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2SD2012 Bipolar (BJT) Single Transistor, NPN, 60 V, 3 MHz, 25 W, 3 A, 20 RoHS Compliant: Yes 2SD2012 ECAD Model
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Newark element14 2SD2012 Bulk 0 1 - - - - - More Info
ISC
2SD2012 TO-220F 2SD2012 ECAD Model
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Karl Kruse GmbH & Co KG 2SD2012 5,000 - - - - - More Info

2SD2012 datasheet (15)

Part ECAD Model Manufacturer Description Type PDF
2SD2012 2SD2012 ECAD Model STMicroelectronics TRANS GP BJT NPN 60V 3A 3TO-220F Original PDF
2SD2012 2SD2012 ECAD Model Toshiba Audio Frequency Power Amplifier Original PDF
2SD2012 2SD2012 ECAD Model Toshiba Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Transistor for AC-DC converter; Application Scope: switching regulator; Part Number: 2SB1375 Original PDF
2SD2012 2SD2012 ECAD Model Various Russian Datasheets Transistor Original PDF
2SD2012 2SD2012 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2SD2012 2SD2012 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SD2012 2SD2012 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SD2012 2SD2012 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
2SD2012 2SD2012 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD2012 2SD2012 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SD2012 2SD2012 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD2012 2SD2012 ECAD Model Toshiba Silicon NPN transistor for audio frequency power amplifier applications Scan PDF
2SD2012 2SD2012 ECAD Model Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF
2SD2012 2SD2012 ECAD Model Toshiba NPN Transistor Scan PDF
2SD2012(F,M) 2SD2012(F,M) ECAD Model Toshiba 2SD2012 - TRANSISTOR NPN 60V 3A TO-220 Original PDF

2SD2012 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 2SD2012

Abstract: 2sd2012 transistor transistor 2SD2012
Text: 2SD2012 ® NPN SILICON POWER TRANSISTOR s s s HIGH DC CURRENT GAIN LOW SATURATION , PURPOSE SWITCHING s DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO , C C 1/5 2SD2012 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o , 2SD2012 DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage 3/5 2SD2012 TO-220F MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A


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PDF 2SD2012 2SD2012 O-220F O-220F 2sd2012 transistor transistor 2SD2012
Not Available

Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 Unit in 1Q3IIAX AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. . High DC Current Gain . Low Saturation Voltage : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C) . Collector Metal (Fin) is Covered with Mold Resin (New TO-220 (IS , 100 320 1.0 1.0 UNIT UA t f A V V V MHz pF 1033 2SD2012 le ~ VCE Ic (a ) hpE - ÏC , 2SD2012 rth " TRANSIENT THERMAL RESISTANCE rt h (T/W) @ Ta=25*C 100 WITHOUT HEAT-SINK 'Tc = 25


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PDF 2SD2012 O-220
2003 - 2sd2012

Abstract: No abstract text available
Text: 2SD2012 ® NPN SILICON POWER TRANSISTOR I I I HIGH DC CURRENT GAIN LOW SATURATION , PURPOSE SWITCHING I DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO , 150 o C 1/5 2SD2012 THERMAL DATA R thj-case Thermal Resistance Junction-case Max , Curve 2SD2012 DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage 3/5 2SD2012 TO-220F MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP


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PDF 2SD2012 2SD2012 O-220F O-220F
D2012

Abstract: br d2012 2SD2012
Text: 2SD2012 NPN 2SD2012 : mm · · : PC = 25 W (Tc = 25°C) · : VCE , : 2-10R1A (//) (/ : 1.7 g () ) () () 1 2007-06-07 2SD2012 (Ta = 25 , D2012 () No. (: : ) 2 2007-06-07 2SD2012 IC ­ VCE hFE ­ IC 1000 3.0 , 2SD2012 rth (°C/W) rth ­ tw 100 (1) (2) 50 30 (1) 10 5 3 (2) 1 0.5 0.3 0.1 10-3 10-2 10-1 1 10 102 tw (s) 4 2007-06-07 2SD2012


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PDF 2SD2012 2-10R1A 20070701-JA D2012 br d2012 2SD2012
mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: 2SC2349 2SC489 2SD526, 2SD880, 2SD1408, 2SD2012 2SC370 (G) 2SC1815 2SC386 2SC2349 2SC490 2SD526, 2SD880, 2SD1408, 2SD2012 2SC370K 2SC1815 2SC386A 2SC2349 2SC491 2SD526, 2SD880, 2SD1408, 2SD2012 2SC371 2SC1815 2SC387 2SC2347 2SC492 2SD526, 2SD880, 2SD1408, 2SD2012 2SC371 (G) 2SC1815 2SC387A 2SC2347 2SC493 2SD526, 2SD880, 2SD1408, 2SD2012 2SC372 (G) 2SC1815 2SC387A (G) 2SC2347 2SC494 2SD526, 2SD880, 2SD1408, 2SD2012


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PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
2004 - Not Available

Abstract: No abstract text available
Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE (1) = 100 (min) • Low saturation voltage , lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-07 2SD2012 IC – VCE 3.0 , ) 2004-07-07 2SD2012 rth – tw 100 (2) Infinite heat sink Tc = 25°C 30 Transient thermal , 75 100 Ambient temperature 3 125 Ta 150 175 (°C) 2004-07-07 2SD2012


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PDF 2SD2012
2003 - br d2012

Abstract: D2012 2SD2012
Text: 2SD2012 NPN 2SD2012 : mm · · : PC = 25 W (Tc = 25°C) : VCE (sat) = , : (//) 2-10R1A (/ ) : 1.7 g () ( ) () 1 2009-12-01 2SD2012 (Ta = 25 , ]] RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-12-01 2SD2012 IC ­ VCE hFE , VCE (V) 2009-12-01 2SD2012 rth ­ tw 100 rth (°C/W) 50 30 (1) (2 , ) 2009-12-01 2SD2012 · · · · "" · · ·


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PDF 2SD2012 2-10R1A br d2012 D2012 2SD2012
2007 - transistor d2012

Abstract: d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012
Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power , 2006-11-21 2SD2012 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition , (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD2012 IC ­ VCE 3.0 100 , ) 2006-11-21 2SD2012 rth ­ tw 100 (2) Infinite heat sink Tc = 25°C 30 Transient thermal , 100 125 150 175 Ambient temperature Ta (°C) 4 2006-11-21 2SD2012 RESTRICTIONS


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PDF 2SD2012 transistor d2012 d2012 transistor D2012 toshiba d2012 AMPLIFIER br d2012 2SD2012 D2012
2004 - transistor d2012

Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications · High DC current gain: hFE (1) = 100 (min) · Low saturation voltage: VCE , )-free package or lead (Pb)-free finish. 1 2004-07-26 2SD2012 IC ­ VCE 3.0 100 80 , ) 2004-07-26 2SD2012 rth ­ tw 100 (2) Infinite heat sink Tc = 25°C 30 Transient thermal , 75 100 Ambient temperature 3 125 Ta 150 175 (°C) 2004-07-26 2SD2012


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PDF 2SD2012 transistor d2012 d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
2SD2012

Abstract: No abstract text available
Text: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm • High DC Current Gain : hFE (1) = 100 (Min.) • Low , 1 MHz — 35 — pF 1 2001-11-05 TOSHIBA 2SD2012 IC - VCE hfe - ic 3.0 2.5 2.0 1.5 1.0 , 100 300 COLLECTOR-EMITTER VOLTAGE VQE (V) 2 2001-11-05 TOSHIBA 2SD2012 3 2001-11-05 TOSHIBA 2SD2012 RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA is continually working to improve the quality


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PDF 2SD2012 54truments, 2SD2012
2006 - D2012 toshiba

Abstract: transistor d2012 d2012 transistor br d2012 transistor 2SD2012
Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power , report and estimated failure rate, etc). 1 2006-11-21 2SD2012 Electrical Characteristics (Tc = , )-free finish. 2 2006-11-21 2SD2012 IC ­ VCE 3.0 90 100 80 70 60 1000 500 Tc = 100°C hFE , (V) 3 2006-11-21 2SD2012 rth ­ tw 100 50 (1) No heat sink Ta = 25°C (2) Infinite heat , Ta (°C) 4 2006-11-21 2SD2012 RESTRICTIONS ON PRODUCT USE · The information contained


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PDF 2SD2012 2-10R1A D2012 toshiba transistor d2012 d2012 transistor br d2012 transistor 2SD2012
2sd2012 transistor

Abstract: 2sd2012 2SB1375
Text: TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features · High DC Current Gain : 100 (Min.) · Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) · High Power Dissipation - PC = 25W (Tc = 25°C) · Collector Metal (Fin) is Covered with Mold Resin · Complementary to 2SB1375 Absolute , Capacitance TOSHIBA CORPORATION 1/2 2SD2012 The information contained here is subject to change


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PDF 2SD2012 2SB1375 2sd2012 transistor 2sd2012 2SB1375
2002 - 2SD2012

Abstract: No abstract text available
Text: MCC Features · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) NPN Silicon Power Transistors Rating 60 60 7.0 3.0 0.5 2.0 25 -55 to +150 , 2.50 2.90 .102 2.60 .024 .035 0.60 0.90 NOTE www.mccsemi.com Revision: 2 2003/07/09 2SD2012 MCC www.mccsemi.com Revision: 2 2003/07/09 2SD2012 MCC www.mccsemi.com Revision: 2 2003


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PDF 2SD2012 O-220F 2SD2012
Not Available

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA TRANSISTOR 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS 2SD2012 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 0 1 0.3 ^ 3.2 ± 0.2 2.710.2 · · · High DC Current Gain : hpE(l) = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P , VOLTAGE Vqe (V) DC CURRENT GAIN hpE COLLECTOR CURRENT Ic (A) VCE(sat) - Ic 2SD2012 TO SHIBA 2SD2012 r th - tw 1997 02-03 3/3 -


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PDF 2SD2012
transistor 2sd2012

Abstract: 2sd2012
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS 2SD2012 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm r · · · High DC Current Gain : hpE (1) - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C) RATING 60 60 7 3 0.5 2.0 25 150 -5 5 -1 5 0 10 ±0.3 0 o ^3.2 ± 0.2 CO 2.7±Q 2 cn ro 1.1 , 2SD2012 TO SH IBA 2SD2012 rth - tw 3 2 00 1 - 08-23 TO SH IBA 2SD2012


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PDF 2SD2012 transistor 2sd2012 2sd2012
2sb1366

Abstract: 2SD2012
Text: SavantIC Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·Audio frequency power amplifier and general purpose , SavantIC Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors , .2 Outline dimensions 3 2SD2012 -


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PDF 2SD2012 O-220F 2SB1366 O-220F) 2sb1366 2SD2012
2sd2012

Abstract: 2SB1366 2SB136
Text: Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25) APPLICATIONS ·Audio frequency power amplifier and general purpose , ~150 Inchange Semiconductor Product Specification 2SD2012 Silicon NPN Power , Semiconductor Product Specification 2SD2012 Silicon NPN Power Transistors PACKAGE OUTLINE Fig


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PDF 2SD2012 O-220F 2SB1366 O-220F) 2sd2012 2SB1366 2SB136
2009 - transistor d2012

Abstract: d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba
Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power , report and estimated failure rate, etc). 1 2009-12-01 2SD2012 Electrical Characteristics (Ta , electronic equipment. 2 2009-12-01 2SD2012 IC ­ VCE 3.0 100 80 70 90 Collector , 2SD2012 rth ­ tw 100 Curves apply only to limited areas of thermal Transient thermal resistance , 4 tw 10 100 (s) 2009-12-01 2SD2012 RESTRICTIONS ON PRODUCT USE · Toshiba


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PDF 2SD2012 transistor d2012 d2012 transistor d2012 AMPLIFIER BR D2012 2SD2012 D2012 D2012 toshiba
2002 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features · · · · High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) Lead Free Finish/RoHS Compliant (Note1 , Revision: B 1 of 4 2011/06/01 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Revision: B 2 of 4 2011/06/01 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com


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PDF 2SD2012
2002 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features · · · · High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) Lead Free Finish/RoHS Compliant (Note1) ("P" , 2011/01/01 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Revision: A 2 of 4 2011/01/01 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Revision


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PDF 2SD2012
2SD2012

Abstract: 2sd2012 transistor
Text: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm • High DC Current Gain : hFE(1) = 100 (Min.) • Low Saturation Voltage : VcEisat^i-OV (Max.) • High Power Dissipation : Pç; = 25W (Tc = 25°C) MAXIMUM , /3 TOSHIBA 2SD2012 IC - VCE hFE - IC 3.0 2.5 2.0 1.5 1.0 0.5 _ IC c 0- —k 80 , 5 10 30 50 100 300 COLLECTOR-EMITTER VOLTAGE VQE (V) 1997-02-03 2/3 TOSHIBA 2SD2012 1997-02-03


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PDF 2SD2012 2SD2012 2sd2012 transistor
2002 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features · · · · High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) Case Material: Molded Plastic , www.mccsemi.com Revision: 3 1 of 4 2006/05/18 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Revision: 3 2 of 4 2006/05/18 2SD2012 MCC TM Micro Commercial Components


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PDF 2SD2012 O-220F
2002 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features · · · · High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) Lead Free Finish/RoHS Compliant(Note 1 , Revision: 4 1 of 4 2008/01/01 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com Revision: 4 2 of 4 2008/01/01 2SD2012 MCC TM Micro Commercial Components www.mccsemi.com


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PDF 2SD2012
2SD2Q12

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS 2SD2Q12 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm 10 + 0.3 , $ 3.2 ± 0.2 2.7 ± 0 2 High DC C urrent Gain : IrpE (1) = 100 (Min.) Low Saturation Voltage V n T w _ _ i.\ = 1 O V Í M a Y Í' ' Vy.ci ( .» a t , 1/3 TOSHIBA 2SD2012 IC - VCE hFE - IC COLLECTOR-EMITTER VOLTAGE Vq e , TOSHIBA 2SD2012 rth - tw PULSE WIDTH tw (s) 1997 02-03 - 3/3


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PDF 2SD2012 2SD2Q12 2SD2Q12
2003 - TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: No file text available


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PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
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