2* 2* 2* 2* 2* 2* - 2S01760 2SD1758 - 2SD1766 2SD1767 2S 0 1898 2SD2211 2SD2167


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PDF 2SB1132 2SA1900 --200k OT-89)
2SC5119

Abstract:
Text: 2SD2167 - - 31 ±4 2 3 2* - 56—270 NPQ 3 500 - G59! Low VcE(sat) Ï7M 2SA1797 - - -50 -2 -5 2* -


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PDF 2SB1132 2SA1900 2SB1184 2SB1188 2SB1182 2SB1189 2SB1260 2SB1181 2SB1275 2SB1516 2SC5119 2SD1834 2SD2170 transistor 200l
2SC4074K

Abstract:
Text: IMD : i 2SD1664 2SD1766 2SD1767 2SD1834 2SD1898 2SD1963 2SD2098 2SC4672 2SD2167 2SD2170


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PDF 2SC4098 2SC4081 2SA1808 2SC4723 2SC4700 2SD2351 2SC4774 2SC4097 2SA1576 2SA1577 2SC4074K FMC5 TD113ZK 2SA1073K DRE01 fmq1 IMB5 imb8 IMH10
2SA1807

Abstract:
Text: 160 1.5 - 2* 10 56—270 5 100 - 2SD2167 - - 31 ±4 2 3 2* - 56-270 3 500 - mm Low VcE(sat) E3


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PDF 2SB1132 2SA1900 2S61184 2SB1188 2SB1182 2SB1189 2SB1260 2S81181 2SB1275 2SB1516 2SA1807 sot89 E3
1998 - D352 transistor

Abstract:
Text: 2SD2167 2SD2394 / 2SD2576 (92S-358­D310) (94L-1098-D348) 314 Transistors 2SD2170 2SC4574


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PDF 2SA1759 2SC4505 2SC4620 96-97-A324) 96-178-C300) 2SA1797 2SB1443 2SC4672 96-100-B208) 96-181-D208) D352 transistor transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 9697a 96-596-A74 2SD1764
2000 - rkm 33 transistor

Abstract:
Text: 2SD2167 G5 UMG5N DM 2SD2170 G6 UMG6N DN 2SD2153 G7 UMG7N DP 2SD2195


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PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A 2SA1885 rkm 35 transistor 2SC5274
122JK

Abstract:
Text: . 2SD2167 . 2SD2170


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PDF 2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 2SA1036K 2SA1037AK 2SA1037AKLN 2SA1455K RU101 122JK KY 719 TB143TK TB163TK
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