The Datasheet Archive

2SD2134 datasheet (10)

Part Manufacturer Description Type PDF
2SD2134 Panasonic Silicon NPN epitaxial planar type Original PDF
2SD2134 Panasonic Power Device - Power Transistors - For Audio Original PDF
2SD2134 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD2134 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD2134 Others Japanese Transistor Cross References (2S) Scan PDF
2SD2134 Panasonic Power Transistors Scan PDF
2SD21340RA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 150VCEO 1A MT-3 Original PDF
2SD2134Q Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
2SD2134R Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
2SD2134R Panasonic Silicon NPN Planar Transistor Scan PDF

2SD2134 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
NEC 2SD1564

Abstract: 2SC3296 2sd2394 2012 NEC 2SD1993 2sd1780 2SD1995 2SD1991R 2sd1855 2SC4488
Text: 2SC3666 2SD1993A n . 2SD2409 2SD1855 2SC3981 2SD2134 2SD2133 2SD2134


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PDF 2SD1986 2SD1987 2SD1988 2SD1989 2SD1990 2SD1991 2SD1992 2SD1993 2SD1994 2SD1995 NEC 2SD1564 2SC3296 2sd2394 2012 NEC 2sd1780 2SD1991R 2sd1855 2SC4488
953a

Abstract: 2SB1414 2SD2134
Text: Power Transistors 2SD2134 2SD2134 Silicon NPN Epitaxial Planar Type AF Driver, High Power Amplifier Complementary Pair with 2SB1414 ■Features • Very good linearity of DC current gain '(Iife) • High transition frequency (fT) • Optimum for the driver of 60-100W in complementary pair with 2SB1414 ■Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage Vcbo 180 , 2SD2134 Pc-Ta Tc=Ta V V N N


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PDF 2SD2134 2SB1414 0-100W 953a 2SB1414 2SD2134
953a

Abstract: 2SB1414 2SD2134
Text: Power Transistors 2SD2134 2SD2134 Silicon NPN Epitaxial Planar Type AF Driver, High Power Amplifier Complementary Pair with 2SB1414 ■Features • Very good linearity of DC current gain (hFE) • High transition frequency (fT) • Optimum for the driver of 60-100W in complementary pair with 2SB1414 ■Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage Vcbo 180 , Copyrighted By Its Respective Manufacturer Power Transistors 2SD2134 Pc-Ta S 16 Ì 08 1 Tc=Ti


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PDF 2SD2134 2SB1414 0-100W 953a 2SB1414 2SD2134
2003 - 2SB1414

Abstract: 2SD2134
Text: Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 Unit: mm 90° 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 · Excellent collector current IC characteristics of forward current transfer ratio hFE · High transition frequency fT · A complementary pair with 2SB1414, is optimum for the , 2003 SJD00245BED 1 2SD2134 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V


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PDF 2SD2134 2SB1414 2SB1414, 2SB1414 2SD2134
2006 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 10.8±0.2 Unit: mm 7.5±0.2 3.8±0.2 4.5±0.2 Features · Excellent collector current IC characteristics of forward current transfer ratio hFE · High transition frequency fT · A complementary pair with , /95/EC). 2SD2134 PC Ta Collector-emitter saturation voltage VCE(sat) (V) 2.0 Without heat sink


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PDF 2002/95/EC) 2SD2134 2SB1414 2SB1414,
2006 - 2SB1414

Abstract: 2SD2134
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin , the RoHS Directive (EU 2002/95/EC). 2SD2134 VCE(sat) IC Collector-emitter saturation voltage VCE


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PDF 2002/95/EC) 2SD2134 2SB1414 2SB1414 2SD2134
2002 - Not Available

Abstract: No abstract text available
Text: Power Transistors 2SD2134 Silicon NPN epitaxial planar type Unit: mm For low-frequency driver/high power amplification 90° 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 · Excellent current IC characteristics of forward current transfer ratio hFE vs. collector · High transition frequency fT · Optimum for the driver of 60 W to 100 W output amplifier on , to 155 130 to 220 Publication date: May 2002 SJD00245AED 1 2SD2134 VCE(sat) IC


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PDF 2SD2134 2SB1414
2SD2172

Abstract: 2SD2165 2SD2144S 2SD2138 2SD2137A 2SD2137 2SD2136 2SD2135 2SD2134 2SD2133
Text: - 282 - Sä g tt 8 M & (Ta=25'C, *EPIiTc=25T!) 1 S ß S tt (Ta=25tJ) [*EPIitypffi] (V) Vceo (V) !c!dc) (A) Pc (») Pc* (») T (max) (wa) VCB (V) (min) (max) Vce (V) Ic/Ie (A) ik (max) (V) /^'Dß\oat/ (V) Ic (A) Ib (A) 2SD2133 KT LF PA 30 25 1 1.5 0.1 20 85 340 10 0.5 0.4 1.2 0. 5 0.05 2SD2134 KT LP PA/D 150 150 1 1.5 65 330 10 0.15 2 2 0.5 , -3) ECB 2SD2133 200* 10 0. 05 20* (MT-3) ECB 2SD2134 (MT-3) ECB, Da/E 2SD2135


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PDF 2SD2133 2SD2134 2SD2135 2SD2136 2SD2137 2SD2137A 2SD2138 2SD2138A 2SD2156 T0-220Fa) 2SD2172 2SD2165 2SD2144S
4712 4723

Abstract: 2SC4933 2SC4566 2SC4717 4735 2SC2242 2SC2688 2SC2705 2Sc3468 2SC3451
Text: - 197 - S £ Type Ko. tt « Ma nui'. H $ SANYO X S TOSHIBA 0 « SEC 0 iL HITACHI « ± il FUJITSU fô T MATSUSHITA H m MITSUBISHI □ — A ROHM 2SC 4704,/ S iL 2SC3956 2SC3963 2SC2688 2SD2134 2SC 4705 H # 2SC3617 2SC 4706 X 1tviry 2SC3451 2SD1314 2SC 4707 X s 2SC4485 2SD789 2SD2074 2SC3244 2SC 4708 y 0 iL 2SC4563 2SC3611 2SC 4712 S ÍL 2SD2342 2SC 4713 □ —À 2SC3Ì22 2SC2620 2SC427Û zòi/jaai 2SC 4714 fò T 2SC4075 2SC2242


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PDF 2SC3956 2SC3963 2SC2688 2SD2134 2SC3617 2SC3451 2SD1314 2SC4485 2SD789 2SD2074 4712 4723 2SC4933 2SC4566 2SC4717 4735 2SC2242 2SC2688 2SC2705 2Sc3468
2SB1414

Abstract: 2SD2134 c20e
Text: Power Transistors 2SB1414 2SB1414 Silicon PNP Epitaxial Planar Type AF Drivers, High Power Amplifier Complementary Pair with 2SD2134 ■Features • Very good linearity of DC current gain (hFE) • High transition frequency (fT) • Automatic mounting by radial taping is possible. ■Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage Vcbo -180 V Collector-emitter voltage Vceo -180 V Emitter-base voltage Vebo -5 V Peak collector current Icp -1.5 A Collector current Ic


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PDF 2SB1414 2SD2134 bT32fl52 2SD2134 c20e
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 Unit: mm 4.5±0.2 0.65±0.1 90˚ 0.85±0.1 1.0±0.1 0.8 C 0.7±0.1 16.0±1.0 1.15±0.2 ■Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage , This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2134 VCE(sat)  IC


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PDF 2002/95/EC) 2SD2134 2SB1414
2SB1424

Abstract: 2SB1419 2SB1418A 2SB1418 2SB1417A 2SB1417 2SB1416 2SB1414 2SB1413 2sd22
Text: » 5È « ft 200 -10 -0.05 20» (MT-3) ECB 2SB1413 200* -10 0.05 50 2SD2134 (MT


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PDF 2SB1413 2SB1414 ZSB1415 2SB1416 2SB1417 2SB1417A 2SB1418 2SD2185 SC-59 2SB1440 2SB1424 2SB1419 2SB1418A 2SB1418 2SB1414 2sd22
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 3.8±0.2 Unit: mm 7.5±0.2 4.5±0.2 Features · Excellent current IC characteristics of forward current transfer ratio hFE vs. collector · High transition frequency fT · Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90° 0.8 C


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PDF 2002/95/EC) 2SB1414 2SD2134
2003 - 2SB1414

Abstract: 2SD2134
Text: Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 Unit: mm 90° 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 · Excellent current IC characteristics of forward current transfer ratio hFE vs. collector · High transition frequency fT · Allowing automatic insertion with radial taping 16.0±1.0 Features 10.8±0.2 7.5±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2


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PDF 2SB1414 2SD2134 2SB1414 2SD2134
2003 - 2SB1414

Abstract: 2SD2134
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl


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PDF 2002/95/EC) 2SB1414 2SD2134 2SB1414 2SD2134
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 Unit: mm 3.8±0.2 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 0.8 C 16.0±1.0 pla d in ea ne clu se pla m d de vis ht ne ai ma s fo tp it f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P


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PDF 2002/95/EC) 2SB1414 2SD2134
D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor 2sD2504 transistor D2052 transistor transistor b1154 D1244
Text: 40 50 60 60+10 400 ( * : 800V) *2SC4985 2SD2220© (Vceo =80V| i 2SD2134 2SB1435


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PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor 2sD2504 transistor D2052 transistor transistor b1154 D1244
D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE 2SC3939 C3795 2SB1526
Text: 180 (* : 300V) , 2SB1414 2SD2134 *A 2SC5340 400 (* : 800V) *2SC4985 35 2SB1413 i 2SD2133 1 40


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PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE 2SC3939 C3795 2SB1526
MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: 2SC3944 2SD2134 - - - 2SD1264A - - - - - Note) Alternative product is, almost alike


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PDF MN101C01C MN15224 MN101C01D MN15226 MN101C027 MN15261 MN101C03A MN101C38A MN15263 MN101C06D MN1873287 an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
an6512n

Abstract: mn1225 mn6520 MN1280 MN6130 MN1201A MN6147C MN12C201D MN12C261D MN3107
Text: 2SC3870 2SC3210 2SC3352/A 2SC3972/A 2SC3211/A - 2SC3211 - 2SC4975 2SC2406 2SC3944 2SD2134 -


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PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 mn6520 MN1280 MN6130 MN6147C MN12C201D MN12C261D MN3107
AN3962FB

Abstract: MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: 2SD2067 © 2SD2071 2SD2074 2SD2133 2SD2134 2SD2136 2SD2137/A 2S D 2138/A © 2SD2139 2SD2140 2SD2151 2SD2156


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PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: No file text available


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PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: No file text available


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PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: No file text available


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PDF
2010 - schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: No file text available


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PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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