The Datasheet Archive

2SD2018 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
2SD2018 2SD2018 ECAD Model Panasonic Silicon NPN epitaxial planar type darlington Original PDF
2SD2018 2SD2018 ECAD Model Panasonic Silicon NPN epitaxial planar type Original PDF
2SD2018 2SD2018 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD2018 2SD2018 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD2018 2SD2018 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SD2018 2SD2018 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD2018 2SD2018 ECAD Model Panasonic Silicon NPN Epitaxial Planar Darlington Type Power Transistors Scan PDF

2SD2018 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
A 928A

Abstract: 2SD2018 diode ZENER 927 928A 100J
Text: Power Transistors 2SD2018 2SD2018 Silicon NPN Epitaxial Planar Darlington Type AF Amplifier ■Features • High fe • 60V Zener diode built-in between C and B • Darlington connection Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Collector-base voltage Vcbq Kfl + 25 b0_10 V Collector-emitter voltage Vceo fin+ 25 V Emitter-base voltage Vebo 5 V Peak collector current I CP 1.5 A , Respective Manufacturer Power Transistors 2SD2018 Pc-Ta Ic — VcE (l)With a 1(10 x 100 x 2mm Al heat


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PDF 2SD2018 A 928A 2SD2018 diode ZENER 927 928A 100J
Not Available

Abstract: No abstract text available
Text: Power Transistors 2SD2018 2SD2018 Silicon NPN Epitaxial Planar Darlington Type Package Dim ensions AF Am plifier ■Features • High fe • 6 0 V Z e n e r diode built-in b e tw e e n C and B • D arling ton co n n ectio n Absolute M axim um Ratings ( T a = 25 °C) Item Symbol Value Unit C ollector-base voltage VcBO 60 Í ? ? V Collector-em itter voltage VcEO 6 0 Í io V Em itter-base voltage V ebo 5 V Peak collector current


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PDF 2SD2018 200MHz bT3Efl52
2003 - 2SD2018

Abstract: No abstract text available
Text: Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 ­0.1 Features 3.2±0.2 Parameter Symbol Rating Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO 60 +25 -10 +25 60 -10 Emitter-base voltage (Collector open) Unit V 3.05±0.1 3.8±0.3 1.9±0.1 , . *: Pulse measurement Publication date: May 2003 SJD00239BED 1 2SD2018 PC Ta IC VCE VCE


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PDF 2SD2018 2SD2018
2002 - 2SD2018

Abstract: No abstract text available
Text: Power Transistors 2SD2018 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 ­0.1 For low-frequency amplification 3.2±0.2 1.9±0.1 3.05±0.1 · High forward current transfer ratio hFE · Built-in 60 V Zener diode between base to collector · Darlington connection 11.0±0.5 Features 16.0±1.0 3.8±0.3 3.16±0.1 Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector , Publication date: June 2002 SJD00239AED 1 2SD2018 PC Ta IC VCE VCE = 10 V TC = 25°C 2.0


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PDF 2SD2018 2SD2018
2003 - 2SD2018

Abstract: sick nt
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 ­0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2 Features Parameter Symbol 1.9±0.1 Rating Unit Peak collector current TC = 25°C Collector power dissipation 5 V 1 A , 2SD2018 PC Ta IC VCE VCE = 10 V TC = 25°C 2.0 4 3 (1) 2 90 µA 80 µA 1.6 60 µA


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PDF 2002/95/EC) 2SD2018 2SD2018 sick nt
2SD2037

Abstract: 2SD2001 2SD1993 2SD1995 2sd2033 2SD1989 2sd2022 2SD1991A 2SD1992A 2SD1994A
Text: 2SD2018 8TF LF A 60 60 1 1.2 5 1 25 6500 40000 10 1 1.8 2.2 1 0. 001 2SD2019 Hi LF PA 150 80 1.5 10 5 , * TO—126b ECB/Da 2SD2018 (TO—126) ECB. Da/R 2SD2019 T0-220 BCE/Da 2SD2022


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PDF 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD2017 2SD2018 2SD2037 2SD2001 2sd2033 2sd2022 2SD1991A
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 –0.1 ■Features 3.2±0.2 Symbol Collector-base voltage (Emitter open) VCEO Emitter-base voltage (Collector open) VEBO Collector current IC Peak collector current ICP TC = 25 , RoHS Directive (EU 2002/95/EC). 2SD2018 PC  Ta IC  VCE 2.0 4 3 90 µA 80 µA


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PDF 2002/95/EC) 2SD2018 O-126B-A1
2003 - HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON

Abstract: SICK 8.6 1/2W 2SD2018
Text: Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 ­0.1 Features 3.2±0.2 Parameter Symbol Rating Unit 60 +25 -10 +25 60 -10 V VEBO 5 V IC 1 A ICP 1.5 A PC 1.2 W Tj 150 °C Tstg -55 to +150 °C VCBO Collector-emitter voltage (Base open) VCEO , measurement Publication date: May 2003 SJD00239BED 1 2SD2018 PC Ta IC VCE 2.0 4 3


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PDF 2SD2018 O-126B-A1 HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON SICK 8.6 1/2W 2SD2018
2SD1555

Abstract: 2SB1833 2SD1876 2SD1878 2SD772 nec 2SD1546 ZSD15 2SD1548 2SD772 toshiba 2sd1407
Text: 2SD1747A 2SD1445 2SD1846 2SD1847 2SD856 ZSD1266 2SD1275 2SD1748 2SD2018 2SC3444 2SD1760 2SD1760 2SD1933


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PDF 2SD1883 1899-Z 2SD1544 2SD1545 2SD1546 2SD1547 2SD1548 2SD2293 2SD2295 2SD2298 2SD1555 2SB1833 2SD1876 2SD1878 2SD772 nec ZSD15 2SD1548 2SD772 toshiba 2sd1407
2SA1949

Abstract: 2SC5221 2SA1950 2C156 2SB1543 2SC2594 2SB1545 Complementary Darlington Audio Power Amplifier 2SD2412 2SD2404
Text: 100 2 <1.5 1.0 1 4000 -40000 1 2SD1645 2SD2051 60 ±10 1 <1.8 1.0 1 4000 -40000 1 2SD2018


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PDF O-126 O-202 T0-220 O-220F 2SC1398A A2SB1573 2SD2407 2SB1543 12SD2363 2SB1416 2SA1949 2SC5221 2SA1950 2C156 2SC2594 2SB1545 Complementary Darlington Audio Power Amplifier 2SD2412 2SD2404
Not Available

Abstract: No abstract text available
Text: -40000 1 2 <2.5 1 4 1000 -10000 1 200 2SD2326 1 100 2SD2018 1.0


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PDF O-126 O-202 T0-220 O-220F 2SC1398A 2SB1543 2SB1416 2SB1417 12SD2363 12SD2136
2SA1949

Abstract: 2SC5221 2SD2407 2SB1526 2SA1951 2SD2411 2SD2412 2SC1398 2sb1504 2SC5224
Text: <1.5 1.0 1 4000 -40000 1 2SD1645 2SD2051 60 ±10 1 <1.8 1.0 1 4000 -40000 1 2SD2018 2SD2326


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PDF O-126 O-202 T0-220 O-220F 2SC1398A A2SB1573 2SD2407 f2SB1543 12SD2363 2SB1416 2SA1949 2SC5221 2SD2407 2SB1526 2SA1951 2SD2411 2SD2412 2SC1398 2sb1504 2SC5224
MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: - - - - - - - 2SD2018 - - - - - - 2SD1991A 2SD1992A 2SD1994A - - - - 2SD1991A 2SD1992A 2SD1993 2SD1995 2SD2018 - - - - - - - - - - - - - - 2SD2018 2SC5913 2SC5901 - - - - - 2SD2178 2SD2136 - - - - 2SD0602A


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PDF MN101C01C MN15224 MN101C01D MN15226 MN101C027 MN15261 MN101C03A MN101C38A MN15263 MN101C06D MN1873287 an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
an6512n

Abstract: mn1225 mn6520 MN1280 MN6130 MN1201A MN6147C MN12C201D MN12C261D MN3107
Text: 2SD2066 2SD2029 2SD1975 2SD1772/A 2SD 1776/A 2SD1819A 2SD2018 2SD1991A 2SD1991A 2SD1993 2SD1995 2SD2018 , 2SD1728 2SD2057 2SD1727 2SD814A 2SD2064 2SD2065 2SD2052 2SC2631 2SC1847 2SD2018 2SD2178 2SD2136 2SJ163


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PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 mn6520 MN1280 MN6130 MN6147C MN12C201D MN12C261D MN3107
2SC5224

Abstract: 2SA1949 2SB1573 2SD2407 2SB0774 A1534A 2SA1951 T0-92N 2SB946 2SA1035
Text: 2SD1645 2SD2018 A 2SB1576 A 2SD2410 A 2SD2411 A 2SD2479 80 150 2SD2220 (80 V) 30/60/ 100 80 f


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PDF O-126 O-202 T0-220 2SC1398A 2SB1573 2SD2407 O-220F T0220F T0220 2SC5224 2SA1949 2SD2407 2SB0774 A1534A 2SA1951 T0-92N 2SB946 2SA1035
D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor 2sD2504 transistor D2052 transistor transistor b1154 D1244
Text: *2SC1568 I 2SC1846 »2SD1645 ®2 1 * 2SD2018 ( S f 1 i 2SA1096 I 2SC2497 1.5 C»2SA886 I »2SC1847


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PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor 2sD2504 transistor D2052 transistor transistor b1154 D1244
D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: *2SD946( ) ' 2SA885 . 2SC1846 2SD946A© *2SD946B@ 2SÜI645 2SD2018 '' ; 2SA1096 i 2SC2497 i »2SA1096A I


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PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE 2SC3939 C3795 2SB1526
Text: © *2S D1645@ " * 2SD2018 © " ( 2SA1096 1.5 - '2SA886 1*2SC1847 1 *2SA963 S'. 1 »2SC2209 * I


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PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE 2SC3939 C3795 2SB1526
TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: No file text available


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PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: No file text available


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PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: No file text available


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PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: No file text available


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PDF
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
lm3240

Abstract: smd transistor 6c5 EMP11 RSQ035P03 HTRM800 CY62148E BAS70WT ABB inverter motor fault code inverter ABB ACS 300 abb inverter manual acs 800
Text: No file text available


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PDF P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U P468-ND LNG995PF8W AT-DE071) lm3240 smd transistor 6c5 EMP11 RSQ035P03 HTRM800 CY62148E BAS70WT ABB inverter motor fault code inverter ABB ACS 300 abb inverter manual acs 800
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