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2SD1994A-R(TA) 2SD1994A-R(TA) ECAD Model
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2SD1994A datasheet (11)

Part ECAD Model Manufacturer Description Type PDF
2SD1994A 2SD1994A ECAD Model Panasonic NPN Transistor Original PDF
2SD1994A 2SD1994A ECAD Model Panasonic Silicon NPN epitaxial planer type Original PDF
2SD1994A 2SD1994A ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD1994A 2SD1994A ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD1994AQ 2SD1994AQ ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1994AR 2SD1994AR ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1994AR 2SD1994AR ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1994ARA 2SD1994ARA ECAD Model Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN LF AMP 50VCEO MT-2 Original PDF
2SD1994AS 2SD1994AS ECAD Model Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
2SD1994AS 2SD1994AS ECAD Model Various Russian Datasheets Transistor Original PDF
2SD1994ASA 2SD1994ASA ECAD Model Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN LF AMP 50VCEO MT-2 Original PDF

2SD1994A Datasheets Context Search

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2SD1994A

Abstract: No abstract text available
Text: 2SD1994A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES TO-92 Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping G H 1Emitter 2Collector 3Base J A , specification will not be informed individually. Page 1 of 3 2SD1994A Elektronische Bauelemente NPN , . B Any changes of specification will not be informed individually. Page 2 of 3 2SD1994A


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PDF 2SD1994A 01-December-2008 2SD1994A
2004 - Not Available

Abstract: No abstract text available
Text: 2SD1994A NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 3.5 ±0.2 4.55±0.2 , changing of specification will not be informed individual Page 1 of 3 2SD1994A NPN Transistor , Plastic-Encapsulate Transistor 2SD1994A Any changing of specification will not be informed individual Page 2 of 3 2SD1994A NPN Transistor Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01


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PDF 2SD1994A 01-Jun-2002 200MHz
1998 - 2SD1994A

Abstract: 2SB1322A 2SD1994
Text: Transistor 2SD1994A Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SB1322A Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 q Low collector to emitter saturation , S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SD1994A PC - Ta IC - , resistance RBE (k) Transistor 2SD1994A ICEO - Ta 104 Area of safe operation (ASO) 10 VCE


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PDF 2SD1994A 2SB1322A 2SB1322A. 2SD1994A 2SB1322A 2SD1994
2SD1994

Abstract: 2SB1322 2SB1322A 2SD1994A
Text:  Panasonic 2SB1322, 2SB1322A v □ > PNP Ib^^y TJU7°U —fM «a»«*)«* 2SD1994, 2SD1994A t =1 >7° ■« ft • 2SD1994, 2SD1994A "/'J ^ > & V.-^T, (Ta=25°C) *7'J > h*« : 3 Pi' i'Sßiä-OÜlÄffi« lcniJil.±)f^l.7mm I «ftWWtt (Ta=25t)' Item Symbol Value Unit ^-XfE 2SB1322 Vcbo -30 V 2SB1322A -60 5 9 • ? * vttE 2SB1322 VcEO -25 V ■2SB1322A -50 Vebo - 5 V Icp -1.5 A lC - 1 A n U ^ ^ ii^ Pc* 1 W Tj 150 °c «sat Tstg -55- + 150 °c 6.9±0.1 Unit ! mm 1.05


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PDF 2SB1322, 2SB1322A 2SD1994, 2SD1994A 2SB1322 2SD1994 2SB1322A
2003 - 2SB1322A

Abstract: 2SD1994A
Text: Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Features · Low collector-emitter saturation voltage VCE(sat) · Allowing supply with the radial taping (0.5) (1.0) (0.2 , 2SD1994A PC Ta IC VCE 0.6 0.4 8 mA 7 mA 1.00 6 mA 5 mA 0.75 4 mA 3 mA 0.50 , 40 20 0 0.1 1 10 100 Base-emitter resistance RBE (k) 2SD1994A ICEO Ta 104


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PDF 2SD1994A 2SB1322A 2SB1322A 2SD1994A
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A 0.7 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 Features · Low , /EC). 2SD1994A PC Ta 1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in , This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1994A ICEO Ta 104 VCE = 10 V 10


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PDF 2002/95/EC) 2SD1994A 2SB1322A
2000 - 2SD1994A

Abstract: 2SB1322A
Text: Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 2.5±0.5 3 2.5±0.1 2 +0.1 2.5±0.5 1 0.45-0.05 0.45-0.05 I Absolute Maximum Ratings Ta = 25°C Parameter 1.0 1.0 I , no indication for rank. 1 2SD1994A Transistors PC Ta Ta = 25°C 1.25 0.8 0.6 , Base to emitter resistance RBE (k) Transistors 2SD1994A ICEO Ta 104 Area of safe


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PDF 2SD1994A 2SB1322A 2SD1994A 2SB1322A
2SB1322A

Abstract: 2SD1994A
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou Fo an po du , RoHS Directive (EU 2002/95/EC). 2SD1994A PC Ta IC VCE Ta = 25°C Collector current IC (A , RoHS Directive (EU 2002/95/EC). 2SD1994A 104 ICEO Ta VCE = 10 V 0 40 80 120


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PDF 2002/95/EC) 2SD1994A 2SB1322A 2SB1322A 2SD1994A
2003 - 2SD1994A

Abstract: 2SB1322A
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 · Low collector-emitter , product complies with the RoHS Directive (EU 2002/95/EC). 2SD1994A PC Ta IC VCE 0.6 0.4 , /EC). 2SD1994A ICEO Ta 104 Safe operation area 10 VCE = 10 V Single pulse Ta = 25


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PDF 2002/95/EC) 2SD1994A 2SB1322A 2SD1994A 2SB1322A
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A Unit: mm 2.5±0.1 (0.8) ■Features • Low collector-emitter saturation voltage VCE(sat) â , 2003 SJC00237BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1994A , (EU 2002/95/EC). 2SD1994A ICEO  Ta VCE = 10 V 10 Safe operation area 1 Single


Original
PDF 2002/95/EC) 2SD1994A 2SB1322A
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1994A Silicon NPN epitaxial planar type For low-frequency power strengthening and drive Complementary to 2SB1322A 0.7 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 Features · Low , /EC). 2SD1994A PC Ta 1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in , This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1994A ICEO Ta 104 VCE = 10 V 10


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PDF 2002/95/EC) 2SD1994A 2SB1322A
2010 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1994A TRANSISTOR (NPN) 1. EMITTER FEATURES Low Collector to Emitter Saturation Voltage Complementary Pair with 2SB1322A Allowing Supply with the Radial Taping 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V Emitter-Base Voltage 5


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PDF 2SD1994A 2SB1322A 200MHz
2000 - 2SB1322A

Abstract: 2SD1994A
Text: Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 2.5±0.5 3 2.5±0.1 2 +0.1 2.5±0.5 1 0.45-0.05 0.45-0.05 I Absolute Maximum Ratings Ta = 25°C Parameter 1.0 1.0 I , no indication for rank. 1 2SD1994A Transistors PC Ta Ta = 25°C 1.25 0.8 0.6 , Base to emitter resistance RBE (k) Transistors 2SD1994A ICEO Ta 104 Area of safe


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PDF 2SD1994A 2SB1322A 2SB1322A 2SD1994A
2SD2037

Abstract: 2SD2001 2SD1993 2SD1995 2sd2033 2SD1989 2sd2022 2SD1991A 2SD1992A 2SD1994A
Text: A 55 55 0.1 0.4 0.1 20 210 650 10 0. 002 1 0.1 0.01 2SD1994A ftT LF PA/ D 60 50 1 1 0.1 20 85 , =100K (HM) ECB 2SD1993 200* 10 -0.05 20 2SB1322A (MT-2) ECB 2SD1994A 200* 10 -0. 002 NV Typ


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PDF 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD2017 2SD2018 2SD2037 2SD2001 2sd2033 2sd2022 2SD1991A
2sD1555

Abstract: 2SD4391 2SM583 2SD1554 2SD1483 2SD1994A 2SD1383K SD1862 2SD1164 2SC2532
Text: 2SD1930 O - A i ^ - A - A - A - A -A -A 2SD1315 2SD2184 2SD1994A 2SC3243 2SD400


OCR Scan
PDF 2SD1850 2SD1851 2SD1852 2SD1886 2SC2532 2SD1478 2SD892 2SD1698 2SD1697 2SD893 2sD1555 2SD4391 2SM583 2SD1554 2SD1483 2SD1994A 2SD1383K SD1862 2SD1164 2SC2532
2SD2458

Abstract: 2SD2434 2SD2436 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 HOA1404-2 2SA1310
Text: 12SC3940/A (2SA683/684 1,2 SC1383/1384 f 2SB766/A 12SD874/A f 2SB1322A { 2SD1994A 25/50 1A • 85 -340


OCR Scan
PDF O-92NL 2SB1462 2SD2216 2SB1218A I2SD1819A 2SB709A 2SD601A 2SB1627 I2SD2496 2SA1309A 2SD2458 2SD2434 2SD2436 2SB1600 2SB642 2SD2433 2SD1010 HOA1404-2 2SA1310
2sc4496a

Abstract: 2SD3181 2sc3928 2Sc3246 4468 2SD1404 2SC3209 2SC2644 2SD773 2sc3514
Text: 2SD2177 2SD1864 2SC 4485 2SC3668 2SC3733 2SD1994A 2SC3243 2SD1863 2SC 4486 JZ- ¥ 2SC3668 2SD1779


OCR Scan
PDF 2SC4403 2SC4187 2SC4854 2SC2644 2SD1047 2SC3182N 2SC2989 2SC4278 2SC3307 2SC3508 2sc4496a 2SD3181 2sc3928 2Sc3246 4468 2SD1404 2SC3209 2SC2644 2SD773 2sc3514
2SB1335A

Abstract: 2SB1333 2SD2021 2SB1320A 2SB1365 2SB1353 2sb1355 2SB1364 2sb1357 2SB1359
Text: 2SD1992A (MT-1) ECB 2SB1321A 200* -10 0.05 30 2SD1994A (MT-2) ECB 2SB1322A 100* -2 -0.5 55* RI


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PDF 2SB1320A 2SB1321A 2SB132ZA 2SB1323 2SB1324 2SB1325 2SB1326 2SD2027 O-220ABÂ 2SB1346 2SB1335A 2SB1333 2SD2021 2SB1365 2SB1353 2sb1355 2SB1364 2sb1357 2SB1359
2SD2436

Abstract: 2SD2434 2SD2433 D49 transistor 2SC3312 2SD2529 2SD2458 2S897 2sb1446 2SD1995
Text: /A ( 2SA1534/A 12SC3940/A Î2SA683/684 l2SC1383/1384 f 2SB766/A 12SD874/A f2SB1322A ( 2SD1994A 25/50


OCR Scan
PDF O-92NL 2SB1462 I2SD2216 f2SB1218A I2SD1819A 2SB709A 12SD601A f2SB1627 I2SD2496 C2SA1309A 2SD2436 2SD2434 2SD2433 D49 transistor 2SC3312 2SD2529 2SD2458 2S897 2sb1446 2SD1995
2SB1446

Abstract: 2SB642 2SD2458 2SD1995 2SD1993 2SD1010 2sc5335 2sb788 2SC2632 2SD1512
Text: * 150 *500 *2 ( 2SB1322A I 2SD1994A >2SD2455 i 2SA1791 i 2SC4656 ' 2SA1748 i 2SC4562 ; .


OCR Scan
PDF 2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SB642 2SD2458 2SD1995 2SD1993 2SD1010 2sc5335 2sb788 2SC2632 2SD1512
1998 - 2sb1322

Abstract: No abstract text available
Text: Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45­0.05 0.7 4.0 s Features q 0.65 max. 1.0 1.0 0.2 Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage


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PDF 2SB1322A 2SD1994A 2sb1322
2000 - 2SB1322A

Abstract: 2SD1994A
Text: taping (1.45) 0.5 4.5±0.1 For low-frequency power amplification Complementary to 2SD1994A


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PDF 2SB1322A 2SB1322A 2SD1994A
2003 - 2SB1322A

Abstract: 2SD1994A
Text: Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Features · Allowing supply with the radial taping (0.5) (1.0) (0.2) 4.5±0.1 0.7 14.5±0.5 (1.0) 0.65 max. Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -60 V Collector-emitter voltage (Base open) VCEO -50 V Emitter-base voltage


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PDF 2SB1322A 2SD1994A 2SB1322A 2SD1994A
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Features · Allowing supply with the radial taping 0.65 max. (1.0) Unit: mm 0.7 6.9±0.1 4.0 (1.0) (0.2) 4.5±0.1 2.5±0.1 (0.8) (0.5) Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector


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PDF 2002/95/EC) 2SB1322A 2SD1994A
2003 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Features · Allowing supply with the radial taping 0.65 max. (1.0) Unit: mm 0.7 6.9±0.1 4.0 (1.0) (0.2) 4.5±0.1 2.5±0.1 (0.8) (0.5) Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector


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PDF 2002/95/EC) 2SB1322A 2SD1994A
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