The Datasheet Archive

2SD2066 datasheet (7)

Part Manufacturer Description Type PDF
2SD2066 Various Russian Datasheets Transistor Original PDF
2SD2066 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD2066 Others Transistor Substitution Data Book 1993 Scan PDF
2SD2066 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SD2066 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD2066 Others Japanese Transistor Cross References (2S) Scan PDF
2SD2066 Panasonic Silicon NPN triple diffusion planar type transistor Scan PDF

2SD2066 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SD2066

Abstract: 2SB1373
Text: SavantIC Semiconductor Product Specification 2SD2066 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1373 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector , Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2066 Silicon , Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD2066 -


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PDF 2SD2066 2SB1373 2SD2066 2SB1373
Not Available

Abstract: No abstract text available
Text: 2SD2066 Power Transistors 2SD2066 Silicon NPN Triple-Diffused Planar Type ■Package Dimensions High Power Amplifier Complementary Pair with 2SB1373 ■Features • H ig h -v o ltag e: V leo = 1 6 0 V (m inim um ) • M inim izes c o m p o n e n t c o u n ts and sim plifies circ u itry • V ery g o o d lin e a rity of DC c u r re n t gain (hFe) • H igh tra n sitio n fre q u e n c , thu (aC/W ) > N o te 2SD2066 = 1 0 -4 ip -3 IQ -2 lo -l 1 10 n>2 H)3


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PDF 2SD2066 2SB1373
1999 - 2SD2066

Abstract: 2SB1373
Text: Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 3.2±0.1 3.5 q 19.0±0.3 q , P hFE2 60 to 120 80 to 160 100 to 200 1 Power Transistors 2SD2066 IC - VCE , (V) 10 Power Transistors 2SD2066 Rth(t) - t Thermal resistance Rth(t) (°C/W) 10000


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PDF 2SD2066 2SB1373 2SD2066 2SB1373
1999 - 2SD2066

Abstract: 2SB1373
Text: Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 Unit: mm 15.0±0.5 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 3.2±0.1 3.5 q 19.0±0.3 q 16.2±0.5 q High breakdown voltage: VCEO = 160V , to 160 100 to 200 1 Power Transistors 2SD2066 IC - VCE (1) TC=Ta (2) With a 100 × , 2SD2066 Rth(t) - t Thermal resistance Rth(t) (°C/W) 10000 Note: Rth was measured at Ta=25°C and


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PDF 2SD2066 2SB1373 2SD2066 2SB1373
1999 - Not Available

Abstract: No abstract text available
Text: Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 4.0±0.1 Unit: mm M Di ain sc te on na tin nc ue e/ d 4.0±0.1 13.0±0.5 s Features q q 15.0±0.5 10.5±0.5 4.5±0.2 2.0±0.1 q q High breakdown voltage: VCEO , =2.5W) 700mA 2SD2066 IC - VCE IB=800mA 20 TC=25°C 600mA 500mA 400mA 300mA 12 200mA 8 VCE=5V IC - VBE , 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 2SD2066 Thermal resistance Rth(t) (°C/W


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PDF 2SD2066 2SB1373
2sd2041

Abstract: 2SD2061 2SD2076 2SD2073 2sd2083 2SD2054 2SD2085 2SD2090 2SD2046 2SD2068
Text: 60 200 5 1 2 4 0.4 9<;n9nfii; PA 140 140 7 3 80 50 140 60 200 5 1 2 5 0. 5 2SD2066 fiTF PA 160 , * 2SB1373 TOP-3a BCE 2SD2066 (MT-1) ECB/Da 2SD2067 150* 10 -0.05 (T092-SL) ECB/Da


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PDF ZSD2040 2SD2041 2SD2042 2SD2043 2SD2044 2SD2045 2SD2046 2SB1373 2SD2066 2SD2067 2SD2061 2SD2076 2SD2073 2sd2083 2SD2054 2SD2085 2SD2090 2SD2068
2SB1373

Abstract: 2SD2066
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1373 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2066 APPLICATIONS ·Designed for high power amplifications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO Emitter-Base Voltage UNIT scs .i w Collector-Base Voltage VCEO VALUE w w -160 V


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PDF 2SB1373 -160V 2SD2066 -160V; -20mA; 2SB1373 2SD2066
2SB1373

Abstract: 2SD2066
Text: SavantIC Semiconductor Product Specification 2SB1373 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2066 ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open


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PDF 2SB1373 2SD2066 -160V; -20mA 2SB1373 2SD2066
TT 2076

Abstract: 2SD1491 2SD1929 2SC3907 toshiba 2SD1407 2SD2058 2SD2251 2056 2SD1266 nec 258
Text: - 258 - Type No. 2SD2056 2SD2057 2SD2058 * 2SD2059 * 2SD2060 2SD2061 ^ 2SD2062 2SD2063 2SD2064 2SD2066 , 2SD2067 2SD2068 2SD2069 2SD2070 2SD2071 2SD 2072 2SD 2073 2SD 2074 2SD 2075 2SD 2076 * 2SÖ 2077 2SD 2078 2SD 2079 2SD 2080 2SD 2081 2SD 2082 * 2S0 2084 2SD 2085 2SD 2086 2SD 2087 2SD 2088 2SD 2089 2SD 2090 m tt Manuf. £ = S ¥ SANYO 2SC3748 2SD2251 M - A f é T £ TOSHIBA 2SC3710 2SD1406 2SD1407 2SD1408 2SD1405 s i NEC 2SC3693 2SC3691 2SC4334 2SD1586 2SD1585 B


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PDF 2SD2056 2SD2057 2SD2058 2SD2059 2SD2060 2SD2061 2SD2062 2SD2063 2SD2064 2SD2066 TT 2076 2SD1491 2SD1929 2SC3907 toshiba 2SD1407 2SD2058 2SD2251 2056 2SD1266 nec 258
2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1641 2SD1485 2SA1185 2SD2328 2SD2052 equivalent 2SB1531 2SD1707
Text: 2SB1373/ 2SD2066 2SB1347/2SD2029 2SB1528/2SD2327 180 15 <2.5 10 1(A) 150 2SB1317/2SD1975 2SB1529


OCR Scan
PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2254 2SB1493 2SD1641 2SD1485 2SA1185 2SD2328 2SD2052 equivalent 2SB1531 2SD1707
D2029

Abstract: D2328 2SD2340 2SD1641
Text: ) 2SB1371/2SD2064 2SB1421/2SD2140 2SB1362/2SD2053 2SB1372/2SD2065 2SB1361 /2SD2052 2SB1419 2SB1373/ 2SD2066


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PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 D2029 D2328 2SD2340
2SD1485

Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
Text: /2SD2064 2SB1421/2SD2140 2SB1362/2SD2053 2SB1372/2SD2065 2SB1361/2SD2052 2SB1419 2SB1373/ 2SD2066 2SB1347


OCR Scan
PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC3054 2SC4258 2SD1485 2SD2340 equivalent audio Darlington 200 W
C1959

Abstract: nec 2405 NEC 2403 2sc4560 nec 2410 2SD2409 2sd2427 nec 2412 2SD1509 NEC 2415
Text: 2SC2618 2SC4366 2SC2462 2SD2112 2SC3928 2SC3440 2SC3440 2SD1457 2SD2052 2SD2066


OCR Scan
PDF 2SD2403 2SD2404 2SD2405 2SD2406 2SD2407 2SD2408 2SD2409 2SD2410 2SD2412 2SD2413 C1959 nec 2405 NEC 2403 2sc4560 nec 2410 2sd2427 nec 2412 2SD1509 NEC 2415
2SC3812

Abstract: 2sc2555 2SC4316 2SC4455 2SD2363 ROHM 2SC2712 2SC4649 2SC3447 2SC4640 2SC2712
Text: 2SC4160 2SC2555 2SC4228 2SC3570 2SC4026 2SC3869 2SC4129 2SD1289 2SC3905 2SC2749 2SD2065 2SD2066 2SC3812


OCR Scan
PDF 2SC4625 2SC4626 2SC4627 2SC4628 2SC4629 2SC3447 2SC3796 2SC4618 2SC4649 2SC2555 2SC3812 2SC4316 2SC4455 2SD2363 ROHM 2SC2712 2SC4649 2SC3447 2SC4640 2SC2712
2SB1373

Abstract: 2SD20 2SD2066 8a 949 ILL30
Text: Power Transistors 2SD20Ó6 2SD2066 Silicon NPN Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SB1373 ■Features • High-voltage: Vleo=160V (minimum) • Minimizes component counts and simplifies circuitry • Very good linearity of DC current gain (hFE) • High transition frequency (f-r) • Wide area of safety operation (ASO) ■Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage VcBO 160 V Collector-emitter voltage


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PDF 2SD20Ã 2SD2066 2SB1373 2SB1373 2SD20 2SD2066 8a 949 ILL30
Toshiba 2SC3281

Abstract: 2SC2987A 2SC3281 2sd1703 2sc3281 toshiba 2SD1398 toshiba 2sc3280 2SD2068 2SD1499 2SD1397
Text: 1716 ' fé T 2SC2987A 2SD2066 2SD 1717 / fé T 2SC3280 2SC2987A 2SD2029 2SD 1718 ✓ fÃ


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PDF 2SD2068 2SD1511 2SC2987A 2SC3281 2SC2681 2SC2750 2SD1645 2SD1638 2SD1275A 2SD1739 Toshiba 2SC3281 2SC2987A 2SC3281 2sd1703 2sc3281 toshiba 2SD1398 toshiba 2sc3280 2SD2068 2SD1499 2SD1397
Not Available

Abstract: No abstract text available
Text: -3(a) (D64) TOP-3F(a) (D67) TOP-3L (D71) 2SB1371 /2SD2064 150 2SB1373/ 2SD2066 2SB1317


OCR Scan
PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275
2SD2340 equivalent

Abstract: 2SB1531 2SD1641 2SD1457A 2SD1457 2SC4535 2SB1421 2SA1185 2SD2328 2SD2052 equivalent
Text: 2SB1373/ 2SD2066 2SB1347/2SD2029 2SB1528/2SD2327 180 15 <2.5 10 1(A) 150 2SB1317/2SD1975 2SB1529


OCR Scan
PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent 2SB1531 2SD1641 2SD1457A 2SD1457 2SC4535 2SB1421 2SA1185 2SD2328 2SD2052 equivalent
2SD2340 equivalent

Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Text: 2SB1372/2SD2065 2SB1361 /2SD2052 2SB1419 2SB1373/ 2SD2066 2SB1347/2SD2029 2SB1528/2SD2327 2SB1317/2SD1975


OCR Scan
PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2SD2052 equivalent
2SB13

Abstract: 2SD2066 2SB1373
Text: Power T ransistors 2SB1373 2SB1373 Silicon PNP Triple-Diffused Planar Type High Power Am plifier C om plem entary Pair with 2SD2066 F eatures · V ery good linearity of DC current gain · W ide area o f sa fety operation (ASO) · High transition freq u en cy (fT) · Optimum for hi-fi audio amplifier output * 3.2 ± 0 .1 (Iif e ) P ackage Dim ensions 15.5max. _ Unit : m m 4.7max. 2.1max, i 2.2max. i 1.1±0.1 Absolute M axim um Ratings (T c = 2 5 °C ) Item Collector-base voltage


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PDF 2SB1373 2SD2066 0Dlb310 2SB13 2SD2066 2SB1373
2SB1373

Abstract: 2SD2066 S1113
Text: Power Transistors 2SB1373 2SB1373 Silicon PNP Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SD2066 ■Features • Very good linearity of DC current gain (Iife) • Wide area of safety operation (ASO) • High transition frequency (f-r) • Optimum for hi-fi audio amplifier output ■Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage Vcbo -160 V Collector-emitter voltage Vceo -160 V Emitter-base voltage Vebo -5 V Peak


OCR Scan
PDF 2SB1373 2SD2066 Q01b31Q 2SB1373 2SD2066 S1113
2SB1370

Abstract: 2SB1376 2sd2083 2SB1375 2SB1373 2SB1372 2SB1371 2SB1369 2SD2012 2SB1382
Text: -3Fa) BCE 2SB1372 15* -5 -0.5 400* 2SD2066 (T0P-3a) BCE 2SB1373 9* -5 -0.5 50* 2SD2012


OCR Scan
PDF 2SB1369 2SB1370 2SB1371 2SB1372 2SB1373 2SB1375 2SB1376 61393A 09K/0. 2SD2099 2SB1370 2sd2083 2SB1375 2SD2012 2SB1382
1999 - 2SB1373

Abstract: 2SD2066
Text: Power Transistors 2SB1373 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2066 Unit: mm 15.0±0.5 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 3.2±0.1 3.5 q 19.0±0.3 q 16.2±0.5 q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier 12.5 q 4.5±0.2 13.0±0.5


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PDF 2SB1373 2SD2066 2SB1373 2SD2066
1999 - 2SB1373

Abstract: 2SD2066
Text: Power Transistors 2SB1373 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2066 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 3.2±0.1 3.5 q 19.0±0.3 q 16.2±0.5 q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi


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PDF 2SB1373 2SD2066 2SB1373 2SD2066
1999 - Not Available

Abstract: No abstract text available
Text: Power Transistors 2SB1373 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2066 4.0±0.1 Unit: mm M Di ain sc te on na tin nc ue e/ d 4.0±0.1 13.0±0.5 s Features q q q q 15.0±0.5 10.5±0.5 4.5±0.2 2.0±0.1 Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25°C) ­160 ­160 ­5


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PDF 2SB1373 2SD2066
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